10-FZ122PB075SC-M818F08 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-FZ122PB075SC-M818F08 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总15页 (文件大小：662K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ122PB075SC-M818F08
datasheet
flow PHASE 0
1200 V / 75 A
Features
flow 0 housing
● Trench Fieldstop IGBT4 technology
● 2-clip housing in 12mm height
● Compact and low inductance design
Target Applications
Schematic
● Motor Drive
● UPS
Types
●10-FZ122PB075SC-M818F08
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter IGBT
V CE
I C
Collector-emitter break down voltage
1200
V
A
T s = 80 °C
T c = 80 °C
59
75
T j=T jmax
DC collector current
I CRM
t p limited by T jmax
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
225
150
A
V CE ≤ 1200V, T j ≤ T op max
T j=T jmax
A
T s = 80 °C
T c = 80 °C
126
191
P tot
V GE
W
V
±20
t SC
V CC
T j≤150°C
V GE=15V
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
Inverter FWD
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
V
A
T s = 80 °C
T c = 80 °C
55
74
T j=T jmax
DC forward current
t p limited by T jmax
T j=T jmax
Repetitive peak forward current
Power dissipation per Diode
Drain to source breakdown voltage
150
A
T s = 80 °C
T c = 80 °C
85
W
°C
128
T jmax
175
copyright Vincotech
1
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Thermal Properties
Storage temperature
T stg
T op
-40…+125
°C
°C
-40…+(T jmax - 25)
Operation temperature under switching condition
Insulation Properties
Insulation voltage
V is
t = 2 s
DC voltage
4000
min 12,7
9,12
V
Creepage distance
Clearance
mm
mm
copyright Vincotech
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28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
I C [A]
or
V GE [V]
or
V CE [V] I F [A]
T j [°C]
or
Min
Max
V GS [V]
or or
V DS [V] I D [A]
Inverter IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
25
150
25
150
25
150
25
5
5,8
6,5
2,3
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,003
V
V
1,5
1,94
2,38
15
0
75
0,03
700
1200
0
mA
nA
Ω
20
150
10
25
150
25
150
25
150
25
150
25
150
25
178
196
34
Rise time
36
ns
284
373
63
124
6,17
9,39
4,01
6,99
t d(off)
t f
Turn-off delay time
R goff = 4 Ω
R gon = 4 Ω
±15
600
75
Fall time
E on
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
E off
C ies
C oss
C rss
Q G
150
4400
290
235
290
Output capacitance
f = 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
K/W
R th(j-s)
Thermal resistance chip to heatsink
0,75
Inverter FWD
25
150
25
150
25
150
25
150
25
150
25
1
1,78
1,72
69,44
86,2
275,1
457
6,62
14,08
1859
724
2,3
V F
I RRM
Diode forward voltage
75
75
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
Q rr
R gon = 4 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
600
µC
( di rf/dt )max
E rec
A/µs
mWs
2,29
5,22
150
Thermal grease
thickness≤50um
λ = 1 W/mK
K/W
R th(j-s)
Thermal resistance chip to heatsink
1,12
Thermistor
Rated resistance
Deviation of R 100
R
25
22
kΩ
%
ΔR/R
R 100 = 1484 Ω
100
25
-5
5
Power dissipation
P
5
mW
mW/K
Power dissipation constant
25
1,5
B(25/50)
B-value
Tol. ±1 %
Tol. ±1 %
25
25
3962
4000
K
K
B(25/100)
B-value
Vincotech NTC Reference
I
copyright Vincotech
3
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Output Inverter
figure 1.
Output inverter IGBT
figure 2.
Output inverter IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
200
200
160
120
80
160
120
80
40
40
0
0
0
0
V
CE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
t p
=
t p =
350
25
μs
°C
350
150
μs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
Output inverter IGBT
figure 4.
Output inverter FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
75
250
200
150
100
50
Tj = 25°C
60
45
30
15
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
VGE (V)
VF (V)
3,6
2
4
6
8
10
12
0
0,6
1,2
1,8
2,4
3
At
At
t p
=
t p
=
350
10
μs
V
350
μs
V CE
=
copyright Vincotech
4
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Output Inverter
figure 5.
Output inverter IGBT
figure 6.
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
25
20
15
10
5
25
20
15
10
5
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff Low T
Eoff High T
Eoff Low T
0
0
I C (A)
R G ( Ω )
0
25
50
75
100
125
150
0
4
8
12
16
20
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/150
600
±15
4
25/150
600
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
75
V
=
I C =
Ω
Ω
A
=
4
figure 7.
Output inverter IGBT
figure 8.
