10-PZ126PA075ME-M909F38Y [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-PZ126PA075ME-M909F38Y |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总19页 (文件大小：6993K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PZ126PA075ME-M909F38Y
datasheet
flowPACK 0 SiC
1200 V / 75 mΩ
Topology features
flow 0 12 mm housing
● 3xHalf Bridge
● Open Emitter configuration
● Kelvin Emitter for improved switching performance
● Integrated DC capacitor
● Split output for transient deactivation of the body diode and
elimination of X-conduction at fast turn-on
● Temperature sensor
Component features
● High Blocking Voltage with low drain source on state resistance
● High speed SiC-MOSFET technology
● Resistant to Latch-up
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
Schematic
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Power Supply
● Solar Inverters
Types
● 10-PZ126PA075ME-M909F38Y
Copyright Vincotech
1
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VDSS
Drain-source voltage
1200
21
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
80
A
Ptot
Total power dissipation
52
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
14
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
47
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
71
A
Tj = Tjmax
40
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
0 ... 125
°C
Copyright Vincotech
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31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
10,19
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inverter Switch
Static
25
81,5
105
117
90(1)
rDS(on)
Drain-source on-state resistance
15
20
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
VDS = VGS
0
0,005
25
25
25
1,7
2,5
10
4
V
15
0
0
250
100
nA
µA
Ω
1200
1
10,5
54
Qg
-4/15
800
20
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
1350
58
f = 1 Mhz
0
0
1000
pF
V
3
10
4,5
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,84
K/W
25
25,21
22,17
22,04
18,34
17,46
17,1
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 21,33 Ω
Rgoff = 21,33 Ω
94
td(off)
Turn-off delay time
Fall time
125
150
25
103,71
106,36
28,56
27,98
28,73
0,278
0,261
0,258
0,099
0,101
0,103
ns
-4/15
600
15
tf
125
150
25
ns
QrFWD=0,123 µC
QrFWD=0,136 µC
QrFWD=0,139 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,51
2,02
2,13
1,8(1)
250
VF
IR
Forward voltage
10
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
30
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,39
K/W
25
6,52
7,25
IRM
Peak recovery current
125
150
25
A
7,46
31,22
31,34
30,87
0,123
0,136
0,139
0,027
0,033
0,034
871,86
625,05
649,49
trr
Reverse recovery time
125
150
25
ns
di/dt=976 A/µs
di/dt=1120 A/µs
di/dt=1090 A/µs
Qr
Recovered charge
-4/15
600
15
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
47
nF
%
Tolerance
-10
10
Thermistor
Static
R
ΔR/R
P
Rated resistance
25
5
kΩ
%
Deviation of R100
R100 = 499 Ω
100
25
3,2
3,3
Power dissipation
Power dissipation constant
B-value
130
1,3
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
3380
Vincotech Thermistor Reference
V
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
60
60
50
VGS
:
-4 V
-2 V
0 V
50
40
30
20
10
0
40
2 V
30
4 V
6 V
20
8 V
10 V
12 V
14 V
16 V
18 V
20 V
10
0
-10
-20
-30
-40
-50
-60
0,0
2,5
5,0
7,5
10,0
12,5
-10,0 -7,5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
25
10
20
15
10
5
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,843
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,10E-01
4,15E-01
7,53E-01
4,02E-01
1,64E-01
1,89E+00
1,55E-01
3,96E-02
6,20E-03
7,03E-04
Copyright Vincotech
7
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
14
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
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31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,392
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,48E-02
2,03E-01
1,24E+00
4,88E-01
3,16E-01
7,23E-02
2,91E+00
3,58E-01
6,46E-02
1,70E-02
3,69E-03
8,74E-04
Copyright Vincotech
9
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
10
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Switching Characteristics
figure 9.
MOSFET
figure 10.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
V
V
Ω
Ω
125 °C
150 °C
600
-4/15
15
V
125 °C
150 °C
Tj:
Tj:
-4/15
21,33
21,33
V
A
Rgon
Rgoff
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
V
V
Ω
125 °C
150 °C
600
-4/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
-4/15
21,33
Rgon
Copyright Vincotech
11
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Switching Characteristics
figure 13.
MOSFET
figure 14.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
tr
td(on)
tr
tf
tf
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
°C
V
150
600
-4/15
15
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
-4/15
21,33
21,33
V
Ω
Ω
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-4/15
15
V
V
A
25 °C
25 °C
-4/15
21,33
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
12
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
V
V
Ω
At
600
-4/15
15
V
V
A
25 °C
25 °C
VGS
VGS
ID
-4/15
21,33
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
12
10
8
12,5
10,0
7,5
IRM
IRM
IRM
6
5,0
IRM
IRM
IRM
4
2,5
2
0
0,0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-4/15
15
V
V
A
25 °C
25 °C
-4/15
21,33
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
13
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
1750
2250
2000
1750
1500
1250
1000
750
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
1500
1250
1000
750
500
250
0
500
250
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
V
V
Ω
At
600
-4/15
15
V
V
A
25 °C
25 °C
VGS
VGS
ID
-4/15
21,33
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 23.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
45
ID MAX
40
35
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
21,33
21,33
Ω
Copyright Vincotech
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31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Switching Definitions
figure 24.
MOSFET
figure 25.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
MOSFET
figure 27.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
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31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Inverter Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 30.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
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31 Aug. 2022 / Revision 1
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datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PZ126PA075ME-M909F38Y
10-PZ126PA075ME-M909F38Y-/7/
10-PZ126PA075ME-M909F38Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+
DC-
E5
33,4
25,4
25,05
25,05
22,25
22,25
22,25
14,25
8
0
2
0
3
2,8
5,6
5,6
2,8
0
4
G5
5
G3
6
E3
7
DC-
DC+
DC+
DC-
E1
8
0
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
0
0
0
2,8
5,6
22,2
22,2
19,2
16,4
10,2
11,5
16,4
19,2
22,2
22,2
22,2
22,2
19,2
16,4
0
G1
0
PH11
PH12
G2
7,15
7,75
7,75
8,35
11,15
13,75
13,75
13,15
19,65
25,65
33,4
31,55
31,55
E2
NTC1
NTC2
E4
G4
PH21
PH22
PH31
PH32
G6
E6
Copyright Vincotech
17
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Pinout
DC+
9
DC+
8
DC+
1
T2
T4
T6
D1
D3
D5
G2
15
G4
20
G6
25
E2
16
E4
19
E6
26
PH11
PH22
22
PH31
23
C1
C2
C3
13
PH12
14
PH21
21
PH32
24
T1
T3
T5
D2
D4
D6
G1
G3
G5
12
5
4
E1
11
E3
6
E5
3
DC-
10
DC-
DC-
7
2
NTC
NTC1
17
NTC2
18
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T2, T3, T4, T5, T6
MOSFET
1200 V
75 mΩ
10 A
Inverter Switch
Inverter Diode
D1, D2, D3, D4, D5,
FWD
1200 V
1000 V
D6
C1, C2, C3
NTC
Capacitor
Capacitor (DC)
Thermistor
Thermistor
Copyright Vincotech
18
31 Aug. 2022 / Revision 1
10-PZ126PA075ME-M909F38Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PZ126PA075ME-M909F38Y-D1-14
31 Aug. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
19
31 Aug. 2022 / Revision 1
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