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10-PY07BVA030S5-LF42E08Y [VINCOTECH]

High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
10-PY07BVA030S5-LF42E08Y
型号： 10-PY07BVA030S5-LF42E08Y
厂家： VINCOTECH    VINCOTECH
描述：

High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
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10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
650 V / 30 A  
flow SOL 1 BI (TL)  
Features  
flow 1 12 mm housing  
● Booster + H6.5 Bridge  
● S5 IGBT Chipset in Booster part  
● Inverter part is equipped with S5 IGBT Chipset for  
higher efficiency  
● Integrated NTC  
Press-fit pin  
Solder pin  
Schematic  
Target applications  
● Solar Inverters  
Types  
● 10-PY07BVA030S5-LF42E08Y  
● 10-FY07BVA030S5-LF42E08  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Low Buck Switch / High Buck Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
35  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
90  
A
59  
W
V
±20  
175  
Maximum junction temperature  
°C  
Copyright Vincotech  
1
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Buck Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
28  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
40  
A
51  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Switch  
VCES  
IC  
Collector-emitter voltage  
650  
28  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
Ptot  
VGES  
VCC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
59  
W
V
±20  
360  
175  
Short circuit ratings  
VGE = 15 V  
V
Tjmax  
Maximum junction temperature  
°C  
Low Buck Diode / High Buck Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
650  
28  
V
A
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
40  
A
51  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Input Boost Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
35  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
90  
A
59  
W
V
±20  
175  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Input Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak Repetitive Reverse Voltage  
650  
33  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
50  
W
°C  
Tjmax  
Maximum Junction Temperature  
175  
ByPass Diode  
VRRM  
IF  
IFSM  
I2t  
Ptot  
Tjmax  
Peak Repetitive Reverse Voltage  
1600  
46  
V
A
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
270  
370  
56  
A
50 Hz Single Half Sine Wave  
tp = 10 ms  
A2s  
W
°C  
Total power dissipation  
Tj = Tjmax  
Maximum Junction Temperature  
150  
Input Boost Sw. Protection Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
650  
14  
V
A
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
20  
A
33  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
3
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
tp = 1 min  
V
Creepage distance  
Clearance  
min. 12,7  
7,93  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
4
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Low Buck Switch / High Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0003 25  
25  
3,2  
4
4,8  
V
V
1,35  
1,54  
1,57  
1,75  
Collector-emitter saturation voltage  
VCEsat  
15  
30  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
1800  
55  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 MHz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
7
15  
520  
30  
70  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,61  
K/W  
Dynamic  
25  
56  
56  
56  
td(on)  
125  
150  
25  
Turn-on delay time  
9
tr  
Rise time  
125  
150  
25  
10  
11  
84  
Rgoff = 16 Ω  
Rgon = 16 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
101  
107  
16  
31  
46  
0,571  
0,698  
0,739  
0,197  
0,377  
0,430  
±15  
350  
30  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 0,9 μC  
= 1,7 μC  
= 1,8 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
5
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Buck Diode  
Static  
25  
1,56  
1,51  
1,51  
1,92  
1,28  
Forward voltage  
VF  
IR  
20  
125  
150  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,88  
K/W  
Dynamic  
25  
25  
33  
35  
IRRM  
Peak recovery current  
125  
150  
25  
A
68  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
110  
117  
ns  
di/dt = NaN A/μs  
di/dt = 3243 A/μs ±15  
di/dt = 3146 A/μs  
0,888  
1,656  
1,834  
0,154  
0,330  
0,373  
1330  
341  
350  
30  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
407  
Copyright Vincotech  
6
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,00029 25  
25  
5,1  
5,8  
6,4  
V
V
1,03  
1,49  
1,67  
1,71  
1,87  
Collector-emitter saturation voltage  
VCEsat  
15  
20  
125  
150  
ICES  
IGES  
Cies  
Cres  
Qg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Input capacitance  
0
650  
0
25  
25  
1
µA  
nA  
20  
150  
1100  
32  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate-emitter leakage current  
Thermal  
15  
480  
20  
120  
nC  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,60  
K/W  
Dynamic  
