10-FU127PA008SC-L156E06 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
10-FU127PA008SC-L156E06
型号: 10-FU127PA008SC-L156E06
厂家: VINCOTECH    VINCOTECH
描述:

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

文件: 总19页 (文件大小:1560K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
10-FU127PA008SC-L156E06  
datasheet  
flow7PACK 0  
1200 V / 8 A  
Features  
flow 0 12mm housing  
● Compact flow 0 housing  
● Trench Fieldstop IGBT4 technology  
● Compact and low inductance layout  
● Built-in NTC  
Schematic  
Target applications  
● Motor Drives  
● Power Generation  
Types  
● 10-FU127PA008SC-L156E06  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter/Brake Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
1200  
16  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
24  
A
61  
W
V
±20  
175  
Maximum Junction Temperature  
°C  
Copyright Vincotech  
1
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter/Brake Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak Repetitive Reverse Voltage  
1200  
20  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
20  
A
Tj = Tjmax  
46  
W
°C  
Tjmax  
Maximum Junction Temperature  
175  
Brake Sw. Protection Diode  
VRRM  
Peak Repetitive Reverse Voltage  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
1200  
6
V
A
IF  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
Ptot  
6
A
Tj = Tjmax  
25  
W
°C  
Tjmax  
Maximum Junction Temperature  
150  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
Isolation voltage  
-40…(Tjmax - 25)  
Visol  
DC Test Voltage  
tp = 2 s  
4000  
min. 12,7  
9,1  
V
Creepage distance  
mm  
mm  
Clearance  
Comparative Tracking Index  
CTI  
> 200  
Copyright Vincotech  
2
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter/Brake Switch  
Static  
VGE(th)  
VCEsat  
ICES  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
VGE = VCE  
0,0005 25  
5,3  
5,8  
6,3  
V
V
25  
1,58  
1,85  
2,25  
2,07  
15  
0
8
150  
1200  
0
25  
25  
1
µA  
nA  
Ω
IGES  
rg  
20  
120  
none  
490  
30  
Cies  
Input capacitance  
f = 1 MHz  
0
25  
25  
pF  
Cres  
Reverse transfer capacitance  
Thermal  
phase-change  
material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
1,57  
K/W  
IGBT Switching  
25  
71  
71  
72  
td(on)  
125  
150  
25  
Turn-on delay time  
19  
Rgoff = 32 Ω  
Rgon = 32 Ω  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
23  
22  
ns  
194  
236  
250  
79  
108  
110  
0,499  
0,748  
0,796  
0,435  
0,624  
0,657  
td(off)  
Turn-off delay time  
Fall time  
±15  
600  
8
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 0,9 μC  
= 1,6 μC  
= 1,7 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
3
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter/Brake Diode  
Static  
25  
150  
1,77  
1,68  
2,05  
2,7  
VF  
Ir  
Forward voltage  
10  
V
Reverse leakage current  
1200  
25  
µA  
Thermal  
phase-change  
material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
2,07  
K/W  
FWD Switching  
25  
8
IRRM  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
10  
10  
Peak recovery current  
A
251  
383  
411  
0,885  
1,569  
1,721  
0,345  
0,635  
0,692  
84  
trr  
Qr  
Reverse recovery time  
ns  
di/dt = 452 A/μs  
di/dt = 399 A/μs  
di/dt = 403 A/μs  
±15  
600  
8
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
69  
64  
Brake Sw. Protection Diode  
Static  
25  
150  
1,65  
1,51  
1,6  
VF  
Ir  
Forward voltage  
3
V
Reverse leakage current  
1200  
25  
250  
µA  
Thermal  
phase-change  
material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
2,80  
K/W  
Copyright Vincotech  
4
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
21,5  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1486 Ω  
-4,5  
4,5  
210  
3,5  
mW  
mW/K  
K
B(25/50)  
3884  
3964  
B-value  
B(25/100)  
K
Vincotech NTC Reference  
F
Copyright Vincotech  
5
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter/Brake Switch Characteristics  
Typical output characteristics  
IGBT  
