10-FE12APA015SH01-PB18E08Z

datasheet

flow3xANPFC 1

1200 V / 15 A

Features

flow 1 12 mm housing

● 3xAdvanced Neutral Boost PFC

● Integrated DC capacitor

● Kelvin Emitter for improved switching performance

● Integrated sixpack with open emitter

● Built-in NTC

Schematic

Target applications

● Embedded Drives

● Heat Pumps

● HVAC

● Industrial Drives

Types

● 10-FE12APA015SH01-PB18E08Z

Copyright Vincotech

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04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Switch

V_CES

Collector-emitter voltage

1200

22

V

A

I_C

Collector current (DC current)

Repetitive peak collector current

Turn off safe operating area

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= 150°C, V_CE= 1200 V

T_j= T_jmax

45

A

60

A

P_tot

V_GES

t_SC

T_s= 80 °C

68

W

V

Gate-emitter voltage

±20

10

Short circuit ratings

V_GE= 15 V, V_CC= 800 V

T_j= 150 °C

µs

°C

T_jmax

Maximum junction temperature

175

Negative Neutral Point Switch

V_CES

Collector-emitter voltage

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

650

32

V

A

I_C

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

90

A

P_tot

68

W

V

V_GES

Gate-emitter voltage

±20

175

T_jmax

Maximum junction temperature

°C

Inverter Diode

V_RRM

Peak repetitive reverse voltage

1200

16

V

A

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 25 °C

T_s= 80 °C

I_FSM

I²t

65

A

Single Half Sine Wave,

t_p= 10 ms

21

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

43

T_jmax

Maximum junction temperature

175

Copyright Vincotech

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04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Positive Neutral Point Switch

V_CES

Collector-emitter voltage

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

650

32

V

A

I_C

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

90

A

P_tot

68

W

V

V_GES

Gate-emitter voltage

±20

175

T_jmax

Maximum junction temperature

°C

Negative Neutral Point Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

35

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

200

44

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Positive Neutral Point Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

35

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

200

44

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

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04 Nov. 2021 / Revision 1

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datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Positive Boost Diode

V_RRM

Peak repetitive reverse voltage

650

18

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

I²t

t_plimited by T_jmax

66

A

162

131

40

A

Single Half Sine Wave,

t_p= 10 ms

T_j= 25 °C

T_s= 80 °C

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

175

Positive Boost Blocking Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

35

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

200

44

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Positive Boost Diode Protection Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

650

16

V

A

I_F

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

12

A

P_tot

38

W

°C

T_jmax

Maximum junction temperature

175

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datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Negative Boost Diode

V_RRM

Peak repetitive reverse voltage

650

18

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

I²t

t_plimited by T_jmax

66

A

162

131

40

A

Single Half Sine Wave,

t_p= 10 ms

T_j= 25 °C

T_s= 80 °C

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

175

Capacitor (PFC)

V_MAX

Maximum DC voltage

630

V

T_op

Operation Temperature

-55 ... 150

°C

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

AC Voltage

t_p= 2 s

6000

2500

>12,7

8.67

V

t_p= 1 min

V

mm

Comparative Tracking Index

*100 % tested in production

CTI

≥ 600

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

V_CEsat

I_CES

I_GES

r_g

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

V_CE= V_GE

0,0005

15

25

5,3

5,8

6,3

V

25

1,78

1,91

2,29

2,42⁽¹⁾

15

0

V

150

1200

0

25

2

µA

nA

Ω

20

120

None

875

75

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 1 Mhz

0

25

Reverse transfer capacitance

Gate charge

45

V_CC= 960 V

15

75

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,39

K/W

25

51,49

51,17

51,35

23,33

24,69

24,94

142,18

193,22

205,43

56,92

95,01

106,08

0,741

1,08

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

R_gon= 16 Ω

R_goff= 16 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

±15

600

15

t_f

125

150

25

ns

Q_rFWD=0,677 µC

Q_rFWD=1,51 µC

Q_rFWD=1,84 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

mWs

1,2

0,615

1,01

E_off

125

150

1,12

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Negative Neutral Point Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,0003

