10-FZ07BVA020SM-LD44E08 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FZ07BVA020SM-LD44E08 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总43页 (文件大小：2581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
flowSOL 0 BI (TL)
650 V / 20 A
Features
flow 0 12 mm housing
● For one-phase solar applications
● Booster + Innovative H6.5 topology
● LVRT (Low voltage ride throught) capability
● Ultra Fast IGBT H5
● NTC
Solder pin
Press-fit pin
Schematic
Target applications
● Solar Inverters
Types
● 10-FZ07BVA020SM-LD44E08
● 10-PZ07BVA020SM-LD44E08Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Low Buck Switch / High Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
20
V
A
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
60
A
Ts = 80 °C
51
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
1
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
15
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
30
A
Tj = Tjmax
Ts = 80 °C
43
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
IC
Collector-emitter voltage
650
15
V
A
Collector current
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
45
A
Ts = 80 °C
50
W
V
±20
6
Short circuit ratings
VGE = 15 V Vcc = 360 V Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Low Boost Diode / High Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
15
V
A
30
A
Tj = Tjmax
Ts = 80 °C
43
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
20
V
A
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
60
A
Tj = Tjmax
Ts = 80 °C
51
W
V
±20
175
Maximum junction temperature
°C
Input Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
20
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
40
A
Tj = Tjmax
51
W
°C
Tjmax
Maximum junction temperature
175
ByPass Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1600
25
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
200
200
44
A
50 Hz Single Half Sine Wave
tp = 10 ms
Tj = 150 °C
Ts = 80 °C
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
150
Input Boost Sw. Protection Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
6
V
A
12
36
175
A
Tj = Tjmax
Ts = 80 °C
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
3
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
6000
2500
V
Visol
Isolation voltage
AC Voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
8,66 / 8,74
> 200
mm
mm
Solder pin / press-fit pin
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-PZ07BVA020SM-LD44E08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Low Buck Switch / High Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0002 25
25
3,3
4
4,7
2,3
V
V
1,60
1,75
1,79
Collector-emitter saturation voltage
VCEsat
15
20
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
200
none
1200
30
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
5,2
15
520
20
48
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,88
K/W
Dynamic
25
40
36
36
Turn-on delay time
td(on)
125
150
25
9
Rise time
tr
125
150
25
10
10
55
Rgon = 16 Ω
Rgoff = 16 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
67
69
11
12
±15
350
20
tf
13
0,449
0,596
0,616
0,037
0,078
Qr
FWD
Qr
FWD
Qr
FWD
= 0,6 μC
= 1,1 μC
= 1,3 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
0,091
Copyright Vincotech
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04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,51
1,43
1,39
2
VF
IR
125
150
Forward voltage
15
V
Reverse leakage current
650
25
0,94
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,23
K/W
Dynamic
25
11
17
19
IRRM
125
150
25
Peak recovery current
A
92
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
115
127
ns
di/dt = 2028 A/μs
di/dt = 1981 A/μs ±15
di/dt = 1962 A/μs
0,596
1,146
1,301
0,106
0,208
0,244
217
350
20
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
136
128
Copyright Vincotech
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04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00021 25
25
5,1
5,8
6,4
V
V
1,03
1,54
1,74
1,81
1,95
VCEsat
Collector-emitter saturation voltage
15
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
5
µA
nA
Ω
20
300
none
551
17
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
480
15
87
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,89
K/W
Dynamic
25
48
47
49
Turn-on delay time
td(on)
125
150
25
17
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
21
21
Rgon = 16 Ω
Rgoff = 16 Ω
ns
115
133
134
87
106
122
0,363
0,458
0,465
0,284
0,400
Turn-off delay time
Fall time
td(off)
±15
350
15
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,5 μC
= 1 μC
= 1,1 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
0,414
Copyright Vincotech
7
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Low Boost Diode / High Boost Diode
Static
25
1,51
1,43
1,39
2
VF
IR
125
150
Forward voltage
15
V
Reverse leakage current
650
25
0,94
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,23
K/W
Dynamic
25
10
13
15
IRRM
125
150
25
Peak recovery current
A
88
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
115
125
ns
di/dt = 1053 A/μs
di/dt = 969 A/μs ±15
di/dt = 910 A/μs
0,504
0,961
1,081
0,075
0,159
0,186
67
350
15
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
195
144
Copyright Vincotech
8
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Input Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0002 25
25
3,3
4
4,7
2,3
V
V
1,60
1,75
1,79
Collector-emitter saturation voltage
VCEsat
15
20
