10-PY126TA025SH-L826F68Y [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-PY126TA025SH-L826F68Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总16页 (文件大小：2983K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY126TA025SH-L826F68Y
datasheet
flowPACK 1
1200 V / 25 A
Features
flow 1 12 mm housing
● High speed IGBT4
● Tandem diodes for improved thermal performance
● Integrated thermal sensor
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-PY126TA025SH-L826F68Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
31
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
75
A
94
W
V
±20
tSC
Tj ≤ 150 °C
VGE = 15 V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
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08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1300
29
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60
A
Tj = Tjmax
85
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
7,9
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00085 25
25
5,3
5,8
6,3
V
V
1,78
1,98
2,38
2,49
2,42
VCEsat
Collector-emitter saturation voltage
15
25
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2,4
µA
nA
Ω
20
120
none
1430
115
75
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
960
25
115
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,01
K/W
Dynamic
25
38
38
38
td(on)
125
150
25
Turn-on delay time
4
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
5
6
180
254
273
35
Rgon = 8 Ω
Rgoff = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
600
15
tf
76
98
0,311
0,509
0,559
0,619
1,106
Qr
FWD
Qr
FWD
Qr
FWD
= 0,5 μC
= 1,5 μC
= 1,9 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,214
Copyright Vincotech
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08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
2,46
3,40
3,18
3,10
3,74
0,36
VF
IR
125
150
Forward voltage
30
V
Reverse leakage current
1300
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,12
K/W
Dynamic
25
37
IRRM
125
150
25
37
39
26
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
127
146
ns
di/dt = 2341 A/μs
di/dt = 1563 A/μs
di/dt = 1664 A/μs
0,484
1,541
1,904
0,134
0,651
0,830
8397
2812
2731
±15
600
15
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
80
80
I
I
60
60
40
20
40
20
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
25
I
20
Z
100
15
10
5
10-1
0,5
0,2
0,1
10-2
0,05
0,02
0,01
0,005
0
10-3
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,01
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,44E-02
2,46E-01
4,48E-01
1,38E-01
5,48E-02
3,85E-02
1,03E+00
1,79E-01
5,38E-02
1,04E-02
1,66E-03
8,73E-04
Copyright Vincotech
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08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs Gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
16
100
1ms
10ms
100ms
DC
100µs
10µs
V
I
14
240 V
12
10
8
10
960 V
1
6
4
0,1
2
0
0
0,01
1
20
40
60
80
100
120
140
10
100
1000
10000
QG (nC)
VC E (V)
At
At
D =
single pulse
80
I C=
25
A
Ts
VGE
Tj
=
ºC
=
±15
Tjmax
V
=
figure 7.
IGBT
figure 8.
Typical short circuit current as a function of VGE
IGBT
Short circuit duration as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
50
200
I
180
t
40
160
140
120
100
80
30
20
10
0
60
40
20
0
Copyright Vincotech
6
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
90
75
60
45
30
15
0
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,12
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
4,97E-02
1,25E-01
3,42E-01
3,04E-01
1,52E-01
5,32E-02
9,07E-02
4,40E+00
7,14E-01
1,43E-01
3,84E-02
7,25E-03
1,45E-03
2,17E-04
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
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08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
2,5
1,6
E
E
Eoff
Eoff
2
Eoff
1,2
Eoff
Eon
Eon
1,5
1
0,8
0,4
0
Eoff
Eon
Eoff
Eon
Eon
Eon
0,5
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
Rg (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
=
600
±15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
1
1,2
Erec
E
E
Erec
0,8
0,9
Erec
Erec
0,6
0,4
0,2
0
0,6
0,3
0
Erec
Erec
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
I C (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
600
±15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
8
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
td(off)
td(off)
tf
0,1
0,1
tf
td(on)
tr
tr
td(on)
0,01
0,01
0,001
0,001
0
5
10
15
20
25
30
35
Rg (Ω)
0
5
10
15
20
25
30
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
600
±15
8
°C
V
Tj =
150
600
±15
15
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,25
0,4
t
t
0,2
trr
trr
trr
trr
0,3
0,15
0,1
0,05
0
trr
0,2
0,1
trr
0
0
0
5
10
15
20
25
30
5
10
15
20
25
30
35
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
600
±15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
9
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
3
2
Qr
Qr
Q
Q
Qr
Qr
2,5
1,5
2
1,5
1
1
Qr
Qr
0,5
0,5
0
0
0
0
5
10
15
20
25 °C
25
30
5
10
15
20
25
30
35
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
600
±15
8
V
V
Ω
Tj:
VCE=
VGE =
I C=
600
±15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
60
80
I
I
50
IRM
IRM
60
IRM
40
30
20
10
40
20
IRM
IRM
IRM
0
0
0
0
5
10
15
20
25
30
35
Rgo n (Ω)
5
10
15
20
25 °C
25
30
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
600
±15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
10
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
18000
10000
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
15000
8000
12000
9000
6000
3000
0
6000
4000
2000
0
0
0
5
10
15
20
25
30
35
Rgon (Ω)
5
10
15
20
25
30
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
600
±15
8
V
V
Ω
Tj:
VCE =
VGE =
I C=
600
±15
15
V
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
60
I
IC MAX
50
I
40
30
20
10
0
I
V
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
11
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
15
V
600
15
V
A
A
tdoff
=
254
ns
tdon
=
38
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
600
15
V
VC (100%) =
I C (100%) =
600
15
5
V
A
A
76
ns
tr
=
ns
Copyright Vincotech
12
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
600
15
V
I F (100%) =
Q r (100%) =
15
A
A
1,54
μC
37
A
trr
=
127
ns
Copyright Vincotech
13
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with Press-fit pins
with thermal paste 12mm housing with Press-fit pins
Ordering Code
10-PY126TA025SH-L826F68Y
10-PY126TA025SH-L826F68Y-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
0
0
0
0
0
0
0
0
0
Functions
DC-123
52,6
49,9
42,65
39,65
35,15
28,4
24
1
2
DC-123
G15
3
4
S15
5
Therm1
Therm2
G13
6
7
8
21
S13
9
12,2
9,2
G11
10
S11
11
12
13
2,7
0
0
0
0
DC-123
DC-123
DC+123
14,65
14
15
16
17
18
19
20
21
22
2,7
0
14,65
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
DC+123
Ph1
2,7
5,4
9,6
12,6
19,6
22,3
25
Ph1
Ph1
S12
G12
Ph2
Ph2
Ph2
23
24
25
26
27
28
29
30
31
29,7
32,7
39,7
42,7
47,2
49,9
52,6
52,6
49,9
28,6
28,6
28,6
28,6
28,6
28,6
28,6
14,65
14,65
S14
G14
S16
G16
Ph3
Ph3
Ph3
DC+123
DC+123
Copyright Vincotech
14
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
IGBT
1200 V
25 A
30 A
Inverter Switch
D11, D12, D13, D14,
D15, D16
FWD
NTC
1300 V
Inverter Diode
Thermistor
Rt
Copyright Vincotech
15
08 Nov. 2018 / Revision 1
10-PY126TA025SH-L826F68Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY126TA025SH-L826F68Y-D1-14
08 Nov. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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08 Nov. 2018 / Revision 1
相关型号：
10-PY12B2A040MS-LP25L08Y
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
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