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UTD351G-AE2-R [UTC]

Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN AND LEAD FREE PACKAGE-3;
UTD351G-AE2-R
型号： UTD351G-AE2-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN AND LEAD FREE PACKAGE-3

开关 光电二极管 晶体管
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UNISONIC TECHNOLOGIES CO., LTD  
UTD351  
Power MOSFET  
N-CHANNEL  
ENHANCEMENT MODE  
DESCRIPTION  
As N-Channel Logic Level MOSFET, UTD351 has been  
optimized for battery power management applications. And  
it’s produced using UTC’s Trench process.  
SYMBOL  
ORDERING INFORMATION  
Pin Assignment  
Order Number  
Package  
Packing  
1
S
S
2
3
D
D
UTD351G-AE2-R  
UTD351G-AE3-R  
SOT-23-3  
SOT-23  
G
G
Tape Reel  
Tape Reel  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
MARKING  
BCAG  
www.unisonic.com.tw  
Copyright © 2014 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-154.C  
UTD351  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
30  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current (Note 3)  
Pulsed Drain Current  
Power Dissipation  
±20  
1.4  
A
IDM  
10  
PD  
0.5  
W
°C  
°C  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
250  
75  
MAX  
UNIT  
°C/W  
°C/W  
Junction-to-Ambient (Note 3)  
Junction-to-Case  
θJC  
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
Breakdown Voltage Temperature  
Coefficient  
BVDSS  
IDSS  
VGS =0 V, ID =250 µA  
30  
V
VDS =24 V, VGS =0 V  
VGS = ±20V, VDS = 0 V  
1
µA  
nA  
IGSS  
±100  
∆BVDSS/∆TJ ID=250μA, Referenced to 25°C  
26  
mV/℃  
ON CHARACTERISTICS (Note2)  
Gate-Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS =VGS, ID =250 µA  
GS =10 V, ID =1.4 A  
0.8  
2.1  
92  
3
V
V
160  
250  
Static Drain–Source On–Resistance  
mΩ  
VGS =4.5 V, ID =1.2 A  
120  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
145  
35  
Output Capacitance  
VDS =15 V, VGS =0V, f=1.0MHz  
pF  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS (Note2)  
Turn-ON Delay Time  
Turn-ON Rise Time  
15  
tD(ON)  
tR  
tD(OFF)  
tF  
3
8
6
16  
29  
4
VDD =15V, ID=1A, VGS =10V,  
ns  
nC  
A
RGEN =6 ꢀ  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
16  
2
Total Gate Charge  
QG  
1.3  
0.5  
0.5  
1.8  
Gate-Source Charge  
Gate-Drain Charge  
QGS  
QGD  
VDS =15 V,VGS =4.5 V,ID =1.4 A  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Continuous Drain-Source  
Diode Forward Current  
IS  
0.42  
1.2  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
VSD  
tRR  
VGS = 0 V, IS = 0.42 A (Note 2)  
0.8  
11  
4
V
ns  
nC  
IF = 1.4 A, dIF/dt = 100 A/μs  
Reverse Recovery Charge  
QRR  
Notes: 1. Pulse width limited by TJ(MAX)  
2. Pulse width ≤300us, duty cycle ≤2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board; 250℃/W when mounted on min.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-154.C  
www.unisonic.com.tw  
UTD351  
Power MOSFET  
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOICO., LTD  
of 5  
QW-R502154.C  
www.unisonic.com.tw  
UTD351  
Power MOSFET  
TYPICAL CHARACTERISTICS(Cont.)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R502-154.C  
www.unisonic.com.tw  
UTD351  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-154.C  
www.unisonic.com.tw  

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