10-PY07BVA050S5-LF44E18Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;型号: | 10-PY07BVA050S5-LF44E18Y |
厂家: | VINCOTECH |
描述: | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
文件: | 总51页 (文件大小:6467K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Low Buck / High Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
50
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
150
73
A
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
1
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
33
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
60
A
50
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
50
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
150
73
A
W
V
±20
175
Maximum junction temperature
°C
Low Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
33
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
60
A
50
W
°C
Tjmax
Maximum junction temperature
175
High Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
33
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
60
A
50
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
50
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
150
73
A
W
V
±20
175
Maximum junction temperature
°C
Input Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
47
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
100
63
A
W
°C
Tjmax
Maximum junction temperature
175
ByPass Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1600
88
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
600
1800
105
150
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
Input Boost Sw. Protection Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
14
V
A
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
20
A
33
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
3
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Capacitor (DC)
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
-55…+125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
6000
2500
V
Visol
Isolation voltage
AC Voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
8,16 / 7,93
> 200
mm
mm
Solder pins / Press-fit pins
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Low Buck / High Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
3,2
4
4,8
V
V
1,35
1,41
1,43
1,75
VCEsat
Collector-emitter saturation voltage
15
50
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
3100
12
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
650
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,29
K/W
Dynamic
25
64
65
66
Turn-on delay time
td(on)
125
150
25
8
Rise time
tr
125
150
25
10
10
81
Rgon = 8 Ω
Rgoff = 8 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
125
150
95
99
12
20
±15
350
50
tf
23
0,689
0,887
0,874
0,456
0,732
0,764
Qr
FWD
Qr
FWD
Qr
FWD
= 2,2 μC
= 3,4 μC
= 3,9 μC
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
mWs
Eoff
Copyright Vincotech
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10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Buck Diode
Static
25
125
150
1,52
1,46
1,44
1,92
1,6
Forward voltage
VF
IR
30
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Dynamic
25
70
77
78
IRRM
Peak recovery current
125
150
25
A
59
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
100
111
ns
di/dt = 6812 A/μs
di/dt = 5829 A/μs ±15
di/dt = 5655 A/μs
2,25
3,43
3,88
0,608
0,922
1,04
5343
4706
4865
350
50
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
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10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
3,2
4
4,8
V
V
1,35
1,41
1,43
1,75
VCEsat
Collector-emitter saturation voltage
15
50
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
3100
12
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
650
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic (T21-D12)
Turn-on delay time
1,29
K/W
25
65
65
66
td(on)
125
150
25
11
Rise time
tr
125
150
25
12
11
80
Rgon = 8 Ω
Rgoff = 8 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
125
150
96
101
11
20
24
0,429
0,578
0,650
0,450
0,714
0,787
±15
350
50
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 1,5 μC
= 2,5 μC
= 2,9 μC
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
mWs
Eoff
Copyright Vincotech
7
13 Mar. 2019 / Revision 3
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10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Low Boost Diode
Static
25
125
150
1,52
1,46
1,44
1,92
1,6
Forward voltage
VF
IR
30
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Dynamic (T21-D12)
25
48
57
60
IRRM
125
150
25
Peak recovery current
A
63
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
102
113
ns
di/dt = 5070 A/μs
di/dt = 3762 A/μs
di/dt = 3712 A/μs
1,47
2,52
2,87
0,423
0,686
0,779
2718
739
Recovered charge
±15
350
50
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
888
Copyright Vincotech
8
13 Mar. 2019 / Revision 3
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10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
3,2
4
4,8
V
V
1,35
1,41
1,43
1,75
VCEsat
Collector-emitter saturation voltage
15
50
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
3100
12
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
650
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,29
K/W
Dynamic (T21-D20)
25
61
66
66
Turn-on delay time
td(on)
125
150
25
9
Rise time
tr
125
150
25
11
11
79
Rgon = 8 Ω
Rgoff = 8 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
125
150
96
100
9
19
23
0,493
