10-FU073AA030SM-PF04H06 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FU073AA030SM-PF04H06 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总33页 (文件大小：8977K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FU073AA030SM-PF04H06
datasheet
flow3xANPFC 0
650 V / 30 A
Topology features
flow 0 12 mm housing
● 3ph Advanced Neutral PFC
Component features
● High efficiency in hard switching and resonant topologies
● High speed switching
● Low gate charge
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Schematic
Target applications
● Embedded Drives
● Heat Pumps
● HVAC
● Industrial Drives
Types
● 10-FU073AA030SM-PF04H06
Copyright Vincotech
1
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Negative Neutral Point Switch
VCES
Collector-emitter voltage
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
650
27
V
A
IC
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
90
A
Ptot
48
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Positive Neutral Point Switch
VCES
Collector-emitter voltage
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
650
27
V
A
IC
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
90
A
Ptot
48
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Negative Boost Diode
VRRM
Peak repetitive reverse voltage
600
38
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
60
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
330
45
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Positive Boost Diode
VRRM
Peak repetitive reverse voltage
600
38
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
60
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
330
45
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Negative Neutral Point Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1600
31
V
A
IF
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
37
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Positive Neutral Point Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1600
31
V
A
IF
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
37
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
3
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Positive Boost Diode Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
17
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
Positive Boost Blocking Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1600
31
V
A
IF
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
37
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
10,32
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Negative Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0003
30
25
3,3
4
4,7
V
V
25
1,67
1,8
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,84
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
None
1800
45
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
7
VCC = 520 V
15
30
70
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2
K/W
25
33,78
31,81
31,19
27,26
28,63
28,69
204,32
224,39
228,78
8,89
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
30
tf
125
150
25
8,68
ns
8,6
QrFWD=0,542 µC
QrFWD=1,52 µC
QrFWD=1,87 µC
0,686
1,07
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,18
0,255
0,317
0,347
Eoff
125
150
Copyright Vincotech
5
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Positive Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0003
30
25
3,3
4
4,7
V
V
25
1,67
1,8
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,84
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
None
1800
45
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
7
VCC = 520 V
15
30
70
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2
K/W
25
34
td(on)
Turn-on delay time
Rise time
125
150
25
31,12
30,91
34,57
35,51
35,19
646,93
699,36
712,09
85,64
92,53
95,4
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 64 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
30
tf
125
150
25
ns
QrFWD=0,516 µC
QrFWD=1,39 µC
QrFWD=1,7 µC
0,701
1,06
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,18
1,18
Eoff
125
150
1,2
1,24
Copyright Vincotech
6
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Negative Boost Diode
Static
25
1,39
1,2
2(1)
VF
IR
Forward voltage
30
125
150
V
1,14
Reverse leakage current
Vr = 600 V
25
20
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,12
K/W
Dynamic
25
22,37
34,7
IRM
Peak recovery current
125
150
25
A
39,77
45,85
70,4
trr
Reverse recovery time
125
150
25
ns
77,69
0,542
1,52
di/dt=1616 A/µs
di/dt=1406 A/µs
di/dt=1370 A/µs
Qr
Recovered charge
0/15
400
30
125
150
25
μC
1,87
0,069
0,234
0,298
620,75
1316,54
1333,69
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
7
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Positive Boost Diode
Static
25
1,39
1,2
2(1)
VF
IR
Forward voltage
30
125
150
V
1,14
Reverse leakage current
Vr = 600 V
25
20
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,12
K/W
Dynamic
25
20,13
32,83
37,54
44,55
67,28
74,54
0,516
1,39
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=1226 A/µs
di/dt=1138 A/µs
di/dt=1163 A/µs
Qr
Recovered charge
0/15
400
30
125
150
25
μC
1,7
0,068
0,21
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
0,264
702,76
1591,16
1552,43
(dirf/dt)max
125
150
Copyright Vincotech
8
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Negative Neutral Point Diode
Static
25
1,11
1,03
1,02
1,5(1)
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,87
K/W
Positive Neutral Point Diode
Static
25
1,11
1,03
1,02
1,5(1)
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,87
K/W
Copyright Vincotech
9
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Positive Boost Diode Protection Diode
Static
25
1,23
1,67
1,56
1,87(1)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,87
K/W
Positive Boost Blocking Diode
Static
25
1,11
1,03
1,02
1,5(1)
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,87
K/W
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Negative Neutral Point Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
80
80
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
60
40
20
0
60
40
20
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
30
10
25
20
15
10
5
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,997
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,14E-01
3,93E-01
1,10E+00
2,59E-01
1,35E-01
1,42E+00
1,82E-01
4,78E-02
5,78E-03
4,53E-04
Copyright Vincotech
11
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Negative Neutral Point Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
10
20
30
40
50
60
70
80
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
30
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Neutral Point Switch Characteristics
figure 7.
IGBT
figure 8.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
80
80
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
60
40
20
0
60
40
20
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 9.
IGBT
figure 10.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
30
10
25
20
15
10
5
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,997
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,14E-01
3,93E-01
1,10E+00
2,59E-01
1,35E-01
1,42E+00
1,82E-01
4,78E-02
5,78E-03
4,53E-04
Copyright Vincotech
13
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Neutral Point Switch Characteristics
figure 11.
IGBT
figure 12.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
10
20
30
40
50
60
70
80
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
30
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
14
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Negative Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
2,12
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,00E-01
3,45E-01
1,29E+00
2,38E-01
1,48E-01
1,94E+00
3,11E-01
7,10E-02
7,05E-03
8,81E-04
Copyright Vincotech
15
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
2,12
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,00E-01
3,45E-01
1,29E+00
2,38E-01
1,48E-01
1,94E+00
3,11E-01
7,10E-02
7,05E-03
8,81E-04
Copyright Vincotech
16
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Negative Neutral Point Diode Characteristics
figure 17.
