10-F1127PA035SC-L168E09 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-F1127PA035SC-L168E09 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总29页 (文件大小：9310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F1127PA035SC-L168E09
datasheet
flow7PACK 1
1200 V / 35 A
Features
flow 1 17 mm housing
● Compact Flow 1 housing
● Trench Fieldstop IGBT4 Technology
● Compact and Low Inductive Design
● Built-in NTC
Schematic
Target applications
● Motor Drives
● Power Generation
Types
● 10-F1127PA035SC-L168E09
Copyright Vincotech
1
30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
39
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
105
101
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
43
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
70
A
Ptot
80
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
1200
39
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
105
101
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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10-F1127PA035SC-L168E09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
24
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
52
W
°C
Tjmax
Maximum junction temperature
175
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
15
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
15
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-F1127PA035SC-L168E09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0012
35
25
5,3
5,8
6,3
V
25
1,58
1,86
2,3
2,07(1)
15
0
V
150
1200
0
25
25
5
µA
nA
Ω
20
120
None
2000
70
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
270
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,94
K/W
25
90,8
93,6
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
18,8
tr
150
25
22,8
Rgon = 16 Ω
Rgoff = 16 Ω
204,4
264,4
71,63
109,14
2,02
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
35
tf
ns
150
25
QrFWD=3,56 µC
QrFWD=6,93 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
3,09
1,76
150
2,8
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,35
1,76
1,73
1,69
2,05(1)
VF
IR
Forward voltage
35
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
7,7
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,19
K/W
25
47,77
52,78
250,98
352,56
3,56
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
trr
ns
150
25
di/dt=2303 A/µs
di/dt=1645 A/µs
Qr
±15
600
35
μC
150
25
6,93
1,38
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
2,83
2000
(dirf/dt)max
150
389,56
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0012
35
25
5,3
5,8
6,3
V
25
1,58
1,86
2,3
2,07(1)
15
0
V
150
1200
0
25
25
5
µA
nA
Ω
20
120
None
2000
70
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
270
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,94
K/W
25
85,6
87,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
89,2
41,8
tr
125
150
25
42,8
41,8
Rgon = 16 Ω
Rgoff = 16 Ω
205,8
258,4
272,4
70,74
125,9
139,48
2,6
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
35
tf
125
150
25
ns
QrFWD=2,33 µC
QrFWD=3,92 µC
QrFWD=4,39 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
3,28
mWs
mWs
3,46
2,06
Eoff
125
150
3,16
3,53
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,35
1,84
1,78
2,05(1)
3,5
VF
IR
Forward voltage
15
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,82
K/W
25
13,41
16,1
IRRM
Peak recovery current
125
150
25
A
16,83
365,97
552,14
602,61
2,33
trr
Reverse recovery time
125
150
25
ns
di/dt=670 A/µs
di/dt=632 A/µs
di/dt=592 A/µs
Qr
Recovered charge
±15
600
35
125
150
25
3,92
μC
4,39
0,966
1,68
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,89
41
(dirf/dt)max
125
150
41
40,98
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Sw. Protection Diode
Static
25
1,23
1,66
1,62
1,97(1)
27
VF
IR
Forward voltage
7,5
V
125
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,12
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,938
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,15E-01
4,15E-01
2,99E-01
7,22E-02
3,82E-02
9,47E-01
1,24E-01
4,81E-02
5,86E-03
5,62E-04
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
10µs
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,187
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,30E-02
1,30E-01
5,50E-01
2,26E-01
1,15E-01
9,49E-02
8,50E-03
2,93E+00
4,06E-01
7,36E-02
2,16E-02
4,46E-03
5,82E-04
2,11E-04
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datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,938
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,15E-01
4,15E-01
2,99E-01
7,22E-02
3,82E-02
9,47E-01
1,24E-01
4,81E-02
5,86E-03
5,62E-04
Copyright Vincotech
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Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
10µs
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,825
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,17E-02
1,60E-01
7,42E-01
5,21E-01
3,30E-01