0,568
0,556
0,362
0,688
0,784
±15
350
50
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 1,4 μC
= 2,5 μC
= 2,9 μC
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
mWs
Eoff
Copyright Vincotech
9
13 Mar. 2019 / Revision 3
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10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
High Boost Diode
Static
25
125
150
1,52
1,46
1,44
1,92
1,6
Forward voltage
VF
IR
30
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Dynamic (T21-D20)
25
52
59
63
IRRM
125
150
25
Peak recovery current
A
60
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
105
115
ns
di/dt = 4573 A/μs
di/dt = 4041 A/μs
di/dt = 4075 A/μs
1,444
2,475
2,932
0,362
0,682
0,811
3629
771
Recovered charge
±15
350
50
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
814
Copyright Vincotech
10
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Input Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
3,2
4
4,8
V
V
1,35
1,41
1,43
1,75
VCEsat
Collector-emitter saturation voltage
15
50
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
3100
12
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
650
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,29
K/W
25
26
25
25
Turn-on delay time
td(on)
125
150
25
9
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
10
11
137
156
160
12
Rgon = 8 Ω
Rgoff = 8 Ω
ns
Turn-off delay time
Fall time
td(off)
0 / 15
400
50
tf
17
21
1,07
1,48
1,37
0,513
0,813
0,902
Qr
FWD
Qr
FWD
Qr
FWD
= 1,6 μC
= 3,2 μC
= 3,6 μC
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
mWs
Eoff
125
150
Copyright Vincotech
11
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10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Input Boost Diode
Static
25
125
150
1,50
1,44
1,42
1,92
2,65
Forward voltage
VF
IR
50
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,50
K/W
Dynamic
25
47
63
66
IRRM
125
150
25
Peak recovery current
A
58
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
91
98
ns
di/dt = 6127 A/μs
di/dt = 5448 A/μs
di/dt = 5124 A/μs
1,61
3,20
3,61
0,424
0,884
0,993
564
642
635
Recovered charge
0 / 15
400
50
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
ByPass Diode
Static
25
125
150
1,14
1,09
1,08
Forward voltage
VF
IR
65
V
Reverse leakage current
1600
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,67
K/W
Copyright Vincotech
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10-PY07BVA050S5-LF44E18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
Vr [V] IF [A]
Min
Max
Input Boost Sw. Protection Diode
Static
25
125
1,67
1,56
1,87
0,14
VF
IR
Forward voltage
Reverse leakage current
Thermal
10
V
650
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,87
100
K/W
Capacitor (DC)
Capacitance
C
nF
%
%
Tolerance
-10
+10
2,5
Dissipation factor
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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datasheet
Low Buck / High Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,29
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,09E-01
6,00E-01
3,10E-01
1,08E-01
6,63E-02
5,36E-01
8,05E-02
1,69E-02
4,25E-03
5,30E-04
Copyright Vincotech
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datasheet
Low Buck / High Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
IC
=
50
A
Ts
=
80
ºC
VGE
=
±15
Tjmax
V
Tj =
Copyright Vincotech
15
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10-PY07BVA050S5-LF44E18Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
)
= f( )
tp
I F
VF
Z th(j-s)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
=
250
μs
25 °C
125 °C
150 °C
=
/
tp
D
tp
T
:
Tj
1,92
K/W
R th(j-s)
FWD thermal model values
(K/W)
R
τ
(s)
9,41E-02
3,44E-01
8,56E-01
3,61E-01
1,37E-01
1,27E-01
2,25E+00
2,12E-01
5,84E-02
9,83E-03
2,89E-03
4,79E-04
Copyright Vincotech
16
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,29
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,09E-01
6,00E-01
3,10E-01
1,08E-01
6,63E-02
5,36E-01
8,05E-02
1,69E-02
4,25E-03
5,30E-04
Copyright Vincotech
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13 Mar. 2019 / Revision 3
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10-PY07BVA050S5-LF44E18Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
IC
=
50
A
Ts
=
80
ºC
VGE
=
±15
Tjmax
V
Tj =
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low / High Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
)
= f( )
tp
I F
VF
Z th(j-s)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
=
250
μs
25 °C
125 °C
150 °C
=
/
tp
D
tp
T
:
Tj
1,92
K/W
R th(j-s)
FWD thermal model values
(K/W)
R
τ
(s)
9,41E-02
3,44E-01
8,56E-01
3,61E-01
1,37E-01
1,27E-01
2,25E+00
2,12E-01
5,84E-02
9,83E-03
2,89E-03
4,79E-04
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,29
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,09E-01
6,00E-01
3,10E-01
1,08E-01
6,63E-02
5,36E-01
8,05E-02
1,69E-02
4,25E-03
5,30E-04
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
IC
=
50
A
Ts
=
80
ºC
VGE
=
±15
Tjmax
V
Tj =
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,50
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,03E-01
2,05E-01
6,39E-01
3,39E-01
1,71E-01
4,45E-02
4,73E+00
5,53E-01
8,31E-02
2,02E-02
4,42E-03
1,30E-03
Copyright Vincotech
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13 Mar. 2019 / Revision 3
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10-PY07BVA050S5-LF44E18Y
datasheet
ByPass Diode Characteristics
figure 1.