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
200
none
1200
30
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
5,2
15
520
20
48
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,88
K/W
Dynamic
25
41
44
43
Turn-on delay time
td(on)
125
150
25
8
Rise time
tr
125
150
25
9
8
54
Rgon = 16 Ω
Rgoff = 16 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
67
70
9
11
±15
350
20
tf
11
0,411
0,482
0,508
0,039
0,118
Qr
FWD
Qr
FWD
Qr
FWD
= 0,7 μC
= 1,3 μC
= 1,4 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
0,138
Copyright Vincotech
9
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Input Boost Diode
Static
25
1,56
1,51
1,51
2
5
VF
IR
125
150
Forward voltage
20
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,88
K/W
Dynamic
25
17
24
26
IRRM
125
150
25
Peak recovery current
A
62
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
101
110
ns
di/dt = 3021 A/μs
di/dt = 2661 A/μs ±15
di/dt = 2616 A/μs
0,656
1,259
1,427
0,125
0,279
0,323
160
350
20
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
264
279
ByPass Diode
Static
25
125
1,22
1,21
1,8
50
VF
IR
Forward voltage
Reverse leakage current
Thermal
25
V
1600
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
Copyright Vincotech
10
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Input Boost Sw. Protection Diode
Static
25
1,73
1,59
1,54
2
5
VF
IR
125
150
Forward voltage
6
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,65
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
11
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Low Buck Switch / High Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
9
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,88
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
7,73E-02
1,62E-01
7,45E-01
4,66E-01
2,69E-01
1,63E-01
2,79E+00
3,73E-01
7,14E-02
1,63E-02
3,67E-03
4,26E-04
Copyright Vincotech
12
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Low Buck Switch / High Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
I
I
I
I
V
V
V
V
A
D =
single pulse
80 ºC
I C =
20
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
13
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
2,23
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,05E-01
2,43E-01
1,06E+00
4,77E-01
2,72E-01
7,91E-02
2,52E+00
2,26E-01
5,21E-02
1,22E-02
2,29E-03
4,79E-04
Copyright Vincotech
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04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D
=
tp
1,89
IGBT thermal model values
(K/W)
/ T
VCE
=
Tj:
R th(j-s)
=
K/W
R
τ
(s)
5,08E-02
1,07E-01
5,07E-01
6,69E-01
3,46E-01
2,08E-01
4,13E+00
6,48E-01
1,07E-01
3,27E-02
5,10E-03
4,07E-04
Copyright Vincotech
15
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE
)
I
I
I
I
V
V
V
V
D =
single pulse
80 ºC
I C
=
15
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
I
I
I
I
t
t
t
t
VCE
Tj
=
VCE
Tj
≤
400
150
V
ºC
400
150
V
ºC
≤
≤
Copyright Vincotech
16
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Low Boost Diode / High Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
2,23
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,05E-01
2,43E-01
1,06E+00
4,77E-01
2,72E-01
7,91E-02
2,52E+00
2,26E-01
5,21E-02
1,22E-02
2,29E-03
4,79E-04
Copyright Vincotech
17
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
9
μs
V
25 °C
125 °C
150 °C
D
=
tp
1,88
IGBT thermal model values
(K/W)
/ T
VCE
=
Tj:
R th(j-s)
=
K/W
R
τ
(s)
7,73E-02
1,62E-01
7,45E-01
4,66E-01
2,69E-01
1,63E-01
2,79E+00
3,73E-01
7,14E-02
1,63E-02
3,67E-03
4,26E-04
Copyright Vincotech
18
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
A
D =
single pulse
80 ºC
I C
=
20
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
19
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,88
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,42E-02
1,79E-01
8,86E-01
4,50E-01
2,75E-01
3,60E+00
3,95E-01
7,08E-02
1,69E-02
2,45E-03
Copyright Vincotech
20
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
ByPass Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
R th(j-s)
tp / T
1,59
Tj:
K/W
Diode thermal model values
R (K/W)
τ
(s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
Copyright Vincotech
21
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
2,65
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,02E-01
3,50E-01
9,53E-01
7,66E-01
4,76E-01
2,56E+00
1,72E-01
3,96E-02
5,83E-03
9,87E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
22
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
20
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
±15
16
V
V
Ω
350
±15
20
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
23
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
16
°C
V
150
350
±15
20
°C
V
Tj
VCE
=
=
=
=
=
Tj
VCE
VGE
I C
=
=
=
=
VGE
V
V
Ω
Ω
A
R gon
R goff
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
At
VCE
=
350
V
V
Ω
At
VCE
=
V
V
A
25 °C
25 °C
VGE
R gon
=
=
±15
16
Tj:
VGE
I C
=
±15
20
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
24
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
350
±15
16
V
V
Ω
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
±15
20
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
350
±15
16
V
V
Ω
350
±15
20
V
V
A
At
VCE
=
At
VCE =
25 °C
25 °C
VGE
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
25
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
d
iF
/
/
dt
dt
t
t
t t
t t
t
t
di
rr/dt
dirr
i
i
i i
i i
i
i
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
