10-P006PPA010SB-M683BY [VINCOTECH]
Easy to use / drive;Extremly low losses;Very high commutation ruggedness;型号: | 10-P006PPA010SB-M683BY |
厂家: | VINCOTECH |
描述: | Easy to use / drive;Extremly low losses;Very high commutation ruggedness |
文件: | 总32页 (文件大小:13419K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-P006PPA010SB-M683BY
datasheet
flowPIM 0 + PFC
600 V / 10 A
Features
flow 0 17 mm housing
● Clip in PCB mounting
● Trench Fieldstop IGBT's for low saturation losses
● Latest generation superjunction MOSFET for PFC
● Integrated PFC shunt
● Temperature sensor
Schematic
Target applications
● Industrial Drives
● Embedded Drives
Types
● 10-P006PPA010SB-M683BY
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
17
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
44
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
17
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
32
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VDSS
Drain-source voltage
600
18
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
112
72
A
Ptot
Total power dissipation
Gate-source voltage
W
V
VGSS
±20
150
Tjmax
Maximum Junction Temperature
°C
Copyright Vincotech
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10-P006PPA010SB-M683BY
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
600
30
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
54
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
33
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
44
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
PFC Shunt
I
DC current
Tc = 70 °C
Tc = 70 °C
15
5
A
Ptot
Power dissipation
W
Capacitor (PFC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
min. 12,7
min. 12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00015 25
5
5,8
6,5
V
V
25
10
1,1
1,59
1,78
1,9(1)
15
0
125
600
0
25
25
0,6
µA
nA
Ω
20
300
None
551
40
Cies
pF
pF
pF
Coes
Cres
Output capacitance
f = 1 Mhz
0
25
25
Reverse transfer capacitance
17
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,15
K/W
25
75,2
74,4
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
23,8
tr
125
25
25,8
Rgon = 32 Ω
Rgoff = 32 Ω
136
td(off)
Turn-off delay time
Fall time
ns
125
25
158,8
83,29
123,18
0,277
0,376
0,33
±15
400
10
tf
ns
125
25
QrFWD=0,466 µC
QrFWD=0,896 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
0,449
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,58
1,52
1,95(1)
27
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,99
K/W
25
5,13
6,56
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
193,87
269,56
0,466
0,896
0,132
0,255
21,2
trr
ns
125
25
di/dt=400 A/µs
di/dt=467 A/µs
Qr
±15
400
10
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
64,56
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
25
99
99(1)
rDS(on)
VGS(th)
IGSS
IDSS
rg
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0
18,1
mΩ
V
125
199
0,00121 25
2,4
3
3,6
100
5
20
0
0
25
25
nA
µA
Ω
600
1,6
119
2660
154
0,9
Qg
VDD = 480 V
f = 1 Mhz
0/10
18,1
0
25
25
25
nC
Ciss
Short-circuit input capacitance
Short-circuit output capacitance
Diode forward voltage
0
0
100
pF
V
Coss
VSD
18,1
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,97
K/W
25
19,8
22,8
4
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
4,2
Rgon = 8 Ω
Rgoff = 8 Ω
131,2
202,2
438
td(off)
Turn-off delay time
Fall time
ns
125
25
0/10
400
10
tf
ns
125
25
3,94
0,083
0,147
0,023
0,045
QrFWD=0,156 µC
QrFWD=0,493 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
2,84
1,81
3,2(1)
50
VF
IR
Forward voltage
Reverse leakage current
15
V
125
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,75
K/W
25
24,04
36,41
12,15
22,8
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
0,156
0,493
0,024
0,106
8698
6331
di/dt=2470 A/µs
di/dt=2378 A/µs
Qr
0/10
400
10
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
Rectifier Diode
Static
25
0,996
0,907
1,21(1)
1,1(1)
VF
IR
Forward voltage
8
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Shunt
Static
R
Resistance
20
50
mΩ
%
Tolerance
-1
1
Temperature coeficient
tc
ppm/K
Capacitor (PFC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
100
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0,0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
2,149
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,04E-01
2,88E-01
6,99E-01
4,91E-01
3,07E-01
2,60E-01
1,37E+00
2,01E-01
5,27E-02
1,22E-02
2,97E-03
3,80E-04
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,988
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,74E-02
2,41E-01
1,22E+00
6,89E-01
4,52E-01
2,99E-01
5,59E+00
4,60E-01
6,53E-02
2,20E-02
5,14E-03
1,11E-03
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datasheet
PFC Switch Characteristics
figure 8.
