10-PY07BVA075S5-LF45E18Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;型号: | 10-PY07BVA075S5-LF45E18Y |
厂家: | VINCOTECH |
描述: | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
文件: | 总55页 (文件大小:3273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
650 V / 75 A
flow SOL 1 BI (TL)
Features
flow 1 12 mm housing
● Dual Booster with bypass diode + H6.5 Bridge
● S5 IGBT Chipset for higher efficiency
● Kelvin emitter for improved switching
● Integrated DC Link capacitor
● Integrated NTC
● Low inductive design
Press-fit pin
Solder pin
Schematic
Target applications
● Solar Inverters
Types
● 10-FY07BVA075S5-LF45E18
● 10-PY07BVA075S5-LF45E18Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Low Buck Switch / High Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
58
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
225
86
A
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
47
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
100
63
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
58
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
225
86
A
W
V
±20
175
Maximum junction temperature
°C
Low Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
47
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
100
63
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
High Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
47
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
100
63
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
58
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
225
86
A
W
V
±20
175
Maximum junction temperature
°C
Input Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
55
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
150
71
A
W
°C
Tjmax
Maximum junction temperature
175
ByPass Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
1600
75
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
95
W
°C
Maximum junction temperature
150
Input Boost Sw. Protection Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
Continuous (direct) forward current
Total power dissipation
650
10
V
A
Tj = Tjmax
Ts = 80 °C
33
W
°C
Maximum junction temperature
175
Capacitor (DC)
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
-55…+125
°C
Copyright Vincotech
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10-PY07BVA075S5-LF45E18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
6000
2500
V
Visol
Isolation voltage
AC Voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
8,16 / 7,93
> 200
mm
mm
Solder pins / Press-fit pins
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-PY07BVA075S5-LF45E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Low Buck Switch / High Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00075 25
25
3,2
4
4,8
V
V
1,56
1,56
1,59
1,75
Collector-emitter saturation voltage
VCEsat
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
4500
130
17
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
75
164
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,10
K/W
Dynamic
25
31
31
31
td(on)
125
150
25
Turn-on delay time
10
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
10
11
110
126
132
10
Rgon = 4 Ω
Rgoff = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
-5 / 15
350
75
tf
25
32
0,450
0,701
0,758
0,457
0,875
Qr
FWD
Qr
FWD
Qr
FWD
= 2,2 μC
= 4 μC
= 4,7 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,02
Copyright Vincotech
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10-PY07BVA075S5-LF45E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,50
1,44
1,42
1,92
2,65
VF
IR
125
150
Forward voltage
50
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,50
K/W
Dynamic
25
86
110
117
IRRM
125
150
25
Peak recovery current
A
55
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
87
101
ns
di/dt = 5329 A/μs
di/dt = 8023 A/μs -5 / 15
di/dt = 7260 A/μs
2,18
4,04
4,70
0,381
0,839
1,02
5984
4040
4174
350
75
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
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10-PY07BVA075S5-LF45E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00075 25
25
3,2
4
4,8
V
V
1,56
1,56
1,59
1,75
Collector-emitter saturation voltage
VCEsat
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
4500
130
17
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
75
164
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,10
K/W
Dynamic (T21,D12)
25
60
62
60
td(on)
125
150
25
Turn-on delay time
11
tr
Rise time
125
150
25
10
11
88
Rgoff = 4 Ω
Rgon = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
106
109
12
17
22
0,661
0,904
0,986
0,604
1,04
1,11
±15
350
76
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 2,2 μC
= 4,1 μC
= 4,7 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
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10-PY07BVA075S5-LF45E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Low Boost Diode
Static
25
1,50
1,44
1,42
1,92
2,65
VF
IR
125
150
Forward voltage
50
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,50
K/W
Dynamic
25
83
93
94
IRRM
125
150
25
Peak recovery current
A
59
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
100
117
ns
di/dt = 6510 A/μs
di/dt = 4900 A/μs ±15
di/dt = 6125 A/μs
2,18
4,08
4,73
0,470
0,935
1,10
5969
1181
1324
350
76
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
8
04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00075 25
25
3,2
4
4,8
V
V
1,56
1,56
1,59
1,75
Collector-emitter saturation voltage
VCEsat
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
4500
130
