10-PG07N3A030S5-M894F96T [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-PG07N3A030S5-M894F96T |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总32页 (文件大小：3886K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PG07N3A030S5-M894F96T
datasheet
flow3xNPC 1
1200 V / 30 A
Features
flow 1 12 mm housing
● Four quadrant operation
● Enhanced thermal performance
● Fast switching IGBTs
Schematic
Target applications
● Solar Inverters
Types
● 10-PG07N3A030S5-M894F96T
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
35
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
61
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
37
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
60
A
57
W
°C
Tjmax
Maximum Junction Temperature
175
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
35
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
61
W
V
±20
175
Maximum junction temperature
°C
Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
37
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
60
A
57
W
°C
Tjmax
Maximum Junction Temperature
175
Boost Sw.Inv.Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
37
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
60
A
57
W
°C
Tjmax
Maximum Junction Temperature
175
Copyright Vincotech
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04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
9,4
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0003 25
25
3,2
4
4,8
V
V
1,35
1,54
1,57
1,75
VCEsat
Collector-emitter saturation voltage
15
30
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
1800
55
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
7
15
520
30
70
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,55
K/W
Dynamic
25
70
70
70
td(on)
125
150
25
Turn-on delay time
8
tr
Rise time
125
150
25
9
10
86
Rgoff = 16 Ω
Rgon = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
104
107
13
15
21
0,397
0,505
0,639
0,224
0,363
0,374
±15
350
30
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 1,1 μC
= 1,9 μC
= 2,1 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
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04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,52
1,46
1,44
1,92
1,6
VF
Ir
125
150
Forward voltage
30
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,68
K/W
Dynamic
25
48
63
61
IRRM
125
150
25
Peak recovery current
A
52
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
66
74
ns
di/dt = 5071 A/μs
di/dt = 4912 A/μs
di/dt = 4100 A/μs
1,06
1,91
2,10
0,220
0,437
0,508
3847
3784
3030
±15
350
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
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04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0003 25
25
3,2
4
4,8
V
V
1,35
1,54
1,57
1,75
VCEsat
Collector-emitter saturation voltage
15
30
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
1800
55
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
7
15
520
30
70
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,55
K/W
Dynamic
25
70
69
64
td(on)
125
150
25
Turn-on delay time
8
tr
Rise time
125
150
25
10
11
91
Rgoff = 16 Ω
Rgon = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
109
115
14
27
45
0,293
0,364
0,393
0,287
0,449
0,504
±15
350
30
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 1 μC
= 1,7 μC
= 2 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
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04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1,52
1,46
1,44
1,92
1,6
VF
Ir
125
150
Forward voltage
30
V
Reverse leakage current
650
350
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,68
K/W
Dynamic
25
27
36
39
61
95
104
0,968
1,73
2,00
0,249
0,460
0,540
287
267
272
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
trr
Qr
Reverse recovery time
ns
di/dt = 4111 A/μs
di/dt = 3494 A/μs
di/dt = 3415 A/μs
±15
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
Boost Sw.Inv.Diode
Static
25
1,52
1,46
1,44
1,92
1,6
VF
Ir
125
150
Forward voltage
30
V
Reverse leakage current
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,68
K/W
Copyright Vincotech
7
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
8
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7
V
V
V
I
I
8
9
80
60
40
20
0
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
80
60
40
20
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
30
I
25
Z
100
20
15
10
5
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
1
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
3
4
5
6
7
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,55
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,59E-01
1,99E-01
6,35E-01
2,87E-01
1,19E-01
1,51E-01
1,52E+00
2,30E-01
4,33E-02
1,21E-02
2,99E-03
4,74E-04
Copyright Vincotech
9
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
IC = f(VCE)
15
100
130 V
V
I
12,5
10
520 V
10
7,5
5
1
0,1
2,5
0
0
0,01
1
10
20
30
40
50
60
70
QG (nC)
10
100
1000
VC E (V)
D =
single pulse
80 ºC
IC
=
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
10
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Diode Characteristics
figure 1.
Inverse Diode
figure 2.
