10-FY07NPA200SM02-L366F08 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FY07NPA200SM02-L366F08 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总30页 (文件大小：1591K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
flowNPC 1
1200 V / 200 A
Features
flow 1 12 mm housing
● NPC inverter topology
● Optimized for full rated bi-directional usage (4 quadrant
● High-speed IGBT in all switch positions
● Integrated NTC
● Low inductive design with integrated DC capacitor
● flow 1 12mm package
solder pin
press-fit pin
Schematic
Target applications
● Industrial Drives
● Solar Inverters
● UPS
Types
● 10-FY07NPA200SM02-L366F08
● 10-PY07NPA200SM02-L366F08Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
94
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
600
145
±20
175
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
1
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
107
400
131
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Out. Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
94
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
600
145
±20
175
A
W
V
Maximum junction temperature
°C
Out. Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
107
400
131
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Out. Boost Inverse Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
124
400
164
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
DC Link Capacitor
VMAX
Top
Maximum DC voltage
500
V
Operation Temperature
-55…+125
°C
Copyright Vincotech
2
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
8,07 \ 7,86
> 200
mm
mm
Clearance
solder pin \ press-fit pin
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,002
200
25
3,2
4
4,8
2,1
V
V
25
1,69
1,86
1,96
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
200
µA
nA
Ω
20
none
13120
194
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
42
15
520
200
420
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,65
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
67
66
11
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
12
Rgon = 4 Ω
Rgoff = 4 Ω
ns
158
174
7
Turn-off delay time
Fall time
-5 / 15
350
120
9
1,101
1,637
0,576
0,922
Qr
Qr
= 4,6 μC
= 9,1 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
4
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,65
1,60
1,58
2,65
10,6
VF
IR
125
150
Forward voltage
200
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,73
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
114
160
59
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
91
di/dt = 9293 A/μs
di/dt = 7591 A/μs
4,639
9,105
0,966
1,930
3621
2111
-5 / 15
350
120
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
5
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Out. Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,002
200
25
3,2
4
4,8
2,1
V
V
25
1,69
1,86
1,96
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
200
µA
nA
Ω
20
none
13120
194
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
42
15
520
200
420
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,65
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
76
62
12
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
14
Rgon = 4 Ω
Rgoff = 4 Ω
ns
153
171
7
Turn-off delay time
Fall time
-5 / 15
350
120
12
1,709
2,573
0,542
1,009
Qr
Qr
= 4,5 μC
= 9,2 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
6
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Out. Boost Diode
Static
25
1,65
1,60
1,58
2,65
10,6
VF
IR
125
150
Forward voltage
200
V
Reverse leakage current
650
350
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,73
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
91
129
70
103
4,495
9,160
0,800
1,676
2015
1571
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
