UTT60N10L-TN3-R [UTC]
N-CHANNEL MOSFET TRANSISTOR;
| 型号： | UTT60N10L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL MOSFET TRANSISTOR |
| 文件： | 总5页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTT60N10
Power MOSFET
60A, 100V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET TRANSISTOR
1
TO-220
DESCRIPTION
The UTC UTT60N10 is an N-channel enhancement power
1
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON), high switching speed, high current
capacity and low gate charge.
TO-220F1
TO-252
The UTC UTT60N10 is suitable for motor control, AC-DC or
DC-DC converters and audio amplifiers, etc.
1
FEATURES
* RDS(ON) < 24mΩ @ VGS=10V, ID=30A
* High Switching Speed
* High Current Capacity
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
UTT60N10L-TA3-T
UTT60N10G-TA3-T
UTT60N10G-TF1-T
UTT60N10G-TN3-R
TO-220
TO-220F1
TO-252
G
G
G
Tube
Tube
UTT60N10L-TF1-T
UTT60N10L-TN3-R
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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UTT60N10
Power MOSFE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
100
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±25
V
Continuous
Pulsed
60
A
Drain Current
IDM
100
A
Avalanche Energy
Single Pulsed
TO-220
EAS
270
mJ
W
W
W
°C
°C
100
Power Dissipation
PD
TO-220F1
TO-252
114
150
Junction Temperature
Storage Temperature
TJ
TSTG
-55 ~ 150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220/ TO-220F1
TO-252
Junction to Ambient
Junction to Case
θJA
100
TO-220
1.25
θJC
°C/W
TO-220F1
TO-252
1.77
2.5
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VGS=+25V, VDS=0V
100
V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
1.0
3.0
24
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
15
mꢀ
CISS
COSS
CRSS
1320 1900 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
330 680
132 200
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
140
180
2180
396
213
17
ns
ns
VDD=30V, ID=0.5A, RG=50ꢀ,
VGS=10V
Turn-OFF Delay Time
Fall-Time
ns
ns
Total Gate Charge
QG
nC
nC
nC
VGS=10V, VDS=25V, ID=1.3A,
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
IG=100µA
33
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
60
A
A
V
ISM
VSD
100
IS=30A, VGS=0V
1.5
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UTT60N10
Power MOSFE
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
QGS
VDS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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UTT60N10
Power MOSFE
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
(Driver
)
10V
IFM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UTT60N10
Power MOSFE
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
0
50
0
0
25
50
75
100 125
0
0.5
1.0 1.5
2.0 2.5 3.0
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Body-Diode Continuous Current vs.
Source to Drain Voltage
Characteristics
35
30
35
VGS=10V, ID=30A
30
25
20
25
20
15
10
15
10
5
0
5
0
0
100
200
300
400 500
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (mV)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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