3,47E+00
4,37E-01
7,65E-02
2,19E-02
3,81E-03
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datasheet
Brake Sw. Protection Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,124
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,00E-02
1,48E-01
7,34E-01
5,90E-01
3,47E-01
2,36E-01
3,23E+00
4,03E-01
6,67E-02
2,04E-02
4,32E-03
8,05E-04
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Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Eon
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
150 °C
600
±15
35
V
150 °C
V
V
A
Rgon
Rgoff
Ω
Ω
16
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
150 °C
600
±15
35
V
150 °C
V
V
A
Ω
Copyright Vincotech
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30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
td(off)
-1
10
tr
tf
td(on)
-1
10
-2
10
tr
-2
10
-3
10
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
16
°C
150
600
±15
35
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
16
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
150 °C
600
±15
35
V
150 °C
V
V
A
Ω
Copyright Vincotech
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30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
12
10
8
9
8
7
6
5
4
3
2
1
0
Qr
Qr
6
Qr
Qr
4
2
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
150 °C
600
±15
35
V
150 °C
V
V
A
Ω
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
70
60
50
40
30
20
10
0
150
125
100
75
IRM
IRM
50
25
IRM
IRM
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
150 °C
600
±15
35
V
V
A
150 °C
V
Ω
Copyright Vincotech
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30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
3500
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
150 °C
600
±15
35
V
V
A
150 °C
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
16
Ω
Ω
Copyright Vincotech
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30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
12
10
8
8
7
6
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
6
Eoff
Eoff
4
Eoff
Eoff
2
0
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Rgoff
Ω
Ω
16
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
125 °C
150 °C
600
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
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30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
tf
tf
td(on)
-1
10
-1
tr
10
tr
-2
10
-2
10
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
16
°C
150
600
±15
35
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
16
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
1,2
1,0
0,8
0,6
0,4
0,2
0,0
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
22
30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
17,5
15,0
12,5
10,0
7,5
40
35
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
Copyright Vincotech
23
30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
900
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
800
dirr/dt ──────
700
600
500
400
300
200
100
0
0
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
125 °C
150 °C
600
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
24
30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-F1127PA035SC-L168E09
10-F1127PA035SC-L168E09-/7/
10-F1127PA035SC-L168E09-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
BRCE
BRCG
EI6
52,5
49,5
36,6
33,9
33,9
33,9
15,9
13,2
13,2
13,2
2,7
2
0
3
0
4
0
EI6
5
3
SI6
GI6
EI5
6
6
7
0
8
0
EI5
9
3
SI5
GI5
EI4
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
6
0
0
0
EI4
0
3
SI4
GI4
INV+
GI1
SI1
U
0
6
0
14,25
22,5
25,5
28,5
28,5
28,5
25,5
22,5
28,5
28,5
25,5
22,5
28,5
19,25
28,5
28,5
16,95
14,25
0
0
0
2,7
U
13,7
13,7
13,7
16,4
27,4
27,4
27,4
30,1
41,25
49,5
52,5
52,5
52,5
V
SI2
GI2
V
W
SI3
GI3
W
BRC+
NTC1
NTC2
INV+
INV+
Copyright Vincotech
27
30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Pinout
15;31;32
INV+
TI2
TI3
TI1
DI1
DI2
DI3
DB2
GI1
16
GI2
22
GI3
26
SI1
17
SI2
21
SI3
25
18;19
20;23
24;27
U
BRC+
28
V
W
TI6
TI5
TB
TI4
DB1
DI4
DI5
DI6
NTC
BRCG
2
GI4
14
GI5
10
GI6
6
SI4
13
SI5
9
SI6
5
NTC1
29
NTC2
30
BRCE
1
EI4
11;12
EI5
7;8
EI6
3;4
Identification
Component
Voltage
Current
Function
Comment
ID
TI4, TI1, TI5, TI2, TI6,
IGBT
1200 V
1200 V
35 A
Inverter Switch
Inverter Diode
TI3
DI1, DI4, DI2, DI5,
FWD
35 A
DI3, DI6
TB
IGBT
FWD
1200 V
1200 V
1200 V
35 A
15 A
7,5 A
Brake Switch
Brake Diode
DB2
DB1
FWD
Brake Sw. Protection Diode
Thermistor
NTC
Thermistor
Copyright Vincotech
28
30 Nov. 2021 / Revision 5
10-F1127PA035SC-L168E09
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Updated static characteristics of Brake Diode and Brake Sw.
Prot. Diode
10-F1127PA035SC-L168E09-D5-14
30 Nov. 2021
Thermistor changed
Updated thermal characteristics of Brake Diode
New datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
30 Nov. 2021 / Revision 5
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