20-1B06IPB004RC01-P952A45 [VINCOTECH]
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels;
| 型号： | 20-1B06IPB004RC01-P952A45 |
| 厂家： | 
VINCOTECH |
| 描述： | Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管 |
| 文件： | 总30页 (文件大小：911K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
flow IPM 1B
600 V / 4 A
Features
flow 1B housing
● Optimized for PFC frequencies of 20kHz..150kHz
and inverter frequencies of 4kHz..20kHz
● Input Rectifier, PFCꢀBoost with integrated
PFCꢀShunt, PFCꢀGate driver and DCꢀcapacitor
● 3 phase inverter with integrated DC Shunt, gate driver
circuit incl. bootstrap circuit and over current protection
● Sense output of DCꢀcurrent
solder pins
Pressꢀfit pins
● Conclusive Power Flow, all power connections on
one side, no input output Xꢀing
Schematic
Target Applications
● Low Power Industrial Drives
● Motor Integrated Fans and Pumps
● AirCon
● Electrical Tools
Types
● 20ꢀ1B06IPB004RC01ꢀP952A45
● 20ꢀPB06IPB004RC01ꢀP952A45Y
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
I FSM
1600
13
V
A
T j = T jmax
T s = 80 °C
T j = 45 °C
T s = 80 °C
Surge (nonꢀrepetitive) forward current
I2tꢀvalue
130
80
A
t p = 10 ms
50 Hz half sine wave
I 2
t
A2s
W
°C
P tot
T j = T jmax
Power dissipation
15
T jmax
Maximum Junction Temperature
150
PFC IGBT
V CE
I C
Collectorꢀemitter breakdown voltage
650
8
V
A
T j = T jmax
T s = 80 °C
DC collector current
I CRM
t p limited by T jmax
V CE ≤ 650V, T j ≤ T op max
T j = T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
45
A
45
A
P tot
V GE
T s = 80 °C
16
W
V
Gateꢀemitter peak voltage
±20
175
T jmax
Maximum Junction Temperature
°C
copyright Vincotech
1
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Inverse Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
650
6
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
12
A
10
W
°C
T jmax
Maximum Junction Temperature
175
PFC Diode
V RRM
I F
Peak Repetitive Reverse Voltage
650
9
V
A
T j = T jmax
t p=8,3ms
T s = 80 °C
DC forward current
I FSM
Surge (nonꢀrepetitive) forward current
I2tꢀvalue
100
40
A
60 Hz half sine wave
I 2
I FRM
P tot
t
A2s
A
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
30
T s = 80 °C
15
W
°C
T jmax
Maximum Junction Temperature
175
Inverter Transistor
V CE
I C
Collectorꢀemitter breakdown voltage
600
4
V
A
T j = T jmax
T s = 80 °C
DC collector current
I CRM
t p limited by T jmax
V CE ≤ 600V, T j ≤Tjmax
T j = T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
12
8
A
A
P tot
V GE
T s = 80 °C
12
±20
W
V
Gateꢀemitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
8
µs
V
400
T jmax
Maximum Junction Temperature
175
°C
Inverter Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
5
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
8
A
9
W
°C
T jmax
Maximum Junction Temperature
175
copyright Vincotech
2
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Shunt
DC forward current
Power dissipation
I F
T c = 25 °C
T c = 25 °C
10
9
A
P tot
W
PFC Driver*
Collectorꢀemitter voltage
V CEO
I C
I CM
I B
I BM
T jmax
45
500
1000
100
200
150
V
Collector current
Peak collector current
Base current
t P ≤ 10 ms
mA
Peak base current
mA
°C
Maximum Junction Temperature
* for more information see infineon's datasheet BC817
DC - Shunt
I F
T c = 25 °C
T c = 25 °C
DC forward current
8
A
P tot
Power dissipation
3,2
W
DC link Capacitor
V MAX
T c = 25 °C
Max.DC voltage
500
V
Gate Driver*
V CC
U IN
V CC common with PFC driver
Supply voltage
20
10
V
V
V
Input voltage (LIN, HIN, EN)
Output voltage (FAULT)
U OUT
V CC + 0.5
* for more information see infineon's datasheet 6ED003L02ꢀF2
