10-FZ07BVA030S5-LD45E08 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-FZ07BVA030S5-LD45E08 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总46页 (文件大小：5846K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
650 V / 30 A
flow SOL 0 BI (TL)
Features
flow 0 12 mm housing
● For one-phase solar applications
● Booster + Innovative H6.5 topology
● Fast IGBT S5
● LVRT (Low voltage ride through) capability
● NTC
Schematic
Target applications
● Solar Inverters
Types
● 10-FZ07BVA030S5-LD45E08
● 10-PC07BVA030S5-LD45E06Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Low Buck Switch / High Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
31
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
51
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
1
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
28
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
40
A
Tj = Tjmax
52
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
IC
Collector-emitter voltage
650
24
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
60
A
46
W
V
±20
tSC
Tj ≤ 150 °C
VGE = 15 V
6
µs
Short circuit ratings
VCC
360
V
Tjmax
Maximum Junction Temperature
175
°C
High Boost Diode / Low Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
28
V
A
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
40
A
Tj = Tjmax
52
W
°C
Tjmax
Maximum junction temperature
175
Input Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
31
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
51
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
2
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
42
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60
A
Tj = Tjmax
50
W
°C
Tjmax
Maximum Junction Temperature
175
Input Boost Sw. Protection Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
14
V
A
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj < 150 °C
Tj = Tjmax
20
A
33
W
°C
Tjmax
Maximum Junction Temperature
175
ByPass Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1600
46
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
270
370
56
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum Junction Temperature
150
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
8,66
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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10-PC07BVA030S5-LD45E06Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Low Buck Switch / High Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0003 25
25
3,2
4
4,8
V
V
1,35
1,54
1,57
1,75
VCEsat
Collector-emitter saturation voltage
15
30
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
1800
55
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
7
15
520
30
70
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,86
K/W
Dynamic
25
56
56
56
td(on)
125
150
25
Turn-on delay time
9
tr
Rise time
125
150
25
10
11
84
Rgoff = 16 Ω
Rgon = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
101
107
16
31
46
0,571
0,698
0,739
0,197
0,377
0,430
±15
350
30
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,9 μC
= 1,7 μC
= 1,8 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
125
1,56
1,51
1,92
1,28
VF
IR
Forward voltage
Reverse leakage current
Thermal
20
V
650
25
µA
phase-change
material
Rth(j-s)
Thermal resistance junction to sink
1,82
K/W
λ = 3,4 W/mK
Dynamic
25
25
33
35
IRRM
125
150
25
Peak recovery current
A
68
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
110
117
ns
di/dt = NaN A/μs
di/dt = 3243 A/μs ±15
di/dt = 3146 A/μs
0,888
1,656
1,834
0,154
0,330
0,373
1330
341
Recovered charge
350
30
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
407
Copyright Vincotech
6
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,00029 25
5,1
5,8
6,4
V
V
25
1,03
1,49
1,67
1,87
15
0
20
125
650
0
25
25
1
µA
nA
Ω
20
150
none
1100
71
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
32
15
480
20
120
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
2,06
K/W
Dynamic
25
62
61
61
td(on)
125
150
25
Turn-on delay time
22
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
21
20
Rgoff = 16 Ω
Rgon = 16 Ω
ns
131
150
154
72
105
115
0,524
0,705
0,765
0,431
0,607
0,643
td(off)
Turn-off delay time
Fall time
±15
350
20
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,6 μC
= 1,2 μC
= 1,4 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
7
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
High Boost Diode / Low Boost Diode
Static
25
125
1,56
1,51
1,92
1,28
VF
