-SP10NAD600S704-PE19F18T [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | -SP10NAD600S704-PE19F18T |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总35页 (文件大小：7639K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
flowANPC S3 split
950 V / 600 A
Topology features
flow S3 12 mm housing
● Temperature sensor
● Advanced Neutral Point Clamped topology
● Integrated Capacitor
● Split topology
Component features
● Low collector emitter saturation voltage
● High speed and smooth switching
Housing features
PE19F18T
PE29F18T
● Base isolation: AlN
● CTI600 housing material
● Compact, baseplate-less housing
● VINcoPress Technology
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Schematic
PE19F18T
Extra features
● Heat-Pipe and Heat-Sink optimized layout
● PCB layout optimized pinout
Target applications
PE29F18T
● Energy Storage Systems
● Solar Inverters
Types
● B0-SP10NAD600S704-PE19F18T
● B0-SP10NAE600S704-PE29F18T
Copyright Vincotech
1
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC Switch
VCES
Collector-emitter voltage
950
461
800
599
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC Diode
VRRM
Peak repetitive reverse voltage
950
191
600
365
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch
VCES
Collector-emitter voltage
950
282
800
539
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
DC-Link Diode
VRRM
Peak repetitive reverse voltage
950
191
600
365
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
DC-Link Switch
VCES
Collector-emitter voltage
950
382
1200
704
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Neutral Point Diode
VRRM
Peak repetitive reverse voltage
1200
171
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
728
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
1040
431
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
3
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (DC)
750
1000
VMAX
Maximum DC voltage
Tj = 125 °C
Tj = 150 °C
V
750
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
V
>12,7
mm
mm
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
11,99
11,39
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
4
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0065
400
25
4,15
4,85
5,65
V
V
25
1,21
1,23
1,24
1,4(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
25
8
µA
nA
Ω
20
200
0,75
49200
530
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
220
±15
0
4100
Thermal
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,16
K/W
AC Diode
Static
25
2,1
2,59
2,43
2,37
2,8(1)
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
12
µA
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,26
K/W
Copyright Vincotech
5
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0065
400
25
4,35
5,1
5,85
V
V
25
1,82
2,07
2,13
2,25(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
25
8
µA
nA
Ω
20
200
0,75
25200
540
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
80
±15
0
900
Thermal
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,18
K/W
Dynamic
25
207,36
211,69
213,64
36,11
38,61
39,6
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
Rise time
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
176,43
210,44
220,65
26,39
46,75
56,01
7,81
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
355
tf
125
150
25
ns
QrFWD=1,08 µC
QrFWD=1,11 µC
QrFWD=1,12 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
7,54
mWs
mWs
7,55
12,45
17,92
20,04
Eoff
125
150
Copyright Vincotech
6
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Diode
Static
25
2,1
2,59
2,43
2,37
2,8(1)
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
12
µA
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,26
K/W
25
69,54
69,01
68,97
25,67
26,2
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
26,4
1,08
di/dt=6618 A/µs
di/dt=5990 A/µs
di/dt=6156 A/µs
Qr
Recovered charge
±15
600
355
125
150
25
1,11
μC
1,12
0,411
0,425
0,431
7251,59
7000,21
6801,22
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
7
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00975 25
25
4,35
5,1
5,85
V
V
1,82
2,07
2,13
2,25(1)
VCEsat
Collector-emitter saturation voltage
15
600
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
12
µA
nA
Ω
20
25
300
0,5
37800
810
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
120
±15
0
1350
Thermal
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,14
K/W
25
207,36
211,69
213,64
36,11
38,61
39,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
176,43
210,44
220,65
26,39
46,75
56,01
7,81
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
355
tf
125
150
25
ns
QrFWD=0,395 µC
QrFWD=0,43 µC
QrFWD=0,469 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
7,54
mWs
mWs
7,55
12,45
17,92
20,04
Eoff
125
150
Copyright Vincotech
8
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Diode
Static
25
1,72
2,17
2,32
1,8(1)
1600
VF
IR
Forward voltage
160
125
150
V
Reverse leakage current
Vr = 1200 V
25
280
µA
Thermal
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,22
K/W
Dynamic
25
69,54
69,01
68,97
25,67
26,2
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
26,4
0,395
0,43
di/dt=6618 A/µs
di/dt=5990 A/µs
di/dt=6156 A/µs
Qr
Recovered charge
±15
600
355
125
150
25
μC
0,469
0,106
0,12
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
0,14
7251,59
7000,21
6801,22
(dirf/dt)max
125
150
Copyright Vincotech
9
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
750
0,1
V
Tolerance
-5
5
%
%
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
AC Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1000
1000
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
750
500
250
0
750
500
250
0
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGE
Tj =
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
400
10
-1
300
200
100
0
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,158
25 °C
125 °C
150 °C
VCE
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,88E-03
4,29E-02
5,31E-02
4,03E-02
1,24E-02
4,48E+00
9,18E-01
1,30E-01
2,06E-02
1,11E-03
Copyright Vincotech
11
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