MOSFET
figure 9.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
40
40
VGS
:
-4 V
-2 V
0 V
30
20
2 V
30
20
10
0
4 V
6 V
8 V
10
10 V
12 V
14 V
16 V
18 V
20 V
0
-10
-20
-30
-40
0,0
2,5
5,0
7,5
10,0
12,5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
10
μs
V
250
125
μs
°C
25 °C
Tj:
VGS
Tj =
125 °C
VGS from -4 V to 20 V in steps of 2 V
figure 10.
MOSFET
figure 11.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
17,5
10
15,0
12,5
10,0
7,5
-1
10
-2
10
0,5
5,0
0,2
0,1
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
1
2
3
4
5
6
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,966
25 °C
Tj:
VDS
125 °C
Rth(j-s) =
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,06E-01
2,45E-01
1,88E-01
2,87E-01
7,02E-02
7,08E-02
3,76E+00
7,23E-01
1,99E-01
1,89E-02
3,22E-03
6,83E-04
Copyright Vincotech
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datasheet
PFC Switch Characteristics
figure 12.
MOSFET
figure 13.
MOSFET
Safe operating area
Gate voltage vs gate charge
ID = f(VDS
)
VGS = f(Qg)
1000
12
10
8
100
10
6
1
4
0,1
0,01
2
0
1
10
100
1000
10000
0
25
50
75
100
125
V
DS(V)
Qg(μC)
D =
ID
=
single pulse
18.1
25
A
Ts =
Tj =
80
10
°C
V
°C
VGS
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
PFC Diode Characteristics
figure 14.
FWD
figure 15.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,75
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
4,94E-02
1,24E-01
7,20E-01
4,86E-01
1,96E-01
1,76E-01
4,26E+00
5,74E-01
9,35E-02
3,37E-02
5,13E-03
1,19E-03
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datasheet
Rectifier Diode Characteristics
figure 16.
Rectifier
figure 17.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,594
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 18.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 19.
IGBT
figure 20.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
Ω
125 °C
400
±15
10
V
V
A
125 °C
Rgon
Rgoff
32
figure 21.
FWD
figure 22.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
125 °C
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
Inverter Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
-1
10
tr
td(off)
tf
td(on)
-1
10
-2
10
tr
-2
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
±15
32
°C
V
125
400
±15
10
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 25.
FWD
figure 26.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
R
goff(Ω)
25 °C
125 °C
With an inductive load at
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
Inverter Switching Characteristics
figure 27.
FWD
figure 28.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
125 °C
figure 29.
FWD
figure 30.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
8
7
6
5
4
3
2
1
0
20,0
17,5
15,0
12,5
10,0
7,5
IRM
IRM
5,0
IRM
IRM
2,5
0,0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
125 °C
Copyright Vincotech
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10-P006PPA010SB-M683BY
datasheet
Inverter Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
600
1750
1500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
500
400
300
200
100
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
125 °C
figure 33.
IGBT
Reverse bias safe operating area
IC = f(VCE
22,5
)
IC MAX
20,0
17,5
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
125
32
°C
Rgon
Rgoff
=
=
Ω
Ω
32
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10-P006PPA010SB-M683BY
datasheet
PFC Switching Characteristics
figure 34.
MOSFET
figure 35.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
ID(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
8
V
V
Ω
Ω
125 °C
400
0/10
10
V
V
A
125 °C
Rgon
Rgoff
8
figure 36.
FWD
figure 37.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
ID(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
8
V
V
Ω
125 °C
400
0/10
10
V
V
A
125 °C
Rgon
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
PFC Switching Characteristics
figure 38.
MOSFET
figure 39.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
td(on)
tr
tf
-2
10
-2
10
tr
tf
-3
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
ID(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
0/10
8
°C
V
125
400
0/10
10
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
8
figure 40.
