10-PY12M3A025SH04-M746F43Y [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-PY12M3A025SH04-M746F43Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总31页 (文件大小：2945K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY12M3A025SH04-M746F43Y
datasheet
1200 V / 25 A
flow 3xMNPC 1
Features
flow 1 12 mm housing
● 3 phase mixed voltage component topology
● Neutral point clamped inverter
● Reactive power capability
● Low inductance layout
Schematic
Target applications
● Solar Inverters
● UPS
Types
● 10-PY12M3A025SH04-M746F43Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
Collector-emitter voltage
1200
31
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
75
A
94
W
V
±20
tSC
Tj ≤ 150 °C
VGE = 15 V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
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21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
28
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
40
A
Tj = Tjmax
51
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
IC
Collector-emitter voltage
650
27
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
60
A
57
W
V
±20
tSC
Tj ≤ 150 °C
VGE = 15 V
6
µs
V
Short circuit ratings
VCC
360
Tjmax
Maximum Junction Temperature
175
°C
Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
1200
21
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
30
A
Tj = Tjmax
56
W
°C
Tjmax
Maximum Junction Temperature
175
Copyright Vincotech
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21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
7,89
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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10-PY12M3A025SH04-M746F43Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00085 25
25
5,3
5,8
6,3
V
V
1,78
1,98
2,38
2,49
2,42
Collector-emitter saturation voltage
VCEsat
15
25
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
6
µA
nA
Ω
20
120
none
1430
115
75
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
960
25
115
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,01
K/W
Dynamic
25
71
74
72
td(on)
125
150
25
Turn-on delay time
16
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
19
20
162
217
230
24
Rgoff = 16 Ω
Rgon = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
350
15
tf
84
81
0,240
0,368
0,410
0,380
0,651
0,730
Qr
FWD
Qr
FWD
Qr
FWD
= 0,6 ꢀC
= 1 ꢀC
= 1,2 ꢀC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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10-PY12M3A025SH04-M746F43Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,56
1,51
1,51
1,92
VF
Forward voltage
20
125
150
V
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,88
K/W
Dynamic
25
17
19
19
IRRM
125
150
25
Peak recovery current
A
64
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
100
113
ns
di/dt = 1013 A/ꢀs
di/dt = 1058 A/ꢀs ±15
di/dt = 1027 A/ꢀs
0,619
1,020
1,182
0,131
0,210
0,246
871
350
15
Recovered charge
ꢀC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
132
130
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,00029 25
5,1
5,8
6,4
V
V
25
1,03
1,49
1,67
1,87
15
0
20
125
650
0
25
25
5
µA
nA
Ω
20
150
none
1100
71
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
32
15
480
20
120
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,66
K/W
Dynamic
25
86
85
85
td(on)
125
150
25
Turn-on delay time
16
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
18
18
132
155
159
27
Rgoff = 16 Ω
Rgon = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
350
15
tf
93
89
0,289
0,395
0,416
0,487
0,651
0,685
Qr
FWD
Qr
FWD
Qr
FWD
= 1,3 ꢀC
= 2,3 ꢀC
= 2,6 ꢀC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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10-PY12M3A025SH04-M746F43Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
150
1,80
1,77
2,05
VF
Forward voltage
15
V
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
Rth(j-s)
1,70
K/W
Dynamic
25
21
IRRM
125
150
25
24
24
143
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
309
327
ns
di/dt = 1226 A/ꢀs
di/dt = 1048 A/ꢀs ±15
di/dt = 1011 A/ꢀs
1,321
2,345
2,626
0,357
0,643
0,721
1617
1191
1065
350
15
Recovered charge
ꢀC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
ꢀs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
ꢀs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
ꢀs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,01
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
8,44E-02
2,46E-01
4,48E-01
1,38E-01
5,48E-02
3,85E-02
1,03E+00
1,79E-01
5,38E-02
1,04E-02
1,66E-03
8,73E-04
Copyright Vincotech
8
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs Gate charge
Safe operating area
VGE = f(Q G
)
IC = f(VCE
)
V
V
V
V
I I
I I
At
IC=
At
D =
single pulse
25
A
Ts
VGE
Tj
=
80
ºC
V
=
±15
Tjmax
=
figure 7.