Inverse Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
100
80
60
40
20
0
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,68
T j:
=
K/W
Inverse Diode thermal model values
R (K/W)
τ (s)
1,73E-01
6,00E-01
5,23E-01
2,23E-01
1,59E-01
2,27E+00
1,18E-01
3,14E-02
1,59E-02
6,69E-03
Copyright Vincotech
11
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7
V
V
V
I
I
8
9
80
60
40
20
0
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
80
60
40
20
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
30
I
25
Z
100
20
15
10
5
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
1
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
3
4
5
6
7
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,55
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,59E-01
1,99E-01
6,35E-01
2,87E-01
1,19E-01
1,51E-01
1,52E+00
2,30E-01
4,33E-02
1,21E-02
2,99E-03
4,74E-04
Copyright Vincotech
12
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
IC = f(VCE)
15
100
130 V
V
I
12,5
10
520 V
10
7,5
5
1
0,1
2,5
0
0
0,01
1
10
20
30
40
50
60
70
QG (nC)
10
100
1000
VC E (V)
D =
single pulse
80 ºC
IC
=
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
13
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Diode Characteristics
figure 1.
Inverse Diode
figure 2.
Inverse Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
100
80
60
40
20
0
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,68
T j:
=
K/W
Inverse Diode thermal model values
R (K/W)
τ (s)
1,73E-01
6,00E-01
5,23E-01
2,23E-01
1,59E-01
2,27E+00
1,18E-01
3,14E-02
1,59E-02
6,69E-03
Copyright Vincotech
14
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Sw.Inv.Diode Characteristics
figure 1.
Inverse Diode
figure 2.
Inverse Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
100
80
60
40
20
0
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,68
T j:
=
K/W
Inverse Diode thermal model values
R (K/W)
τ (s)
1,73E-01
6,00E-01
5,23E-01
2,23E-01
1,59E-01
2,27E+00
1,18E-01
3,14E-02
1,59E-02
6,69E-03
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
15
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(IC
)
1,2
1,2
Eon
Eon
E
E
1
1
Eon
0,8
0,6
0,4
0,2
0
0,8
0,6
0,4
0,2
0
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
0
15
30
45
60
75
Rg (Ω)
IC (A)
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
Tj:
VCE
VGE
IC
=
=
=
350
±15
30
V
V
A
Tj:
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(Ic)
Erec = f(R g)
0,75
1
E
E
0,6
0,8
Erec
Erec
0,45
0,3
0,15
0
0,6
0,4
0,2
0
Erec
Erec
Erec
Erec
0
15
30
45
60
75
0
10
20
30
40
50
60
IC (A)
Rg (Ω)
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
350
±15
16
V
V
Ω
Tj:
VCE
VGE
IC
=
=
=
350
±15
30
V
V
A
Tj:
R gon
Copyright Vincotech
16
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC
)
t = f(R g)
1
1
t
t
td(on)
td(off)
td(off)
0,1
0,1
td(on)
tf
tf
tr
tr
0,01
0,01
0,001
0,001
0
15
30
45
60
75
0
10
20
30
40
50
60
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
350
±15
16
°C
V
Tj =
150
350
±15
30
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
IC
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC
)
trr = f(R gon
)
0,12
0,15