IR
Forward voltage
Reverse leakage current
Thermal
20
V
650
25
µA
phase-change
material
Rth(j-s)
Thermal resistance junction to sink
1,82
K/W
λ = 3,4 W/mK
Dynamic
25
13
17
18
IRRM
125
150
25
Peak recovery current
A
72
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
114
127
ns
di/dt = 1272 A/μs
di/dt = 868 A/μs ±15
di/dt = 1011 A/μs
0,614
1,203
1,382
0,093
0,197
0,234
221
Recovered charge
350
20
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
184
147
Copyright Vincotech
8
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Input Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0003 25
25
3,2
4
4,8
V
V
1,35
1,54
1,57
1,75
VCEsat
Collector-emitter saturation voltage
15
30
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
1800
55
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
7
15
520
30
70
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,86
K/W
Dynamic
25
65
66
66
td(on)
125
150
25
Turn-on delay time
8
tr
Rise time
125
150
25
9
10
87
Rgoff = 16 Ω
Rgon = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
106
111
15
33
45
0,421
0,541
0,579
0,300
0,478
0,529
±15
350
30
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,9 μC
= 1,7 μC
= 2 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
9
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Input Boost Diode
Static
VF
Ir
Forward voltage
30
25
25
1,25
1,7
1,6
V
Reverse leakage current
650
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Dynamic
25
31
44
49
IRRM
125
150
25
Peak recovery current
A
54
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
79
95
ns
di/dt = 4199 A/μs
di/dt = 3916 A/μs ±15
di/dt = 3772 A/μs
0,867
1,706
1,998
0,206
0,431
0,516
1540
650
Recovered charge
350
30
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
780
Input Boost Sw. Protection Diode
Static
25
125
1,67
1,56
1,87
0,14
VF
Ir
Forward voltage
10
V
Reverse leakage current
650
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
2,87
K/W
Copyright Vincotech
10
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
ByPass Diode
Static
25
125
0,8
1,17
1,13
1,8
VF
Ir
Forward voltage
35
V
25
50
1100
Reverse leakage current
1600
145
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,25
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
11
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Low Buck Switch / High Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
V
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,86
Tj:
VCE
=
V
=
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,24E-01
1,92E-01
7,76E-01
4,21E-01
2,47E-01
9,60E-02
2,76E+00
4,60E-01
9,02E-02
2,36E-02
5,25E-03
8,07E-04
Copyright Vincotech
12
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10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Low Buck Switch / High Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C=
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
13
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10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,82
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
5,26E-02
1,17E-01
5,61E-01
5,47E-01
3,91E-01
1,49E-01
5,31E+00
7,49E-01
1,08E-01
3,08E-02
6,39E-03
1,43E-03
Copyright Vincotech
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10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
V
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
2,06
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,31E-02
2,45E-01
1,16E+00
2,43E-01
1,64E-01
1,58E-01
1,78E+00
2,71E-01
6,94E-02
1,36E-02
3,45E-03
4,12E-04
Copyright Vincotech
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10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs Gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
V
I
At
I C=
At
D =
single pulse
80 ºC
20
A
Ts
VGE
Tj =
=
=
±15
V
Tjmax
figure 7.
Short circuit duration as a function of VGE
IGBT
figure 8.
Typical short circuit current as a function of VGE
IGBT
tpSC = f(VGE
)
I SC = f(VGE)
t
I
At
At
VCE
Tj
=
650
175
V
VCE
Tj
≤
650
175
V
≤
ºC
≤
ºC
Copyright Vincotech
16
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10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
High Boost Diode / Low Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,82
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
5,26E-02
1,17E-01
5,61E-01
5,47E-01
3,91E-01
1,49E-01
5,31E+00
7,49E-01
1,08E-01
3,08E-02
6,39E-03
1,43E-03
Copyright Vincotech
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10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
