10-FY09S2A065ME-L869L08 [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-FY09S2A065ME-L869L08 |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总20页 (文件大小：10856K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY09S2A065ME-L869L08
datasheet
flowBOOST 1 symmetric dual
900 V / 65 mΩ
Features
flow 1 12 mm housing
● Symmetric Boost for 1500Vdc applications
● Full SiC for ultra high speed frequencies
Schematic
Target applications
● Solar Inverters
Types
● 10-FY09S2A065ME-L869L08
Copyright Vincotech
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23 Jun. 2020 / Revision 5
10-FY09S2A065ME-L869L08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VDSS
Drain-source voltage
900
V
Ts = 80 °C
Ts = 72 °C
24
A
ID
Drain current
Tj = Tjmax
26
A
IDM
EAS
Ptot
Peak drain current
tp limited by Tjmax
VDD = 50 V
Tj = Tjmax
90
110
A
mJ
W
Avalanche energy, single pulse
Total power dissipation
ID = 22 A
Ts = 80 °C
54
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
28
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
92
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 150 °C
Ts = 80 °C
66
A
Tj = Tjmax
87
W
°C
Tjmax
Maximum junction temperature
175
ByPass Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
33
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
200
200
43
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
9,6
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Switch
Static
25
63
79
87
78(1)
rDS(on)
Drain-source on-state resistance
15
20
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
0
0,005
25
25
25
1,7
2,4
10
3,5
250
100
V
15
0
0
nA
µA
Ω
900
400
600
1
4,7
30,4
7,5
12
Qg
QGS
QGD
Ciss
Coss
Crss
VSD
Gate to source charge
-4/15
20
25
nC
Gate to drain charge
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
660
60
f = 1 Mhz
0
0
0
0
25
25
pF
V
4
4,8
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,75
K/W
25
6,4
6,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
6
3,2
tr
125
150
25
3
3,2
Rgon = 4 Ω
Rgoff = 4 Ω
23,2
24,4
24,6
12,35
6,99
7,36
0,122
0,117
0,115
0,036
0,033
0,034
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
600
20
tf
125
150
25
ns
QrFWD=0,157 µC
QrFWD=0,17 µC
QrFWD=0,158 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,43
1,74
1,84
20
1,6(1)
400
VF
IR
Forward voltage
20
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
160
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,09
K/W
25
33,83
36,8
IRRM
Peak recovery current
125
150
25
A
35,98
8,65
trr
Reverse recovery time
125
150
25
8,62
ns
8,67
0,157
0,17
di/dt=7740 A/µs
di/dt=8533 A/µs
di/dt=8481 A/µs
Qr
Recovered charge
0/15
600
20
125
150
25
μC
0,158
0,018
0,021
0,014
11350
11573
11522
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
ByPass Diode
Static
25
1,22
1,2
VF
IR
Forward voltage
25
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,61
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
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datasheet
Boost Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
80
50
VGS
:
-6 V
-4 V
-2 V
0 V
7 V
8 V
25
0
60
40
20
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
-25
-50
-75
-100
0,0
2,5
5,0
7,5
10,0
12,5
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGS
Tj =
Tj:
VGS from -6 V to 17 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
60
10
50
40
30
20
10
0
0
10
-1
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-2
10
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0,0
2,5
5,0
7,5
10,0
12,5
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,751
25 °C
125 °C
150 °C
VDS
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,68E-02
2,14E-01
6,08E-01
4,08E-01
2,18E-01
2,87E-01
2,51E+00
4,20E-01
8,60E-02
2,04E-02
3,79E-03
6,31E-04
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datasheet
Boost Switch Characteristics
figure 5.
MOSFET
figure 6.
MOSFET
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGS = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10
1
5,0
2,5
0,1
0,01
0,0
-2,5
-5,0
1
10
100
1000
10000
0
5
10
15
20
25
30
35
V
CE(V)
Qg(μC)
D =
ID
=
single pulse
At
38
A
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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datasheet
Boost Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,093
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,73E-02
1,05E-01
5,77E-01
1,79E-01
1,16E-01
6,86E-02
2,96E+00
4,20E-01
8,31E-02
2,65E-02
5,49E-03
1,07E-03
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datasheet
ByPass Diode Characteristics
figure 9.
Rectifier
figure 10.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-2
10
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,611
25 °C
125 °C
Tj:
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
6,72E-02
1,48E-01
8,68E-01
2,53E-01
1,69E-01
1,06E-01
2,72E+00
4,14E-01
8,33E-02
2,89E-02
5,15E-03
9,10E-04
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datasheet
Thermistor Characteristics
figure 11.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Boost Switching Characteristics
figure 12.
