10-PY07LBA015ME-PG08J68T [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-PY07LBA015ME-PG08J68T |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总19页 (文件大小：6848K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY07LBA015ME-PG08J68T
datasheet
flowNPFC 1 SiC
650 V / 150 A
Topology features
flow 1 12 mm housing
● Integrated DC capacitor
● Neutral Boost PFC
● SiC MOSFET
● Temperature sensor
Component features
● High Blocking Voltage with low drain source on state resistance
● High speed SiC-MOSFET technology
● Resistant to Latch-up
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Charging Stations
● Energy Storage Systems
● UPS
Types
● 10-PY07LBA015ME-PG08J68T
Copyright Vincotech
1
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VDSS
Drain-source voltage
650
77
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
396
A
Ptot
Total power dissipation
145
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
73
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
273
390
172
175
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 125
°C
Copyright Vincotech
2
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
8,01
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
3
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
25
18,5
21,8
23,5
20(1)
rDS(on)
Drain-source on-state resistance
15
52,8
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
VDS = VGS
0
0,01452 25
1,8
2,6
30
3,6
300
96
V
15
0
0
25
25
nA
µA
Ω
650
400
600
3
1
Qg
-4/15
52,8
25
25
25
189
4800
300
24
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 1 Mhz
0
0
0
pF
V
26,4
4,8
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,66
K/W
Rth(j-s)
25
23,9
20,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
20,17
22,43
19,43
18,92
110,84
124,69
128,71
14,53
15,73
16,53
0,565
0,458
0,444
0,664
0,667
0,679
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
350
75
tf
125
150
25
ns
QrFWD=0,266 µC
QrFWD=0,299 µC
QrFWD=0,301 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,5
1,8(1)
600
VF
IR
Forward voltage
60
125
150
1,86
2,01
V
Reverse leakage current
Thermal
Vr = 1200 V
25
105
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,55
K/W
Rth(j-s)
25
26,56
29,79
30,04
16,74
16,63
16,63
0,266
0,299
0,301
0,039
0,05
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3707 A/µs
di/dt=4228 A/µs
di/dt=4715 A/µs
Qr
Recovered charge
0/15
350
75
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
0,052
3964,7
4356,99
4308,46
(dirf/dt)max
125
150
Copyright Vincotech
5
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
100
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
6
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
250
250
200
150
100
50
VGS
:
-4 V
-2 V
0 V
200
150
100
50
1 V
3 V
5 V
7 V
9 V
11 V
13 V
15 V
17 V
19 V
21 V
0
-50
-100
-150
-200
-250
0
0,0
2,5
5,0
7,5
10,0
12,5
-15
-10
-5
0
5
10
15
V
DS(V)
VDS(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGS
=
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 21 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
120
10
100
80
60
40
20
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,656
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,01E-02
1,33E-01
2,67E-01
1,37E-01
5,88E-02
2,25E+00
2,60E-01
3,60E-02
5,59E-03
7,21E-04
Copyright Vincotech
7
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Switch Characteristics
figure 5.
MOSFET
figure 6.
MOSFET
Safe operating area
Gate voltage vs gate charge
ID = f(VDS
)
VGS = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
5,0
1
2,5
0,0
0,1
0,01
-2,5
-5,0
1
10
100
1000
10000
0
25
50
75
100
125
150
175
200
V
DS(V)
Qg(nC)
D =
ID
=
single pulse
17.6
25
A
Ts =
Tj =
80
15
°C
V
°C
VGS
=
Tj =
Tjmax
Copyright Vincotech
8
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
0,2
0,1
50
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,553
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,04E-02
1,22E-01
2,51E-01
9,18E-02
1,84E-02
2,17E+00
2,02E-01
3,93E-02
5,73E-03
8,83E-04
Copyright Vincotech
9
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Thermistor Characteristics
figure 9.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
10
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Switching Characteristics
figure 10.
MOSFET
figure 11.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
Eon
0
25
50
75
100
125
150
0
5
10
15
20
25
Rg(Ω)
ID(A)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
350
0/15
8
V
V
Ω
Ω
125 °C
150 °C
350
0/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 12.
FWD
figure 13.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
5
10
15
20
25
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
350
0/15
8
V
V
Ω
125 °C
150 °C
350
0/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
11
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Switching Characteristics
figure 14.
MOSFET
figure 15.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
tr
td(on)
tf
tr
td(on)
tf
-2
-2
10
10
-3
10
-3
10
0
25
50
75
100
125
150
0
5
10
15
20
25
Rg(Ω)
ID(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
0/15
8
°C
V
150
350
0/15
75
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
V
Ω
Ω
A
8
figure 16.
FWD
figure 17.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
5
10
15
20
25
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
0/15
75
V
V
A
25 °C
25 °C
VGS
0/15
8
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
12
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Switching Characteristics
figure 18.
FWD
figure 19.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0
5
10
15
20
25
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
0/15
75
V
V
A
25 °C
25 °C
0/15
8
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 20.
FWD
figure 21.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
25
50
75
100
125
150
0
5
10
15
20
25
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
0/15
8
V
V
Ω
At
350
0/15
75
V
V
A
25 °C
25 °C
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
13
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Switching Characteristics
figure 22.
FWD
figure 23.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
7000
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
0
5
10
15
20
25
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
0/15
75
V
V
A
25 °C
25 °C
VGS
0/15
8
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 24.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
125
ID MAX
100
75
50
25
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
150
8
°C
Rgon
Rgoff
=
=
Ω
Ω
8
Copyright Vincotech
14
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Switching Definitions
figure 25.
MOSFET
figure 26.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 27.
MOSFET
figure 28.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
15
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Boost Switching Definitions
figure 29.
FWD
figure 30.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 31.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
E
rec
tErec
P
rec
t (µs)
Copyright Vincotech
16
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PY07LBA015ME-PG08J68T
10-PY07LBA015ME-PG08J68T-/7/
10-PY07LBA015ME-PG08J68T-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-
DC-
DC-
DC-
GND
GND
GND
GND
DC+
DC+
DC+
DC+
Ph
30,3
27,6
24,9
24,9
17,9
17,9
17,9
17,9
24,9
24,9
27,6
30,3
50,4
53,1
50,4
53,1
50,6
53,1
50,6
53,1
2
0
3
0
4
2,7
0
5
6
2,7
26,3
29
7
8
9
29
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
26,3
29
29
16,3
16,55
13,8
13,55
9,2
9,2
6,2
6,2
Ph
Ph
Ph
Ph
Ph
Ph
Ph
not assembled
not assembled
not assembled
not assembled
11,3
15,7
12,7
9,7
0
G13
11,3
11,3
S134
G14
17,75
11,25
Therm2
Therm2
0
Copyright Vincotech
17
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Pinout
DC+
9,10,11,12
D13
C20
T14
T13
Ph
GND
5,6,7,8
13,14,15,16,17,18,19,20
C10
25
G14 S10 G13
26
27
D14
Rt
DC-
Therm1
28
Therm2
1,2,3,4
29
Identification
Component
Voltage
Current
Function
Comment
ID
T13, T14
D13, D14
C10, C20
Rt
MOSFET
FWD
650 V
1200 V
630 V
15 mΩ
60 A
Boost Switch
Boost Diode
Capacitor (DC)
Thermistor
Capacitor
Thermistor
Copyright Vincotech
18
26 Apr. 2023 / Revision 1
10-PY07LBA015ME-PG08J68T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY07LBA015ME-PG08J68T-D1-14
26 Apr. 2023
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
19
26 Apr. 2023 / Revision 1
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