10-PY12B2A040MS-LP25L08Y [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-PY12B2A040MS-LP25L08Y |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总19页 (文件大小：7202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY12B2A040MS-LP25L08Y
datasheet
flowBOOST 1 dual
1200 V / 40 mΩ
Features
flow 1 12 mm housing
● Dual Booster
● High Performance Flying Capacitor Topology
● Latest SiC Technology
● Optimized for 1500 Vdc applications
● Integrated flying capacitors
● Integrated DC link capacitors
● Integrated NTC
● Low inductance housing
Schematic
Target applications
● Power Supply
● Solar Inverters
● UPS
Types
● 10-PY12B2A040MS-LP25L08Y
Copyright Vincotech
1
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VDSS
Drain-source voltage
1200
46
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
136
A
Ptot
Total power dissipation
89
W
0 / 22
-5 / 22
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
47
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
112
175
W
°C
Tjmax
Maximum junction temperature
Flying Capacitor
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
0 ... 125
°C
Capacitor (DC)
VMAX
Maximum DC voltage
1500
V
Top
Operation Temperature
0 ... 125
°C
Copyright Vincotech
2
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
>12,7
12,02
≥ 600
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Switch
Static
25
36
38
42
50(1)
rDS(on)
Drain-source on-state resistance
18
30
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Short-circuit input capacitance
Reverse transfer capacitance
Thermal
0
0,003
25
25
25
3,6
4,6
5,6
400
100
V
22
0
0
nA
µA
Ω
1200
1,5
4000
92
Ciss
Crss
0
10
0
25
pF
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,07
K/W
25
22,4
17,92
17,28
16,32
12,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
12,48
70,08
83,84
88,32
17,14
18,37
18,4
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/18
700
30
tf
125
150
25
ns
QrFWD=0,173 µC
QrFWD=0,218 µC
QrFWD=0,224 µC
0,818
0,631
0,609
0,131
0,128
0,131
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,41
1,66
1,78
2(1)
VF
IR
Forward voltage
30
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
900
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,85
K/W
25
12,59
16,94
18,05
14,2
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
13,57
13,59
0,173
0,218
0,224
0,027
0,05
ns
di/dt=2054 A/µs
di/dt=2801 A/µs
di/dt=2985 A/µs
Qr
Recovered charge
0/18
700
30
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
0,053
2590
3537
3695
(dirf/dt)max
125
150
Copyright Vincotech
5
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Flying Capacitor
Static
DC bias voltage =
0 V
C
Capacitance
Tolerance
25
47
nF
%
-10
10
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
33
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
2,5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Boost Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
80
80
VGS
:
-4 V
-2 V
0 V
60
40
2 V
60
40
20
4 V
6 V
8 V
20
10 V
12 V
14 V
16 V
18 V
20 V
0
-20
-40
-60
-80
0
0
1
2
3
4
5
-10,0 -7,5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
18
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
35
10
30
25
20
15
10
5
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2,5
5,0
7,5
10,0
12,5
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,069
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,75E-02
2,22E-01
4,61E-01
2,27E-01
9,22E-02
2,73E+00
3,09E-01
6,60E-02
8,32E-03
7,76E-04
Copyright Vincotech
7
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Boost Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
18
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
8
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
80
60
40
20
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,849
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,03E-02
1,42E-01
4,17E-01
1,75E-01
6,57E-02
3,42E+00
3,82E-01
7,83E-02
9,68E-03
1,12E-03
Copyright Vincotech
9
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
10
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Boost Switching Characteristics
figure 9.
MOSFET
figure 10.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
700
0/18
8
V
V
Ω
Ω
125 °C
150 °C
700
0/18
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
700
0/18
8
V
V
Ω
125 °C
150 °C
700
0/18
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
11
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Boost Switching Characteristics
figure 13.
MOSFET
figure 14.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
tr
td(on)
tr
tf
tf
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/18
8
°C
V
150
700
0/18
30
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
8
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
700
V
V
Ω
At
700
V
V
A
25 °C
25 °C
0/18
8
125 °C
150 °C
0/18
30
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
12
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Boost Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
700
V
V
Ω
At
700
0/18
30
V
V
A
25 °C
25 °C
0/18
8
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
45
40
35
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
10
20
30
40
50
60
ID(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
700
V
V
Ω
At
700
0/18
30
V
25 °C
25 °C
0/18
8
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
13
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
6000
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
700
V
V
Ω
At
700
V
V
A
25 °C
25 °C
VGS
0/18
8
125 °C
150 °C
0/18
30
125 °C
150 °C
Tj:
Tj:
Rgon
figure 23.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
70
ID MAX
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
14
31 Mar. 2021 / Revision 1
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datasheet
Boost Switching Definitions
figure 24.
MOSFET
figure 25.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
MOSFET
figure 27.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
15
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Boost Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 30.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
16
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PY12B2A040MS-LP25L08Y
10-PY12B2A040MS-LP25L08Y-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
Boost2
Boost2
S25
52,5
52,5
46
2,7
0
2
3
0
4
43
1,4
1,4
0
G25
5
9,5
6,5
0
G15
6
S15
7
0
Boost1
Boost1
8
0
2,7
9
not assembled
28,5 DC+Boost1
28,5 DC+Boost1
10
11
12
8,6
11,3
20,3
28,5
28,5
28,5
28,5
DC-
Boost1
DC-
Boost1
DC-
13
14
15
23
26
Boost2
DC-
28,7
Boost2
16
17
18
19
20
21
22
23
24
25
26
27
28
37,7
40,4
49,5
52,5
28,5 DC+Boost2
28,5 DC+Boost2
28,5
28,5
Therm1
Therm2
not assembled
8,35
42,1
39,1
S27
G27
8,85
38,65
32,25
16,75
10,35
13,4
23,4
FC21
FC22
FC12
FC11
G17
23,4
23,4
23,4
8,85
10,4
8,35
S17
Copyright Vincotech
17
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Pinout
DC+Boost1
10,11
DC+Boost2
16,17
D17
D15
D27
FC11
26
FC21
23
D25
C15
C17
C25
C27
Boost1
7,8
Boost2
1,2
T15
T25
5
6
4
G15
S15
G25
S25
3
FC12
25
FC22
24
T17
T27
27
22
G17
S17
G27
S27
21
28
Rt
DC-Boost1
12,13
DC-Boost2
14,15
Therm1
18
Therm2
19
Identification
Component
Voltage
Current
Function
Comment
ID
T15, T17, T25, T27
D15, D17, D25, D27
C15, C25
MOSFET
FWD
1200 V
1200 V
1000 V
1500 V
40 mΩ
30 A
Boost Switch
Boost Diode
Capacitor
Capacitor
Thermistor
Flying Capacitor
Capacitor (DC)
Thermistor
C17, C27
Rt
Copyright Vincotech
18
31 Mar. 2021 / Revision 1
10-PY12B2A040MS-LP25L08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY12B2A040MS-LP25L08Y-D1-14
31 Mar. 2021
Initial Release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
19
31 Mar. 2021 / Revision 1
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