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
°C
°C
ꢀ40…+(T jmax ꢀ 25)
Operation temperature under switching condition
Isolation Properties
Isolation voltage
V is
t
= 2 s
DC Test Voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
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20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V CE [V] I F [A]
V DS [V] I D [A]
V GE [V]
V GS [V]
T j [°C]
Min
Max
Input Rectifier Diode
25
1,04
0,97
0,87
0,74
25
V F
V to
r t
Forward voltage *
7
V
V
125
25
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
7
125
25
7
mꢁ
mA
125
33
I r
1200
25
0,01
phaseꢀchange
material
R th(j-s)
Thermal resistance junction to sink
4,56
K/W
λ = 3,4 W/mK
* chip data
PFC IGBT
V GE(th)
V CEsat
I CES
t r
V GE=V CE
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage*
Collectorꢀemitter cutꢀoff
Rise time
0,0004
25
3,3
4
4,7
V
V
25
1,43
1,55
2,05
15
0
6
150
650
25
0,04
mA
25
2
2
125
25
107
161
4
t d(off)
t f
Turnꢀoff delay time **
Fall time
ns
mWs
pF
125
25
U
CC = 15 V
400
4
V IN = 5 V
125
25
2
0,055
0,091
0,020
0,038
E on
E off
C ies
C oss
C rss
Q G
Turnꢀon energy loss
Turnꢀoff energy loss
Input capacitance
125
25
125
930
24
4
Output capacitance
Reverse transfer capacitance
Gate charge
f
= 1 MHz
0
25
25
25
±15
520
15
38
nC
phaseꢀchange
material
R th(j-s)
K/W
Thermal resistance junction to sink
5,80
λ = 3,4 W/mK
* chip data
PFC Inverse Diode
25
1,23
1,73
1,59
2,15
V F
Diode forward voltage
6
V
125
phaseꢀchange
material
R th(j-s)
K/W
Thermal resistance junction to sink
9,56
λ = 3,4 W/mK
PFC Diode
25
1,51
1,42
11
2,13
V F
I RRM
Forward voltage *
6
4
V
A
150
25
Peak recovery current
125
25
13
18
t rr
Reverse recovery time
ns
125
25
28
U CC = 15 V
V IN = 5 V
0,12
0,24
0,013
0,033
959
452
Q rr
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
400
µC
125
25
E rec
mWs
A/µs
125
25
( di rf/dt )max
125
phaseꢀchange
material
R th(j-s)
Thermal resistance junction to sink
7,19
K/W
λ = 3,4 W/mK
* chip data
PFC Shunt
R1 value
R
100
mꢁ
copyright Vincotech
4
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V CE [V] I F [A]
V DS [V] I D [A]
V GE [V]
V GS [V]
T j [°C]
Min
Max
Inverter Transistor
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage*
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time **
Rise time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,000075
25
4,4
1,7
5
5,6
2,8
V
V
25
2,20
2,29
15
0
4
150
600
0
25
25
0,1
mA
nA
ꢁ
20
120
none
25
586
635
21
125
25
125
25
30
ns
666
749
20
t d(off)
t f
Turnꢀoff delay time **
Fall time
U
CC = 15 V
125
25
400
4
V IN = 5 V
125
25
50
0,117
0,198
0,072
0,115
E on
Turnꢀon energy loss
125
25
mWs
E off
Turnꢀoff energy loss
125
C ies
Input capacitance
305
18
9
C oss
C rss
Output capacitance
f
= 1 MHz
0
25
25
pF
Reverse transfer capacitance
phaseꢀchange
material
R th(j-s)
Thermal resistance junction to sink
8,93
K/W
λ = 3,4 W/mK
* chip data
** including gate driver
Inverter Diode
25
1,5
2,08
1,92
2
2,6
V F
I RRM
Diode forward voltage *
4
4
V
A
150
25
Peak reverse recovery current
Reverse recovery time
125
25
3
166
254
0,18
0,35
25
t rr
ns
125
25
U CC = 15 V
V IN = 5 V
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
400
nC
125
25
( di rf/dt )max
E rec
A/µs
mWs
125
25
16
0,045
0,085
125
phaseꢀchange
material
λ = 3,4 W/mK
R th(j-s)
Thermal resistance junction to sink
* chip data
10,05
K/W
DC - Shunt
R2 value
R
25
50
mꢁ
nF
DC link Capacitor
C value
C
100
copyright Vincotech
5
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V CE [V] I F [A]
V DS [V] I D [A]
V GE [V]
