10-FZ07NBA075SM-P916L58 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FZ07NBA075SM-P916L58 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总19页 (文件大小：1594K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ07NBA075SM-P916L58
datasheet
flowBOOST 0 symmetric
650 V / 75 A
Features
flow0 12mm housing
● High efficiency symmetric boost
● Ultra high switching frequency
● Clip-In PCB mounting
● Low Inductance Layout
Schematic
Target applications
● Solar inverters
● UPS
● Power supplies
Types
● 10-FZ07NBA075SM-P916L58
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Switch
Collector-emitter voltage
VCES
I C
650
57
V
A
Collector current
Tj = Tjmax
limited by
T jmax
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
225
97
A
I CRM
P tot
VGES
Tjmax
tp
=
= 80 °C
Ts
W
V
Tj Tjmax
±20
175
Maximum Junction Temperature
°C
1
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Diode
Peak Repetitive Reverse Voltage
VRRM
I F
650
59
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = T jmax
Ts = 80°C
Ts = 80°C
150
78
A
I FRM
P tot
Tjmax
Tj = T jmax
W
°C
Maximum Junction Temperature
175
Boost Inverse Diode
Peak Repetitive Reverse Voltage
VRRM
I F
650
36
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
=
80°C
=
Tj T jmax
T s
I FRM
P tot
Tjmax
60
A
Tj = T jmax
Ts = 80°C
61
W
°C
Maximum Junction Temperature
175
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(
- 25)
Tjmax
Isolation Properties
Isolation voltage
Visol
DC Voltage
tp = 2 s
4000
min. 12,7
9,53
V
Creepage distance
Clearance
mm
mm
Comparative Tracking Index
CTI
> 200
2
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VGS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Boost Switch
Static
Gate-emitter threshold voltage
=
0,00075 25
25
3,3
4
4,7
V
V
VGE(th) VGE VCE
1,67
1,84
1,89
2,22
Collector-emitter saturation voltage
15
75
125
150
VCEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
I CES
I GES
r g
20
120
none
4300
75
C ies
Output capacitance
f = 1 MHz
0
25
25
25
pF
C oes
C res
Q g
Reverse transfer capacitance
Gate charge
16
15
520
75
166
nC
Thermal
phase-change
material
Thermal resistance junction to sink
0,98
K/W
R
th(j-s)
ʎ
= 3,4 W/mK
IGBT Switching
25
23
23
23
Turn-on delay time
td(on)
125
150
25
R goff = 4 Ω
R gon = 4 Ω
14
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
15
16
116
131
135
4
ns
Turn-off delay time
Fall time
td(off)
15/0
350
75
tf
8
10
QrFWD = 2,4 ꢀC
QrFWD = 4,6 ꢀC
QrFWD = 5,3 ꢀC
1,058
1,486
1,591
0,277
0,481
0,527
Turn-on energy (per pulse)
Turn-off energy (per pulse)
E on
mWs
E off
125
150
3
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VGS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Boost Diode
Static
25
1,53
1,49
1,47
1,77
3,8
Forward voltage
75
125
150
V
VF
Reverse leakage current
650
25
µA
I r
Thermal
phase-change
material
Thermal resistance junction to sink
1,23
K/W
R th(j-s)
ʎ
= 3,4 W/mK
FWD Switching
25
51
69
74
Peak recovery current
I RRM
125
150
25
A
ns
84
Reverse recovery time
t rr
125
150
25
125
150
25
125
150
25
125
150
109
123
di /dt = 5120 A/ꢀs
di /dt = 4804 A/ꢀs 15/0
di /dt = 5399 A/ꢀs
2,383
4,616
5,343
0,511
1,036
1,222
750
Recovered charge
Qr
350
75
ꢀC
Reverse recovered energy
Peak rate of fall of recovery current
E rec
mWs
A/µs
(di rf/dt)max
682
570
Boost Inverse Diode
Static
25
1,64
1,56
1,87
0,36
Forward voltage
30
V
VF
I r
150
Reverse leakage current
650
25
µA
Thermal
phase-change
material
Thermal resistance junction to sink
1,56
K/W
R th(j-s)
ʎ
= 3,4 W/mK
4
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VGS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Thermistor
Rated resistance
25
100
25
25
25
25
22
kΩ
%
R
ΔR/R
P
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R 100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
Tol. ±1%
Tol. ±1%
B(25/50)
3962
4000
B-value
K
B(25/100)
Vincotech NTC Reference
I
5
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
IGBT
IC = f(VCE
)
IC = f(VCE
)
I
I
I
I
I
I
I
I
tp
=
250
15
ꢀs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
ꢀs
°C
VGE
=
Tj:
VGE from
8 V to 17 V in steps of 1 V
Typical transfer characteristics
IGBT
Transient Thermal Impedance as function of Pulse duration
IGBT
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
10
101
tp(s)
102
tp
=
100
10
ꢀs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,98
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
7,21E-02
1,46E-01
4,74E-01
1,76E-01
6,17E-02
4,63E-02
2,25E+00
3,32E-01
6,42E-02
1,63E-02
3,99E-03
3,57E-04
6
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
IGBT
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