FWD
figure 41.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
5
10
15
20
25
30
35
ID(A)
Rgoff(Ω)
VDS
VGS
=
VDS
VGS
ID
=
=
=
At
400
0/10
8
V
V
Ω
At
400
0/10
10
V
V
A
25 °C
25 °C
Tj:
Tj:
=
=
125 °C
125 °C
Rgon
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
PFC Switching Characteristics
figure 42.
FWD
figure 43.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
5
10
15
20
25
30
35
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
V
V
Ω
At
400
0/10
10
V
25 °C
25 °C
Tj:
Tj:
0/10
8
125 °C
V
A
125 °C
Rgon
figure 44.
FWD
figure 45.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
50
40
30
20
10
0
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
5
10
15
20
25
30
35
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
V
V
Ω
At
400
0/10
10
V
25 °C
25 °C
Tj:
Tj:
0/10
8
125 °C
V
A
125 °C
Rgon
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
PFC Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
15000
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
12500
10000
7500
5000
2500
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
5
10
15
20
25
30
35
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
8
V
V
Ω
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
0/10
10
125 °C
Rgon
figure 48.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
40
ID MAX
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
125
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
Inverter Switching Definitions
figure 49.
IGBT
figure 50.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
Inverter Switching Definitions
figure 53.
FWD
figure 54.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
PFC Switching Definitions
figure 49.
MOSFET
figure 50.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 51.
MOSFET
figure 52.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
PFC Switching Definitions
figure 53.
FWD
figure 54.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 55.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-P006PPA010SB-M683BY
10-P006PPA010SB-M683BY-/7/
10-P006PPA010SB-M683BY-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-
PFC-
S1
33,5
30,7
28
2
0
3
0
4
25,3
22,6
19,9
17,2
13,5
10,8
8,1
5,4
2,7
0
0
S2
5
0
INV-
G7
6
0
7
0
S7
8
0
G6
9
0
E6
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
0
G5
0
E5
0
G4
0
E4
0
8,6
11,45
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
22,5
22,5
15
NTC1
NTC2
G1
0
0
0
U
6
G2
6
V
12
G3
12
W
17,7
20,5
26,5
33,5
33,5
33,5
+INV
PFC+
PFC IN
DC+
L1
7,5
L2
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
Pinout
DC+
25
PFC IN PFC+
24 23
+INV
22
T3
T2
T1
D3
D2
D1
D9
D8
D7
G3
20
G2
18
G1
16
W
C1
L1
26
21
V
19
L2
27
U
17
T7
D11
D10
G7
6
T6
T5
T4
D6
D5
D4
S7
7
G6
8
G5
10
G4
12
NTC
R1
DC-
1
INV- S2
S1 PFC-
E6
9
E5
11
E4
13
NTC1
14
NTC2
15
5
4
3
2
Identification
Component
Voltage
Current
Function
Comment
ID
T6, T3, T5, T2, T4, T1
IGBT
600 V
10 A
Inverter Switch
D3, D6, D2, D5, D1,
FWD
600 V
10 A
Inverter Diode
D4
T7
MOSFET
FWD
600 V
600 V
90 mΩ
15 A
PFC Switch
PFC Diode
D7
D11, D9, D10, D8
Rectifier
Shunt
1600 V
25 A
Rectifier Diode
PFC Shunt
R1
C1
Capacitor
Thermistor
500 V
Capacitor (PFC)
Thermistor
NTC
Copyright Vincotech
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30 Sep. 2021 / Revision 5
10-P006PPA010SB-M683BY
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Update dynamic characteristic of PFC
10-P006PPA010SB-M683BY-D5-14
30 Sep. 2021
Separate datasheet for pressfit pin and 4T12 version
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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30 Sep. 2021 / Revision 5
相关型号:
10-P006PPA010SB04-M683B30Y
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
10-P006PPA015SB03-M684B30Y
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
10-P006PPA020SB01-M685B10Y
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-P006PPA020SB02-M685B30Y
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
10-P006PPA020SB03-M685B09Y
Easy paralleling;Low turn-off losses;Positive temperature coefficient;Short tail current
VINCOTECH
10-P0122PB100SC02-M819F09Y
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-P0122PB100SC03-M819F19Y
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-P012PMA010M7-P849A29Y
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-P106PPA050SJ-PD54B09Y
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-P107NIB150SG06-M136F39Y
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
VINCOTECH
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