Bypass diode
figure 2.
Bypass diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
200
Z
150
100
50
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,67
Tj:
R th(j-s)
K/W
Diode thermal model values
R (K/W)
τ
(s)
4,15E-02
7,27E-02
1,99E-01
2,89E-01
4,54E-02
2,21E-02
9,04E+00
1,12E+00
1,91E-01
6,88E-02
7,76E-03
1,16E-03
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
2,87
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Buck / High Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
50
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
±15
8
V
V
Ω
350
±15
50
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Buck / High Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
350
±15
8
°C
V
150
350
±15
50
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
25 °C
±15
8
±15
50
VGE
R gon
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Buck / High Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
±15
8
V
V
Ω
350
±15
50
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
±15
8
V
V
Ω
350
±15
50
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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13 Mar. 2019 / Revision 3
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10-PY07BVA050S5-LF44E18Y
datasheet
Low Buck / High Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/
dt
diF/dt
t
i
t
dirr
/
dt
dirr/dt
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
50
V
25 °C
125 °C
150 °C
±15
8
:
Tj
V
A
:
VGE
=
=
Tj
R gon
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
8
8
R gon
R goff
=
=
Ω
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Buck / High Buck Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
8 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
350
50
V
350
50
V
A
A
95
ns
65
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
50
V
350
50
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
20
ns
tr
=
10
ns
Copyright Vincotech
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13 Mar. 2019 / Revision 3
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10-PY07BVA050S5-LF44E18Y
datasheet
Low Buck / High Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
fitted
IF
VF
350
50
V
50
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
3,43
μC
77
A
t rr
=
100
ns
Low Buck / High Buck Measurement circuits
figure 1.
Vd
125uH
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
50
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
±15
8
V
V
Ω
350
±15
50
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
350
±15
8
°C
V
150
350
±15
50
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
25 °C
VGE
R gon
=
=
±15
8
Tj:
VGE
I C
=
±15
50
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
±15
8
V
V
Ω
350
±15
50
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
±15
8
V
V
Ω
350
±15
50
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/
dt
diF/dt
t
i
t
i
dirr/dt
dirr
/
dt
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
50
V
25 °C
125 °C
150 °C
±15
8
:
Tj
V
A
:
VGE
=
=
=
Tj
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
8
8
R gon
R goff
=
=
Ω
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Boost Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
8 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
VGE
IC
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
50
V
350
50
V
A
A
96
ns
65
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
50
V
350
50
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
20
ns
tr
=
12
ns
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Low Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
fitted
IF
VF
350
50
V
50
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
2,52
μC
57
A
t rr
=
102
ns
Low Boost Measurement circuits
figure 1.
Copyright Vincotech
36
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
High Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
50
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
±15
8
V
V
Ω
350
±15
50
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
High Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
350
±15
8
°C
V
150
350
±15
50
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
25 °C
±15
8
±15
50
VGE
R gon
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
38
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
High Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
±15
8
V
V
Ω
350
±15
50
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
±15
8
V
V
Ω
350
±15
50
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
High Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
i
t
i
dirr/dt
dirr
/
dt
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
50
V
25 °C
125 °C
150 °C
±15
8
:
Tj
V
A
:
VGE
=
=
Tj
R gon
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
8
8
R gon
R goff
=
=
Ω
Copyright Vincotech
40
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Hihg Boost Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
8 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
50
V
350
50
V
A
A
96
ns
66
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
50
V
350
50
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
19
ns
tr
=
11
ns
Copyright Vincotech
41
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
High Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
fitted
IF
VF
350
50
V
50
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
2,48
μC
59
A
t rr
=
105
ns
High Boost Measurement circuits
figure 1.