V
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,86
Tj:
VCE
=
V
=
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,24E-01
1,92E-01
7,76E-01
4,21E-01
2,47E-01
9,60E-02
2,76E+00
4,60E-01
9,02E-02
2,36E-02
5,25E-03
8,07E-04
Copyright Vincotech
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18 Jun. 2019 / Revision 2
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10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C=
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
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18 Jun. 2019 / Revision 2
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10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Diode Characteristics
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,92
T j:
K/W
FWD thermal model values
R (K/W)
τ (s)
9,41E-02
3,44E-01
8,56E-01
3,61E-01
1,37E-01
1,27E-01
2,25E+00
2,12E-01
5,84E-02
9,83E-03
2,89E-03
4,79E-04
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
D =
R th(j-s)
tp / T
2,87
T j:
125 °C
K/W
FWD thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Copyright Vincotech
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18 Jun. 2019 / Revision 2
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10-PC07BVA030S5-LD45E06Y
datasheet
ByPass Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp
=
250
μs
25 °C
D =
R th(j-s)
tp / T
1,25
T j:
125 °C
=
K/W
Diode thermal model values
R (K/W)
τ (s)
8,00E-02
1,56E-01
6,95E-01
2,23E-01
9,97E-02
5,22E+00
4,18E-01
8,82E-02
3,07E-02
5,99E-03
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
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10-PC07BVA030S5-LD45E06Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
Tj:
125 °C
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
350
±15
16
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
R gon
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
±15
16
°C
V
Tj =
150
350
±15
30
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
VGE
R gon
=
=
VGE
I C
=
±15
Tj:
Tj:
=
30
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
25 °C
350
At
VCE
VGE
R gon
=
V
V
Ω
At
VCE
VGE
I C
=
V
V
A
25 °C
125 °C
150 °C
=
±15
125 °C
=
±15
Tj:
Tj:
=
16
150 °C
=
30
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
25 °C
At
VCE
=
V
V
Ω
At
VCE
VGE
I C
=
350
±15
30
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
±15
125 °C
=
Tj:
Tj:
R gon
16
150 °C
=
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
30
V
V
A
25 °C
VGE
R gon
=
=
=
125 °C
Tj:
Tj:
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Buck Switching Definitions
General conditions
T j
R gon
=
=
=
125 °C
16 Ω
16 Ω
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
VGE
IC
VCE
VGE
tEoff
VCE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
30
V
350
30
V
A
A
tdoff
tEoff
=
=
0,101
0,194
μs
μs
tdon
tEon
=
=
0,056
0,196
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
VCE
IC
tr
IC
tf
VC (100%) =
I C (100%) =
tf =
350
30
V
VC (100%) =
I C (100%) =
350
30
V
A
A
0,031
μs
tr
=
0,010
μs
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Buck Switching Characteristics
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Qr
Erec
tErec
Prec
I F (100%) =
Q r (100%) =
30
A
P rec (100%) =
Erec (100%) =
10,57
0,33
0,22
kW
mJ
μs
1,66
0,22
μC
μs
tQr
=
tErec =
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
20
V
V
A
Tj:
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
350
±15
16
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
20
V
V
A
Tj:
R gon
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
±15
16
°C
V
Tj =
150
350
±15
20
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
350
±15
16
V
V
Ω
25 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
VGE
R gon
=
=
125 °C
VGE
I C
=
±15
Tj:
Tj:
150 °C
=
20
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
At
VCE
VGE
R gon
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
V
V
A
25 °C
125 °C
150 °C
=
=
±15
Tj:
Tj:
=
=
20
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
20
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
=
Tj:
Tj:
R gon
=
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
25 °C
At
VCE
=
350
±15
16
V
At
VCE
VGE
I C
=
350
±15
20
V
V
A
25 °C
VGE
R gon
=
=
V
125 °C
=
125 °C
Tj:
Tj:
Ω
150 °C
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switching Definitions
General conditions
T j
R gon
=
=
=
125 °C
16 Ω
16 Ω