Short circuit duration as a function of VGE
IGBT
figure 8.
Typical short circuit current as a function of VGE
IGBT
tpSC = f(VGE
)
ISC = f(VGE
)
I
I
I
I
t
t
t
t
At
VCE
Tj
At
=
600
150
V
VCE
≤
600
25
V
≤
ºC
Tj
≤
ºC
Copyright Vincotech
9
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
ꢀs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,88
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,42E-02
1,79E-01
8,86E-01
4,50E-01
2,75E-01
3,60E+00
3,95E-01
7,08E-02
1,69E-02
2,45E-03
Copyright Vincotech
10
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
ꢀs
V
25 °C
125 °C
150 °C
tp
=
250
150
ꢀs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
ꢀs
V
25 °C
125 °C
150 °C
D
=
tp
1,66
IGBT thermal model values
(K/W)
/ T
VCE
=
Tj:
R th(j-s)
=
K/W
R
τ
(s)
7,52E-02
1,97E-01
9,36E-01
1,96E-01
1,32E-01
1,27E-01
1,78E+00
2,71E-01
6,94E-02
1,36E-02
3,45E-03
4,12E-04
Copyright Vincotech
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21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs Gate charge
Safe operating area
VGE = f(Q G)
IC = f(VCE
)
V
V
V
V
I I
I I
At
IC=
At
D =
single pulse
20
A
Ts
VGE
Tj =
=
80
ºC
=
±15
Tjmax
V
figure 7.
Short circuit duration as a function of VGE
IGBT
figure 8.
Typical short circuit current as a function of VGE
IGBT
tpSC = f(VGE
)
ISC = f(VGE
)
I
I
I
I
t
t
t
t
At
VCE
Tj ≤
At
=
650
175
V
VCE
≤
650
175
V
ºC
Tj ≤
ºC
Copyright Vincotech
12
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
ꢀs
25 °C
150 °C
tp / T
1,70
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,72E-02
1,30E-01
6,56E-01
4,62E-01
2,31E-01
1,63E-01
2,79E+00
3,93E-01
6,76E-02
1,96E-02
4,04E-03
5,86E-04
Copyright Vincotech
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10-PY12M3A025SH04-M746F43Y
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
125 °C
150 °C
350
±15
15
V
V
A
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
T
j
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
16
V
V
Ω
:
350
±15
15
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
16
°C
V
150
350
±15
15
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
:
Tj
±15
15
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
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10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
25 °C
350
350
V
V
Ω
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
±15
16
:
Tj
125 °C
150 °C
=
±15
15
:
Tj
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I
I I
I I
I
25 °C
At
VCE
=
350
V
V
Ω
At
VCE
=
350
±15
15
V
V
A
25 °C
125 °C
150 °C
±15
16
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
17
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10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I C
)
di F/dt,di rr/dt = f(R gon
)
diF/dt
d
iF
/
d
t
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
15
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V V
V V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
18
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
150 °C
16 Ω
T j
Rgon
R goff
16 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon
=
integrating time for Eon)
tdoff
IC
VGE
IC
VCE
VGE
tEoff
VCE
tEon
-15
VGE (0%) =
-15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
15
V
350
15
V
A
A
0,230
0,733
ꢀs
ꢀs
0,072
0,219
ꢀs
ꢀs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
15
V
350
15
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
0,081
µs
0,020
µs
tr
=
Copyright Vincotech
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21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Poff
Eoff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
5,28
0,73
0,73
kW
mJ
ꢀs
P on (100%) =
Eon (100%) =
5,28
0,41
0,22
kW
mJ
ꢀs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
15
V