30

25

3,3

4

4,7

V

25

1,7

1,93

2

2,22⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

650

0

25

40

µA

nA

Ω

20

120

None

1800

45

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 1 Mhz

0

25

Reverse transfer capacitance

Gate charge

9

V_CC= 520 V

15

30

65

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,39

K/W

25

130,15

129,32

129,05

32

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

32,05

31,88

101,63

121,36

126,1

1,47

R_gon= 16 Ω

R_goff= 16 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

±15

350

16

t_f

125

150

25

2,37

ns

2,59

Q_rFWD=0,04 µC

Q_rFWD=0,039 µC

Q_rFWD=0,04 µC

0,196

0,208

0,206

0,086

0,145

0,16

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

mWs

E_off

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

25

2,6

2,71⁽¹⁾

2,77⁽¹⁾

60

V_F

I_R

Forward voltage

15

V

150

25

2,65

Reverse leakage current

V_r= 1200 V

µA

150

900

2,2

1800

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

K/W

25

11,25

13,58

14,49

166,79

367,13

420,17

0,677

1,51

I_RRM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

ns

di/dt=589 A/µs

di/dt=568 A/µs

di/dt=588 A/µs

Q_r

Recovered charge

±15

600

15

125

150

25

μC

1,84

0,218

0,597

0,724

186,15

145,21

134,05

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

(di_rf/dt)_max

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Positive Neutral Point Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,0003

30

25

3,3

4

4,7

V

25

1,7

1,93

2

2,22⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

650

0

25

40

µA

nA

Ω

20

120

None

1800

45

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 1 Mhz

0

25

Reverse transfer capacitance

Gate charge

9

V_CC= 520 V

15

30

65

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,39

K/W

25

130,15

129,32

129,05

32

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

32,05

31,88

101,63

121,36

126,1

1,47

R_gon= 16 Ω

R_goff= 16 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

±15

350

16

t_f

125

150

25

2,37

ns

2,59

Q_rFWD=0,04 µC

Q_rFWD=0,039 µC

Q_rFWD=0,04 µC

0,196

0,208

0,206

0,086

0,145

0,16

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

mWs

E_off

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Negative Neutral Point Diode

Static

25

0,928

0,813

0,784

1,1⁽¹⁾

V_F

I_R

Forward voltage

5

125

150

25

V

100

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

1000

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,6

K/W

Positive Neutral Point Diode

Static

25

0,928

0,813

0,784

1,1⁽¹⁾

V_F

I_R

Forward voltage

5

125

150

25

V

100

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

1000

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,6

K/W

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Positive Boost Diode

Static

25

1,55

1,89

2

1,8⁽¹⁾

V_F

I_R

Forward voltage

16

125

150

V

Reverse leakage current

V_r= 650 V

25

18

95

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,38

K/W

Dynamic

25

4,16

3,84

I_RRM

Peak recovery current

125

150

25

A

3,85

18,07

19,68

20,15

0,04

t_rr

Reverse recovery time

125

150

25

ns

di/dt=746 A/µs

di/dt=734 A/µs

di/dt=757 A/µs

Q_r

Recovered charge

±15

350

16

125

150

25

0,039

0,04

3,772x10^-3

3,75x10^-3

3,974x10^-3

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

622,41

544,86

437,94

(di_rf/dt)_max

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Positive Boost Blocking Diode

Static

25

0,928

0,813

0,784

1,1⁽¹⁾

V_F

I_R

Forward voltage

5

125

150

25

V

100

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

1000

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,6

K/W

Positive Boost Diode Protection Diode

Static

25

1,23

1,72

1,58

1,54

1,87⁽¹⁾

V_F

I_R

Forward voltage

6

125

150

V

Reverse leakage current

Thermal

V_r= 650 V

25

0,1

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,53

K/W

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Negative Boost Diode

Static

25

1,55

1,89

2

1,8⁽¹⁾

V_F

I_R

Forward voltage

16

125

150

V

Reverse leakage current

V_r= 650 V

25

18

95

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,38

K/W

Dynamic

25

4,16

3,84

I_RRM

Peak recovery current

125

150

25

A

3,85

18,07

19,68

20,15

0,04

t_rr

Reverse recovery time

125

150

25

ns

di/dt=746 A/µs

di/dt=734 A/µs

di/dt=757 A/µs

Q_r

Recovered charge

±15

350

16

125

150

25

0,039

0,04

3,772x10^-3

3,75x10^-3

3,974x10^-3

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

622,41

544,86

437,94

(di_rf/dt)_max

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Capacitor (PFC)

