UT2316_09 [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | UT2316_09 |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2316
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC UT2316 is N-channel enhancement mode
Power MOSFET, designed in serried ranks with fast switching
speed, low on-resistance and favorable stabilization.
Used in commercial and industrial surface mount
applications and suited for low voltage applications such as
DC/DC converters.
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
Halogen Free
1
S
2
G
3
D
UT2316L-AE3-R
UT2316G-AE3-R
Tape Reel
MARKING
23S
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-126.B
UT2316
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDS
VGS
ID
RATING
30
UNITS
Drain-Source Voltage
Gate-Source Voltage
V
V
±20
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1, 2)
Total Power Dissipation (Ta=25℃)
3.6
A
IDM
16
A
PD
0.96
W
℃
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
℃
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
MIN
TYP
MAX
175
UNIT
θJA
℃/W
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250μA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
V
1
μA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
ID(ON)
VDS=VGS, ID=250μA
0.8
6
V
A
A
VDS = 4.5V, VGS = 10V
On-State Drain Current
V
DS = 4.5V, VGS = 4.5V
VGS=10V, ID=3.4A
GS=4.5V, ID=2.6A
4
42
68
50
85
mΩ
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
V
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
215
90
pF
pF
pF
VDS=15V,VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time
55
tD(ON)
tR
tD(OFF)
tF
9
9
15
15
20
12
7
ns
ns
VDD=15V, VGS=10V, ID≒1A,
Turn-ON Rise Time
RG=6Ω, RL=15Ω
Turn-OFF Delay Time
Turn-OFF Fall Time
14
6
ns
ns
Total Gate Charge
QG
4.3
0.65
1.2
nC
nC
nC
VDS=15V, VGS=10V, ID=3.6A
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS=0.8A
0.88 1.2
0.8
V
A
IS
VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R502-126.B
www.unisonic.com.tw
UT2316
Power MOSFET
TYPICAL CHARACTERISTICS
Typical Output Characteristics
VGS=10 thru 5V
Transfer Characteristics
16
14
16
14
12
10
8
12
10
8
4V
6
6
TC=125℃
25℃
3V
2V
4
4
2
0
2
-55℃
0
0
0
2
4
6
8
10
1
2
3
4
5
Drain-to-Source Voltage, VDS (V)
Gate-to-Source Voltage, VDS (V)
On-Resistance vs. Drain Current
Capacitance
0.5
0.4
0.3
350
300
250
CISS
200
150
100
0.2
0.1
COSS
VGS=4.5V
CRSS
50
0
VGS=10V
0.0
8
12
16
0
2
4
6
10
14
5
20
25
30
0
10
15
Drain-to-Current Voltage, VDS (V)
Drain Current, ID (A)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-126.B
www.unisonic.com.tw
UT2316
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal Transient Impedance
Duty Cycle=0.5
2
1
0.2
0.1
PDM
0.1
0.05
0.02
t1
t2
1.Duty Cycle D=t1/t2
2.Per Unit
Base=RthJA=80℃/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
Single Pulse
0.01
10-4
10-1
Square Wave Pulse Duration (sec)
1
10
10-3
10-2
100
600
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-126.B
www.unisonic.com.tw
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