V GS [V]
T j [°C]
Min
Max
Gate Driver
25
125
V CC
I QCC
Supply voltage
13
15
17,5
2
V
25
125
VLIN=0V; VHIN=3,3V
Quiescent Vcc supply current
Input voltage (LIN, HIN, EN)
Input voltage (GATE)
1,3
mA
25
125
V IN
0
5
25
125
V GATE
0
15
25
125
V IH
Logic "0" input voltage (LIN, HIN)
Logic "1" input voltage (LIN, HIN)
Positive going threshold voltage (EN)
Negative going threshold voltage (EN)
Input clamp voltage (LIN, HIN, EN)
ITRIP positive going threshold
Input bias current LIN high
Input bias current LIN low
1,7
0,7
2,1
0,9
2,1
1,3
10,3
445
70
2,4
1,1
2,3
1,5
12
V CC = 15V
25
125
V IL
V
25
125
V EN, TH+
V EN, TH-
V IN, CLAMP
V IT, TH+
I LIN+
I LIN-
1,9
1,1
25
125
25
125
IIN = 4mA
9
25
125
380
510
100
200
100
200
120
VCC
100
mV
25
125
VLIN = 3,3V
VLIN = 0V
25
125
10
25
125
I HIN+
ꢂA
Input bias current HIN high
Input bias current HIN low
VHIN = 3,3V
VHIN = 0V
VHIN = 3,3V
70
25
125
I HIN-
110
45
25
125
I EN+
Input bias current EN high
25
125
V FLT
R ON, FLT
t IN
Output voltage (FAULT)
0
1
V
ꢁ
25
125
V FAULT=0.5 V
Low on resistor of pull down trans. (FAULT)
Pulse width for ON or OFF
45,0
25
125
ꢂs
25
125
t ON
Turnꢀon propagation delay (LIN, HIN)
Turnꢀoff propagation delay (LIN, HIN)
FAULT reset time
VLIN/HIN = 0V or 3,3V
VLIN/HIN = 0V or 3,3V
400
360
530
490
4
800
760
ns
25
125
t OFF
25
125
t RST
ms
ns
25
125
t DT
Fixed deadtime between high and low side
VLIN/HIN = 0V & 3,3V
150
310
copyright Vincotech
6
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Thermistor
Symbol
Unit
V r [V] I C [A]
V CE [V] I F [A]
V DS [V] I D [A]
V GE [V]
V GS [V]
T j [°C]
Min
Max
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
Bꢀvalue
R
∆R/R
P
25
100
25
25
25
25
22000
ꢁ
%
ꢀ12
12
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B(25/100)
Bꢀvalue
K
Vincotech NTC Reference
B
PFC Driver
Rb
Base resistor
100,00
2,70
ꢁ
Rbpd
Base pull down resistor
Thermal Resistance Junction ꢀ heat sink
Kꢁ
RthJS
≤105
K/W
DC Characteristics
IC =100 mA, VCE =1 V
IC =300 mA, VCE =1 V
IC = 500 mA, IB = 50 mA
160
100
250
400
hFE
DC current gain
25
VCEsat
Collectorꢀemitter saturation voltage
Base emitter saturation voltage
0,7
1,2
V
VBEsat
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT
170
6
MHz
pF
f
= 1 Mhz, VBE = 10 V
25
Ccb
Ceb
Collectorꢀbase capacitance
Emitterꢀbase capacitance
VEB= 0,5 V, f = 1 MHz
60
copyright Vincotech
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20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
20
20
15
10
5
15
10
5
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
VCE (V)
VCE (V)
At
At
t p
T j
=
=
t p
T j
=
=
250
ꢂs
°C
250
ꢂs
°C
25
150
U CC from
U CC from
10 V to
17V in steps of 1V
10 V to
17V in steps of 1V
figure 3.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
20
15
10
5
Tj = Tjmax-25°C
Tj = 25°C
0
0
1
2
3
4
VF (V)
At
t p
=
250
ꢂs
copyright Vincotech
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20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
figure 4.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
0,4
0,3
0,2
0,1
0
EON
EON
EOFF
EOFF
0
1
2
3
4
5
I C (A)
6
With an inductive load at
T j
=
°C
V
25/125
400
V CE
U CC
=
=
15
V
figure 5.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
0,15
0,12
0,09
0,06
0,03
0,00
Tj = Tjmax -25°C
Tj = 25°C
0
1
2
3
4
5
6
I C (A)
With an inductive load at
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
figure 6.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
1,00
tdoff
tdon
0,10
tf
tr
0,01
0,00
0
1
2
3
4
5
6
I
C (A)
With an inductive load at
T j
=
125
400
15
°C
V
V CE
U CC
=
=
V
figure 7.