A
-19
0,113
A
ꢀs
t rr
=
Copyright Vincotech
20
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
IF
Qr
Erec
tErec
Prec
15
A
5,28
kW
mJ
ꢀs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
1,18
0,23
ꢀC
ꢀs
0,25
0,23
t Qr
=
tErec =
Copyright Vincotech
21
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
125 °C
150 °C
350
±15
15
V
V
A
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
T
j
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
16
V
V
Ω
:
350
±15
15
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
22
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
16
°C
V
150
350
±15
15
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
:
Tj
±15
15
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
23
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
25 °C
350
350
V
V
Ω
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
±15
16
:
Tj
125 °C
150 °C
=
±15
15
:
Tj
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
25 °C
A
t
VCE
=
350
V
V
Ω
At
VCE
=
350
±15
15
V
V
A
25 °C
125 °C
150 °C
±15
16
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
24
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
dirr/dt
i
i
i
i
dir r
/dt
i
i
i
i
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
15
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
25
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
T j
Rgon
R goff
16 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
VGE
IC
VCE
VGE
tEoff
VCE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
V
V
V
A
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
350
15
V
350
15
A
0,155
0,618
ꢀs
ꢀs
0,085
0,252
ꢀs
ꢀs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
V
350
15
0,018
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
15
A
A
0,093
µs
µs
tr
=
Copyright Vincotech
26
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
5,26
0,65
0,62
kW
mJ
ꢀs
P on (100%) =
Eon (100%) =
5,26
0,40
0,25
kW
mJ
ꢀs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
15
V
A
-24
0,309
A
ꢀs
t rr
=
Copyright Vincotech
27
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
IF
Qr
Erec
tErec
Prec
15
A
5,26
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
2,35
1,00
ꢀC
ꢀs
0,64
1,00
mJ
ꢀs
t Qr
=
tErec =
Copyright Vincotech
28
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Ordering Code & Marking
Version
Ordering Code
with thermal paste 12 mm housing with press-fit pins
10-PY12M3A025SH04-M746F43Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
Function
+DC
GND
G3
52,2
46,2
47
1
2
0
3
3
4
40,9
44
0
GND
S3
5
3
6
34,9
34,9
28,9
25,9
22,9
22,9
16,9
16,9
10,9
10,9
6
0
-DC
-DC
GND
S7
7
3
8
0
9
2
10
11
12
13
14
15
16
17
18
19
20
21
22
0
GND
G7
3
0
3
+DC
+DC
GND
G11
GND
S11
-DC
S12
G12
S10
G10
0
3
0
7,9
3
0
0
4,75
1,75
13,25
13,25
8,9
7,9
13,7
10,7
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
21,25
21,25
30,4
33,4
40,15
40,15
50,45
50,45
0
10,7
13,7
9,7
G6
S6
S8
9,7
G8
11,2
8,2
S4
G4
10,7
13,7
16,35
19,35
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
S2
G2
NTC
NTC
OUT3
OUT3
G9
0
5,45
8,25
11,25
14,25
23
S9
S5
26
G5
29
OUT2
OUT2
OUT1
OUT1
G1
31,8
40,4
43,2
46,2
49,2
S1
Copyright Vincotech
29
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T1, T4, T5, T8, T9,
T12
IGBT
1200 V
25 A
20 A
20 A
15 A
Buck Switch
D2, D3, D6, D7, D10,
D11
FWD
IGBT
FWD
NTC
650 V
650 V
Buck Diode
Boost Switch
Boost Diode
Thermistor
T2, T3, T6, T7, T10,
T11
D1, D4, D5, D8, D9,
D12
1200 V
NTC
Copyright Vincotech
30
21 Sep. 2017 / Revision 1
10-PY12M3A025SH04-M746F43Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY12M3A025SH04-M746F43Y-D1-14
21 Sep. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
31
21 Sep. 2017 / Revision 1
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