UT100N03L-TF3-T [UTC]

Power Field-Effect Transistor;


型号：	UT100N03L-TF3-T
厂家：	Unisonic Technologies
描述：	Power Field-Effect Transistor
文件：	总8页 (文件大小：364K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UT100N03

Power MOSFET

100A, 30V N-CHANNEL

POWER MOSFET



DESCRIPTION

TO-220

TO-251

TO-220F

The UT100N03 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation with

low gate voltages. This device is suitable for use as a load

switch or in PWM applications.

TO-252



FEATURES

* R_DS(ON)< 5.3mΩ@V_GS=10 V, I_D=50 A

* R_DS(ON)< 8.0mΩ@V_GS=4.5 V, I_D=40 A

DFN-8(5x6)

TO-263



SYMBOL

Drain

Gate

Source

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-220

Packing

Lead Free

Halogen Free

UT100N03L-TA3-T

UT100N03L-TF3-T

UT100N03L-TM3-T

UT100N03L-TN3-R

UT100N03L-TND-R

UT100N03L-TQ2-T

UT100N03L-TQ2-R

UT100N03G-TA3-T

UT100N03G-TF3-T

UT100N03G-TM3-T

UT100N03G-TN3-R

UT100N03G-TND-R

UT100N03G-TQ2-T

UT100N03G-TQ2-R

G D

Tube

TO-220F G D

TO-251

TO-252

G D

Tube

Tape Reel

Tube

TO-252D G D

TO-263

G D

Tape Reel

UT100N03G-K08-5060-R DFN-8(5×6) S

S S G D D D D Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source

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UT100N03

Power MOSFET



MARKING

TO-251 / TO-252 / TO-252D / TO-263

DFN-8(5×6)

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UT100N03

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

100

400

Continuous Drain Current

Pulsed Drain Current (Note 2)

I_DM

Single Pulsed Avalanche Current (Note 3)

Single Pulsed Avalanche Energy (Note 3)

I_AS

E_AS

875

100

TO-220/TO-263

TO-220F

Power Dissipation

P_D

TO-251/TO-252

TO-252D

DFN-8(5×6)

Junction Temperature

Strong Temperature

T_J

+175

°С

T_STG

-55 ~ +175

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature

3. L = 0.5mH, I_AS= 35A, V_DD= 25V, R_G= 25Ω, Starting T_J= 25°С.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

TO-220/TO-220F

TO-263

Junction to Ambient

Junction to Case

θ_JA

°С/W

TO-251/TO-252

TO-252D

110

DFN-8(5×6)

TO-220/TO-263

TO-220F

40.3 (Note 1, 2)

1.5

3.47

θ_JC

°С/W

TO-251/TO-252

TO-252D

DFN-8(5×6)

6 (Note 1, 2)

Notes: 1. Maximum under Steady State conditions is 90 °C/W.

2. Surface Mounted on 1" x 1" FR4 board.

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UT100N03

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°С, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS(Note2)

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0 V, I_D=250 µA

V_DS=30 V,V_GS=0 V

µA

I_GSS

V_DS=0 V, V_GS= ±20 V

±100 nA

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250 µA

V_GS=10 V, I_D=50 A

3.05 5.3

Static Drain-Source On-Resistance

mΩ

V_GS=4.5 V, I_D=40 A

4.2

DYNAMIC PARAMETERS(Note3)

Input Capacitance

C_ISS

C_OSS

C_RSS

9500

800

V_DS=15V, V_GS=0V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS(Note3)

Total Gate Charge

300

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

20.8

V_DS=15V, V_GS=5V, I_D=16A

Gate Source Charge

Gate Drain Charge

Turn-ON Delay Time

25.7 50

10 20

128 200

Turn-ON Rise Time

V_DD=15V, I_D=1A, R_GEN=6ꢀ

V_GS=10 V

Turn-OFF Delay Time

Turn-OFF Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Drain-Source Diode Forward Current

V_SD

I_S

I_S=20 A,V_GS=0 V

1.5

Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.

2. Guaranteed by design, not subject to production testing.

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UT100N03

Power MOSFET



TEST CIRCUIT AND WAVEFORM

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UT100N03

Power MOSFET



TYPICAL CHARACTERISTICS

Output Characteristics

Transfer Characteristics

100

V_GS=10,8,6,4V

V_GS=3V

25℃

T_J=125℃

-55℃

Drain to Source Voltage,V_DS(V)

Gate to Source Voltage,V_GS(V)

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UT100N03

Power MOSFET



TYPICAL CHARACTERISTICS(Cont.)

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UT100N03

Power MOSFET



TYPICAL CHARACTERISTICS(Cont.)

Normalized Thermal Transient Impedanc Curve

10⁰

10^-1

10^-2

D=0.5

0.2

0.1

P_DM

t₁

0.05

0.02

t₂

1.R_θJC(t)=r(t)*R_θJC

0.01

2.R_θJC=See Datasheet

3.T_JM-T_C=P*R_θJC(t)

4.Duty Cycle,D=t₁/t₂

Single Pulse

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

Square Wave Pulse Duration (sec)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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