Static

DC bias voltage =

0 V

C

Capacitance

Tolerance

25

33

nF

%

-5

5

Thermistor

Static

R

Δ_R/R

P

Rated resistance

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

25

22

kΩ

%

R₁₀₀= 1484 Ω

100

-5

5

mW

mW/K

K

d

25

1,5

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

K

Vincotech Thermistor Reference

I

(1)

Value at chip level

(2)

Only valid with pre-applied Vincotech thermal interface material.

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datasheet

Inverter Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

40

V_GE

:

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

30

20

10

30

20

10

0

1

2

3

4

5

6

7

8

1

2

3

4

5

6

7

8

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

250

150

μs

°C

25 °C

T_j:

V_GE

T_j=

V

150 °C

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

1

15,0

10

12,5

10,0

7,5

0

10

-1

10

5,0

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

2,5

-3

0,0

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

2,5

5,0

7,5

10,0

12,5

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

1,392

25 °C

T_j:

V_CE

=

150 °C

R_th(j-s)=

K/W

IGBT thermal model values

R (K/W)

τ (s)

9,77E-02

1,79E-01

8,34E-01

1,64E-01

1,17E-01

1,22E+00

2,08E-01

4,54E-02

4,89E-03

5,62E-04

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datasheet

Inverter Switch Characteristics

figure 5.

IGBT

Safe operating area

I_C= f(V_CE

)

100

10µs

10

1

100µs

1ms

10ms

0,1

0,01

100ms

DC

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

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datasheet

Negative Neutral Point Switch Characteristics

figure 6.

IGBT

figure 7.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

80

V_GE

:

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

60

40

20

0

60

40

20

0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

V_GE

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 8.

IGBT

figure 9.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

1

30

10

25

20

15

10

5

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

0

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

1

2

3

4

5

6

7

8

10

t_p(s)

V

_GE(V)

t_p

V_CE

=

250

10

μs

V

D =

t_p/ T

1,394

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

8,66E-02

1,95E-01

5,59E-01

3,47E-01

9,37E-02

1,12E-01

1,03E+00

1,93E-01

5,17E-02

9,99E-03

1,86E-03

2,95E-04

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datasheet

Negative Neutral Point Switch Characteristics

figure 10.

IGBT

figure 11.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

100

17,5

15,0

12,5

10,0

7,5

10

1

5,0

0,1

0,01

2,5

0,0

1

10

100

1000

10000

0

10

20

30

40

50

60

70

V

_CE(V)

Q_g(μC)

D =

I_C

=

single pulse

30

25

A

T_s=

T_j=

80

15

°C

V

°C

V_GE

=

T_j=

T_jmax

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datasheet

Inverter Diode Characteristics

figure 12.

FWD

figure 13.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0

1

2

3

4

5

6

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,196

25 °C

T_j:

150 °C

R_th(j-s)=

K/W

FWD thermal model values

R (K/W)

τ (s)

1,03E-01

3,30E-01

1,14E+00

3,82E-01

2,46E-01

1,73E+00

1,92E-01

4,08E-02

3,95E-03

6,95E-04

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datasheet

Positive Neutral Point Switch Characteristics

figure 14.

IGBT

figure 15.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

80

V_GE

:

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

60

40

20

0

60

40

20

0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

V_GE

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 16.

IGBT

figure 17.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

1

30

10

25

20

15

10

5

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

0

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

1

2

3

4

5

6

7

8

10

t_p(s)

V

_GE(V)

t_p

V_CE

=

250

10

μs

V

D =

t_p/ T

1,394

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

8,66E-02

1,95E-01

5,59E-01

3,47E-01

9,37E-02

1,12E-01

1,03E+00

1,93E-01

5,17E-02

9,99E-03

1,86E-03

2,95E-04

Copyright Vincotech

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datasheet

Positive Neutral Point Switch Characteristics

figure 18.

