10-FY07NBA150S5-M506L98 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-FY07NBA150S5-M506L98 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总19页 (文件大小：1460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10ꢀFY07NBA150S5ꢀM506L98
datasheet
flowBOOST 1 symmetric
650 V / 150 A
Features
flow 1 12mm housing
● High efficient and compact symmetric booster
● High switching frequency and low inductive design
● Low losses with TRENCHSTOP™ 5 IGBT
● Integrated temperature sensor
Schematic
Target applications
● Solar Inverters
Types
● 10ꢀFY07NBA150S5ꢀM506L98
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collectorꢀemitter voltage
650
104
450
145
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gateꢀemitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
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30 Jun. 2017 / Revision 1
10ꢀFY07NBA150S5ꢀM506L98
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
101
300
127
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum Junction Temperature
Boost Sw. Protection Diode
VRRM
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
33
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
60
A
Tj = Tjmax
53
W
°C
Tjmax
Maximum Junction Temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
ꢀ40…(Tjmax ꢀ 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
8,44
mm
mm
Clearance
Comparative Tracking Index
* 100 % Tested in production
CTI
> 200
Copyright Vincotech
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10ꢀFY07NBA150S5ꢀM506L98
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gateꢀemitter threshold voltage
VGE = VCE
0,0015 25
25
3,2
4
4,8
V
V
1,43
1,52
1,55
1,75
Collectorꢀemitter saturation voltage
VCEsat
15
150
125
150
ICES
IGES
rg
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
100
200
µA
nA
ꢁ
20
none
9000
260
34
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
150
328
nC
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,65
K/W
Dynamic
25
32
30
30
td(on)
125
150
25
Turnꢀon delay time
12
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
14
14
154
179
185
14
Rgoff = 2 ꢁ
Rgon = 2 ꢁ
ns
td(off)
Turnꢀoff delay time
Fall time
15/0
350
90
tf
21
29
0,630
1,003
1,088
1,053
1,604
1,782
Qr
FWD
Qr
FWD
Qr
FWD
= 3,7 ꢂC
= 7,1 ꢂC
= 8,1 ꢂC
Eon
Turnꢀon energy (per pulse)
Turnꢀoff energy (per pulse)
mWs
Eoff
125
150
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10ꢀFY07NBA150S5ꢀM506L98
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1,56
1,50
1,48
1,92
7,6
VF
Ir
125
150
Forward voltage
150
V
Reverse leakage current
650
25
µA
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,75
K/W
Dynamic
25
111
150
160
IRRM
125
150
25
Peak recovery current
A
50
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
80
89
ns
di/dt = 7886 A/ꢂs
di/dt = 6335 A/ꢂs 15/0
di/dt = 6414 A/ꢂs
3,730
7,100
8,077
0,950
1,844
2,103
2916
2211
2185
350
90
Recovered charge
ꢂC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Boost Sw. Protection Diode
Static
25
150
1,64
1,56
1,87
0,36
VF
Ir
Forward voltage
30
V
Reverse leakage current
650
25
µA
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,80
K/W
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kꢁ
%
Deviation of R100
Power dissipation
Power dissipation constant
Bꢀvalue
R100 = 1484 ꢁ
ꢀ5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
Bꢀvalue
K
Vincotech NTC Reference
I
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
tp
=
250
15
ꢂs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
ꢂs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10ꢀ1
10ꢀ2
10ꢀ5
10ꢀ4
10ꢀ3
10ꢀ2
10ꢀ1
100
101
tp(s)
tp
=
100
10
ꢂs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,65
VCE
=
Tj:
=
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
1,13Eꢀ01
2,91Eꢀ01
1,38Eꢀ01
6,68Eꢀ02
1,32Eꢀ02
3,21Eꢀ02
8,46Eꢀ01
1,23Eꢀ01
3,33Eꢀ02
8,32Eꢀ03
2,63Eꢀ03
3,23Eꢀ04
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10ꢀFY07NBA150S5ꢀM506L98
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
A
D =
single pulse
80 ºC
IC=
150
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
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datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10ꢀ1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
D =
R th(j-s)
tp
=
250
ꢂs
25 °C
125 °C
150 °C
tp / T
0,75
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
7,4550E+00
2,8760E-02
7,0150E-02
1,9490E-01
2,6490E-01
1,2130E-01
3,3930E-02
1,2730E+00
2,0350E-01
6,3300E-02
1,2650E-02
3,0470E-03
Copyright Vincotech