AC Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
AC Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,26
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,71E-02
5,54E-02
1,05E-01
4,70E-02
2,60E-02
2,94E+00
5,40E-01
5,17E-02
7,63E-03
6,45E-04
Copyright Vincotech
13
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Neutral Point Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
800
800
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
600
400
200
0
600
400
200
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGE
=
Tj =
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
125
10
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
tp(s)
V
GE(V)
tp
=
=
250
24
μs
V
D =
tp / T
0,176
25 °C
125 °C
150 °C
VCE
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,35E-02
4,39E-02
5,74E-02
4,99E-02
1,17E-02
5,32E+00
1,45E+00
2,58E-01
2,79E-02
1,38E-03
Copyright Vincotech
14
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Neutral Point Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
DC-Link Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,26
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,71E-02
5,54E-02
1,05E-01
4,70E-02
2,60E-02
2,94E+00
5,40E-01
5,17E-02
7,63E-03
6,45E-04
Copyright Vincotech
16
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
DC-Link Switch Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1250
1250
VGE
:
7 V
8 V
9 V
1000
750
500
250
0
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGE
Tj =
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 17.
IGBT
figure 18.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
200
10
-1
10
150
100
50
-2
10
-3
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
10
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
tp(s)
V
GE(V)
tp
=
=
250
24
μs
V
D =
tp / T
0,135
25 °C
125 °C
150 °C
VCE
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,28E-03
3,75E-02
4,26E-02
3,69E-02
8,68E-03
5,97E+00
1,43E+00
2,44E-01
2,77E-02
1,44E-03
Copyright Vincotech
17
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
DC-Link Switch Characteristics
figure 19.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
18
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Neutral Point Diode Characteristics
figure 20.
FWD
figure 21.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,22
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,72E-02
5,85E-02
6,62E-02
5,58E-02
2,27E-02
5,65E+00
1,24E+00
1,43E-01
1,83E-02
2,11E-03
Copyright Vincotech
19
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Thermistor Characteristics
figure 22.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
20
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Neutral Point Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
40
35
30
25
20
15
10
5
30
25
20
15
10
5
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
0
0
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
VGE
Rgon
Rgoff
2
figure 25.
FWD
figure 26.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Neutral Point Switching Characteristics
figure 27.
IGBT
figure 28.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
tr
tf
-1
10
tr
tf
-2
10
-3
10
-2
10
0
100
200
300
400
500
600
700
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
150
600
±15
355
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
V
A
2
figure 29.
FWD
figure 30.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Neutral Point Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 33.
FWD
figure 34.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
100
80
60
40
20
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
23
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Neutral Point Switching Characteristics
figure 35.
FWD
figure 36.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
12000
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
100
200
300
400
500
600
700
IC(A)
0
1
2
3
4
5
6
7
8
9
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 37.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
900
IC MAX
800
700
600
500
400
300
200
100
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
2
2
Ω
Ω
Copyright Vincotech
24
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
DC-Link Switching Characteristics
figure 38.
IGBT
figure 39.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
40
35
30
25
20
15
10
5
30
25
20
15
10
5
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eon
Eoff
Eon
Eon
0
0
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
VGE
Rgon
Rgoff
2
figure 40.
FWD
figure 41.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
25
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
DC-Link Switching Characteristics
figure 42.
IGBT
figure 43.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
tr
tf
-1
10
tr
tf
-2
10
-3
10
-2
10
0
100
200
300
400
500
600
700
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
150
600
±15
355
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
V
A
2
figure 44.
FWD
figure 45.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
26
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
DC-Link Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 48.
FWD
figure 49.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
100
80
60
40
20
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
27
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
DC-Link Switching Characteristics
figure 50.
FWD
figure 51.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
12000
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
100
200
300
400
500
600
700
IC(A)
0
1
2
3
4
5
6
7
8
9
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 52.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
2
2
Ω
Ω
Copyright Vincotech
28
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Switching Definitions
figure 53.
IGBT
figure 54.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 55.
IGBT
figure 56.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
29
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Switching Definitions
figure 57.
