UT2316G-AA3-R [UTC]
Small Signal Field-Effect Transistor,;
| 型号： | UT2316G-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总4页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2316
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
3
3
2
2
1
1
DESCRIPTION
SOT-23-3
SOT-23
The UTC UT2316 is N-channel enhancement mode Power
(JEDEC TO-236)
(EIAJ SC-59)
MOSFET, designed in serried ranks with fast switching
speed, low on-resistance and favorable stabilization.
Used in commercial and industrial surface mount
applications and suited for low voltage applications such as
DC/DC converters.
1
SOT-223
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
3
Halogen Free
1
2
D
S
S
UT2316L-AA3-R
UT2316L-AE2-R
UT2316G-AA3-R
UT2316G-AE2-R
UT2316G-AE3-R
SOT-223
SOT-23-3
SOT-23
G
G
G
S
D
D
Tape Reel
Tape Reel
Tape Reel
UT2316L-AE3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
UT2316G-AA3-R
(1) R: Tape Reel
(1)Packing Type
(2) AA3: SOT-223, AE2: SOT-23-3, AE3: SOT-23
(3) G: Halogen Free and Lead Free, L: Lead Free
(2)Package Type
(3)Green Package
MARKING
SOT-23
SOT-223
L: Lead Free
UT2316
L: Lead Free
G: Halogen Free
23S
G: Halogen Free
Date Code
1
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-126.E
UT2316
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATING
UNIT
V
Drain-Source Voltage
30
±20
Gate-Source Voltage
VGS
V
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1, 2)
ID
3.6
A
IDM
16
A
SOT-23-3
0.5
W
W
W
°C
°C
Total Power Dissipation (TA=25°C) SOT-23
SOT-223
PD
0.6
1
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
250
UNIT
°C/W
°C/W
°C/W
SOT-23-3
SOT-23
Junction to Ambient (Note 3)
θJA
208
SOT-223
125
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250μA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
V
1
μA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
ID(ON)
VDS=VGS, ID=250μA
VDS = 4.5V, VGS = 10V
VDS = 4.5V, VGS = 4.5V
VGS=10V, ID=3.4A
0.8
6
V
A
A
On-State Drain Current
4
42
68
50
85
mΩ
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=4.5V, ID=2.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
215
90
pF
pF
pF
Output Capacitance
VDS=15V,VGS=0V, f=1.0MHz
VDS=15V, VGS=10V, ID=3.6A
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
55
QG
QGS
QGD
tD(ON)
tR
4.3
0.65
1.2
9
7
nC
nC
nC
ns
ns
ns
ns
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
15
15
20
12
VDD=15V, VGS=10V, ID≒1A,
RG=6Ω, RL=15Ω
Turn-ON Rise Time
9
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
14
6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
VD=VG=0V, VS=1.2V
VGS=0V, IS=0.8A
0.8
A
V
Drain-Source Diode Forward Voltage(Note2)
VSD
0.88 1.2
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse width ≤300us, duty cycle ≤2%.
UNISONICTECHNOLOGIESCO.,LTD
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UT2316
Power MOSFET
TYPICAL CHARACTERISTICS
Typical Output Characteristics
VGS=10 thru 5V
Transfer Characteristics
16
14
16
14
12
10
8
12
10
8
4V
6
6
TC=125℃
25℃
3V
2V
4
4
2
0
2
-55℃
0
0
0
2
4
6
8
10
1
2
3
4
5
Drain-to-Source Voltage, VDS (V)
Gate-to-Source Voltage, VDS (V)
On-Resistance vs. Drain Current
Capacitance
0.5
0.4
0.3
350
300
250
CISS
200
150
100
0.2
0.1
COSS
VGS=4.5V
CRSS
50
0
VGS=10V
0.0
8
12
16
0
2
4
6
10
14
5
20
25
30
0
10
15
Drain-to-Current Voltage, VDS (V)
Drain Current, ID (A)
Gate Charge
Single Pulse Power
10
8
10
8
VDS=15V
ID=3.4A
6
6
TA=25℃
4
4
2
0
2
0
0.01
1
2
4
5
0
3
600
0.1
1
10
100
Total Gate Charge, Qg (nC)
Time (sec)
UNISONICTECHNOLOGIESCO.,LTD
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UT2316
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Source Current Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
30
10
TJ=150℃
0.3
0.2
ID=3.4A
TJ=25℃
1
0.1
0.0
0.1
0.0 0.2
0.4 0.6 0.8 1.0
1.2 1.4
0
2
4
6
8
10
Source-to-Drain Voltage, VSD (V)
Gate-to-Source Voltage, VGS (V)
Normalized Thermal Transient Impedance
2
1
Duty
Cycle=0.5
0.2
0.1
PDM
0.1
0.05
t1
t2
1.Duty Cycle D=t1/t2
2.Per Unit
0.02
Base=RthJA=80℃/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
Single Pulse
10-2
0.01
10-4
10-3
10-1
600
1
10
100
Square Wave Pulse Duration (sec)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
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www.unisonic.com.tw
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