IGBT

figure 19.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

100

17,5

15,0

12,5

10,0

7,5

10

1

5,0

0,1

0,01

2,5

0,0

1

10

100

1000

10000

0

10

20

30

40

50

60

70

V

_CE(V)

Q_g(μC)

D =

I_C

=

single pulse

30

25

A

T_s=

T_j=

80

15

°C

V

°C

V_GE

=

T_j=

T_jmax

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datasheet

Negative Neutral Point Diode Characteristics

figure 20.

Rectifier

figure 21.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

-2

10

0,1

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,00

0,25

0,50

μs

0,75

1,00

1,25

1,50

1,75

10

V_F(V)

t_p(s)

t_p

=

250

D =

t_p/ T

1,595

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

5,74E-02

1,49E-01

9,92E-01

2,25E-01

1,72E-01

3,35E+00

4,41E-01

6,12E-02

1,48E-02

1,74E-03

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datasheet

Positive Neutral Point Diode Characteristics

figure 22.

Rectifier

figure 23.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

-2

10

0,1

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,00

0,25

0,50

μs

0,75

1,00

1,25

1,50

1,75

10

V_F(V)

t_p(s)

t_p

=

250

D =

t_p/ T

1,595

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

5,74E-02

1,49E-01

9,92E-01

2,25E-01

1,72E-01

3,35E+00

4,41E-01

6,12E-02

1,48E-02

1,74E-03

Copyright Vincotech

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datasheet

Positive Boost Diode Characteristics

figure 24.

FWD

figure 25.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,375

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

1,22E-01

3,54E-01

1,50E+00

3,30E-01

7,38E-02

1,87E+00

1,79E-01

4,00E-02

4,36E-03

7,61E-04

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datasheet

Positive Boost Blocking Diode Characteristics

figure 26.

Rectifier

figure 27.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

-2

10

0,1

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,00

0,25

0,50

μs

0,75

1,00

1,25

1,50

1,75

10

V_F(V)

t_p(s)

t_p

=

250

D =

t_p/ T

1,595

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

5,74E-02

1,49E-01

9,92E-01

2,25E-01

1,72E-01

3,35E+00

4,41E-01

6,12E-02

1,48E-02

1,74E-03

Copyright Vincotech

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datasheet

Positive Boost Diode Protection Diode Characteristics

figure 28.

FWD

figure 29.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

17,5

15,0

12,5

10,0

7,5

10

0

10

-1

10

0,5

0,2

0,1

5,0

0,05

0,02

0,01

0,005

0

2,5

-2

0,0

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,527

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

9,24E-02

1,75E-01

7,31E-01

7,14E-01

4,89E-01

3,27E-01

9,29E+00

3,21E-01

4,97E-02

1,16E-02

2,11E-03

3,78E-04

Copyright Vincotech

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datasheet

Negative Boost Diode Characteristics

figure 30.

FWD

figure 31.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,375

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

1,22E-01

3,54E-01

1,50E+00

3,30E-01

7,38E-02

1,87E+00

1,79E-01

4,00E-02

4,36E-03

7,61E-04

Copyright Vincotech

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datasheet

Thermistor Characteristics

figure 32.

Thermistor

Typical NTC characteristic as function of temperature

R_T= f(T)

25000

20000

15000

10000

5000

0

20

40

60

80

100

120

140

T(°C)

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datasheet

Inverter Switching Characteristics

figure 33.

IGBT

figure 34.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C)

E = f(R_g)

3,0

2,5

2,0

1,5

1,0

0,5

0,0

2,00

1,75

1,50

1,25

1,00

0,75

0,50

0,25

0,00

E_on

E_off

E_on

E_off

0

5

10

15

20

25

30

I_C(A)

0

10

20

30

40

50

60

70

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

A

125 °C

150 °C

T_j:

R_gon

R_goff

16

figure 35.

FWD

figure 36.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

1,0

0,8

0,6

0,4

0,2

0,0

0,8

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

E_rec

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

125 °C

150 °C

T_j:

V

A

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datasheet

Inverter Switching Characteristics

figure 37.

