10-EZ124PA018MR-LR09F08T [VINCOTECH]
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode;
| 型号： | 10-EZ124PA018MR-LR09F08T |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode |
| 文件： | 总17页 (文件大小：6652K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-EZ124PA018MR-LR09F08T
datasheet
fastPACK E1 SiC
1200 V / 18 mΩ
Topology features
flow E1 12 mm housing
● Kelvin Emitter for improved switching performance
● Temperature sensor
Component features
● Fast reverse recovery
● High speed SiC-MOSFET technology
● Low on-resistance
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● 0.38 mm ceramic
● Compact housing
● CTI600 housing material
Schematic
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Charging Stations
Types
● 10-EZ124PA018MR-LR09F08T
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
H-Bridge Switch
VDSS
Drain-source voltage
1200
49
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
204
A
Ptot
Total power dissipation
102
W
-2 / 21
-6 / 23
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,62
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
H-Bridge Switch
Static
25
19
22,5(1)
rDS(on)
Drain-source on-state resistance
18
42
125
150
33,2
38,4
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
0
0,0222
25
25
25
2,8
3,2
4,8
200
50
V
-2/21
0
0
-200
nA
µA
Ω
1200
2
2
Qg
182
40
QGS
QGD
Ciss
Coss
Crss
VSD
Gate to source charge
0/18
800
42
25
nC
Gate to drain charge
48
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
4670
140
10
f = 1 Mhz
0
0
800
0
25
25
pF
V
42
3,3
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,93
K/W
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Dynamic
25
53,53
44,49
43,03
46,28
34,92
32,78
118,75
143,95
149,47
15,66
17,11
18,11
1,81
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
td(off)
tf
Rise time
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
Turn-off delay time
125
150
25
ns
Fall time
125
150
25
ns
QrFWD=0,378 µC
QrFWD=0,591 µC
QrFWD=0,757 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
125
150
25
1,32
mWs
mWs
A
1,3
0,907
0,948
0,973
24,7
Eoff
0/15
600
64
125
150
25
IRRM
125
150
25
32,85
37,76
25,82
29,11
31,62
0,378
0,591
0,757
0,08
trr
125
150
25
ns
di/dt=1780 A/µs
di/dt=2562 A/µs
di/dt=2506 A/µs
Qr
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,175
0,24
mWs
A/µs
2768,88
3442,63
4088,41
(dirf/dt)max
125
150
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
25
5
kΩ
%
Deviation of R100
R100 = 499 Ω
100
25
3,2
3,3
Power dissipation
Power dissipation constant
B-value
130
1,3
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
3380
Vincotech Thermistor Reference
V
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
H-Bridge Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
175
175
150
125
100
75
VGS
:
-4 V
-2 V
0 V
150
125
100
75
14 V
15 V
16 V
17 V
18 V
19 V
20 V
50
25
0
-25
-50
-75
-100
-125
-150
-175
50
25
0
0,0
2,5
5,0
7,5
10,0
12,5
-15
-10
-5
0
5
10
15
V
DS(V)
VDS(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGS
=
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
120
10
100
80
60
40
20
0
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,933
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,95E-02
1,91E-01
5,21E-01
1,15E-01
3,66E-02
2,25E+00
2,69E-01
6,22E-02
7,38E-03
9,33E-04
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
H-Bridge Switch Characteristics
figure 5.
MOSFET
figure 6.
MOSFET
Safe operating area
Gate voltage vs gate charge
ID = f(VDS
)
VGS = f(Qg)
1000
22,5
20,0
17,5
15,0
12,5
10,0
7,5
100
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
175
200
V
DS(V)
Qg(μC)
D =
ID
=
single pulse
21
25
A
Ts =
Tj =
80
15
°C
V
°C
VGS
=
Tj =
Tjmax
Copyright Vincotech
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11 Mar. 2022 / Revision 1
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datasheet
Thermistor Characteristics
figure 7.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
H-Bridge Switching Characteristics
figure 8.
MOSFET
figure 9.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
5
4
3
2
1
0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
0/15
16
V
V
Ω
Ω
125 °C
150 °C
600
0/15
64
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 10.
MOSFET
figure 11.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
0/15
16
V
V
Ω
125 °C
150 °C
600
0/15
64
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
H-Bridge Switching Characteristics
figure 12.
MOSFET
figure 13.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
tr
td(on)
td(on)
tr
tf
tf
-2
10
-2
10
0
25
50
75
100
125
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
16
°C
V
150
600
0/15
64
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
16
figure 14.
MOSFET
figure 15.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
0/15
16
V
V
Ω
At
600
0/15
64
V
V
A
25 °C
25 °C
VGS
VGS
ID
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
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11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
H-Bridge Switching Characteristics
figure 16.
MOSFET
figure 17.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
16
V
V
Ω
At
600
0/15
64
V
V
A
25 °C
25 °C
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 18.
MOSFET
figure 19.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
25
50
75
100
125
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
0/15
64
V
25 °C
25 °C
0/15
16
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
11
11 Mar. 2022 / Revision 1
10-EZ124PA018MR-LR09F08T
datasheet
H-Bridge Switching Characteristics
figure 20.
MOSFET
figure 21.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
8000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
25
50
75
100
125
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
16
V
V
Ω
At
600
V
V
A
25 °C
25 °C
VGS
125 °C
150 °C
0/15
64
125 °C
150 °C
Tj:
Tj:
Rgon
figure 22.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
100
ID MAX
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
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11 Mar. 2022 / Revision 1
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datasheet
H-Bridge Switching Definitions
figure 23.
MOSFET
figure 24.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 25.
MOSFET
figure 26.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
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H-Bridge Switching Definitions
figure 27.
FWD
figure 28.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 29.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
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datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-EZ124PA018MR-LR09F08T
10-EZ124PA018MR-LR09F08T-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
Ph2
32
32
0
2
3,2
0
Ph2
3
19,2
19,2
16
S13
4
3,2
0
G13
5
S11
6
16
3,2
0
G11
7
3,2
0
Ph1
8
0
Ph1
9
0
6,4
16
Therm2
Therm1
DC+
DC+
G12
10
11
12
13
14
15
16
17
18
19
20
21
22
0
0
22,4
25,6
22,4
25,6
22,4
25,6
22,4
25,6
12,8
12,8
12,8
12,8
0
12,8
12,8
19,2
19,2
32
S12
G14
S14
DC+
DC+
DC-
32
25,6
22,4
19,2
12,8
DC-
DC-
DC-
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datasheet
Pinout
DC+
11,12,17,18
T12
T14
G12
S12
G14
S14
13
14
15
16
Ph1
7,8
Ph2
1,2
T11
T13
G11
S11
G13
S13
Rt
6
5
4
3
Therm1
10
Therm2
9
DC-
19,20,21,22
Identification
Component
Voltage
1200 V
Current
Function
Comment
ID
T11, T12, T13, T14
MOSFET
18 mΩ
H-Bridge Switch
Thermistor
Rt
Thermistor
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E1 packages see vincotech.com website.
Package data
Package data for flow E1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-EZ124PA018MR-LR09F08T-D1-14
11 Mar. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
11 Mar. 2022 / Revision 1
相关型号：
10-EZ124PA032ME-LQ17F18T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
10-EZ126PA025M7-L858F78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-EZ126PA025SC-L858F48T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-EZ126PA035M7-L859F78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-EZ126PA035SC-L859F48T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-EZ126PA050M7-L850F78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-EZ126PB075ME-LS17F08T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
10-EZ126TA025SC-L858F43T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-EZ12PMA010M7-L927A78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-EZ12PMA010SC-L927A08T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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