20
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
=
=
16
16
R gon
R goff
Ω
Copyright Vincotech
26
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
16 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
20
V
350
20
V
A
A
67
ns
36
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
20
V
VC (100%) =
I C (100%) =
350
20
V
A
A
12
ns
tr
=
10
ns
Copyright Vincotech
27
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
350
20
V
20
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
1,15
μC
17
A
115
ns
t rr
=
Copyright Vincotech
28
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
Tj:
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
350
±15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
±15
16
V
V
Ω
350
±15
15
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
29
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
16
°C
V
150
350
±15
15
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
A
t
VCE
=
350
V
V
Ω
At
VCE
=
V
V
A
25 °C
25 °C
VGE
R gon
=
=
±15
16
Tj:
VGE
I C
=
±15
15
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
30
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
350
±15
16
V
V
Ω
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
±15
15
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
350
±15
16
V
V
Ω
350
±15
15
V
V
A
A
t
VCE
=
At
VCE =
25 °C
25 °C
VGE
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
31
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
d
iF
/
/
dt
dt
t
t
t t
t t
t
t
di
rr/dt
dirr
i
i
i i
i i
i
i
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
15
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
=
=
16
16
R gon
R goff
Ω
Copyright Vincotech
32
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
16 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
15
V
350
15
V
A
A
133
ns
47
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
15
V
VC (100%) =
I C (100%) =
350
15
V
A
A
106
ns
tr
=
21
ns
Copyright Vincotech
33
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
350
15
V
15
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
0,96
μC
13
A
115
ns
t rr
=
Copyright Vincotech
34
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
With an inductive load at
25 °C
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
20
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
±15
16
V
V
Ω
350
±15
20
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
35
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
16
°C
V
150
350
±15
20
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
A
t
VCE
=
350
V
V
Ω
At
VCE
=
V
V
A
25 °C
25 °C
VGE
R gon
=
=
±15
16
Tj:
VGE
I C
=
±15
20
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
36
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
350
±15
16
V
V
Ω
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
±15
20
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
350
±15
16
V
V
Ω
350
±15
20
V
V
A
A
t
VCE
=
At
VCE =
25 °C
25 °C
VGE
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
37
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
d
iF
/
/
dt
dt
t
t
t t
t t
t
t
di
rr/dt
dirr
i
i
i i
i i
i
i
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
20
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
16
16
Ω
Copyright Vincotech
38
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
16 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
20
V
350
20
V
A
A
67
ns
44
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
20
V
VC (100%) =
I C (100%) =
350
20
9
V
A
A
11
ns
tr
=
ns
Copyright Vincotech
39
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Input Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
350
20
V
20
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
1,26
μC
24
A
101
ns
t rr
=
Copyright Vincotech
40
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with press-fit pins
with thermal paste 12 mm housing with press-fit pins
Ordering Code
10-FZ07BVA020SM-LD44E08
10-FZ07BVA020SM-LD44E08-/3/
10-PZ07BVA020SM-LD44E08Y
10-PZ07BVA020SM-LD44E08Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
Function
G13
28,7
25,9
23,1
17,6
12,1
9,3
2,8
0
1
2
0
S13
DC-2
DC+
3
4
0
0
5
0
S14
6
0
G14
7
0
G25
8
0
S25
9
0
5,05
DC-Boost
10
0
10,55 DC+Boost
11
12
13
0
0
9,3
16,15
22,6
22,6
DC+In
Boost+
G12
14
15
16
17
18
19
20
21
22
12,1
17,6
23,1
25,9
28,7
22,6
22,6
22,6
22,6
22,6
S12
DC+
DC-1
S11
G11
Not assembled
33,6
33,6
14,55
8,05
G21
G22
Not assembled
23
24
25
26
27
28
29
30
33,6
30,8
33,6
30,8
17,6
11
17,35
14,55
5,25
8,05
14,1
8,5
Ph1
S21
Ph2
S22
A20
Therm1
Therm2
10
11,5
Not assembled
Copyright Vincotech
41
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
Current
Function
Comment
T11, T12, T13, T14
D21, D22
20 A
15 A
15 A
15 A
20 A
20 A
25 A
6 A
Low Buck Switch / High Buck Switch
Buck Diode
FWD
650 V
T21, T22
IGBT
FWD
650 V
650 V
650 V
650 V
1600 V
650 V
Boost Switch
D12, D14, D20
Low Boost Diode / High Boost Diode
Input Boost Switch
Input Boost Diode
T25
D25
D26
D45
Rt
IGBT
FWD
Rectifier
FWD
ByPass Diode
Input Boost Sw. Protection Diode
Thermistor
NTC
Copyright Vincotech
42
04 Apr. 2018 / Revision 2
10-FZ07BVA020SM-LD44E08
10-PZ07BVA020SM-LD44E08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xZ07BVA020SM-LD44E08x-D2-14
04 Apr. 2018
Added Protection Diode, corrected Dynamic values
All
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
43
04 Apr. 2018 / Revision 2
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