di/dt = 6472 A/μs
di/dt = 5169 A/μs
-5 / 15
120
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Out. Boost Inverse Diode
Static
25
1,77
1,69
1,66
1,95
2,4
VF
IR
125
150
Forward voltage
200
V
Reverse leakage current
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,58
300
K/W
DC Link Capacitor
Capacitance
C
nF
%
%
Tolerance
-10
+10
2,5
Dissipation factor
f = 1 kHz
25
Copyright Vincotech
7
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
8
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
600
)
VCE
= f(
)
VCE
I C
I C
600
VGE
:
7 V
I
I
I
I
I
I
I
I
8 V
500
400
300
200
100
0
9 V
500
400
300
200
100
10
11 V
12 V
13 V
14 V
15 V
16
17 V
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
Tj
°C
from
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
= f(
200
)
VGE
= f( )
Z th(j-s) tp
I C
100
I
I
I
I
Z
Z
Z
Z
150
100
50
10-1
10-2
10-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
VG E (V)
=
100
0
μs
V
25 °C
125 °C
150 °C
=
D
tp
tp / T
=
:
Tj
=
R th(j-s)
0,65
K/W
VCE
IGBT thermal model values
R (K/W)
τ (s)
7,51E-02
1,27E-01
3,27E-01
7,19E-02
3,44E-02
1,81E-02
3,22E+00
5,51E-01
1,11E-01
2,69E-02
6,17E-03
5,82E-04
Copyright Vincotech
9
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE
)
15
1000
130 V
V
V
V
V
I I
I I
520 V
12,5
10
7,5
5
100
10
1
0,1
2,5
0
0,01
0
100
200
300
400
500
1
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
=
200
A
I C
Ts
=
=
±15
V
VGE
=
Tj
Tjmax
Copyright Vincotech
10
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
600
)
= f( )
tp
I F
VF
Z th(j-s)
100
500
400
300
200
100
0
Z
Z
Z
Z
10-1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,73
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,64E-02
1,38E-01
3,34E-01
1,06E-01
4,34E-02
1,90E-02
3,05E+00
6,75E-01
1,25E-01
3,99E-02
6,89E-03
7,34E-04
Copyright Vincotech
11
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
600
)
VCE
= f(
)
VCE
I C
I C
600
VGE
:
7 V
I
I
I
I
I
I
I
I
8 V
500
400
300
200
100
0
9 V
500
400
300
200
100
10
11 V
12 V
13 V
14 V
15 V
16
17 V
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
Tj
°C
from
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
= f(
200
)
VGE
= f( )
Z th(j-s) tp
I C
100
I
I
I
I
Z
Z
Z
Z
150
100
50
10-1
10-2
10-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
VG E (V)
=
100
0
μs
V
25 °C
125 °C
150 °C
=
D
tp
tp / T
=
:
Tj
=
R th(j-s)
0,65
K/W
VCE
IGBT thermal model values
R (K/W)
τ (s)
7,51E-02
1,27E-01
3,27E-01
7,19E-02
3,44E-02
1,81E-02
3,22E+00
5,51E-01
1,11E-01
2,69E-02
6,17E-03
5,82E-04
Copyright Vincotech
12
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE
)
15
1000
130 V
V
V
V
V
I I
I I
520 V
12,5
10
7,5
5
100
10
1
0,1
2,5
0
0,01
0
100
200
300
400
500
1
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
=
200
A
I C
Ts
=
=
±15
V
VGE
Tj =
Tjmax
Copyright Vincotech
13
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
600
)
= f( )
tp
I F
VF
Z th(j-s)
100
500
400
300
200
100
0
Z
Z
Z
Z
10-1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,73
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,64E-02
1,38E-01
3,34E-01
1,06E-01
4,34E-02
1,90E-02
3,05E+00
6,75E-01
1,25E-01
3,99E-02
6,89E-03
7,34E-04
Copyright Vincotech
14
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Inverse Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
600
)
= f( )
tp
I F
VF
Z th(j-s)
100
500
400
300
200
100
0
Z
Z
Z
Z
10-1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,58
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,80E-02
8,03E-02
1,46E-01
2,11E-01
6,77E-02
1,80E-02
8,20E+00
1,08E+00
1,95E-01
6,41E-02
1,10E-02
2,03E-03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
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19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