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
0,4
0,3
0,2
0,1
0,0
Tj = Tjmax -25°C
Tj = 25°C
0
1
2
3
4
5
6
I
C (A)
At
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
10
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
figure 8.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
0,6
0,5
Tj = Tjmax -25°C
0,4
0,3
0,2
0,1
0,0
Tj = 25°C
0
1
2
3
4
5
6
I C (A)
At
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
figure 9.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
3
2,5
2
Tj = Tjmax -25°C
Tj = 25°C
1,5
1
0,5
0
0
1
2
3
4
5
6
I
C (A)
At
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
figure 10.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
300
µ
µ
µ
µ
dI0/dt
dIrec/dt
250
200
150
100
50
0
0
1
2
3
4
5
6
I C (A)
At
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
figure 11.
IGBT
figure 12.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
10-1
10-2
100
D = 0,5
0,2
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,1
0,05
0,02
0,01
0,005
0,000
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p / T
10,24
D =
R th(j-s)
D =
R th(j-s) =
=
8,20
K/W
K/W
IGBT thermal model values
Tau (s)
FWD thermal model values
R (K/W)
2,49Eꢀ01
9,97Eꢀ01
R (K/W)
Tau (s)
6,92Eꢀ01
1,64E+00
1,59Eꢀ01
5,43Eꢀ01
3,81E+00 5,93Eꢀ02
2,56E+00 1,81Eꢀ02
1,83E+00 2,58Eꢀ03
1,50E+00 3,50Eꢀ04
4,55E+00 3,81Eꢀ02
1,65E+00 5,10Eꢀ03
6,64Eꢀ01
9,00Eꢀ02
7,96Eꢀ04
3,11Eꢀ04
copyright Vincotech
12
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
figure 13.
IGBT
figure 14.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
25
20
15
10
5
5
4
3
2
1
0
0
0
50
100
150
200
T s (
o C)
T s (
o C)
0
50
100
150
200
At
T j
At
T j
=
=
175
°C
175
15
°C
V
U CC
=
figure 15.
Power dissipation as a
FWD
figure 16.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
20
16
12
8
6
5
4
3
2
1
0
4
0
0
50
100
150
200
0
50
100
150
200
T s (
o C)
T s (
o C)
At
At
T j
=
T j
=
175
°C
175
°C
copyright Vincotech
13
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
figure 17.
IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
102
101
100
10-1
10-2
100
101
102
VCE (V)
103
At
T jmax
T j
≤
U CC
=
15
V
figure 18.
Reverse bias safe operating area
IGBT
I C = f(V CE
)
10
IC MAX
8
6
4
2
0
0
100
200
300
400
500
600
VCE (V)
700
At
T j
=
T jmaxꢀ25
ºC
copyright Vincotech
14
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
figure 1.
IGBT
figure 2.
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
50
50
40
30
20
10
40
30
20
10
0
0
0
0
1
2
3
4
1
2
3
4
VCE (V)
VCE (V)
At
At
t p
T j
=
=
t p
T j
=
=
250
25
ꢂs
°C
17V in steps of 1V
250
0
ꢂs
°C
17V in steps of 1V
U CC from
U CC from
7 V to
7 V to
figure 3.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
60
50
40
30
20
10
0
Tj = 25°C
Tj = Tjmax-25°C
0
1
2
3
4
VF (V)
At
t p
=
250
ꢂs
copyright Vincotech
15
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
figure 4.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
0,25
Eon
0,2
0,15
0,1
Eon
Eoff
Eoff
0,05
0
0
2
4
6
8
10
12
I C (A)
With an inductive load at
T j
=
25/125
400
°C
V CE
U CC
=
=
V
V
15
figure 5.