FWD
figure 58.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
30
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Ordering Code
Marking
Version
Ordering Code
B0-SP10NAD600S704-PE19F18T
B0-SP10NAD600S704-PE19F18T-/7/
Without thermal paste
With thermal paste (5,2 W/mK, PTM6000HV)
Name
Date code
UL & VIN
Lot
Serial
Text
Datamatrix
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
TTTTTTTVV
LLLLL
High Side Module B0-SP10NAD600S704-PE19F18T
Outline
Pin table [mm]
Pin
1
2
3
4
5
6
7
8
X
Y
2,7
2,7
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Function
GND1
GND1
GND1
GND1
GND1
GND1
GND1
GND1
GND1
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
Therm1
Therm2
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
S13
G13
G11
S11
S16
G16
52,4
49,7
52,4
49,7
47
44,3
41,6
38,9
36,2
24,3
21,6
18,9
16,2
13,5
10,8
8,1
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
5,4
2,7
0
0
0
0
0
0
2,7
43,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
47,7
46,45
12,25
12,25
20,4
20,4
34,9
25,4
28,1
30,8
33,5
36,2
38,9
41,6
44,3
47
49,7
52,4
36,4
39,9
18,65
21,65
49
46
24,95
C13
Copyright Vincotech
31
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
High Side Module B0-SP10NAD600S704-PE19F18T
Pinout
DC+
10-20
Rt
22
21
Therm1
Therm2
T11
D11
G11
S11
36
C10
37
C13
40
D14
T16
T13
D16
G16
S16
G13
S13
39
38
35
34
GND1
1-9
Ph1
23-33
Identification
Component
Voltage
Current
Function
Comment
ID
T13
D14
T16
D11
T11
D16
C10
Rt
IGBT
FWD
IGBT
FWD
IGBT
950 V
950 V
950 V
950 V
950 V
1200 V
1000 V
400 A
300 A
400 A
300 A
600 A
160 A
AC Switch
AC Diode
Neutral Point Switch
DC-Link Diode
DC-Link Switch
Neutral Point Diode
Capacitor (DC)
Thermistor
FWD
Capacitor
Thermistor
Copyright Vincotech
32
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste (5,2 W/mK, PTM6000HV)
B0-SP10NAE600S704-PE29F18T
B0-SP10NAE600S704-PE29F18T-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Low Side Module B0-SP10NAE600S704-PE29F18T
Outline
Pin table [mm]
Pin
1
2
3
4
X
Y
2,7
0
0
0
Function
DC-
DC-
DC-
DC-
52,4
52,4
49,7
47
5
6
7
8
44,3
41,6
38,9
36,2
33,5
30,8
28,1
16,2
13,5
10,8
8,1
5,4
2,7
0
2,7
0
0
2,7
5,4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
DC-
DC-
DC-
DC-
DC-
DC-
DC-
GND2
GND2
GND2
GND2
GND2
GND2
GND2
GND2
GND2
Ph2
Ph2
Ph2
Ph2
Ph2
Ph2
Ph2
Ph2
Ph2
Ph2
Ph2
Therm1
Therm2
G14
S14
G12
S12
S15
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
2,7
2,7
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
43,4
34,5
33,2
26,4
26,4
17,5
17,5
29,85
8,1
10,8
13,5
16,2
18,9
21,6
24,3
27
52,4
52,4
12,5
16
46
49
23,5
20,5
24,85
G15
C12
Copyright Vincotech
33
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Low Side Module B0-SP10NAE600S704-PE29F18T
Pinout
GND2
12-20
Ph2
21-31
T15
T14
D15
D13
G15
S15
G14
S14
39
38
34
35
C12
40
C20
T12
D12
G12
S12
36
37
Rt
33
Therm2
32
1-11
DC-
Therm1
Identification
Component
Voltage
Current
Function
Comment
ID
T14
D13
T15
D12
T12
D15
C20
Rt
IGBT
FWD
IGBT
FWD
IGBT
950 V
950 V
950 V
950 V
950 V
1200 V
1000 V
400 A
300 A
400 A
300 A
600 A
160 A
AC Switch
AC Diode
Neutral Point Switch
DC-Link Diode
DC-Link Switch
Neutral Point Diode
Capacitor (DC)
Thermistor
FWD
Capacitor
Thermistor
Copyright Vincotech
34
23 Nov. 2022 / Revision 3
B0-SP10NAD600S704-PE19F18T
B0-SP10NAE600S704-PE29F18T
datasheet
Packaging instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SP10NAx600S704-PEx9F18T-D3-14
23 Nov. 2022
New color of the frame: White
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
35
23 Nov. 2022 / Revision 3
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