25  
62  
61  
61  
td(on)  
125  
150  
25  
Turn-on delay time  
22  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
21  
20  
Rgoff = 16 Ω  
Rgon = 16 Ω  
ns  
131  
150  
154  
72  
105  
115  
0,524  
0,705  
0,765  
0,431  
0,607  
0,643  
td(off)  
Turn-off delay time  
Fall time  
±15  
350  
20  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 0,6 μC  
= 1,2 μC  
= 1,4 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
7
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Low Buck Diode / High Buck Diode  
Static  
25  
1,56  
1,51  
1,51  
1,92  
1,28  
Forward voltage  
VF  
IR  
20  
125  
150  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,88  
K/W  
Dynamic  
25  
13  
17  
18  
IRRM  
125  
150  
25  
Peak recovery current  
A
72  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
114  
127  
ns  
di/dt = 1272 A/μs  
di/dt = 868 A/μs ±15  
di/dt = 1011 A/μs  
0,614  
1,203  
1,382  
0,093  
0,197  
0,234  
221  
350  
20  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
184  
147  
Copyright Vincotech  
8
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Input Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0003 25  
25  
3,2  
4
4,8  
V
V
1,35  
1,54  
1,57  
1,75  
Collector-emitter saturation voltage  
VCEsat  
15  
30  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
1800  
55  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 MHz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
7
15  
520  
30  
70  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,61  
K/W  
Dynamic  
25  
65  
66  
66  
td(on)  
125  
150  
25  
Turn-on delay time  
8
tr  
Rise time  
125  
150  
25  
9
10  
87  
Rgoff = 16 Ω  
Rgon = 16 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
106  
111  
15  
33  
45  
0,421  
0,541  
0,579  
0,300  
0,478  
0,529  
±15  
350  
30  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 0,9 μC  
= 1,7 μC  
= 2 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
9
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Input Boost Diode  
Static  
25  
1,52  
1,46  
1,44  
1,92  
1,6  
VF  
Ir  
125  
150  
Forward voltage  
30  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,92  
K/W  
Dynamic  
25  
31  
44  
49  
IRRM  
125  
150  
25  
Peak recovery current  
A
54  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
79  
95  
ns  
di/dt = 4199 A/μs  
di/dt = 3916 A/μs  
di/dt = 3772 A/μs  
0,867  
1,706  
1,998  
0,206  
0,431  
0,516  
1540  
650  
Recovered charge  
±15  
350  
30  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
780  
ByPass Diode  
Static  
25  
0,8  
1,17  
1,13  
1,6  
Forward voltage  
Reverse leakage current  
Thermal  
VF  
Ir  
35  
V
125  
25  
50  
1600  
µA  
145  
1100  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,25  
K/W  
Copyright Vincotech  
10  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Input Boost Sw. Protection Diode  
Static  
25  
125  
1,67  
1,56  
1,87  
0,14  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
10  
V
650  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
2,87  
22  
K/W  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1484 Ω  
-5  
5
5
mW  
mW/K  
K
1,5  
B(25/50) Tol. ±1 %  
B(25/100) Tol. ±1 %  
3962  
4000  
B-value  
K
Vincotech NTC Reference  
I
Copyright Vincotech  
11  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Low Buck Switch / High Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
Tj:  
VGE  
=
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,61  
Tj:  
VCE  
=
=
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
8,39E-02  
2,20E-01  
7,21E-01  
3,37E-01  
1,50E-01  
1,00E-01  
2,23E+00  
2,63E-01  
6,39E-02  
1,40E-02  
3,28E-03  
4,05E-04  
Copyright Vincotech  
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07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Low Buck Switch / High Buck Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G)  
I C = f(VCE)  
I
I
I
I
V
V
V
V
D =  
single pulse  
80 ºC  
I C=  
30  
A
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
13  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Buck Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,88  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
8,42E-02  
1,79E-01  
8,86E-01  
4,50E-01  
2,75E-01  
3,60E+00  
3,95E-01  
7,08E-02  
1,69E-02  
2,45E-03  
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datasheet  
Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D
=
tp  
1,60  
IGBT thermal model values  
(K/W)  
/ T  
VCE  
=
Tj:  
R th(j-s)  
=
K/W  
R
τ
(s)  
8,72E-02  
2,19E-01  
7,41E-01  
3,11E-01  
1,15E-01  
1,31E-01  
1,64E+00  
2,09E-01  
5,24E-02  
1,19E-02  
2,56E-03  
3,71E-04  
Copyright Vincotech  
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datasheet  
Boost Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G)  
I C = f(VCE  
)
I
I
I
V
V
V
I
V
D =  
single pulse  
80 ºC  
I C =  
20  
A
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
figure 7.  