IGBT
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
0,08
0,06
Erec
Tj = Tjmax -25°C
0,04
0,02
0,00
Erec
Tj = 25°C
0
2
4
6
8
10
12
I C (A)
With an inductive load at
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
16
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
figure 6.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
1,00
0,10
0,01
0,00
tdoff
tdon
tf
tr
0
2
4
6
8
10
12
I
C (A)
With an inductive load at
T j
=
125
400
15
°C
V
V CE
U CC
=
=
V
figure 7.
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
0,05
0,04
0,03
0,02
0,01
0
trr
trr
0
2
4
6
8
10
I C (A)
12
At
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
17
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
figure 8.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
0,4
0,3
0,2
0,1
0,0
Qrr
Tj = Tjmax - 25°C
Qrr
Tj = 25°C
0
2
4
6
8
10
12
I
C (A)
At
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
figure 9.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
20
16
Tj = Tjmax - 25°C
IRRM
12
8
IRRM
Tj = 25°C
4
0
0
2
4
6
8
10
12
I C (A)
At
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
18
20 Jan. 2017 / Revision 3
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20-PB06IPB004RC01-P952A45Y
datasheet
PFC
figure 10.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
3000
dIrec/dt
dI0/dt
2500
2000
1500
1000
500
0
0
2
4
6
8
10
12
I C (A)
At
T j
=
25/125
400
°C
V
V CE
U CC
=
=
15
V
figure 11.
IGBT
figure 12.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,1
0,05
0,02
0,01
0,02
0,01
0,005
0,000
0,005
0,000
10-2
10-2
10-5
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p / T
7,19
D =
R th(j-s)
D =
R th(j-s) =
=
5,80
K/W
K/W
FWD thermal model values
IGBT thermal model values
Tau (s)
R (K/W)
8,85Eꢀ02
3,12Eꢀ01
R (K/W)
2,22Eꢀ01
6,61Eꢀ01
Tau (s)
4,38E+00
8,32Eꢀ01
2,69E+00
2,71Eꢀ01
1,99E+00 1,12Eꢀ01
2,31E+00 3,80Eꢀ02
4,47E+00 4,89Eꢀ02
1,43E+00 5,11Eꢀ03
8,99Eꢀ01
2,11Eꢀ01
4,25Eꢀ03
5,94Eꢀ04
4,13Eꢀ01
7,51Eꢀ04
copyright Vincotech
19
20 Jan. 2017 / Revision 3
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20-PB06IPB004RC01-P952A45Y
datasheet
PFC
figure 13.
IGBT
figure 14.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
40
30
20
10
0
10
8
6
4
2
0
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
T s
(
At
T j
At
T j
=
=
175
ºC
175
15
ºC
V
U CC
=
figure 15.
Power dissipation as a
FWD
figure 16.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
30
25
20
15
10
5
12
9
6
3
0
0
T h
(
o C)
0
50
100
150
T h
(
o C)
200
0
50
100
150
200
At
At
T j
=
T j
=
175
ºC
175
ºC
copyright Vincotech
20
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
figure 17.
IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
102
10uS
100uS
1mS
10mS
100mS
DC
101
100
10-1
102
100
101
103
VDS (V)
At
D =
single pulse
T s
=
80
15
ºC
V
U CC
=
T jmax
T j
=
figure 18.
Reverse bias safe operating area
IGBT
I C = f(V CE
)
35
30
25
20
15
10
5
IC MAX
0
0
100
200
300
400
500
600
700
VCE (V)
At
T j
=
T jmaxꢀ25
ºC
copyright Vincotech
21
20 Jan. 2017 / Revision 3
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20-PB06IPB004RC01-P952A45Y
datasheet
Input Rectifier Bridge
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
25
20
15
101
100
10-1
10-2
10
D = 0,5
0,2
Tj = Tjmax-25°C
0,1
0,05
0,02
0,01
0,005
0,000
5
Tj = 25°C
0
0,0
0,5
1,0
1,5
2,0
10-5
10-4
10-3
10-2
10-1
100
10110
t p (s)
VF (V)
At
At
t
p / T
t p
=
250
ꢂs
D =
R th(j-s)
=
4,56
K/W
figure 3.
