UT2316L-AE2-R [UTC]

Small Signal Field-Effect Transistor,;
UT2316L-AE2-R
型号: UT2316L-AE2-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Field-Effect Transistor,

文件: 总4页 (文件大小:196K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
UT2316  
Power MOSFET  
N-CHANNEL  
ENHANCEMENT MODE  
DESCRIPTION  
The UTC UT2316 is N-channel enhancement mode Power  
MOSFET, designed in serried ranks with fast switching  
speed, low on-resistance and favorable stabilization.  
Used in commercial and industrial surface mount  
applications and suited for low voltage applications such as  
DC/DC converters.  
SYMBOL  
3.Drain  
2.Gate  
1.Source  
ORDERING INFORMATION  
Ordering Number  
Lead Free  
Pin Assignment  
Package  
Packing  
3
D
D
Halogen Free  
1
G
G
2
S
S
UT2316L-AE2-R  
UT2316L-AE3-R  
UT2316G-AE2-R  
UT2316G-AE3-R  
SOT-23-3  
SOT-23  
Tape Reel  
Tape Reel  
Note: Pin Assignment: G: Gate  
S: Source  
D: Drain  
MARKING  
www.unisonic.com.tw  
Copyright © 2015 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R502-126.D  
UT2316  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDS  
VGS  
ID  
RATING  
30  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current (Note 3)  
Pulsed Drain Current (Note 1, 2)  
Total Power Dissipation (TA=25°C)  
Junction Temperature  
3.6  
A
IDM  
16  
A
PD  
0.96  
W
°C  
°C  
TJ  
+150  
-55 ~ +150  
Storage Temperature  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
RATINGS  
175  
UNIT  
°C/W  
Junction to Ambient (Note 3)  
θJA  
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
BVDSS  
IDSS  
VGS=0V, ID=250μA  
VDS=24V, VGS=0V  
VDS=0V, VGS=±20V  
30  
V
1
μA  
IGSS  
±100 nA  
Gate Threshold Voltage  
VGS(TH)  
ID(ON)  
VDS=VGS, ID=250μA  
0.8  
6
V
A
A
VDS = 4.5V, VGS = 10V  
On-State Drain Current  
V
DS = 4.5V, VGS = 4.5V  
VGS=10V, ID=3.4A  
GS=4.5V, ID=2.6A  
4
42  
68  
50  
85  
mΩ  
mΩ  
Drain-Source On-State Resistance (Note 2)  
RDS(ON)  
V
DYNAMIC CHARACTERISTICS  
Input Capacitance  
CISS  
COSS  
CRSS  
215  
90  
pF  
pF  
pF  
VDS=15V,VGS=0V, f=1.0MHz  
VDS=15V, VGS=10V, ID=3.6A  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Total Gate Charge  
55  
QG  
QGS  
QGD  
tD(ON)  
tR  
4.3  
0.65  
1.2  
9
7
nC  
nC  
nC  
ns  
ns  
ns  
ns  
Gate-Source Charge  
Gate-Drain Charge  
Turn-ON Delay Time  
15  
15  
20  
12  
VDD=15V, VGS=10V, ID1A,  
RG=6, RL=15Ω  
Turn-ON Rise Time  
9
Turn-OFF Delay Time  
Turn-OFF Fall Time  
tD(OFF)  
tF  
14  
6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage(Note2)  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS=0V, IS=0.8A  
0.88 1.2  
0.8  
V
A
IS  
VD=VG=0V, VS=1.2V  
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. Pulse width 300us, duty cycle 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R502-126.C  
www.unisonic.com.tw  
UT2316  
Power MOSFET  
TYPICAL CHARACTERISTICS  
Typical Output Characteristics  
VGS=10 thru 5V  
Transfer Characteristics  
16  
14  
16  
14  
12  
10  
8
12  
10  
8
4V  
6
6
TC=125℃  
25℃  
3V  
2V  
4
4
2
0
2
-55℃  
0
0
0
2
4
6
8
10  
1
2
3
4
5
Drain-to-Source Voltage, VDS (V)  
Gate-to-Source Voltage, VDS (V)  
On-Resistance vs. Drain Current  
Capacitance  
0.5  
0.4  
0.3  
350  
300  
250  
CISS  
200  
150  
100  
0.2  
0.1  
COSS  
VGS=4.5V  
CRSS  
50  
0
VGS=10V  
0.0  
8
12  
16  
0
2
4
6
10  
14  
5
20  
25  
30  
0
10  
15  
Drain-to-Current Voltage, VDS (V)  
Drain Current, ID (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R502-126.C  
www.unisonic.com.tw  
UT2316  
Power MOSFET  
TYPICAL CHARACTERISTICS (Cont.)  
Normalized Thermal Transient Impedance  
Duty Cycle=0.5  
2
1
0.2  
0.1  
PDM  
0.1  
0.05  
0.02  
t1  
t2  
1.Duty Cycle D=t1/t2  
2.Per Unit  
Base=RthJA=80/W  
3.TJM-TA=PDMZthJA  
4.Surface Mounted  
Single Pulse  
0.01  
10-4  
10-1  
Square Wave Pulse Duration (sec)  
1
10  
10-3  
10-2  
100  
600  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-126.C  
www.unisonic.com.tw  

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