At
At
D =
single pulse
80 ºC
IC=
75
A
Th
=
VGE
=
±15
V
Tj
=
Tjmax
ºC
7
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Diode Characteristics
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
FWD
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
ꢀs
25 °C
125 °C
150 °C
tp / T
1,23
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,04E-02
1,74E-01
6,28E-01
2,05E-01
8,90E-02
4,76E-02
2,68E+00
2,85E-01
6,23E-02
1,65E-02
4,15E-03
4,96E-04
8
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Inverse Diode Characteristics
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
FWD
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
ꢀs
25 °C
150 °C
tp / T
1,56
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
9,10E-02
3,45E-01
7,17E-01
2,97E-01
1,15E-01
2,00E+00
1,68E-01
4,13E-02
7,43E-03
1,80E-03
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T)
9
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
350
15/0
4
V
V
Ω
Ω
j
:
125 °C
150 °C
350
15/0
75
V
V
A
125 °C
150 °C
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
T j:
R gon
R goff
4
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c
)
Erec = f(r g )
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
T j
350
15/0
4
V
V
Ω
:
350
15/0
75
V
V
A
VCE
VGE
=
=
=
T j
VCE
VGE
I C
=
=
=
R gon
10
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(r g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
15/0
4
°C
150
350
15/0
75
°C
V
Tj =
Tj =
V
V
Ω
Ω
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
4
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
25 °C
350
15/0
4
V
V
Ω
25 °C
350
15/0
75
V
V
A
At
VCE
=
At
VCE =
:
:
Tj
125 °C
150 °C
125 °C
150 °C
VGE
R gon
=
=
Tj
VGE
I C
=
=
11
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
25 °C
V
V
Ω
350
15/0
75
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
:
15/0
4
125 °C
150 °C
=
T j
=
T j
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
350
25 °C
V
V
Ω
350
V
V
A
25 °C
At
VCE
=
At
VCE =
:
:
15/0
4
125 °C
150 °C
15/0
75
125 °C
150 °C
VGE
=
=
T j
VGE
I C
=
T j
R gon
=
12
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
d
iF
/
d
t
t
t
t
t
t
t
t
t
dir r/dt
i
i
i
i
dir r
/dt
i
i
i
i
25 °C
At
VCE
=
350
V
V
Ω
At
VCE
VGE
I C
=
350
15/0
75
V
V
A
25 °C
125 °C
150 °C
:
:
15/0
4
125 °C
150 °C
VGE
=
=
T j
=
T j
R gon
=
Figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
175
°C
Ω
4
4
R gon =
R goff =
Ω
13
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
T j
Rgon
R goff
4 Ω
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
IC
VCE
VGE
VGE
tEoff
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
350
75
V
350
V
V
75
A
A
0,131
0,179
ꢀs
ꢀs
0,023
0,124
ꢀs
ꢀs
t doff
t Eoff
=
=
tdon
tEon
=
=
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
tr
VCE
VCE
tf
350
350
75
V
V
VC (100%) =
I C (100%) =
VC (100%) =
I C (100%) =
A
75
A
0,008
µs
0,015
µs
t f
=
tr =
14
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Pon
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
26,34
0,48
0,18
kW
mJ
ꢀs
P on (100%) =
Eon (100%) =
26,34
1,49
0,12
kW
mJ
ꢀs
t Eoff
=
tEon =
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
350
V
A
A
Vd (100%) =
I d (100%) =
I RRM (100%) =
75
-69
0,109
t rr
=
ꢀs
15
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Definitions
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
Id
Qrr
tErec
Prec
75
A
26,34
1,04
0,22
kW
mJ
ꢀs
I d (100%) =
P rec (100%) =
Erec (100%) =
Q rr (100%) =
4,62
0,22
ꢀC
ꢀs
t Qrr
=
tErec =
16
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 12mm housing with solder pins
10-FZ07NBA075SM-P916L58
Name
Date code
WWYY
UL & Vinco
UL Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
Vinco LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
0
0
0
0
0
0
Function
G1
33,6
30,6
23,65
20,65
14,9
11,9
2
S1
3
+GND
+GND
+DC
4
5
6
+DC
7
Not assembled
Not assembled
8
9
0
3
7,8
7,8
+Boost
10
+Boost
11
12
0
3
14,8
14,8
-Boost
-Boost
13
14
15
16
17
18
19
20
21
22
Not assembled
Not assembled
11,9
14,9
20,65
23,65
30,6
33,6
33,6
33,6
22,6
22,6
22,6
22,6
22,6
22,6
14,55
8,05
-DC
-DC
-GND
-GND
S2
G2
NTC1
NTC2
17
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Pinout
Identification
ID
T1,T2
D1,D2
D5,D6
T
Component
IGBT
Voltage
650 V
Current
Function
Comment
75 A
75 A
30 A
Boost Switch
Boost Diode
FWD
650 V
FWD
650 V
Boost Inverse Diode
Thermistor
NTC
18
Copyright Vincotech
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ07NBA075SM-P916L58-D1-14
22 Feb. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
19
Copyright Vincotech
22 Feb. 2016 / Revision 1
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