17
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
75
164
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic (T21,D20)
Turn-on delay time
1,10
K/W
25
65
64
66
td(on)
125
150
25
12
tr
Rise time
125
150
25
11
13
87
Rgoff = 4 Ω
Rgon = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
105
110
14
21
31
0,527
0,873
0,855
0,733
1,04
1,29
±15
350
76
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 2,1 μC
= 4 μC
= 4,5 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
9
04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
High Boost Diode
Static
25
1,50
1,44
1,42
1,92
2,65
VF
IR
125
150
Forward voltage
50
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,50
K/W
Dynamic
25
71
92
92
IRRM
125
150
25
Peak recovery current
A
57
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
105
113
ns
di/dt = 6622 A/μs
di/dt = 6272 A/μs ±15
di/dt = 6687 A/μs
2,14
4,02
4,51
0,629
1,05
1,27
1089
1422
1342
350
76
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
10
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10-PY07BVA075S5-LF45E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Input Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00075 25
25
3,2
4
4,8
V
V
1,56
1,56
1,59
1,75
Collector-emitter saturation voltage
VCEsat
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
4500
130
17
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
75
164
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,10
K/W
25
24
24
24
td(on)
125
150
25
Turn-on delay time
11
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
12
12
127
145
150
22
Rgon = 4 Ω
Rgoff = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
0 / 15
350
75
tf
30
36
0,379
0,605
0,681
0,854
1,24
Qr
FWD
Qr
FWD
Qr
FWD
= 2,5 μC
= 4,7 μC
= 5,4 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,36
Copyright Vincotech
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10-PY07BVA075S5-LF45E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Input Boost Diode
Static
25
1,53
1,49
1,47
1,92
3,8
VF
IR
125
150
Forward voltage
75
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,34
K/W
25
92
116
123
IRRM
125
150
25
Peak recovery current
A
53
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
84
94
ns
di/dt = 8536 A/μs
di/dt = 6881 A/μs 0 / 15
di/dt = 6458 A/μs
2,49
4,66
5,38
0,672
1,27
1,46
2911
2634
2713
350
75
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
ByPass Diode
Static
25
125
1,10
1,04
VF
IR
Forward voltage
Reverse leakage current
Thermal
75
V
1600
25
50
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,74
K/W
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Input Boost Sw. Protection Diode
Static
25
125
1,67
1,56
1,87
0,14
VF
IR
Forward voltage
Reverse leakage current
Thermal
10
V
650
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,87
100
K/W
Capacitor (DC)
Capacitance
C
nF
%
%
Tolerance
-10
+10
2,5
Dissipation factor
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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datasheet
Low Buck Switch / High Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,10
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,16E-01
6,30E-01
1,62E-01
3,68E-02
6,02E-02
4,05E-01
6,87E-02
1,13E-02
2,51E-03
3,09E-04
Copyright Vincotech
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datasheet
Low Buck Switch / High Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
D =
single pulse
80 ºC
I C=
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
15
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,50
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,03E-01
2,05E-01
6,39E-01
3,39E-01
1,71E-01
4,45E-02
4,73E+00
5,53E-01
8,31E-02
2,02E-02
4,42E-03
1,30E-03
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D
=
tp
1,10
IGBT thermal model values
(K/W)
/ T
VCE
=
Tj:
R th(j-s)
=
K/W
R
τ
(s)
2,16E-01
6,30E-01
1,62E-01
3,68E-02
6,02E-02
4,05E-01
6,87E-02
1,13E-02
2,51E-03
3,09E-04
Copyright Vincotech
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04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
I
I
I
I
V
V
V
V
D =
single pulse
80 ºC
I C=
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Low Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,50
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,03E-01
2,05E-01
6,39E-01
3,39E-01
1,71E-01
4,45E-02
4,73E+00
5,53E-01
8,31E-02
2,02E-02
4,42E-03
1,30E-03
Copyright Vincotech
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04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
High Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,50
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,03E-01
2,05E-01
6,39E-01
3,39E-01
1,71E-01
4,45E-02
4,73E+00
5,53E-01
8,31E-02
2,02E-02
4,42E-03
1,30E-03
Copyright Vincotech
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04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D
=
tp
1,10
IGBT thermal model values
(K/W)
/ T
VCE
=
Tj:
R th(j-s)
=
K/W
R
τ
(s)
2,16E-01
6,30E-01
1,62E-01
3,68E-02
6,02E-02
4,05E-01
6,87E-02
1,13E-02
2,51E-03
3,09E-04
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
D =
single pulse
I C=
75
A
Ts
=
80
ºC
VGE
=
±15
Tjmax
V
Tj =
ºC
Copyright Vincotech
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04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,34
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
Copyright Vincotech
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04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
ByPass Diode Characteristics
figure 1.
