UT70N03-TN3-T [UTC]
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN;
| 型号： | UT70N03-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总3页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT70N03
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UT70N03 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON)< 9mΩ @ VGS=10V, ID=33A
* RDS(ON)< 18mΩ @ VGS=4.5V, ID=20A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
Lead-free:
UT70N03L
Halogen-free: UT70N03G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
G
G
2
D
D
3
S
S
UT70N03-TN3-R
UT70N03-TN3-T
UT70N03L-TN3-R
UT70N03L-TN3-T
UT70N03G-TN3-R
UT70N03G-TN3-T
TO-252
TO-252
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
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QW-R502-269.a
UT70N03
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Junction Temperature
Storage Temperature
60
A
IDM
195
A
53
0.36
W
W/°C
℃
PD
TJ
+175
-55 ~ +175
TSTG
℃
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
110
2.8
UNIT
℃/W
℃/W
Junction-to-Ambient
Junction-to-Case
θJC
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250µA
30
V
VDS=30V, VGS=0V
VGS=±20V
1
µA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=33A
VGS=4.5V, I =20A
VDS=10V, ID=33A
1
3
9
V
mΩ
S
Static Drain-Source On-Resistance
18
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
35
CISS
COSS
CRSS
1485
245
pF
pF
pF
VDS=25V, VGS=0V, f=1.0MHz
VDS=20V, VGS=4.5V, ID=33A
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
170
QG
QGS
QGD
tD(ON)
tR
16.5
5
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
10.3
8.2
Turn-ON Delay Time
Turn-ON Rise Time
VGS=10V, VDS=15V, ID=33A,
RD=0.45ꢀ, RG=3.3ꢀ
105
21.4
8.5
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 2)
Maximum Body-Diode Continuous Current
Pulsed Source Current (Body Diode)
(Note 1)
VSD
IS
IS=60A, VGS=0V
1.3
60
V
A
VD=VG=0V, VS=1.3V
ISM
195
A
Note :1. Pulse width limited by safe operating area.
Note :2. Pulse width < 300us, duty cycle < 2%.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-269.a
www.unisonic.com.tw
UT70N03
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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