IGBT  
figure 8.  
IGBT  
Short circuit duration as a function of VGE  
Typical short circuit current as a function of VGE  
tpSC = f(VGE  
)
I SC = f(VGE)  
I
I
I
I
t
t
t
t
VCE  
=
VCE  
≤
650  
175  
V
ºC  
650  
175  
V
ºC  
Tj ≤  
Tj ≤  
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datasheet  
Low Buck Diode / High Buck Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,88  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
8,42E-02  
1,79E-01  
8,86E-01  
4,50E-01  
2,75E-01  
3,60E+00  
3,95E-01  
7,08E-02  
1,69E-02  
2,45E-03  
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datasheet  
Input Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
Tj:  
VGE  
=
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D
=
tp  
/
T
Tj:  
VCE  
=
R th(j-s)  
=
1,61  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
8,39E-02  
2,20E-01  
7,21E-01  
3,37E-01  
1,50E-01  
1,00E-01  
2,23E+00  
2,63E-01  
6,39E-02  
1,40E-02  
3,28E-03  
4,05E-04  
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datasheet  
Input Boost Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G)  
I C = f(VCE)  
I
I
I
I
V
V
V
V
D =  
single pulse  
80 ºC  
I C=  
30  
A
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
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datasheet  
Input Boost Diode Characteristics  
figure 1.  
Inverse Diode  
figure 2.  
Inverse Diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
D = 0,5  
0,2  
10-1  
0,1  
0,05  
0,02  
0,01  
0,005  
0,000  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
D =  
R th(j-s)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
tp / T  
1,92  
T j:  
K/W  
Inverse Diode thermal model values  
R (K/W)  
τ
(s)  
9,41E-02  
3,44E-01  
8,56E-01  
3,61E-01  
1,37E-01  
1,27E-01  
2,25E+00  
2,12E-01  
5,84E-02  
9,83E-03  
2,89E-03  
4,79E-04  
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datasheet  
ByPass Diode Characteristics  
figure 1.  
Bypass Diode  
figure 2.  
Bypass Diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
D = 0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0,000  
10-2  
10-4  
10-3  
10-2  
10-1  
100  
101  
D =  
R th(j-s)  
tp  
=
250  
μs  
25 °C  
125 °C  
tp / T  
T j:  
=
1,25  
K/W  
Bypass Diode thermal model values  
R (K/W)  
τ
(s)  
8,00E-02  
1,56E-01  
6,95E-01  
2,23E-01  
9,97E-02  
5,22E+00  
4,18E-01  
8,82E-02  
3,07E-02  
5,99E-03  
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07 May. 2019 / Revision 4  
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datasheet  
Input Boost Sw. Protection Diode Characteristics  
figure 1.  
Prot. Diode  
figure 2.  