Bypass diode
figure 2.
Bypass diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
R th(j-s)
tp / T
0,74
Tj:
K/W
Diode thermal model values
R (K/W)
τ
(s)
6,95E-02
1,21E-01
2,75E-01
2,24E-01
3,60E-02
1,01E-02
7,08E+00
1,15E+00
1,52E-01
5,48E-02
4,07E-03
1,33E-03
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Sw. Protection Diode Characteristics
figure 1.
Prot. Diode
figure 2.
Prot. Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
R th(j-s)
tp / T
2,87
Tj:
K/W
Prot. Diode thermal model values
R (K/W)
τ
(s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
With an inductive load at
With an inductive load at
25 °C
350
V
V
Ω
Ω
350
-5 / 15
75
V
V
A
VCE
VGE
=
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
-5 / 15
R gon
R goff
4
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
-5 / 15
4
V
V
Ω
350
-5 / 15
75
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
-5 / 15
4
°C
V
150
350
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
75
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
25 °C
At
VCE
=
350
-5 / 15
4
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
VGE
R gon
=
=
Tj:
VGE
I C
=
-5 / 15
75
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
25 °C
350
V
V
Ω
350
-5 / 15
75
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
=
-5 / 15
4
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
25 °C
At
VCE
=
350
V
V
Ω
At
VCE
=
350
-5 / 15
75
V
V
A
25 °C
-5 / 15
4
VGE
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
At
VCE
=
350
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
V
V
A
25 °C
-5 / 15
4
:
Tj
-5 / 15
75
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
Buck Switching Characteristics
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
IC MAX
I
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
=
=
4
4
R gon
R goff
Ω
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
4 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VCE
VGE
tEoff
VCE
tEon
VGE (0%) =
-5
V
VGE (0%) =
-5
V
V
V
A
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
350
75
V
350
75
A
126
ns
31
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
350
75
V
VC (100%) =
I C (100%) =
350
75
V
A
A
t f
=
25
ns
tr
=
10
ns
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
fitted
IF
VF
350
75
V
75
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
4,04
μC
110
87
A
t rr
=
ns
Copyright Vincotech
31
04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Buck Switching measurement circuit
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Low Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g
)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
4
V
V
Ω
Ω
j
:
350
±15
76
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c
)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
76
V
V
A
:
Tj
VCE
VGE
=
=
=
R gon
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Low Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
4
°C
V
150
350
±15
76
°C
V
Tj
VCE
=
=
=
=
=
Tj
VCE
VGE
I C
=
=
=
=
VGE
V
V
Ω
Ω
A
R gon
R goff
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
A
t
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
±15
4
:
Tj
VGE
I C
=
±15
76
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
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04 May. 2018 / Revision 2
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10-PY07BVA075S5-LF45E18Y
datasheet
Low Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
350
±15
76
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
±15
76
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
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04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Low Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
±15
4
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
Boost Switching Characteristics
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
=
=
4
4
R gon
R goff
Ω
Copyright Vincotech
36
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Low Boost Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
T j
Rgon
R goff
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
76
V
350
76
V
A
A
106
ns
62
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
350
76
V
VC (100%) =
I C (100%) =
350
76
V
A
A
t f
=
17
ns
tr
=
10
ns
Copyright Vincotech
37
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Low Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
fitted
IF
VF
350
76
V
76
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
4,08
μC
93
A
t rr
=
100
ns
Copyright Vincotech
38
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Low Boost Switching measurement circuit
Copyright Vincotech
39
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
High Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g
)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
4
V
V
Ω
Ω
j
:
350
±15
76
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c
)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
76
V
V
A
:
Tj
VCE
VGE
=
=
=
R gon
Copyright Vincotech
40
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
High Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
4
°C
V
150
350
±15
76
°C
V
Tj
VCE
=
=
=
=
=
Tj
VCE
VGE
I C
=
=
=
=
VGE
V
V
Ω
Ω
A
R gon
R goff