2
5
E
E
E
E
E
E
E
E
Eon
Eon
Eon
4
3
2
1
0
1,5
Eon
Eoff
1
Eoff
Eoff
Eoff
0,5
0
0
40
80
120
160
IC (A)
0
5
10
15
20
Rg (Ω)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
350
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
-5 / 15
R gon
R goff
4
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
2,5
2,5
E
E
E
E
E
E
E
E
Erec
2
1,5
1
2
1,5
1
Erec
Erec
Erec
0,5
0
0,5
0
0
5
10
15
20
0
40
80
120
160
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
125 °C
125 °C
R gon
Copyright Vincotech
16
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
t
t
t
t
t
t
td(off)
td(on)
td(off)
td(on)
0,1
0,1
tr
tr
tf
0,01
0,01
tf
0,001
0,001
0
5
10
15
20
0
40
80
120
160
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
125
350
-5 / 15
4
°C
V
Tj =
125
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
120
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,12
0,16
t
t
t
t
t
t
t
t
trr
trr
0,09
0,06
0,03
0
0,12
0,08
0,04
0
trr
trr
0
40
80
120
160
0
5
10
15
20
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
VGE
R gon
Copyright Vincotech
17
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
12
12
Q
Q
Q
Q
Q
Q
Q
Q
Qr
9
6
3
0
9
6
3
0
Qr
Qr
Qr
0
40
80
120
160
0
5
10
15
20
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE=
VGE =
I C=
350
-5 / 15
120
V
V
A
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
200
250
I
I
I I
I I
I
I
IRM
160
120
80
200
150
100
50
IRM
IRM
IRM
40
0
0
0
5
10
15
20
Rgo n (Ω)
0
40
80
120
160
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
R gon
Copyright Vincotech
18
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
20000
12000
d
iF/d
t
t
d
iF/d
t
t
t
t
t
d
i
r r/d
dirr/d
t
t
t
t
t
i
i
i
i
i
i
i
i
16000
12000
8000
4000
0
9000
6000
3000
0
0
5
10
15
20
Rgon (Ω)
0
40
80
120
160
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE =
VGE =
I C=
350
-5 / 15
120
V
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
450
IC MAX
I
I
I
I
400
350
300
250
200
150
100
50
I
I
I
I
I
I
I
I
V
V
V
V
0
0
100
200
300
400
500
600
700
C E (V)
V
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
19
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
T j
125 °C
4 Ω
4 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-5
V
VGE (0%) =
-5
15
V
V
V
GE (100%) =
C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
350
120
174
V
350
120
66
V
I
C (100%) =
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
C (100%) =
tf
350
120
9
V
VC (100%) =
I C (100%) =
350
120
12
V
I
A
A
=
ns
tr
=
ns
Copyright Vincotech
20
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
VF (100%) =
350
120
160
91
V
I F (100%) =
Q r (100%) =
120
A
I
I
F (100%) =
A
9,11
μC
RRM (100%) =
A
trr
=
ns
Copyright Vincotech
21
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g
)
E = f(I C
)
3
6
5
4
3
2
1
0
Eon
Eon
E
E
E
E
E
E
E
E
2,5
Eon
2
Eon
1,5
1
Eoff
Eoff
Eoff
Eoff
0,5
0
0
40
80
120
160
IC (A)
0
4
8
12
16
20
R
g (Ω)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
350
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
125 °C
-5 / 15
R gon
R goff
4
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c
)
Erec = f(R g)
2,5
2
2
E
E
E
E
E
E
E
E
Erec
1,5
1,5
1
1
Erec
Erec
0,5
Erec
0,5
0
0
0
4
8
12
16
20
0
40
80
120
160
IC (A)
R
g (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
125 °C
125 °C
R gon
Copyright Vincotech
22
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
t
t
t
t
t
t
td(off)
td(on)
td(off)
0,1
0,1
td(on)
tr
tr
tf
0,01
0,01
tf
0,001
0,001
0
4
8
12
16
20
0
40
80
120
160
R
g (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
125
350
-5 / 15
4
°C
V
Tj =
125
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
120
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,12
0,16
t
t
t
t
t
t
t
trr
t
trr
