10-PG06PPA030SJ02-LH92E08T [VINCOTECH]
5us short circuit withstand time;High speed switching;Low EMI;Short tail current;型号: | 10-PG06PPA030SJ02-LH92E08T |
厂家: | VINCOTECH |
描述: | 5us short circuit withstand time;High speed switching;Low EMI;Short tail current |
文件: | 总29页 (文件大小:9052K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-PG06PPA030SJ02-LH92E08T
datasheet
flowPIM 1 + PFC
600 V / 30 A
Features
flow 1 12 mm housing
● Highly integrated PIM with interleaved PFC circuit
● High switching frequency PFC circuit
● On-board capacitors
● New generation high speed IGBTs in the inverter
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-PG06PPA030SJ02-LH92E08T
Copyright Vincotech
1
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
30
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
Ptot
63
W
V
VGES
±20
5
tSC
Short circuit ratings
VGE = 15 V, VCC = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
28
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
50
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
Collector-emitter voltage
650
27
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
56
W
V
VGES
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
650
25
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
48
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
8
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
12
38
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Capacitor (PFC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
8,05
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
3
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
30
25
4,1
5,1
5,7
1,8
V
V
25
1,73
1,97
2,01
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
25
1,6
µA
nA
Ω
20
100
None
1050
45
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
36
VCC = 480 V
15
30
130
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,52
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
37
38
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
38
12
tr
125
150
25
13
15
Rgon = 8 Ω
Rgoff = 8 Ω
90
td(off)
Turn-off delay time
Fall time
125
150
25
109
113
12
ns
±15
350
30
tf
125
150
25
19,35
23,06
0,758
0,981
1,04
0,233
0,422
0,469
ns
QrFWD=0,812 µC
QrFWD=1,81 µC
QrFWD=2,02 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,71
1,58
1,95
27
VF
IR
Forward voltage
20
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,91
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
7,86
12,39
13,22
200,95
276,23
327,76
0,812
1,81
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=500 A/µs
di/dt=1295 A/µs
di/dt=1294 A/µs
Qr
Recovered charge
±15
350
30
125
150
25
μC
2,02
0,161
0,388
0,431
53,57
61,27
82,45
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
5
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0002
20
25
3,3
4
4,7
V
V
25
1,54
1,69
1,74
2,22
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
None
1200
30
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
5
VCC = 520 V
15
20
48
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,7
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
17
19
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
13
9
tr
125
150
25
11
9
Rgon = 16 Ω
Rgoff = 16 Ω
99
td(off)
Turn-off delay time
Fall time
125
150
25
115
120
8,08
13,64
10,32
0,315
0,36
0,47
0,064
0,146
0,11
ns
0/15
400
20
tf
125
150
25
ns
QrFWD=0,307 µC
QrFWD=0,491 µC
QrFWD=0,612 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,82
1,8
2,22
1,28
VF
IR
Forward voltage
20
125
150
V
1,76
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,96
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
15,35
19,92
24
IRRM
Peak recovery current
125
150
25
A
32,73
40,14
41,74
0,307
0,491
0,612
0,06
trr
Reverse recovery time
125
150
25
ns
di/dt=2664 A/µs
di/dt=2094 A/µs
di/dt=2443 A/µs
Qr
Recovered charge
0/15
400
20
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,109
0,097
848,64
985,81
965,97
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
7
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Protection Diode
Static
25
1,23
1,72
1,58
1,53
1,87
0,1
VF
IR
Forward voltage
6
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
2,53
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Capacitor (PFC)
Static
C
Capacitance
Tolerance
33
nF
%
-5
5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
Copyright Vincotech
8
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
80
80
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
60
40
20
60
40
20
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
30
10
25
20
15
10
5
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,52
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,77E-01
6,88E-01
3,07E-01
2,02E-01
6,94E-02
7,56E-02
4,26E-01
7,72E-02
2,26E-02
5,04E-03
7,36E-04
2,30E-04
Copyright Vincotech
9
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,914
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,07E-02
2,18E-01
8,50E-01
4,32E-01
2,00E-01
1,34E-01