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10ꢀFY07NBA150S5ꢀM506L98
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10ꢀ1
0,1
0,05
0,02
0,01
0,005
0,000
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
D =
R th(j-s)
tp
=
250
ꢂs
25 °C
150 °C
tp / T
1,80
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,88Eꢀ02
1,26Eꢀ01
5,91Eꢀ01
5,13Eꢀ01
2,57Eꢀ01
1,01Eꢀ01
5,09E+00
6,40Eꢀ01
8,94Eꢀ02
2,64Eꢀ02
6,46Eꢀ03
1,53Eꢀ03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
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10ꢀFY07NBA150S5ꢀM506L98
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
15/0
2
V
V
ꢁ
ꢁ
T
j
:
VCE
VGE
I C
=
=
=
350
15/0
90
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
15/0
2
V
V
ꢁ
:
350
15/0
90
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
10
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10ꢀFY07NBA150S5ꢀM506L98
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
15/0
2
°C
V
150
350
15/0
90
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
ꢁ
ꢁ
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
350
15/0
2
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
:
Tj
15/0
90
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
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10ꢀFY07NBA150S5ꢀM506L98
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
15/0
2
V
V
ꢁ
25 °C
125 °C
150 °C
350
15/0
90
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
350
15/0
2
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
350
15/0
90
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF
/
dt
diF
/
dt
t
t
t
t
t
t
t
t
i
i
i
i
dir r
/
dt
dirr/d
t
i
i
i
i
At
VCE
=
350
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
15/0
90
V
V
A
25 °C
125 °C
150 °C
15/0
2
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
ꢁ
R gon
R goff
=
=
2
2
ꢁ
Copyright Vincotech
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datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
2 ꢁ
T j
Rgon
R goff
2 ꢁ
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turnꢀon Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VCE
tEoff
VGE
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
91
V
350
91
V
A
A
0,179
0,262
ꢂs
ꢂs
0,030
0,103
ꢂs
ꢂs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of tf
Turnꢀon Switching Waveforms & definition of tr
IC
VCE
tr
VCE
IC
tf
350
91
V
350
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
91
A
0,021
µs
0,014
µs
tr
=
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of tEoff
Turnꢀon Switching Waveforms & definition of tEon
Poff
Eon
Eoff
Pon
tEoff
tEon
P off (100%) =
Eoff (100%) =
31,79
1,60
0,26
kW
mJ
ꢂs
P on (100%) =
Eon (100%) =
31,79
1,00
0,10
kW
mJ
ꢂs
t Eoff
=
tEon =
figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
350
V
91
A
ꢀ150
0,080
A
ꢂs
t rr
=
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turnꢀon Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turnꢀon Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec
)
IF
Qr
Erec
tErec
Prec
91
A
31,79
1,84
0,16
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
7,10
0,16
ꢂC
ꢂs
mJ
ꢂs
t Qr
=
tErec =
Copyright Vincotech
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10ꢀFY07NBA150S5ꢀM506L98
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with solder pins
with thermal paste 12mm housing with solder pins
Ordering Code
10ꢀFY07NBA150S5ꢀM506L98
10ꢀFY07NBA150S5ꢀM506L98ꢀ/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NNꢀNNNNNNNNNNNNNNꢀTTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
Function
GND+
GND+
GND+
GND+
GNDꢀ
GNDꢀ
GNDꢀ
GNDꢀ
DCꢀ
0
2,8
2
0
5,4
3
0
8
4
0
10,6
17,6
20,2
22,8
25,4
28,2
28,2
28,2
28,2
28,2
28,2
20,5
20,5
17,9
17,9
10,4
10,4
7,8
5
0
6
0
7
0
8
0
9
16,6
19,2
21,8
24,4
44,2
52,2
49,6
52,2
49,6
52,2
49,6
52,2
49,6
52,2
24,4
21,8
19,2
16,6
21,8
21,8
8,4
8,4
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
DCꢀ
DCꢀ
DCꢀ
NTC1
NTC2
Bꢀ
Bꢀ
Bꢀ
Bꢀ
B+
B+
B+
B+
DC+
DC+
DC+
DC+
E2
7,8
0
0
0
0
18,3
15,5
12,7
9,9
G2
G1
E1
Copyright Vincotech
17
30 Jun. 2017 / Revision 1
10ꢀFY07NBA150S5ꢀM506L98
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
Current
Function
Comment
T1 , T2
D3 , D4
D1 , D2
NTC
150 A
150 A
30 A
Boost Switch
Boost Diode
FWD
650 V
FWD
650 V
Boost Sw. Protection Diode
Thermistor
Thermistor
Copyright Vincotech
18
30 Jun. 2017 / Revision 1
10ꢀFY07NBA150S5ꢀM506L98
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10ꢀFY07NBA150S5ꢀM506L98ꢀD1ꢀ14
30 Jun. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
19
30 Jun. 2017 / Revision 1
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