Typical output characteristics  
IGBT  
I C = f(VCE  
)
I C = f(VCE)  
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
Typical transfer characteristics  
IGBT  
Transient Thermal Impedance as function of Pulse duration  
IGBT  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,57  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
1,42E-01  
6,32E-01  
3,98E-01  
2,86E-01  
1,08E-01  
5,98E-01  
7,71E-02  
2,43E-02  
6,16E-03  
1,44E-03  
Copyright Vincotech  
6
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter/Brake Switch Characteristics  
Safe operating area  
IGBT  
I C = f(VCE  
)
I
I
I
I
At  
D =  
single pulse  
80  
Ts  
VGE  
Tj  
=
ºC  
=
±15  
V
=
Tjmax  
ºC  
Copyright Vincotech  
7
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter/Brake Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
D = 0,5  
0,2  
10-1  
0,1  
0,05  
0,02  
0,01  
0,005  
0,000  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
D =  
R th(j-s)  
tp  
=
250  
μs  
25 °C  
150 °C  
tp / T  
2,07  
T j:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
5,0880E-02  
1,5540E-01  
7,7510E-01  
5,3250E-01  
3,5430E-01  
1,9740E-01  
4,2620E+00  
5,0290E-01  
7,8890E-02  
2,6820E-02  
5,0280E-03  
9,0910E-04  
Copyright Vincotech  
8
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Brake Sw. Protection Diode Characteristics  
Typical forward characteristics  
FWD  
Transient thermal impedance as a function of pulse width  
FWD  
IF = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
D = 0,5  
0,2  
10-1  
0,1  
0,05  
0,02  
0,01  
0,005  
0.000  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
D =  
R th(j-s)  
tp  
=
250  
μs  
25 °C  
150 °C  
tp / T  
2,80  
T j:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
7,82E-02  
1,95E-01  
9,84E-01  
6,58E-01  
5,09E-01  
3,7090E-01  
2,45E+00  
2,65E-01  
4,77E-02  
1,23E-02  
2,70E-03  
5,9830E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Typical NTC characteristic  
Thermistor  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
9
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(rg)  
E = f(I C  
)
E
E
E
E
E E  
E E  
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
VCE  
VGE  
=
=
=
=
600  
±15  
32  
V
V
Ω
Ω
T
j:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
8
V
V
A
T j:  
R gon  
R goff  
32  
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(rg )  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
:
T j  
600  
±15  
32  
V
:
600  
±15  
8
V
V
A
VCE  
VGE  
=
=
=
T j  
VCE  
VGE  
I C  
=
=
=
V
R gon  
Ω
Copyright Vincotech  
10  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(r g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
600  
±15  
32  
°C  
V
150  
600  
±15  
8
°C  
V
Tj  
VCE  
=
=
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
=
VGE  
V
V
Ω
Ω
A
R gon  
R goff  
32  
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
600  
600  
±15  
32  
V
V
Ω
25 °C  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
:
:
Tj  
125 °C  
150 °C  
±15  
8
VGE  
R gon  
=
=
Tj  
VGE  
I C  
=
=
Copyright Vincotech  
11  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recoved charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
At  
VCE  
VGE  
R gon  
=
600  
±15  
32  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
600  
±15  
8
V
V
A
25 °C  
125 °C  
150 °C  
:
:
T j  
=
T j  
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I
I
I
I
I
I
600  
600  
±15  
32  
V
V
Ω
25 °C  
125 °C  
150 °C  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
:
:
T j  
±15  
8
VGE  
R gon  
=
=
T j  
VGE  
I C  
=
=
Copyright Vincotech  
12  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt,di rr/dt = f(I c)  
di F/dt,di rr/dt = f(R g)  
diF/dt  
d
iF  
/
/
d
d
t
t
t
t
t
t
t
t
t
i
i
i
i
dir r/dt  
dirr  
t
i
i
i
i
25 °C  
600  
±15  
32  
V
V
Ω
600  
±15  
8
V
V
A
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
:
125 °C  
150 °C  
VGE  
=
=
T j  
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
=