Output inverter IGBT
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
8
8
Erec
6
6
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Erec
4
2
0
4
Tj = 25°C
Erec
Tj = 25°C
Erec
2
0
I C (A)
R G ( Ω )
0
25
50
75
100
125
150
0
4
8
12
16
20
With an inductive load at
With an inductive load at
T j =
T j =
25/150
600
±15
4
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
V
±15
75
V
=
I C =
Ω
A
copyright Vincotech
5
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Output Inverter
figure 9.
Output inverter IGBT
figure 10.
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdoff
tdoff
tdon
tdon
tf
tf
tr
0,1
0,1
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
25
50
75
100
125
150
0
4
8
12
16
20
With an inductive load at
With an inductive load at
T j =
T j =
150
600
±15
4
°C
V
150
600
±15
75
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
4
figure 11.
Output inverter FWD
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
t rr = f(R gon
)
0,7
0,7
0,6
0,6
trr
trr
Tj = Tjmax -25°C
0,5
0,4
0,3
0,2
0,1
0
0,5
Tj = Tjmax -25°C
0,4
0,3
trr
trr
Tj = 25°C
0,2
Tj = 25°C
0,1
0
I
C (A)
150
0
4
8
12
16
R g on ( Ω ) 20
0
25
50
75
100
125
At
T j =
At
T j =
V R =
I F =
25/150
600
±15
4
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
V
75
A
=
V GE =
Ω
±15
V
copyright Vincotech
6
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Output Inverter
figure 13.
Output inverter FWD
figure 14.
Output inverter FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
25
20
Qrr
20
16
12
8
Tj = Tjmax -25°C
Qrr
Tj = Tjmax -25°C
15
Tj = 25°C
10
Qrr
Qrr
5
4
Tj = 25°C
0
0
0
I
C (A)
R g on ( Ω)
0
25
50
75
100
125
150
4
8
12
16
20
At
At
T j =
T j =
V R =
I F =
25/150
600
±15
4
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
V
75
A
=
V GE =
Ω
±15
V
figure 15.
Output inverter FWD
figure 16.
Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
I RRM = f(R gon
)
150
120
120
Tj = Tjmax - 25°C
90
60
IRRM
90
Tj = Tjmax -25°C
IRRM
IRRM
Tj = 25°C
60
IRRM
Tj = 25°C
30
30
0
0
I C (A)
R gon ( Ω )
0
25
50
75
100
125
150
0
4
8
12
16
20
At
At
T j =
T j =
V R =
I F =
25/150
600
±15
4
°C
V
25/150
600
°C
V
V CE
V GE
=
=
V
75
A
R gon
=
V GE =
Ω
±15
V
copyright Vincotech
7
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Output Inverter
figure 17.
Output inverter FWD
figure 18.
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
4000
4000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIo/dtLow T
dIrec/dt
dIrec/dt
3200
2400
1600
800
0
3200
2400
1600
800
0
Tj = 25°C
di0/dtHigh T
Tj = Tjmax - 25°C
dIrec/dtLow T
dIrec/dtHigh T
dIrec/dtHigh T
I
C (A)
R gon ( Ω )
0
25
50
75
100
125
150
0
4
8
12
16
20
At
T j =
At
T j =
V R =
I F =
25/150
600
±15
4
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
V
75
A
=
V GE =
Ω
±15
V
figure 19.
Output inverter IGBT
figure 20.
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
t
p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
0,75
K/W
1,12
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W) Tau (s)
0,05
0,17
0,39
0,11
0,02
0,02
4,2E+00
7,6E-01
1,7E-01
2,2E-02
2,2E-03
2,9E-04
0,03
0,17
0,57
0,24
0,07
0,04
9,3E+00
1,1E+00
1,8E-01
3,1E-02
5,5E-03
4,0E-04
copyright Vincotech
8
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Output Inverter
figure 21.
Output inverter IGBT
figure 22.
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
240
200
160
120
80
100
80
60
40
20
0
40
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
figure 23.
Power dissipation as a
Output inverter FWD
figure 24.
Forward current as a
Output inverter FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
180
150
120
90
90
75
60
45
30
15
0
60
30
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
°C
copyright Vincotech
9
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Output Inverter
figure 25.
Output inverter IGBT
figure 26.
Output inverter IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
V GE = f(Q GE)
103
16
14
12
10
8
100uS
1mS
240 V
10uS
102
101
100
960 V
100mS
DC
10mS
6
4
2
0
10-1
100
0
40
80
120
160
200
240
280
320
360
Q g (nC)
400
103
101
102
VCE (V)
At
At
D =
single pulse
I C
=
75
A
T h
V GE
T j =
=
80
ºC
=
±15
T jmax
V
Thermistor
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
45
65
85
105
125
T (°C)
copyright Vincotech
10
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Switching Definitions Output Inverter
General conditions
T j
=
=
=
150 °C
4 Ω
4 Ω
R gon
R goff
figure 1.