Rectifier
figure 18.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,869
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,65E-02
1,70E-01
6,15E-01
6,94E-01
2,16E-01
1,19E-01
8,90E+00
1,08E+00
1,58E-01
5,21E-02
6,16E-03
1,06E-03
Copyright Vincotech
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11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Neutral Point Diode Characteristics
figure 19.
Rectifier
figure 20.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,869
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,65E-02
1,70E-01
6,15E-01
6,94E-01
2,16E-01
1,19E-01
8,90E+00
1,08E+00
1,58E-01
5,21E-02
6,16E-03
1,06E-03
Copyright Vincotech
18
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Boost Diode Protection Diode Characteristics
figure 21.
FWD
figure 22.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,873
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Copyright Vincotech
19
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Boost Blocking Diode Characteristics
figure 23.
Rectifier
figure 24.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,869
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,65E-02
1,70E-01
6,15E-01
6,94E-01
2,16E-01
1,19E-01
8,90E+00
1,08E+00
1,58E-01
5,21E-02
6,16E-03
1,06E-03
Copyright Vincotech
20
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Negative Neutral Point Switching Characteristics
figure 25.
IGBT
figure 26.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 27.
FWD
figure 28.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Negative Neutral Point Switching Characteristics
figure 29.
IGBT
figure 30.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
tf
-1
10
-1
10
td(on)
tr
tr
td(on)
tf
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
16
°C
V
150
400
0/15
30
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 31.
FWD
figure 32.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Negative Neutral Point Switching Characteristics
figure 33.
FWD
figure 34.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 35.
FWD
figure 36.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
60
50
40
30
20
10
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Negative Neutral Point Switching Characteristics
figure 37.
FWD
figure 38.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
2000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
dirr/dt ──────
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 39.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
70
IC MAX
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
16
Ω
Ω
Copyright Vincotech
24
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Neutral Point Switching Characteristics
figure 40.
IGBT
figure 41.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eon
0
10
20
30
40
50
60
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
64
figure 42.
FWD
figure 43.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
25
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Neutral Point Switching Characteristics
figure 44.
IGBT
figure 45.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
-1
10
tf
tr
tf
-1
10
tr
-2
10
td(on)
-2
10
-3
10
0
10
20
30
40
50
60
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
16
°C
V
150
400
0/15
30
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
64
figure 46.
FWD
figure 47.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
26
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Neutral Point Switching Characteristics
figure 48.
FWD
figure 49.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 50.
FWD
figure 51.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
27
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Positive Neutral Point Switching Characteristics
figure 52.
FWD
figure 53.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
2250
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
0
0
10
20
30
40
50
60
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 54.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
70
IC MAX
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
64
Ω
Ω
Copyright Vincotech
28
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Switching Definitions
figure 55.
IGBT
figure 56.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 57.
IGBT
figure 58.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Switching Definitions
figure 59.
FWD
figure 60.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
30
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FU073AA030SM-PF04H06
10-FU073AA030SM-PF04H06-/7/
10-FU073AA030SM-PF04H06-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
Ph1
33,8
29,25
29,25
16,9
16,9
12,3
4,55
4,55
0
0
2
3,3
6,3
3,3
6,3
0
G1
3
S1
4
G2
5
S2
6
Ph2
7
2,4
5,4
0
G3
8
S3
9
Ph3
10
11
12
13
14
15
16
17
18
19
20
21
0
22,7
22,7
18
DC-3
GND3
TM3
4,7
3,9
9,4
22,7
22,7
18,4
22,7
22,7
22,7
22,7
22,7
17,6
DC+23
DC+23
TM2
12,2
19,9
16,9
21,6
24,4
29,1
33,8
27,5
GND2
DC-12
DC-12
GND1
DC+1
TM1
Copyright Vincotech
31
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Pinout
DC+1
DC+23
13,14
20
D24
D51
D14
D34
D52
D42
D62
TM2
TM3
12
TM1
15
21
D41
D61
D54
D53
T23
D44
D43
T13
D64
D63
T33
GND2
GND1
GND3
16
19
11
T14
T24
T34
G1
S1
G2
S2
G3
S3
2
3
4
5
7
8
D23
D13
D33
1
Ph1
6
9
Ph2
Ph3
17,18
DC-12
10
DC-3
Identification
Component
Voltage
Current
Function
Comment
ID
T13, T23, T33
T14, T24, T34
D13, D23, D33
D14, D24, D34
D43, D53, D63
D44, D54, D64
IGBT
IGBT
650 V
650 V
600 V
600 V
1600 V
1600 V
30 A
30 A
30 A
30 A
18 A
18 A
Negative Neutral Point Switch
Positive Neutral Point Switch
Negative Boost Diode
FWD
FWD
Positive Boost Diode
Rectifier
Rectifier
Negative Neutral Point Diode
Positive Neutral Point Diode
Positive Boost Diode Protection
Diode
D42, D52, D62
D41, D51, D61
FWD
650 V
10 A
18 A
Rectifier
1600 V
Positive Boost Blocking Diode
Copyright Vincotech
32
11 Jul. 2022 / Revision 1
10-FU073AA030SM-PF04H06
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FU073AA030SM-PF04H06-D1-14
11 Jul. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
33
11 Jul. 2022 / Revision 1
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