UTD351L-AE3-R [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | UTD351L-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTD351
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
As N-Channel Logic Level MOSFET, UTD351 has been
optimized for battery power management applications. And
it’s produced using UTC’s Trench process.
SYMBOL
3.Drain
2.Gate
*Pb-free plating product number: UTD351L
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-23
Normal
Lead Free Plating
UTD351L-AE3-R
1
2
3
UTD351-AE3-R
S
G
D
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
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QW-R502-154.A
UTD351
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
Continuous Drain Current (Note 3)
Pulsed Drain Current
1.4
A
IDM
10
Power Dissipation
PD
0.5
W
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
250
75
MAX
UNIT
°C/W
°C/W
Junction-to-Ambient (Note 3)
Junction-to-Case
θJC
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
VGS =0 V, ID =250 µA
30
V
VDS =24 V, VGS =0 V
VGS = ±20V, VDS = 0 V
1
µA
nA
IGSS
±100
∆BVDSS/∆TJ ID=250µA, Referenced to 25°C
26
mV/℃
ON CHARACTERISTICS (Note2)
Gate-Threshold Voltage
VGS(TH)
RDS(ON)
VDS =VGS, ID =250 µA
VGS =10 V, ID =1.4 A
VGS =4.5 V, ID =1.2 A
0.8
2.1
92
3
V
160
250
Static Drain–Source On–Resistance
mΩ
120
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
145
35
VDS =15 V, VGS =0V, f=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note2)
Turn-ON Delay Time
Turn-ON Rise Time
15
tD(ON)
tR
tD(OFF)
tF
3
8
6
16
29
4
VDD =15V, ID=1A, VGS =10V,
ns
nC
A
RGEN =6 ꢀ
Turn-OFF Delay Time
Turn-OFF Fall-Time
16
2
Total Gate Charge
QG
1.3
0.5
0.5
1.8
VDS =15 V,VGS =4.5 V,ID =1.4 A
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
Diode Forward Current
IS
0.42
1.2
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
tRR
VGS = 0 V, IS = 0.42 A (Note 2)
0.8
11
4
V
ns
nC
IF = 1.4 A, dIF/dt = 100 A/µs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 250℃/W when mounted on min.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-154.A
www.unisonic.com.tw
UTD351
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOICO., LTD
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UTD351
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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UTD351
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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