IGBT

figure 38.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(off)

t_d(on)

t_f

-1

10

t_d(on)

t_r

-1

10

t_r

-2

10

-3

10

-2

10

0

5

10

15

20

25

30

I_C(A)

0

10

20

30

40

50

60

70

R_g(Ω)

With an inductive load at

T_j=

150

600

±15

16

°C

V

150

600

±15

15

°C

V_CE

=

V_CE

=

V

A

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

16

figure 39.

FWD

figure 40.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn off gate resistor

t_rr= f(I_C)

t_rr= f(R_goff)

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

t_rr

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

125 °C

150 °C

T_j:

V

A

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datasheet

Inverter Switching Characteristics

figure 41.

FWD

figure 42.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of turn off gate resistor

Q_r= f(I_C)

Q_r= f(R_goff)

3,0

2,5

2,0

1,5

1,0

0,5

0,0

2,25

2,00

1,75

1,50

1,25

1,00

0,75

0,50

0,25

0,00

Q_r

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

A

125 °C

150 °C

T_j:

figure 43.

FWD

figure 44.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of turn off gate resistor

I_RM= f(I_C)

I_RM= f(R_goff)

15,0

12,5

10,0

7,5

20,0

17,5

15,0

12,5

10,0

7,5

I_RM

5,0

2,5

0,0

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

31

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Inverter Switching Characteristics

figure 45.

FWD

figure 46.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_goff)

700

800

700

600

500

400

300

200

100

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

600

500

400

300

200

100

0

5

10

15

20

25

30

I_C(A)

0

10

20

30

40

50

60

70

R

_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

A

125 °C

150 °C

T_j:

figure 47.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

35

I_{C MAX}

30

25

20

15

10

5

0

250

500

750

1000

1250

1500

V

_CE(V)

T_j=

At

150

°C

Ω

R_gon

R_goff

=

16

Ω

Copyright Vincotech

32

04 Nov. 2021 / Revision 1

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datasheet

Negative Neutral Point Switching Characteristics

figure 48.

IGBT

figure 49.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C)

E = f(R_g)

0,5

0,4

0,3

0,2

0,1

0,0

0,5

0,4

0,3

0,2

0,1

0,0

E_on

E_off

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

350

±15

16

V

125 °C

150 °C

350

±15

16

V

125 °C

150 °C

T_j:

V

A

R_gon

R_goff

Ω

16

figure 50.

FWD

figure 51.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

0,010

0,008

0,006

0,004

0,002

0,000

0,005

0,004

0,003

0,002

0,001

0,000

E_rec

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

Ω

125 °C

150 °C

350

±15

16

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

33

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Negative Neutral Point Switching Characteristics

figure 52.

IGBT

figure 53.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(on)

t_d(off)

t_d(on)

t_d(off)

-1

10

-2

10

-3

10

-4

10

t_r

-1

10

-2

10

-3

10

t_r

t_f

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

350

±15

16

°C

150

350

±15

16

°C

V_CE

=

V_CE

=

V

Ω

V

A

V_GE

R_gon

R_goff

V_GE

I_C

16

figure 54.

FWD

figure 55.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn off gate resistor

t_rr= f(I_C)

t_rr= f(R_goff)

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

0,040

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

t_rr

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

Ω

125 °C

150 °C

350

±15

16

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

34

04 Nov. 2021 / Revision 1

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datasheet

Negative Neutral Point Switching Characteristics

figure 56.

FWD

figure 57.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of turn off gate resistor

Q_r= f(I_C)

Q_r= f(R_goff)

0,07

0,06

0,05

0,04

0,03

0,02

0,01

0,00

0,06

0,05

0,04

0,03

0,02

0,01

0,00

Q_r

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

125 °C

150 °C

350

±15

16

V

A

125 °C

150 °C

T_j:

Ω

figure 58.

FWD

figure 59.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of turn off gate resistor

I_RM= f(I_C)

I_RM= f(R_goff)

5

4

3

2

1

0

5

4

3

2

1

0

I_RM

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

125 °C

150 °C

350

±15

16

V

125 °C

150 °C

T_j:

V

A

Ω

Copyright Vincotech

35

04 Nov. 2021 / Revision 1

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datasheet

Negative Neutral Point Switching Characteristics

figure 60.

