10-FY07NBA225S502-M507L98 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-FY07NBA225S502-M507L98 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总19页 (文件大小：1127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07NBA225S502-M507L98
datasheet
flowBOOST 1 symmetric
650 V / 225 A
Features
flow 1 12 mm housing
● High efficient and compact symmetric booster
● High switching frequency and low inductive design
● Low losses with TRENCHSTOP™ 5 IGBT
● Integrated temperature sensor
Schematic
Target applications
● Power Supply
● Solar Inverters
Types
● 10-FY07NBA225S502-M507L98
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
147
675
197
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
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24 Jan. 2018 / Revision 1
10-FY07NBA225S502-M507L98
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
145
450
178
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
30
V
A
IF
IFRM
Ptot
60
A
Tj = Tjmax
Ts = 80 °C
53
W
°C
Tjmax
Maximum Junction Temperature
175
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
8,44
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00225 25
25
3,2
4
4,8
V
V
1,43
1,52
1,55
1,75
Collector-emitter saturation voltage
VCEsat
15
225
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
150
300
µA
nA
Ω
20
none
13500
390
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
51
15
520
225
492
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,48
K/W
Dynamic
25
43
42
43
td(on)
125
150
25
Turn-on delay time
40
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
39
40
178
198
203
29
Rgoff = 2 Ω
Rgon = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
15/0
350
226
tf
33
40
3,357
3,931
3,864
3,402
4,373
4,868
Qr
FWD
Qr
FWD
Qr
FWD
= 5 μC
= 10,9 μC
= 12,9 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
225
1,53
1,49
1,92
11,4
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
650
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,53
K/W
Dynamic
25
110
178
194
IRRM
Peak recovery current
125
150
25
A
65
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
91
103
ns
di/dt = 4532 A/μs
di/dt = 5576 A/μs 15/0
di/dt = 5500 A/μs
5,047
10,868
12,852
1,109
2,571
3,270
4953
4124
3409
350
226
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Boost Sw. Protection Diode
Static
25
1,64
1,56
1,87
0,36
VF
Ir
Forward voltage
Reverse leakage current
Thermal
30
V
150
650
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,80
K/W
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,48
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
7,81E-02
1,59E-01
1,84E-01
4,95E-02
1,20E-02
1,39E+00
2,02E-01
6,55E-02
8,05E-03
9,13E-04
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
Ts
=
80
ºC
VGE
=
±15
Tjmax
V
Tj =
Copyright Vincotech
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24 Jan. 2018 / Revision 1
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datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,53
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
2,95E-02
6,80E-02
1,21E-01
1,90E-01
7,57E-02
1,82E-02
3,27E-02
6,11E+00
1,06E+00
1,89E-01
5,96E-02
1,12E-02
2,22E-03
2,71E-04
Copyright Vincotech
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24 Jan. 2018 / Revision 1
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datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
150 °C
tp / T
1,80
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,88E-02
1,26E-01
5,91E-01
5,13E-01
2,57E-01
1,01E-01
5,09E+00
6,40E-01
8,94E-02
2,64E-02
6,46E-03
1,53E-03
Copyright Vincotech
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24 Jan. 2018 / Revision 1
10-FY07NBA225S502-M507L98
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
10
24 Jan. 2018 / Revision 1
10-FY07NBA225S502-M507L98
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
15/0
2
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
350
15/0
226
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
15/0
2
V
V
Ω
:
350
15/0
226
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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24 Jan. 2018 / Revision 1
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datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
15/0
2
°C
V
150
350
15/0
226
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
15/0
2
:
VGE
I C
=
15/0
226
:
Tj
VGE
R gon
=
=
Tj
=
Copyright Vincotech
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24 Jan. 2018 / Revision 1
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datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
15/0
2
V
V
Ω
25 °C
125 °C
150 °C
350
15/0
226
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
350
15/0
2
V
V
Ω
25 °C
125 °C
150 °C
350
15/0
226
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
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24 Jan. 2018 / Revision 1
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datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
15/0
226
V
V
A
25 °C
15/0
2
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
175
°C
Ω
2
2
R gon
R goff
Ω
Copyright Vincotech
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datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
T j
Rgon
R goff
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
226
198
V
350
226
42
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
226
33
V
VC (100%) =
I C (100%) =
350
226
39
V
A
A
ns
tr
=
ns
Copyright Vincotech
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24 Jan. 2018 / Revision 1
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datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
fitted
IF
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
226
178
91
V
I F (100%) =
Q r (100%) =
226
A
A
10,87
μC
A
ns
t rr
=
Copyright Vincotech
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24 Jan. 2018 / Revision 1
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datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 12 mm housing with solder pins
10-FY07NBA225S502-M507L98
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
0
Y
Function
N2
2,8
2
0
5,4
N2
N2
3
0
8
4
0
10,6
17,6
20,2
22,8
25,4
28,2
28,2
N2
5
0
N1
6
0
N1
7
0
N1
8
0
N1
9
16,6
19,2
DC-Boost
DC-Boost
10
11
12
13
21,8
24,4
44,2
28,2
28,2
28,2
DC-Boost
DC-Boost
Therm1
14
15
16
17
18
19
20
21
22
52,2
49,6
52,2
49,6
52,2
49,6
52,2
49,6
52,2
28,2
20,5
20,5
17,9
17,9
10,4
10,4
7,8
Therm2
Boost-
Boost-
Boost-
Boost-
Boost+
Boost+
Boost+
Boost+
7,8
23
24
25
26
27
28
29
30
24,4
21,8
19,2
16,6
21,8
21,8
8,4
0
0
DC+Boost
DC+Boost
DC+Boost
DC+Boost
S25
0
0
18,3
15,5
12,7
9,9
G25
G27
S27
8,4
Copyright Vincotech
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datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
Current
Function
Comment
T25, T27
D25, D27
225 A
225 A
30 A
Boost Switch
Boost Diode
FWD
650 V
D45, D47
Rt
FWD
NTC
650 V
Boost Sw. Protection Diode
Thermistor
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY07NBA225S502-M507L98-D1-14
24 Jan. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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24 Jan. 2018 / Revision 1
相关型号：
10-FY07NIA100S503-M515F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-FY07NIA150S5-M516F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-FY07NIA150S502-L365F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-FY07NIB080SM03-L095F03
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FY07NIB200RG-LH46F68
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FY07NIB200S504-LH46F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-FY07NMA150S5-M824F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-FY07NPA150SM01-L364F08
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FY07NPA150SM02-L365F08
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FY07NPA200SM02-L366F08
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FY07ZAA055F7-L513B78
Extremly low losses;Improved reverse diode commutation ruggedness;Ultra-fast body diode
VINCOTECH
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