Prot. Diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
D =  
R th(j-s)  
tp / T  
2,87  
Tj:  
K/W  
Prot. Diode thermal model values  
R (K/W)  
τ
(s)  
6,53E-02  
1,48E-01  
1,31E+00  
7,32E-01  
4,04E-01  
2,11E-01  
3,94E+00  
4,48E-01  
5,96E-02  
1,36E-02  
2,79E-03  
5,37E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Thermistor  
Typical NTC characteristic as a function of temperature  
as a function of temperature  
R = f(T)  
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07 May. 2019 / Revision 4  
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datasheet  
Buck Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
16  
V
V
Ω
Ω
j
:
125 °C  
150 °C  
350  
±15  
30  
V
V
A
VCE  
VGE  
=
=
=
=
T
VCE  
VGE  
I C  
=
=
=
Tj:  
R gon  
R goff  
16  
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
16  
V
V
Ω
:
350  
±15  
30  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
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07 May. 2019 / Revision 4  
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datasheet  
Buck Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
16  
°C  
V
150  
350  
±15  
30  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
16  
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
350  
At  
VCE  
=
350  
±15  
16  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
±15  
30  
:
Tj  
VGE  
R gon  
=
=
VGE  
I C  
=
=
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07 May. 2019 / Revision 4  
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datasheet  
Buck Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
350  
25 °C  
350  
V
V
Ω
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
±15  
16  
:
Tj  
125 °C  
150 °C  
±15  
30  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
350  
25 °C  
V
V
Ω
350  
±15  
30  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
±15  
16  
:
Tj  
125 °C  
150 °C  
:
Tj  
VGE  
=
=
VGE  
I C  
=
R gon  
=
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07 May. 2019 / Revision 4  
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datasheet  
Buck Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
At  
VCE  
=
350  
±15  
16  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
30  
V
V
A
25 °C  
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
I
I
I
I
IC MAX  
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj  
=
=
=
175  
°C  
Ω
R gon  
R goff  
16  
16  
Ω
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datasheet  
Buck Switching Definitions  
General conditions  
=
=
=
125 °C  
16 Ω  
T j  
Rgon  
R goff  
16 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)  
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
IC  
tdoff  
VGE  
IC  
VCE  
VGE  
tEoff  
VCE  
tEon  
-15  
V
-15  
V
VGE (0%) =  
VGE (0%) =  
15  
V
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
VGE (100%) =  
VC (100%) =  
I C (100%) =  
350  
30  
V
350  
30  
V
A
A
0,101  
0,194  
μs  
μs  
0,056  
0,196  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
VCE  
IC  
VCE  
tr  
IC  
tf  
VC (100%) =  
I C (100%) =  
t f =  
350  
30  
V
VC (100%) =  
I C (100%) =  
350  
30  
V
A
A
0,031  
μs  
0,010  
μs  
tr  
=
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07 May. 2019 / Revision 4  
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datasheet  
Buck Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Eoff  
Eon  
Poff  
tEoff  
tEon  
10,57  
kW  
mJ  
μs  
10,57  
0,70  
0,20  
kW  
mJ  
μs  
P off (100%) =  
Eoff (100%) =  
P on (100%) =  
Eon (100%) =  
0,38  
0,19  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
VF  
IF  
fitted  
350  
30  
V
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
A
-33  
0,110  
A
μs  
t rr  
=
Copyright Vincotech  
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07 May. 2019 / Revision 4  
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datasheet  
Buck Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
IF  
Qr  
Erec  
tErec  
Prec  
30  
A
10,57  
0,33  
0,22  
kW  
mJ  
μs  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
1,66  
0,22  
μC  
μs  
t Qr  
=
tErec =  
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datasheet  
Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
16  
V
V
Ω
Ω
j
:
350  
±15  
20  
V
V
A
VCE  
VGE  
=
=
=
=
T
VCE  
VGE  
I C  
=
=
=
Tj:  
R gon  
R goff  
16  
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
16  
V
V
Ω
:
350  
±15  
20  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
30  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
16  
°C  
V
150  
350  
±15  
20  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
16  
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
25 °C  
350  
A
t
VCE  
=
350  
±15  
16  
V
V
Ω
At  
VCE  
=
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
125 °C  
150 °C  
±15  
20  
:
Tj  
VGE  
R gon  
=
=
VGE  
I C  
=
=
Copyright Vincotech  
31  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
350  
350  
±15  
16  
V
V
Ω
25 °C  
125 °C  
150 °C  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
:
Tj  
±15  
20  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
350  
±15  
16  
V
V
Ω
25 °C  
125 °C  
150 °C  
350  
±15  
20  
V
V
A
25 °C  
125 °C  
150 °C  
A
t
VCE  
=
At  
VCE =  
:
Tj  
:
Tj  
VGE  
=
=
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
32  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
25 °C  
At  
VCE  
=
350  
±15  
16  
V
At  
VCE  
VGE  
I C  
=
350  
±15  
20  
V
V
A
25 °C  
V
:
Tj  
125 °C  
150 °C  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
Ω
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
I
I
I
I
IC MAX  
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj  
=
=
=
175  
°C  
Ω
R gon  
R goff  
16  
16  
Ω
Copyright Vincotech  
33  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
16 Ω  
T j  
Rgon  
R goff  
16 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)  
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
VCE  
VGE  
IC  
tEoff  
VCE  
tEon  
-15  
VGE (0%) =  
V
VGE (0%) =  
-15  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
350  
20  
V
350  
20  
V
A
A
0,150  
0,465  
μs  
μs  
0,061  
0,313  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
VCE  
tr  
VCE  
IC  
tf  
VC (100%) =  
I C (100%) =  
t f =  
350  
20  
V
VC (100%) =  
I C (100%) =  
350  
V
A
20  
A
0,105  
μs  
tr  
=
0,021  
μs  
Copyright Vincotech  
34  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Eoff  
Pon  
Poff  
Eon  
tEon  
tEoff  
7,03  
kW  
mJ  
μs  
7,03  
0,71  
0,31  
kW  
mJ  
μs  
P off (100%) =  
Eoff (100%) =  
P on (100%) =  
Eon (100%) =  
0,61  
0,47  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
fitted  
VF  
350  
20  
V
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
A
-17  
0,114  
A
μs  
t rr  
=
Copyright Vincotech  
35  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Boost Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
Erec  
Qr  
tErec  
IF  
Prec  
20  
A
7,03  
kW  
mJ  
μs  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
1,20  
0,23  
μC  
μs  
0,20  
0,23  
t Qr  
=
tErec =  
Copyright Vincotech  
36  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Input Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
16  
V
V
Ω
Ω
T
j
:
125 °C  
150 °C  
VCE  
VGE  
I C  
=
=
=
350  
±15  
30  
V
V
A
Tj:  
VCE  
VGE  
=
=
=
=
R gon  
R goff  
16  
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
16  
V
V
Ω
:
350  
±15  
30  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
37  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Input Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
16  
°C  
V
150  
350  
±15  
30  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
16  
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
350  
350  
±15  
16  
V
V
Ω
25 °C  
125 °C  
150 °C  
V
V
A
25 °C  
125 °C  
150 °C  
A
t
VCE  
=
At  
VCE =  
:
Tj  
±15  
30  
:
Tj  
VGE  
R gon  
=
=
VGE  
I C  
=
=
Copyright Vincotech  
38  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Input Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
350  
25 °C  
350  
V
V
Ω
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
±15  
16  
:
Tj  
125 °C  
150 °C  
±15  
30  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
350  
25 °C  
V
V
Ω
350  
±15  
30  
V
V
A
25 °C  
125 °C  
150 °C  
A
t
VCE  
=
At  