Output inverter IGBT
figure 2.
Output inverter IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
250
%
140
%
IC
tdoff
120
100
80
VCE
200
150
VGE 90%
VCE 90%
IC
VCE
60
100
tEoff
VGE
40
tdon
50
20
IC10%
VCE 3%
VGE
VGE10%
0
0
IC 1%
tEon
-20
-50
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
0,85
time(µs)
2,8
2,95
3,1
3,25
3,4
3,55
3,7
time(µs)
V GE (0%) =
-15
V
V GE (0%) =
-15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V
A
V GE (100%) =
V C (100%) =
I C (100%) =
V
600
75
600
75
V
A
t doff
=
=
0,37
0,78
μs
μs
t don
=
=
0,20
0,55
μs
μs
t E off
t E on
figure 3.
Output inverter IGBT
figure 4.
Output inverter IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
140
250
%
fitted
%
Ic
120
IC
VCE
200
100
80
60
40
20
0
IC 90%
150
VCE
IC
60%
100
IC90%
IC 40%
tr
50
IC10%
IC10%
0
tf
-20
-50
0,25
0,3
0,35
0,4
0,45
0,5
0,55
time(µs)
3
3,1
3,2
3,3
3,4
3,5
time(µs)
V C (100%) =
I C (100%) =
t f =
600
75
V
V C (100%) =
I C (100%) =
t r =
600
75
V
A
A
0,12
μs
0,04
μs
copyright Vincotech
11
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Switching Definitions Output Inverter
figure 5.
Output inverter IGBT
figure 6.
Output inverter IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
120
220
%
%
Poff
Eoff
Pon
100
170
120
70
80
60
Eon
40
20
VGE 10%
20
VGE 90%
VCE
3%
0
tEon
tEoff
IC 1%
0,8
-30
-20
-0,2
2,9
3,05
3,2
3,35
3,5
3,65
time(µs)
0
0,2
0,4
0,6
1
time(µs)
P off (100%) =
E off (100%) =
44,97
7,03
0,78
kW
mJ
μs
P on (100%) =
E on (100%) =
44,97
kW
mJ
μs
9,36
0,55
t E off
=
t E on =
figure 7.
Output inverter FWD
figure 8.
Output inverter IGBT
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of t rr
20
120
%
fitted
Id
15
10
5
80
trr
40
0
Vd
0
IRRM10%
-40
-5
-80
-10
-15
-20
IRRM90%
IRRM100%
-120
-160
3
3,2
3,4
3,6
3,8
4
-50
0
50
100
150
200
250
300
350
400
time(µs)
450
time(µs)
V GE off
V GE on
=
=
-15
V
V
V
A
V d (100%) =
I d (100%) =
I RRM (100%) =
600
75
V
15
A
V C (100%) =
I C (100%) =
600
75
-85
0,46
A
t rr
=
μs
Q g
=
6601,20 nC
copyright Vincotech
12
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Switching Definitions Output Inverter
figure 9.
Output inverter FWD
figure 10.
Output inverter FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
120
%
Erec
%
Qrr
100
100
Id
80
50
tQrr
tErec
60
40
20
0
0
-50
Prec
-100
-150
-20
3
3,3
3,6
3,9
4,2
4,5
time(µs)
3
3,3
3,6
3,9
4,2
4,5
time(µs)
I d (100%) =
Q rr (100%) =
75
A
P rec (100%) =
E rec (100%) =
44,97
kW
13,41
0,92
μC
μs
4,88
0,92
mJ
μs
t Q rr
=
t E rec =
copyright Vincotech
13
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste 12mm housing
10-FZ122PB075SC-M818F08
M818F08
M818F08
Outline
Pin table
Pin
X
Y
1
2
3
4
5
6
7
8
9
0
0
0
0
0
0
0
0
0
2,3
4,6
6,9
15,6
17,9
20,2
22,5
13,85 16,45
10 16,75 16,45
11 33,5 11,5
12 33,5
13 33,5
14 33,5
15 33,5
16 33,5
9,2
6,9
4,6
2,3
0
17 13,85 13,55
18 19,55 4,95
19 19,55 7,85
20 33,5 22,5
21 26,1 22,5
Pinout
copyright Vincotech
14
28 Feb. 2017 / Revision 3
10-FZ122PB075SC-M818F08
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
135
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ122PB075SC-M818F08-D3-14
28.febr.17
new brand
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
15
28 Feb. 2017 / Revision 3
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