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
A
t
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
±15
4
:
Tj
VGE
I C
=
±15
76
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
41
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
High Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
350
±15
76
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
±15
76
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
42
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
High Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
±15
4
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
Boost Switching Characteristics
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
=
=
4
4
R gon
R goff
Ω
Copyright Vincotech
43
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
High Boost Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
T j
Rgon
R goff
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
VGE
IC
VCE
tEoff
VCE
tEon
-15
15
V
-15
V
VGE (0%) =
VGE (0%) =
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
76
V
350
76
V
A
A
105
ns
64
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
350
76
V
VC (100%) =
I C (100%) =
350
76
V
A
A
21
ns
11
ns
t f
=
tr =
Copyright Vincotech
44
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
High Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
fitted
IF
VF
350
76
V
76
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
4,02
μC
92
A
t rr
=
105
ns
Copyright Vincotech
45
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
High Boost Switching measurement circuit
Copyright Vincotech
46
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g
)
E = f(I C
)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
0 / 15
4
V
V
Ω
Ω
350
0 / 15
75
V
V
A
VCE
VGE
=
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c
)
Erec = f(R g)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
0 / 15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
0 / 15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
47
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
0 / 15
4
°C
V
150
°C
V
Tj =
Tj =
350
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
0 / 15
75
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
V
V
Ω
350
V
V
A
At
VCE
=
At
VCE =
25 °C
25 °C
0 / 15
4
0 / 15
75
VGE
R gon
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
48
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
At
VCE
VGE
R gon
=
350
0 / 15
4
V
V
Ω
At
VCE
VGE
I C
=
350
0 / 15
75
V
V
A
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
350
0 / 15
4
V
V
Ω
At
VCE
=
350
0 / 15
75
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
49
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
V
V
A
25 °C
0 / 15
4
:
Tj
0 / 15
75
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
Input Boost Switching Characteristics
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
=
=
4
4
R gon
R goff
Ω
Copyright Vincotech
50
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
4 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
350
75
145
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
350
75
24
V
V
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
75
V
VC (100%) =
I C (100%) =
350
75
V
A
A
30
ns
tr
=
12
ns
Copyright Vincotech
51
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Input Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
fitted
IF
VF
350
75
V
75
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
4,66
μC
116
84
A
t rr
=
ns
Copyright Vincotech
52
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with press-fit pins
Ordering Code
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
Name
Text
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
9
6
3
0
0
0
0
3
6
Function
G22
52,3
52,3
52,3
49,3
46,8
30,75
28,25
25,25
25,25
2
S14
G14
Ph2
Ph2
Ph1
Ph1
G12
S12
3
4
5
6
7
8
9
10
11
12
13
25,25
19,75
19,75
12,6
9
0
G21
Boost2
Boost2
DC+In2
2,5
0
14
15
16
17
18
19
20
21
22
12,6
7,1
7,1
0
2,5
0
DC+In2
DC+In1
2,5
0
DC+In1
Boost1
0
2,5
15,1
17,6
26
Boost1
11,1
11,1
11,1
11,1
DC+Boost
DC+Boost
DC-Boost
DC-Boost
28,3
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
0
28,3
28,3
28,3
28,3
28,3
28,3
28,3
28,3
28,3
28,3
17,7
17,7
11,2
8,7
G25
S25
3
19,2
22,2
26,4
31,3
36,8
41,9
47,4
52,3
40,85
37,85
39,35
39,35
52,3
S27
G27
G11
S11
Therm1
Therm2
S13
G13
DC-2
DC-1
DC+
DC+
A20
17,3
Copyright Vincotech
53
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T13, T14
IGBT
650 V
75 A
75 A
50 A
75 A
50 A
50 A
75 A
75 A
75 A
10 A
Low Buck Switch
High Buck Switch
Buck Diode
T12, T14
D21, D22
T21, T22
D12, D14
D20
IGBT
FWD
650 V
650 V
650 V
650 V
650 V
650 V
650 V
650 V
1600 V
630 V
IGBT
Boost Switch
FWD
Low Boost Diode
High Boost Diode
Input Boost Switch
Input Boost Diode
ByPass Diode
FWD
T25, T27
D25, D27
D26, D28
D45, D47
C10
IGBT
FWD
Rectifier
Prot. Diode
Capacitor
NTC
Input Boost Sw. Protection Diode
Capacitor (DC)
Rt
Thermistor
Copyright Vincotech
54
04 May. 2018 / Revision 2
10-FY07BVA075S5-LF45E18
10-PY07BVA075S5-LF45E18Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xY07BVA075S5-LF45E18x-D2-14
04 May. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
55
04 May. 2018 / Revision 2
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