VCE =  
±15  
16  
:
Tj  
125 °C  
150 °C  
:
Tj  
VGE  
=
=
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
39  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Input Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
At  
VCE  
=
350  
±15  
16  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
30  
V
V
A
25 °C  
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj  
=
=
=
175  
°C  
Ω
R gon  
R goff  
16  
16  
Ω
Copyright Vincotech  
40  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Input Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
16 Ω  
T j  
Rgon  
R goff  
16 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)  
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
IC  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
30  
V
350  
30  
V
A
A
0,106  
0,217  
μs  
μs  
0,066  
0,151  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
VCE  
VCE  
tr  
IC  
tf  
350  
30  
V
A
350  
30  
V
A
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
0,033  
μs  
0,009  
μs  
tr  
=
Copyright Vincotech  
41  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Input Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Eoff  
Eon  
Pon  
Poff  
tEoff  
tEon  
10,59  
kW  
mJ  
μs  
10,59  
0,54  
0,15  
kW  
mJ  
μs  
P off (100%) =  
Eoff (100%) =  
P on (100%) =  
Eon (100%) =  
0,48  
0,22  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
VF  
fitted  
350  
30  
V
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
A
-44  
0,079  
A
μs  
t rr  
=
Copyright Vincotech  
42  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Input Boost Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec  
)
Erec  
IF  
Qr  
tErec  
Prec  
30  
A
10,59  
0,43  
0,17  
kW  
mJ  
μs  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
1,71  
0,17  
μC  
μs  
t Qr  
=
tErec =  
Copyright Vincotech  
43  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12 mm housing with Press-fit pins  
with thermal paste 12 mm housing with Press-fit pins  
without thermal paste 12 mm housing with Solder pins  
with thermal paste 12 mm housing with Solder pins  
Ordering Code  
10-PY07BVA030S5-LF42E08Y  
10-PY07BVA030S5-LF42E08Y-/3/  
10-FY07BVA030S5-LF42E08  
10-FY07BVA030S5-LF42E08-/3/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
V IN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
1
X
Y
9
6
3
0
0
0
0
3
6
9
Function  
G22  
52,3  
2
52,3  
S14  
3
52,3  
G14  
Ph2  
Ph2  
Ph1  
Ph1  
G12  
S12  
G21  
4
49,3  
LF42E08  
5
46,8  
6
30,75  
28,25  
25,25  
25,25  
25,25  
7
8
9
10  
11  
12  
13  
Not assembled  
Not assembled  
Not assembled  
LF42E08Y  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Not assembled  
7,1  
7,1  
0
0
DC+In1  
2,5  
0
DC+In1  
Boost1  
0
2,5  
15,1  
17,6  
26  
Boost1  
11,1  
11,1  
11,1  
11,1  
DC+Boost  
DC+Boost  
DC-Boost  
DC-Boost  
28,3  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
0
3
28,3  
28,3  
G25  
S25  
Not assembled  
Not assembled  
26,4  
31,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
17,7  
17,7  
11,2  
8,7  
G11  
S11  
Therm1  
Therm2  
S13  
36,8  
41,9  
47,4  
52,3  
G13  
40,85  
37,85  
39,35  
39,35  
52,3  
DC-2  
DC-1  
DC+  
DC+  
A20  
17,3  
Copyright Vincotech  
44  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11, T12, T13, T14  
IGBT  
650 V  
30 A  
20 A  
20 A  
20 A  
30 A  
30 A  
35 A  
10 A  
Low Buck Switch / High Buck Switch  
Buck Diode  
D21, D22  
FWD  
IGBT  
FWD  
IGBT  
Diode  
Diode  
Diode  
NTC  
650 V  
650 V  
650 V  
650 V  
650 V  
1600 V  
650 V  
T21, T22  
Boost Switch  
D12, D14, D20  
Low Buck Diode / High Buck Diode  
Input Boost Switch  
Input Boost Diode  
T25  
D25  
D26  
D45  
Rt  
ByPass Diode  
Input Boost Sw. Protection Diode  
Thermistor  
Copyright Vincotech  
45  
07 May. 2019 / Revision 4  
10-PY07BVA030S5-LF42E08Y  
10-FY07BVA030S5-LF42E08  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
Correction of Ic  
Added Solder pin variant  
/
If values  
1,2,3  
1,44  
10-xY07BVA030S5-LF42E08x-D3-14  
07 May. 2019  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
46  
07 May. 2019 / Revision 4  

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