10-FZ12PNA015M7-P840C28 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;型号: | 10-FZ12PNA015M7-P840C28 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
文件: | 总18页 (文件大小:1838K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FZ12PNA015M7-P840C28
datasheet
flow PIM 0
1200 V / 15 A
Features
flow 0 12 mm housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Builtin NTC
Schematic
Target applications
● Industrial Drives
Types
● 10-FZ12PNA015M7-P840C28
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1600
25
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
200
200
44
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum Junction Temperature
150
Copyright Vincotech
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10-FZ12PNA015M7-P840C28
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
15
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
30
A
60
W
V
±20
175
Maximum junction temperature
°C
Inverter Diode
Peak repetitive reverse voltage
VRRM
IF
IFRM
Ptot
1200
15
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
30
A
Tj = Tjmax
45
W
°C
Maximum junction temperature
Tjmax
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
9,29
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,22
1,21
1,8
Forward voltage
Reverse leakage current
Thermal
VF
Ir
25
V
125
25
50
1600
145
µA
1100
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0015 25
25
5,4
6
6,6
V
V
1,70
1,95
2,01
2,15
VCEsat
Collector-emitter saturation voltage
15
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
60
µA
nA
Ω
20
500
none
2900
120
34
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
15
110
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,60
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
150
176
174
43
48
191
218
119
127
1,548
2,008
0,925
1,322
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Rgoff = 32 Ω
Rgon = 32 Ω
ns
Turn-off delay time
Fall time
±15
600
15
Qr
Qr
= 1,5 μC
= 2,6 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
125
1,63
1,74
2,1
30
VF
IR
Forward voltage
Reverse leakage current
Thermal
15
V
1200
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,11
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
11
12
265
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
423
di/dt = 293 A/μs
di/dt = 244 A/μs
1,549
2,592
0,488
0,938
92
±15
600
15
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
52
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
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datasheet
Rectifier Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
tp / T
1,59
T j:
K/W
Diode thermal model values
R (K/W)
τ
(s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,22E-01
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
1,79E-03
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,60
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,90E-02
1,40E-01
8,04E-01
2,98E-01
1,69E-01
1,35E-01
4,40E+00
5,34E-01
8,02E-02
2,57E-02
5,09E-03
6,41E-04
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
Tj:
2,11
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,99E-02
4,04E-01
1,05E+00
3,39E-01
2,29E-01
2,33E+00
1,91E-01
4,49E-02
6,08E-03
1,02E-03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
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datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
32
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
±15
15
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
32
V
V
Ω
:
600
±15
15
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
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datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
32
°C
V
150
600
±15
15
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
At
VCE
=
600
±15
32
V
V
Ω
25 °C
150 °C
At
VCE
=
V
V
A
25 °C
150 °C
:
Tj
±15
15
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
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datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
600
V
V
Ω
25 °C
150 °C
V
V
A
25 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
±15
32
:
Tj
=
±15
15
:
Tj
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
600
V
V
Ω
25 °C
150 °C
At
VCE
=
600
±15
15
V
V
A
25 °C
150 °C
±15
32
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
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datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
At
VCE
=
600
±15
32
V
V
Ω
25 °C
150 °C
At
VCE
VGE
I C
=
600
±15
15
V
V
A
25 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
32
°C
Ω
R gon
R goff
=
=
32
Ω
Copyright Vincotech
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datasheet
Inverter Switching Definitions
General conditions
=
=
=
150 °C
32 Ω
T j
Rgon
R goff
32 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon
=
integrating time for Eon)
tdoff
IC
VCE
IC
VGE
tEoff
VCE
VGE
tEon
-15
VGE (0%) =
-15
15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
15
V
600
15
V
A
A
0,218
0,800
μs
μs
0,174
0,586
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
tr
VCE
IC
tf
600
V
600
15
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
15
A
A
0,127
μs
0,048
μs
tr
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Pon
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
9,24
1,32
0,80
kW
mJ
μs
P on (100%) =
Eon (100%) =
9,24
2,01
0,59
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
600
V
15
A
-12
0,423
A
μs
t rr
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
Erec
Qr
IF
tErec
Prec
15
A
9,24
0,94
2,00
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
2,59
2,00
μC
μs
t Qr
=
tErec =
Copyright Vincotech
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datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
Ordering Code
10-FZ12PNA015M7-P840C28
10-FZ12PNA015M7-P840C28-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
2,7
0
Function
Therm1
Therm2
DC-Rect
25,5
25,5
22,8
1
2
3
0
4
Not assembled
Not assembled
5
6
13,5
10,8
8,1
5,4
2,7
0
0
G15
7
0
DC-3
G13
8
0
9
0
DC-2
G11
10
11
12
13
14
15
16
17
18
19
0
0
DC-1
G12
Ph1
0
0
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
7,5
7,5
15
G14
Ph2
G16
15
Ph3
22,8
25,5
DC+Inv
DC+Rect
20
21
22
23
Not assembled
33,5
33,5
33,5
15
7,5
0
ACIn1
ACIn2
ACIn3
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datasheet
Pinout
Identification
ID
Component
Rectifier
IGBT
Voltage
1600 V
1200 V
1200 V
Current
Function
Comment
D31-D36
T11-T16
D11-D16
Rt
25 A
15 A
15 A
Rectifier Diode
Inverter Switch
Inverter Diode
Thermistor
FWD
NTC
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ12PNA015M7-P840C28-D1-14
26 Nov. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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相关型号:
10-P006PPA010SB-M683BY
Easy to use / drive;Extremly low losses;Very high commutation ruggedness
VINCOTECH
10-P006PPA010SB04-M683B30Y
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
10-P006PPA015SB03-M684B30Y
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
10-P006PPA020SB01-M685B10Y
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-P006PPA020SB02-M685B30Y
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
10-P006PPA020SB03-M685B09Y
Easy paralleling;Low turn-off losses;Positive temperature coefficient;Short tail current
VINCOTECH
10-P0122PB100SC02-M819F09Y
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-P0122PB100SC03-M819F19Y
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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