MOSFET
figure 13.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
=
=
=
=
VDS
VGS
ID
=
=
=
600
0/15
4
V
V
Ω
Ω
125 °C
150 °C
600
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
VGS
Rgon
Rgoff
4
figure 14.
FWD
figure 15.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
=
=
=
VDS
VGS
ID
=
=
=
600
0/15
4
V
V
Ω
125 °C
150 °C
600
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
VGS
Rgon
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datasheet
Boost Switching Characteristics
figure 16.
MOSFET
figure 17.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
-1
10
-1
10
td(off)
td(off)
tf
-2
10
-2
10
td(on)
tr
td(on)
tf
tr
-3
10
-3
0,0
10
0
5
10
15
20
25
30
35
40
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
4
°C
V
150
600
0/15
20
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 18.
FWD
figure 19.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,012
0,010
0,008
0,006
0,004
0,002
0,000
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
VGS
0/15
20
Tj:
Tj:
Rgon
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datasheet
Boost Switching Characteristics
figure 20.
FWD
figure 21.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
VGS
0/15
20
Tj:
Tj:
Rgon
figure 22.
FWD
figure 23.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
45
40
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
0/15
20
V
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
A
Tj:
Tj:
Rgon
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datasheet
Boost Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
17500
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
15000
12500
10000
7500
5000
2500
0
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
0/15
20
Tj:
Tj:
Rgon
Ω
figure 26.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
80
ID MAX
70
60
50
40
30
20
10
0
0
200
400
600
800
1000
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
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datasheet
Boost Switching Definitions
figure 27.
MOSFET
figure 28.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 29.
MOSFET
figure 30.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
16
23 Jun. 2020 / Revision 5
10-FY09S2A065ME-L869L08
datasheet
Boost Switching Definitions
figure 31.
FWD
figure 32.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 33.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
17
23 Jun. 2020 / Revision 5
10-FY09S2A065ME-L869L08
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-FY09S2A065ME-L869L08
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
2
3
4
5
6
7
8
X
Y
Function
DC-In2
S25
52,5
50,6
47,6
43,8
35,9
31,3
21,2
16,6
8,7
4,9
1,9
0
10,1
10,1
0
0
7,6
6,2
6,2
0
6,5
6,5
0
6,2
6,2
7,6
0
G25
Boost-2
DC+In2
Boost+2
Boost+1
DC+In1
Boost-1
G15
S15
DC-In1
G17
9
10
11
12
13
14
15
21
24
25,8
S17
DC-
Boost1
16
0
28,5
DC-
Boost1
N1
N1
DC+Boost
DC+Boost
DC+Boost
N2
N2
S27
G27
DC-
17
18
19
20
21
22
23
24
25
26
9,7
28,5
28,5
28,5
28,5
28,5
28,5
28,5
24
12,4
22,1
24,8
27,5
37,1
39,8
39,4
39,4
49,5
21
28,5
Boost2
27
49,5
25,8
DC-
Boost2
Therm1
Therm2
28
29
52,5
52,5
28,5
21,3
Copyright Vincotech
18
23 Jun. 2020 / Revision 5
10-FY09S2A065ME-L869L08
datasheet
Pinout
DC+Boost
19,20,21
D18
D28
DC+In2
DC+In1
5
8
D17
D27
Boost+2
Boost+1
7
6
T27
T17
G27
G17
13
25
S27
S17
14
24
N1
17,18
N2
22,23
T25
T15
G25
G15
3
10
S25
S15
2
11
D15
D25
Boost-2
Boost-1
4
9
D26
DC-In2
DC-In1
1
12
D16
15,16
DC-Boost1
26,27
DC-Boost2
Rt
Therm1
28
Therm2
29
Identification
Component
Voltage
Current
Function
Comment
ID
T15, T17, T25, T27
D15, D17, D25, D27
D16, D18, D26, D28
Rt
MOSFET
FWD
Rectifier
NTC
900 V
1200 V
1600 V
65 mΩ
20 A
25 A
Boost Switch
Boost Diode
ByPass Diode
Thermistor
Copyright Vincotech
19
23 Jun. 2020 / Revision 5
10-FY09S2A065ME-L869L08
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
2
ID extended
10-FY09S2A065ME-L869L08-D4-14
17 Jul. 2019
2...9
Correction of Boost characteristics
10-FY09S2A065ME-L869L08-D5-14
23 Jun. 2020
Calculation method of RBSOA (figure 26.) changed
15
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
23 Jun. 2020 / Revision 5
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