t
t
trr
trr
trr
0,12
0,09
trr
trr
0,09
0,06
0,03
trr
0,06
0,03
0
0
0
0
10
20
30
40
50
60
15
350
30
45
60
75
Rgon (Ω)
IC (A)
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
VGE
R gon
=
=
VGE
IC
=
±15
Tj:
Tj:
=
30
Copyright Vincotech
17
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC
)
Qr = f(R gon)
3,75
2,5
Q
Q
Qr
Qr
3
2
Qr
Qr
2,25
1,5
0,75
0
1,5
1
Qr
Qr
0,5
0
0
0
10
350
20
30
40
25 °C
50
60
10
350
20
30
40
50
60
70
Rg on (Ω)
IC (A)
At
VCE
VGE
R gon
=
V
V
Ω
At
VCE
VGE
IC
=
V
V
A
25 °C
125 °C
150 °C
=
±15
125 °C
=
±15
Tj:
Tj:
=
16
150 °C
=
30
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC
)
IRM = f(R gon)
90
125
IRM
IRM
I
I
75
100
60
45
30
15
IRM
75
50
25
IRM
IRM
IRM
0
0
0
0
15
30
45
60
75
Rgo n (Ω)
10
350
20
30
40
25 °C
50
60
IC (A)
At
VCE
=
V
V
Ω
At
VCE
VGE
IC
=
350
±15
30
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
±15
125 °C
=
Tj:
Tj:
R gon
16
150 °C
=
Copyright Vincotech
18
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(IC
)
di F/dt, di rr/dt = f(R gon)
15000
7500
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
12000
6000
4500
3000
1500
0
9000
6000
3000
0
0
15
30
45
60
75
Rgon (Ω)
0
10
20
30
40
50
60
IC (A)
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
IC
=
350
±15
30
V
V
A
25 °C
VGE
=
=
=
125 °C
Tj:
Tj:
R gon
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
75
IC MAX
I
60
I
45
30
15
0
I
V
0
150
300
450
600
750
VC E (V)
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
19
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switching Definitions
General conditions
T j
Rgon
=
=
=
125 °C
16 Ω
16 Ω
Rgoff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
125
400
tdoff
%
%
100
IC
300
VGE 90%
VCE 90%
75
50
25
0
200
IC
VGE
tEoff
VCE
VGE
100
tdon
IC 1%
VCE 3%
VGE 10%
VCE
IC 10%
0
tEon
-25
-100
2,96
0,1
0,15
0,2
0,25
0,3
0,35
3
3,04
3,08
3,12
3,16
t (µs)
t (µs)
VGE (0%) =
-15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
350
30
V
350
30
V
A
A
tdoff
tEoff
=
=
0,104
0,179
μs
μs
tdon
tEon
=
=
0,070
0,134
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
375
fitted
%
%
IC
VCE
100
300
IC 90%
75
50
25
0
225
VCE
IC 60%
IC 40%
150
tr
IC 90%
75
IC10%
IC
tf
IC 10%
0
-25
-75
0,2
0,215
0,23
0,245
0,26
0,275
3,055
3,0625
3,07
350
3,0775
3,085
3,0925
3,1
3,1075
t (µs)
t (µs)
VC (100%) =
IC (100%) =
tf =
350
30
V
VC (100%) =
IC (100%) =
V
A
30
A
0,015
μs
tr
=
0,009
μs
Copyright Vincotech
20
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
250
%
%
IC 1%
100
200
Poff
Eoff
Pon
75
50
150
100
50
Eon
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
tEon
-25
-50
0,09
0,14
0,19
0,24
0,29
0,34
2,97
3,01
3,05
3,09
3,13
3,17
t (µs)
t (µs)
Poff (100%) =
Eoff (100%) =
10,57
0,36
0,18
kW
mJ
μs
Pon (100%) =
Eon (100%) =
10,57
0,50
0,13
kW
mJ
μs
tEoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
200
%
IF
100
trr
0
VF
IRRM 10%
-100
-200
fitted
IRRM 90%
IRRM 100%
-300
3,05
3,07
3,09
3,11
3,13
3,15
t (µs)
VF (100%) =
IF (100%) =
IRRM (100%) =
350
30
V
A
-63
0,066
A
trr
=
μs
Copyright Vincotech
21
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
200
%
%
Erec
IF
100
Qr
100
tQr
tErec
75
0