Copyright Vincotech
42
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
400
0 / 15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
50
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
400
0 / 15
8
V
V
Ω
400
0 / 15
50
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
43
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
400
0 / 15
8
°C
V
150
400
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
0 / 15
50
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
400
At
VCE
=
V
V
Ω
At
VCE
=
400
V
V
A
25 °C
25 °C
VGE
R gon
=
=
0 / 15
8
Tj:
VGE
I C
=
0 / 15
50
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
44
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
400
0 / 15
8
V
V
Ω
400
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
0 / 15
50
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
400
0 / 15
8
V
V
Ω
400
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
0 / 15
50
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
45
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
i
t
i
dirr/dt
dirr
/
dt
400
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
400
0 / 15
50
V
25 °C
125 °C
150 °C
0 / 15
8
:
Tj
V
A
:
VGE
=
=
Tj
R gon
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
8
8
R gon
R goff
=
=
Ω
Copyright Vincotech
46
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
8 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
400
50
V
400
50
V
A
A
156
ns
25
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
400
50
V
400
50
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
17
ns
tr
=
10
ns
Copyright Vincotech
47
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Input Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
fitted
IF
VF
400
50
V
50
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
3,20
μC
63
A
t rr
=
91
ns
Copyright Vincotech
48
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with press-fit pins
Ordering Code
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
Name
NN-NNNNNNNNNNNNNN-TTTTTTVV
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
9
6
3
0
0
0
0
3
6
9
Function
G22
S14
52,3
2
52,3
3
52,3
G14
Ph2
4
49,3
5
46,8
Ph2
6
30,75
28,25
25,25
25,25
25,25
Ph1
7
Ph1
8
G12
S12
9
10
G21
11
12
13
19,75
19,75
12,6
0
2,5
0
Boost2
Boost2
DC+In2
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
12,6
7,1
2,5
0
DC+In2
DC+In1
DC+In1
Boost1
Boost1
DC+Boost
DC+Boost
DC-Boost
DC-Boost
G25
7,1
2,5
0
0
0
2,5
11,1
11,1
11,1
11,1
0
15,1
17,6
26
28,3
28,3
28,3
28,3
28,3
28,3
28,3
28,3
28,3
28,3
28,3
17,7
17,7
11,2
8,7
3
S25
19,2
22,2
26,4
31,3
36,8
41,9
47,4
52,3
40,85
37,85
39,35
39,35
52,3
S27
G27
G11
S11
Therm1
Therm2
S13
G13
DC-2
DC-1
DC+
DC+
17,3
A20
Copyright Vincotech
49
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
Current
50 A
Function
Low Buck Switch
Comment
T11, T13
T12, T14
D21, D22
T21, T22
D12, D14
D20
IGBT
FWD
650 V
650 V
650 V
650 V
650 V
650 V
650 V
1600 V
650 V
630 V
50 A
30 A
50 A
30 A
30 A
50 A
50 A
65 A
10 A
High Buck Switch
Buck Diode
IGBT
Boost Switch
FWD
Low Boost Diode
High Boost Diode
Input Boost Switch
Input Boost Diode
ByPass Diode
FWD
T25, T27
D25, D27
D26, D28
D45, D47
C10
IGBT
FWD
Rectifer
FWD
Input Boost Sw. Protection Diode
Capacitor (DC)
Capacitor
NTC
Rt
Thermistor
Copyright Vincotech
50
13 Mar. 2019 / Revision 3
10-FY07BVA050S5-LF44E18
10-PY07BVA050S5-LF44E18Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xY07BVA050S5-LF44E18x-D3-14
13 Mar. 2019
Correction of Ic/If values
1,2,3
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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13 Mar. 2019 / Revision 3
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