0,09
0,06
0,03
0
0,12
0,08
0,04
0
trr
trr
0
40
80
120
160
0
4
8
12
16
20
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
125 °C
VGE
R gon
Copyright Vincotech
23
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
12
12
Q
Q
Q
Q
Q
Q
Q
Q
Qr
9
6
3
0
9
6
3
0
Qr
Qr
Qr
0
40
80
120
160
0
4
8
12
16
20
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE=
VGE =
I C=
350
-5 / 15
120
V
V
A
125 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
160
200
I
I
I I
I I
I
I
IRM
160
120
80
40
0
120
80
40
0
IRM
IRM
IRM
0
4
8
12
16
20
Rgo n (Ω)
0
40
80
120
160
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
125 °C
R gon
Copyright Vincotech
24
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
15000
10000
diF/dt
d
iF
/
/
dt
dt
t
t
t
t
dir r/dt
t
t
t
t
dirr
i
i
i
i
i
i
i
i
12000
9000
6000
3000
0
8000
6000
4000
2000
0
0
4
8
12
16
20
gon (Ω)
0
40
80
120
160
R
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
VCE =
VGE =
I C=
350
-5 / 15
120
V
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
450
IC MAX
I
I
I
I
400
350
300
250
200
150
100
50
I
I
I
I
I
I
I
I
V
V
V
V
0
0
100
200
300
400
500
600
700
C E (V)
V
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
25
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
T j
125 °C
4 Ω
4 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-5
V
VGE (0%) =
-5
15
V
V
V
GE (100%) =
C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
350
120
171
V
350
120
62
V
I
C (100%) =
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
C (100%) =
tf
350
120
12
V
VC (100%) =
I C (100%) =
350
120
14
V
I
A
A
=
ns
tr
=
ns
Copyright Vincotech
26
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
VF (100%) =
350
120
129
103
V
I F (100%) =
Q r (100%) =
120
A
I
I
F (100%) =
A
9,16
μC
RRM (100%) =
A
trr
=
ns
Copyright Vincotech
27
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with solder pins
without thermal paste 12mm housing with press-fit pins
with thermal paste 12mm housing with solder pins
with thermal paste 12mm housing with press-fit pins
Ordering Code
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
10-FY07NPA200SM02-L366F08-/3/
10-PY07NPA200SM02-L366F08Y-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
6,9
0
Function
Therm1
52,2
52,2
36,2
33,2
33,2
9,2
1
2
Therm2
S4
3
4
6,75
7,9
4,9
5,75
6,9
3,9
0
G14
G18
S2
5
6
7
6,2
G12
G16
DC-
DC-
8
6,2
9
2,7
10
0
0
11
12
13
14
2,7
0
2,7
0
2,7
2,7
5,4
5,4
DC-
DC-
DC-
DC-
15
16
17
18
19
20
21
22
2,7
0
12,75
12,75
15,45
15,45
22,8
GND
GND
GND
GND
DC+
DC+
DC+
DC+
2,7
0
2,7
0
22,8
2,7
0
25,5
25,5
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
2,7
0
28,2
28,2
22,45
21,3
24,3
22,15
21
DC+
DC+
S1
18,3
21,3
21,3
43
G15
G11
S3
46
G17
G13
Ph
46
24
52,2
49,5
52,2
49,5
52,2
49,5
52,2
20,1
22,8
22,8
25,5
25,5
28,2
28,2
Ph
Ph
Ph
Ph
Ph
Ph
Copyright Vincotech
28
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T15, T16
IGBT
650V
100A
200A
100A
100A
100A
-
Buck Switch
D11, D12
T13, T14, T17, T18
D13, D14, D17, D18
D43, D44, D47, D48
C1, C2
FWD
IGBT
650V
650V
650V
650V
630V
-
Buck Diode
Out. Boost Switch
Out. Boost Diode
Out. Boost Inverse Diode
DC Link Capacitor
Thermistor
FWD
FWD
Capacitor
NTC
Rt
-
Copyright Vincotech
29
19 Dec. 2018 / Revision 5
10-FY07NPA200SM02-L366F08 /
10-PY07NPA200SM02-L366F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for if no series packaging available packages see vincotech.com website.
Package data
Package data for if no series packaging available packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xY07NPA200SM02-L366F08x-D5-14
19 Dec. 2018
Thermistor type has been changed to Tateyama
8
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
19 Dec. 2018 / Revision 5
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