-100
-200
-300
50
25
Prec
0
-25
3,05
3,05
3,09
3,13
3,17
3,21
3,08
3,11
3,14
3,17
3,2
3,23
t (µs)
t (µs)
IF (100%) =
Qr (100%) =
30
A
Prec (100%) =
Erec (100%) =
10,57
0,44
0,13
kW
mJ
μs
1,91
0,13
μC
μs
tQr
=
tErec =
Copyright Vincotech
22
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(IC
)
1
1
E
Eoff
Eoff
E
Eon
Eon
Eon
0,8
0,8
Eon
Eon
Eoff
Eon
0,6
0,4
0,2
0
0,6
0,4
0,2
0
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
0
15
30
45
60
75
Rg (Ω)
IC (A)
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
Tj:
VCE
VGE
IC
=
=
=
350
±15
30
V
V
A
Tj:
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(Ic)
Erec = f(R g)
0,8
1
E
E
Erec
Erec
0,8
0,6
0,6
0,4
0,2
0
Erec
Erec
0,4
0,2
0
Erec
Erec
0
15
30
45
60
75
0
10
20
30
40
50
60
IC (A)
Rg (Ω)
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
350
±15
16
V
V
Ω
Tj:
VCE
VGE
IC
=
=
=
350
±15
30
V
V
A
Tj:
R gon
Copyright Vincotech
23
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC
)
t = f(R g)
1
1
t
t
td(off)
td(on)
td(off)
td(on)
tf
0,1
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
0
15
30
45
60
75
0
10
20
30
40
50
60
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
350
±15
16
°C
V
Tj =
150
350
±15
30
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
IC
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC
)
trr = f(R gon
)
0,16
0,16
t
t
trr
trr
trr
trr
trr
0,12
0,12
trr
0,08
0,04
0,08
0,04
0
0
0
0
10
20
30
40
50
60
15
350
30
45
60
75
Rgon (Ω)
IC (A)
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
VGE
R gon
=
=
VGE
IC
=
±15
Tj:
Tj:
=
30
Copyright Vincotech
24
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC
)
Qr = f(R gon)
3
2,5
Qr
Qr
Q
Q
2,5
2
Qr
2
1,5
1
Qr
1,5
1
Qr
Qr
0,5
0,5
0
0
0
0
10
350
20
30
40
25 °C
50
60
15
350
30
45
60
75
Rg on (Ω)
IC (A)
At
VCE
VGE
R gon
=
V
V
Ω
At
VCE
VGE
IC
=
V
V
A
25 °C
125 °C
150 °C
=
±15
125 °C
=
±15
Tj:
Tj:
=
16
150 °C
=
30
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC
)
IRM = f(R gon)
60
60
I
I
IRM
50
48
IRM
40
30
20
10
36
24
12
IRM
IRM
IRM
IRM
0
0
0
0
15
30
45
60
75
Rgo n (Ω)
10
350
20
30
40
25 °C
50
60
IC (A)
At
VCE
=
V
V
Ω
At
VCE
VGE
IC
=
350
±15
30
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
±15
125 °C
=
Tj:
Tj:
R gon
16
150 °C
=
Copyright Vincotech
25
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(IC
)
di F/dt, di rr/dt = f(R gon)
7500
5000
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
6000
4000
3000
2000
1000
0
4500
3000
1500
0
0
15
30
45
60
75
Rgon (Ω)
0
10
20
30
40
50
60
IC (A)
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
IC
=
350
±15
30
V
V
A
25 °C
VGE
=
=
=
125 °C
Tj:
Tj:
R gon
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
75
I
IC MAX
60
I
45
30
15
0
I
V
0
150
300
450
600
750
VC E (V)
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
26
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switching Definitions
General conditions
T j
Rgon
=
=
=
125 °C
16 Ω
16 Ω
Rgoff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
125
250
tdoff
%
%
100
200
IC
VCE 90%
VGE 90%
75
50
25
0
150
VGE
IC
VCE
100
VGE
tdon
tEoff
50
IC 1%
VCE 3%
VGE 10%
VCE
IC 10%
0
tEon
-25