FWD

figure 61.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_goff)

1500

1000

800

600

400

200

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

1250

1000

750

500

250

0

5

10

15

20

25

30

35

I_C(A)

0

10

20

30

40

50

60

70

R

_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

Ω

125 °C

150 °C

350

±15

16

V

A

125 °C

150 °C

T_j:

figure 62.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

70

I_{C MAX}

60

50

40

30

20

10

0

100

200

300

400

500

600

700

800

V

_CE(V)

T_j=

At

150

°C

R_gon

R_goff

=

16

Ω

Copyright Vincotech

36

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Positive Neutral Point Switching Characteristics

figure 63.

IGBT

figure 64.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C)

E = f(R_g)

0,5

0,4

0,3

0,2

0,1

0,0

0,5

0,4

0,3

0,2

0,1

0,0

E_on

E_off

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

350

±15

16

V

125 °C

150 °C

350

±15

16

V

125 °C

150 °C

T_j:

V

A

R_gon

R_goff

Ω

16

figure 65.

FWD

figure 66.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

0,010

0,008

0,006

0,004

0,002

0,000

0,005

0,004

0,003

0,002

0,001

0,000

E_rec

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

Ω

125 °C

150 °C

350

±15

16

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

37

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Positive Neutral Point Switching Characteristics

figure 67.

IGBT

figure 68.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(on)

t_d(off)

t_d(on)

t_d(off)

-1

10

-2

10

-3

10

-4

10

t_r

-1

10

-2

10

-3

10

t_r

t_f

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

350

±15

16

°C

150

350

±15

16

°C

V_CE

=

V_CE

=

V

Ω

V

A

V_GE

R_gon

R_goff

V_GE

I_C

16

figure 69.

FWD

figure 70.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn off gate resistor

t_rr= f(I_C)

t_rr= f(R_goff)

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

0,040

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

t_rr

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

Ω

125 °C

150 °C

350

±15

16

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

38

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Positive Neutral Point Switching Characteristics

figure 71.

FWD

figure 72.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of turn off gate resistor

Q_r= f(I_C)

Q_r= f(R_goff)

0,07

0,06

0,05

0,04

0,03

0,02

0,01

0,00

0,06

0,05

0,04

0,03

0,02

0,01

0,00

Q_r

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

125 °C

150 °C

350

±15

16

V

A

125 °C

150 °C

T_j:

Ω

figure 73.

FWD

figure 74.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of turn off gate resistor

I_RM= f(I_C)

I_RM= f(R_goff)

5

4

3

2

1

0

5

4

3

2

1

0

I_RM

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

70

I_C(A)

R_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

125 °C

150 °C

350

±15

16

V

125 °C

150 °C

T_j:

V

A

Ω

Copyright Vincotech

39

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Positive Neutral Point Switching Characteristics

figure 75.

FWD

figure 76.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_goff)

1500

1000

800

600

400

200

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

1250

1000

750

500

250

0

5

10

15

20

25

30

35

I_C(A)

0

10

20

30

40

50

60

70

R

_goff(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

16

V

Ω

125 °C

150 °C

350

±15

16

V

A

125 °C

150 °C

T_j:

figure 77.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

70

I_{C MAX}

60

50

40

30

20

10

0

100

200

300

400

500

600

700

800

V

_CE(V)

T_j=

At

150

°C

R_gon

R_goff

=

16

Ω

Copyright Vincotech

40

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Switching Definitions

figure 78.

IGBT

figure 79.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_tEoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

figure 80.

IGBT

figure 81.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

%

I_{C 90%}

I_C

I_{C 60%}

V_CE

I_{C 40%}

I_{C 90%}

t_r

I_C10%

V_CE

C 10%

t_f

t (µs)

Copyright Vincotech

41

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Switching Definitions

figure 82.