I C f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
175  
°C  
Ω
Tj  
=
=
=
32  
32  
R gon  
R goff  
Ω
Copyright Vincotech  
13  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter Switching Definitions  
General conditions  
=
=
=
125 °C  
32 Ω  
T j  
Rgon  
R goff  
32 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)  
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
IC  
tdoff  
VCE  
IC  
VCE  
VGE  
VGE  
tEoff  
tEon  
-15  
V
-15  
15  
V
VGE (0%) =  
VGE (0%) =  
15  
600  
8
V
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
600  
8
V
A
A
0,236  
0,490  
μs  
μs  
0,071  
0,275  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
VCE  
IC  
IC  
VCE  
tr  
tf  
600  
V
600  
8
V
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
8
A
A
0,108  
μs  
0,023  
μs  
tr  
=
Copyright Vincotech  
14  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter Switching Definitions  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Eoff  
Poff  
Eon  
tEoff  
tEon  
4,93  
0,62  
0,49  
kW  
mJ  
μs  
4,93  
0,75  
0,27  
kW  
mJ  
μs  
P off (100%) =  
Eoff (100%) =  
P on (100%) =  
Eon (100%) =  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Id  
Vd  
fitted  
600  
8
V
Vd (100%) =  
I d (100%) =  
A
I RRM (100%) =  
t rr  
-10  
A
0,383  
μs  
=
Copyright Vincotech  
15  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Inverter Switching Definitions  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr  
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
Id  
Qrr  
Erec  
tErec  
Prec  
I d (100%) =  
8
A
P rec (100%) =  
Erec (100%) =  
4,93  
0,63  
0,76  
kW  
Q rr (100%) =  
1,57  
0,76  
μC  
μs  
mJ  
μs  
t Qrr  
=
tErec =  
Copyright Vincotech  
16  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Ordering Code & Marking  
Version  
Ordering Code  
without thermal paste 12mm housing with solder pins  
10-FU127PA008SC-L156E06  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table [mm]  
Pin  
1
X
Y
22,5  
22,5  
19,5  
22,5  
19,5  
22,5  
19,5  
22,5  
11  
Function  
0
BRCE  
BRCG  
GI6  
2
3
3
13,5  
13,5  
23,5  
23,5  
33,5  
33,5  
33,5  
33,5  
33,5  
25  
4
EI6  
5
GI5  
6
EI5  
7
GI4  
8
EI4  
9
INV+  
GI1  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
3
0
U
3
GI2  
25  
0
V
16,5  
16,5  
3
3
GI3  
0
W
0
NTC1  
NTC2  
BRC+  
INV+  
0
0
7,9  
0
9,3  
11  
Copyright Vincotech  
17  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
TI1,TI2,TI3  
TI4,TI5,TI6  
IGBT  
1200 V  
8 A  
Inverter Switch  
Inverter Diode  
DI1,DI2,DI3  
DI4,DI5,DI6  
FWD  
1200 V  
10 A  
TB  
IGBT  
FWD  
1200 V  
1200 V  
1200 V  
8 A  
10 A  
3 A  
Brake Switch  
Brake diode  
DB2  
DB1  
NTC  
FWD  
Brake Sw. Protection Diode  
Thermistor  
Thermistor  
Copyright Vincotech  
18  
29 Aug. 2016 / Revision 1  
10-FU127PA008SC-L156E06  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ)  
135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-FU127PA008SC-L156E06-D1-14  
29 Aug. 2016  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
19  
29 Aug. 2016 / Revision 1  

相关型号:

10-FU127PA015SC-L158E06

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH

10-FU127PA025SC-L159E06

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH

10-FX062TA099FS-P980D57

Easy to use / drive;Extremly low losses;Very high commutation ruggedness
VINCOTECH

10-FX074PA075SM-L625F07

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FX12PNA005M7-P848C27

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-FY06NIA100SA-M135F08

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH

10-FY073AA030RG02-LK12L08

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FY073AA050RG01-LK14L08

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FY074PA100SM-L583F08

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FY074PA100SM01-L583F18

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FY07BIA050SM-M523E38

Ultra High-Speed IGBT and Diode
VINCOTECH

10-FY07BIA050SM-M523E38-3

Ultra High-Speed IGBT and Diode
VINCOTECH