0,08
-50
2,95
0,13
0,18
0,23
0,28
0,33
3
3,05
3,1
3,15
3,2
t (µs)
t (µs)
VGE (0%) =
-15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
350
30
V
350
30
V
A
A
tdoff
tEoff
=
=
0,109
0,187
μs
μs
tdon
tEon
=
=
0,069
0,137
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
250
fitted
%
%
IC
VCE
100
200
IC 90%
75
50
25
0
150
IC 60%
IC 40%
VCE
100
IC 90%
tr
50
IC10%
tf
IC 10%
IC
0
-25
0,17
-50
0,2
0,23
0,26
0,29
0,32
3,03
3,055
3,08
3,105
3,13
3,155
t (µs)
t (µs)
VC (100%) =
IC (100%) =
tf =
350
V
VC (100%) =
IC (100%) =
350
30
V
30
A
A
0,027
μs
tr
=
0,010
μs
Copyright Vincotech
27
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
150
%
%
IC 1%
Eoff
100
Eon
Pon
100
Poff
75
50
50
25
VCE 3%
VGE 10%
VGE 90%
0
0
tEon
tEoff
-25
0,05
-50
2,95
0,1
0,15
0,2
0,25
0,3
0,35
3
3,05
3,1
3,15
3,2
t (µs)
t (µs)
Poff (100%) =
Eoff (100%) =
10,57
0,45
0,19
kW
mJ
μs
Pon (100%) =
Eon (100%) =
10,57
0,36
0,14
kW
mJ
μs
tEoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
150
%
IF
100
50
trr
VF
0
IRRM 10%
fitted
-50
-100
IRRM 90%
IRRM 100%
-150
3
3,04
3,08
3,12
3,16
3,2
t (µs)
VF (100%) =
IF (100%) =
IRRM (100%) =
350
30
V
A
-36
0,095
A
trr
=
μs
Copyright Vincotech
28
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
IF
Qr
Erec
100
100
tQr
tErec
50
75
0
-50
50
25
0
Prec
-100
-150
-25
3
3,05
3,1
3,15
3,2
3,25
3,3
3
3,05
3,1
3,15
3,2
3,25
t (µs)
3,3
t (µs)
IF (100%) =
Qr (100%) =
30
A
Prec (100%) =
Erec (100%) =
10,57
0,46
0,19
kW
mJ
μs
1,73
0,19
μC
μs
tQr
=
tErec =
Copyright Vincotech
29
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with Press-fit pins
Ordering Code
10-PG07N3A030S5-M894F96T
10-PG07N3A030S5-M894F96T-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin Table
Pin
X
Y
Function
DC+1
0
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
1
2
6
GND1
GND1
DC-1
DC-1
GND2
GND2
DC+2
DC+2
GND3
3
4
9,7
15,7
18,7
24,7
27,7
33,8
36,8
42,8
5
6
7
8
9
10
11
12
13
46,2
52,2
52,2
28,2
28,2
23,7
GND3
DC-2
G32
14
15
16
17
18
19
20
21
22
52,2
41,25
38,25
32,55
29,55
18,7
20,7
20,6
20,6
20,6
20,6
20,7
23,7
23,7
20,7
S32
G31
S31
S21
G21
S22
G22
G12
S12
18,7
15,7
15,7
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
4,75
1,75
8,35
11,35
19,95
22,95
44,35
47,35
52,2
52,2
46,75
43,95
40,95
37,95
29,2
26,2
23,2
20,4
11,8
9
20,6
20,6
12,2
12,2
12,2
12,2
12,2
12,2
8,9
5,9
0
G11
S11
G14
S14
S24
G24
G34
S34
Therm1
Therm2
Ph3
0
Ph3
0
S33
G33
G23
S23
Ph2
0
0
0
0
0
Ph2
0
Ph1
0
Ph1
6
3
0
0
S13
G13
Copyright Vincotech
30
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T21, T22,
T31, T32
IGBT
650 V
30 A
30 A
30 A
30 A
30 A
Buck Switch
Buck Diode
D11, D12, D21, D22,
D31, D32
FWD
IGBT
FWD
650 V
650 V
650 V
650 V
T13, T14, T23, T24,
T33, T34
Boost Switch
Boost Diode
D13, D14, D23, D24,
D33, D34
D15, D16, D25, D26,
D35, D36
FWD
NTC
Boost Sw.Inv.Diode
Thermistor
Rt
Copyright Vincotech
31
04 Jun. 2019 / Revision 1
10-PG07N3A030S5-M894F96T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PG07N3A030S5-M894F96T-D1-14
04 Jun. 2019
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
04 Jun. 2019 / Revision 1
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