FWD

figure 83.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

%

t_Qr

t_rr

I_F

fitted

RRM 10%

V_F

RRM 90%

RRM 100%

t (µs)

Copyright Vincotech

42

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Ordering Code

Version

Ordering Code

Without thermal paste

10-FE12APA015SH01-PB18E08Z

10-FE12APA015SH01-PB18E08Z-/7/

10-FE12APA015SH01-PB18E08Z-/3/

With thermal paste (5,2 W/mK, PTM6000HV)

With thermal paste (3,4 W/mK, PSX-P7)

Marking

Name

Date code

UL & VIN

Lot

Serial

Text

NN-NNNNNNNNNNNNNN-

TTTTTTVV

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

Outline

Pin table [mm]

1

X

Y

0

Function

G15

0

3

2

DC-3

G13

3

6

4

9

DC-2

G11

5

12

15

28,9

6

DC-1

DC-

7

PFC23

DC-PFC1

Therm2

Therm1

GND1

GND23

DC+Inv

S3

8

41,1

46,4

52,8

30,4

27,7

10,4

17,9

20,9

26,35

29,05

37,15

37,5

46,2

45,7

52,8

34,95

26,35

0

9

0

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

0

8,6

8,35

13,55

16,7

13,65

16,65

13,95

16,95

16,7

23,3

24,05

25,8

28,8

25,8

28,8

25,8

28,8

G3

DC+PFC23

G2

S2

G1

S1

DC+PFC1

TM51

TM61

TM71

G16

0

Ph3

5,7

G14

5,7

Ph2

11,4

23,35

38,3

52,8

G12

Ph1

ACin3

ACin2

ACin1

Copyright Vincotech

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04 Nov. 2021 / Revision 1

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datasheet

Pinout

23

17,18

14

DC+PFC1

DC+PFC23

DC+Inv

D24

D51

D34

D61

D44

C12

C22

D52

D62

T12

T14

T16

D72

D11

D13

D15

TM51

24

TM61

25

TM71

26

G12

31

G14

29

G16

27

D71

D73

T43

D74

D54

T24

D53

T23

D64

T34

D63

Ph1

32

ACIn1

35

ACIn2

34

ACIn3

33

Ph2

30

Ph3

28

T33

T44

G1

21

G2

19

G3

16

C11

T11

T13

T15

S1

22

S2

20

C21

S3

15

D12

D14

D16

G11

5

G13

3

G15

1

D23

D33

D43

Rt

DC-PFC1

8

GND1

11

DC-PFC23

7

GND23

12,13

Therm1

10

Therm2

9

DC-1

6

DC-2

4

DC-3

2

Identification

Component

Voltage

Current

Function

Comment

ID

T23, T33, T43

T24, T34, T44

D53, D63, D73

D54, D64, D74

T11, T12, T13, T14,

T15, T16

IGBT

650 V

30 A

18 A

Negative Neutral Point Switch

Positive Neutral Point Switch

Negative Neutral Point Diode

Positive Neutral Point Diode

Rectifier

1600 V

IGBT

FWD

1200 V

15 A

Inverter Switch

Inverter Diode

D11, D12, D13, D14,

D15, D16

D24, D34, D44

D51, D61, D71

FWD

650 V

16 A

18 A

Positive Boost Diode

Positive Boost Blocking Diode

Positive Boost Diode Protection

Diode

Rectifier

1600 V

D52, D62, D72

FWD

650 V

6 A

D23, D33, D43

C11, C12, C21, C22

Rt

FWD

650 V

630 V

16 A

Negative Boost Diode

Capacitor (PFC)

Capacitor

Thermistor

Copyright Vincotech

44

04 Nov. 2021 / Revision 1

10-FE12APA015SH01-PB18E08Z

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 100

>SPQ

Standard

<SPQ

Sample

Handling instructions for flow 1 packages see vincotech.com website.

Package data

Package data for flow 1 packages see vincotech.com website.

Vincotech thermistor reference

See Vincotech thermistor reference table at vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

10-FE12APA015SH01-PB18E08Z-D1-14

4 Nov. 2021

Initial Release

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

45

04 Nov. 2021 / Revision 1


型号：	10-FE12APA015SH01-PB18E08Z
厂家：	VINCOTECH
描述：	Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
文件：	总45页 (文件大小：5419K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

10-FE12APA015SH01-PB18E08Z [VINCOTECH]

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