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VCE
VGE
tEoff
VCE
tEon
-15
VGE (0%) =
V
VGE (0%) =
-15
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
350
20
V
350
20
V
A
A
tdoff
tEoff
=
=
0,150
0,465
μs
μs
tdon
tEon
=
=
0,061
0,313
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
tr
VCE
IC
tf
VC (100%) =
I C (100%) =
tf =
350
20
V
VC (100%) =
I C (100%) =
350
20
V
A
A
0,105
μs
tr
=
0,021
μs
Copyright Vincotech
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18 Jun. 2019 / Revision 2
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10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switching Characteristics
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Qr
Erec
tErec
IF
Prec
I F (100%) =
Q r (100%) =
20
A
P rec (100%) =
Erec (100%) =
7,03
kW
mJ
μs
1,20
0,23
μC
μs
0,20
0,23
tQr
=
tErec =
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
Tj:
125 °C
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
350
±15
16
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
R gon
Copyright Vincotech
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18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
±15
16
°C
V
Tj =
150
350
±15
30
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
VGE
R gon
=
=
VGE
I C
=
±15
Tj:
Tj:
=
30
Copyright Vincotech
38
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
25 °C
350
At
VCE
VGE
R gon
=
V
V
Ω
At
VCE
VGE
I C
=
V
V
A
25 °C
125 °C
150 °C
=
±15
125 °C
=
±15
Tj:
Tj:
=
16
150 °C
=
30
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
350
25 °C
At
VCE
=
V
V
Ω
At
VCE
VGE
I C
=
V
V
A
25 °C
VGE
=
=
±15
125 °C
=
±15
125 °C
Tj:
Tj:
R gon
16
150 °C
=
30
150 °C
Copyright Vincotech
39
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
30
V
V
A
25 °C
VGE
R gon
=
=
=
125 °C
Tj:
Tj:
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
40
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switching Definitions
General conditions
T j
R gon
=
=
=
125 °C
16 Ω
16 Ω
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
30
V
350
30
V
A
A
tdoff
tEoff
=
=
0,106
0,217
μs
μs
tdon
tEon
=
=
0,066
0,151
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
VCE
tr
IC
tf
VC (100%) =
I C (100%) =
tf =
350
30
V
VC (100%) =
I C (100%) =
350
30
V
A
A
0,033
μs
tr
=
0,009
μs
Copyright Vincotech
41
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switching Characteristics
Copyright Vincotech
42
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Input Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
IF
Qr
tErec
Prec
I F (100%) =
Q r (100%) =
30
A
P rec (100%) =
Erec (100%) =
10,59
0,43
0,17
kW
mJ
μs
1,71
0,17
μC
μs
tQr
=
tErec =
Copyright Vincotech
43
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm 2clips housing with Solder pins
with thermal paste 12mm 2 clips housing with Solder pins
Ordering Code
10-FZ07BVA030S5-LD45E08
10-FZ07BVA030S5-LD45E08-/3/
10-PC07BVA030S5-LD45E06Y
10-PC07BVA030S5-LD45E06Y-/3/
without thermal paste 12mm housing without clips with Pressfit pins
with thermal paste 12mm housing without clips with Pressfit pins
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
Function
G13
28,7
25,9
23,1
17,6
12,1
9,3
2,8
0
1
2
0
S13
DC-2
DC+
3
4
0
0
5
0
S14
6
0
G14
7
0
G25
8
0
S25
9
0
5,05
DC-Boost
10
0
10,55 DC+Boost
11
12
13
0
0
9,3
16,15
22,6
22,6
DC+In
Boost+
G12
14
15
16
17
18
19
20
21
22
12,1
17,6
23,1
25,9
28,7
22,6
22,6
22,6
22,6
22,6
S12
DC+
DC-1
S11
G11
Not assembled
33,6
33,6
14,55
8,05
G21
G22
Not assembled
23
24
25
26
27
28
29
30
33,6
30,8
33,6
30,8
17,6
11
17,35
14,55
5,25
8,05
14,1
8,5
Ph1
S21
Ph2
S22
A20
Therm1
Therm2
10
11,5
Not assembled
Copyright Vincotech
44
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T13, T12, T14
IGBT
650 V
30 A
20 A
20 A
20 A
30 A
30 A
10 A
35 A
Low Buck Switch / High Buck Switch
Buck Diode
D21, D22
FWD
IGBT
650 V
650 V
650 V
650 V
650 V
650 V
1600 V
T21, T22
Boost Switch
D20, D12, D14
FWD
High Boost Diode / Low Boost Diode
Input Boost Switch
T25
D25
D45
D26
Rt
IGBT
FWD
Input Boost Diode
FWD
Input Boost Sw. Protection Diode
ByPass Diode
Rectifier
NTC
Thermistor
Copyright Vincotech
45
18 Jun. 2019 / Revision 2
10-FZ07BVA030S5-LD45E08
10-PC07BVA030S5-LD45E06Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xx07BVA030S5-LD45E0xX-D2-14
18 Jun. 2019
Add new subtype with housing without clips and Pressfit pin
1,44
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
46
18 Jun. 2019 / Revision 2
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