2,21E+00
2,22E-01
4,41E-02
9,35E-03
1,60E-03
2,12E-04
Copyright Vincotech
11
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
PFC Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
0
50
40
30
20
10
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
20
10
0
15
10
5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,698
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,45E-01
5,50E-01
5,51E-01
3,26E-01
1,26E-01
7,07E-01
8,69E-02
2,05E-02
4,56E-03
6,55E-04
Copyright Vincotech
12
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
PFC Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
PFC Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,964
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,07E-01
3,62E-01
7,68E-01
5,43E-01
1,84E-01
1,92E+00
1,49E-01
4,26E-02
7,00E-03
1,27E-03
Copyright Vincotech
14
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
PFC Sw. Protection Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
17,5
15,0
12,5
10,0
7,5
10
0
10
-1
10
0,5
0,2
0,1
5,0
0,05
0,02
0,01
0,005
0
2,5
-2
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,527
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,24E-02
1,75E-01
7,31E-01
7,14E-01
4,89E-01
3,27E-01
9,29E+00
3,21E-01
4,97E-02
1,16E-02
2,11E-03
3,78E-04
Copyright Vincotech
15
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tr
-1
10
-2
10
-3
10
td(off)
-1
10
-2
10
-3
10
td(on)
tr
tf
tf
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
V
150
350
±15
30
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
40
35
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
19
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
6000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
70
IC MAX
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
20
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
PFC Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
PFC Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tr
td(on)
tf
tr
tf
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
16
°C
V
150
400
0/15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
PFC Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
PFC Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
3500
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
16
Ω
Ω
Copyright Vincotech
24
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PG06PPA030SJ02-LH92E08T
10-PG06PPA030SJ02-LH92E08T-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+Inv
DC+Inv
Ph3
52,5
52,5
46,2
43,5
43,5
37,2
34,5
34,5
28,2
25,5
22,5
0
2,7
0
2
3
0
4
0
Ph3
5
3
G16
6
0
Ph2
7
0
Ph2
8
3
G14
9
0
Ph1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
Ph1
0
G12
0
PFC1
PFC2
0
6,1
not assembled
not assembled
8,3
25,5
25,5
S25
G25
11,3
not assembled
not assembled
22,5
0
G29
S29
0
25,5
0
28,5
28,5
25,8
28,5
16,5
PFC-3
PFC-3
PFC+
PFC+
S27
2,7
9,8
9,8
20,7
20,7
16,9
16,9
20,7
23,4
22
G27
19,5
23,5
PFC-2
PFC-2
PFC-1
PFC-1
Therm1
Therm2
26,5
28,5
28,5
25,5
32
22
22,5
not assembled
33
34
35
36
37
38
39
40
41
42
33,5
33,5
33,5
28,5
25,5
22,5
DC-1
DC-1
G11
not assembled
28,5
25,5
22,5
not assembled
43
43
43
DC-2
DC-2
G13
43
44
45
46
52,5
52,5
52,5
0
28,5
25,5
22,5
12,2
DC-3
DC-3
G15
PFC3
Copyright Vincotech
27
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Pinout
24,25
PFC+
1,2
DC+Inv
T12
T14
T16
D11
G14
D13
G16
D15
D27
C27
D29
C29
D25
C25
G12
11
8
5
Ph1
9,10
PFC2
PFC3
PFC1
Ph2
Ph3
6,7
3,4
13
46
12
T27
27
T29
20
T25
17
T11
T13
T15
D12
G13
D14
G15
D16
G11
G27
S27
G29
S29
G25
S25
D47
D49
D45
37
41
45
26
21
16
DC-1
35,36
DC-2
39,40
DC-3
43,44
PFC-2
PFC-3
22,23
PFC-1
30,31
28,29
Rt
Therm1 Therm2
32 33
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
30 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
600 V
20 A
T25, T27, T29
D25, D27, D29
D45, D47, D49
C25, C27, C29
Rt
IGBT
FWD
650 V
650 V
650 V
630 V
20 A
20 A
6 A
PFC Switch
PFC Diode
FWD
PFC Sw. Protection Diode
Capacitor (PFC)
Thermistor
Capacitor
Thermistor
Copyright Vincotech
28
20 Mar. 2020 / Revision 1
10-PG06PPA030SJ02-LH92E08T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PG06PPA030SJ02-LH92E08T-D1-14
20 Mar. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20 Mar. 2020 / Revision 1
29
相关型号:
10-PG06PPA030SJ04-LJ02B03T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA050SJ-LJ04B08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA050SJ01-LH54E08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA050SJ02-LH94E08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG07N3A030S5-M894F96T
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-PG07N3A050S5-M896F96T
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-PG07ORA160RF-LJ53I88T
Low diode recovery losses;Low reverse recovery time and recovery charge;Designed for high switching frequency
VINCOTECH
10-PG126PA010MR-L820F88T
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
10-PG12APA015SH01-PB18E08T
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
©2020 ICPDF网 联系我们和版权申明