Power dissipation as a
Rectifier Diode
figure 4.
Forward current as a
Rectifier Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
35
30
25
20
15
10
5
16
12
8
4
0
0
T s
(
o C)
T s (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
At
At
T j
=
T j
=
150
ºC
150
ºC
copyright Vincotech
22
20 Jan. 2017 / Revision 3
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datasheet
Shunt
figure 1.
PFC Shunt
figure 2.
DC Shunt
Pulse Power R1
Pulse Power R2
103
103
Single
Repetitive
Single
Repetitive
102
102
101
100
101
100
10ꢀ1
100
102
103
104
101
101
t pulse (ms)
t pulse (ms)
10ꢀ1
100
102
103
104
dR/R0 < 5% after 1 pulse
dR/R0 < 5% after 10.000 cycles; duty cycle< 0,1%
dR/R0 < 1% after 1 pulse
dR/R0 < 1% after 10.000 cycles; duty cycle< 0,1%
Thermistor
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
45
65
85
105
125
T (°C)
copyright Vincotech
23
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datasheet
Switching Definitions Output Inverter
General conditions
T j
=
125 °C
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
125
200
%
tdoff
IC
VCE
%
UIN
100
150
VCE 90%
UIN 90%
75
50
25
0
100
IC
VCE
UIN
tdon
tEoff
50
VCE 3%
UIN 10%
IC 10%
0
tEon
IC 1%
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
2,8
3
3,2
3,4
3,6
3,8
4
4,2
time(us)
time (us)
UIN (0%) =
0
5
400
V
UIN (0%) =
0
5
400
V
UIN (100%) =
V C (100%) =
I C (100%) =
V
V
UIN (100%) =
V C (100%) =
I C (100%) =
V
V
4
A
4
A
t doff
=
=
0,75
0,95
ꢂs
ꢂs
t don
=
=
0,64
0,82
ꢂs
ꢂs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
120
200
fitted
%
VCE
%
IC
100
150
IC 90%
80
VCE
100
60
IC
90%
IC
60%
tr
40
50
IC 40%
IC 10%
20
Ic
0
0
IC10%
tf
-50
-20
3,6
3,65
3,7
3,75
3,8
0,6
0,7
0,8
0,9
1
time (us)
time(us)
V C (100%) =
I C (100%) =
400
4
V
V C (100%) =
I C (100%) =
400
4
V
A
A
t f
=
0,05
ꢂs
t r
=
0,03
ꢂs
copyright Vincotech
24
20 Jan. 2017 / Revision 3
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datasheet
Switching Definitions Output Inverter
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
120
200
%
IC
1%
%
Poff
Eoff
Pon
100
150
100
50
80
60
40
Eon
20
VCE
3%
UIN 10%
UIN 90%
0
tEon
0
tEoff
-20
-50
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
2,8
3
3,2
3,4
3,6
3,8
4
4,2
time (us)
time(us)
P off (100%) =
E off (100%) =
1,61
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
1,61
kW
mJ
ꢂs
0,12
0,95
0,20
0,82
t E off
=
t E on =
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
120
Id
%
80
trr
40
0
fitted
IRRM 10%
Vd
-40
-80
-120
IRRM 90%
IRRM 100%
3,6
3,7
3,8
3,9
4
time(us)
V d (100%) =
I d (100%) =
400
V
4
A
I RRM (100%) =
t rr
ꢀ3
A
=
0,25
ꢂs
copyright Vincotech
25
20 Jan. 2017 / Revision 3
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20-PB06IPB004RC01-P952A45Y
datasheet
Switching Definitions Output Inverter
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of t Qrr
Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr
)
(t Erec= integrating time for E rec)
150
120
%
Erec
%
100
80
Id
Qrr
100
tErec
tQrr
50
60
40
0
-50
Prec
20
0
-100
-20
3,6
3,8
4
4,2
4,4
3,6
3,8
4
4,2
4,4
time(us)
time(us)
I d (100%) =
Q rr (100%) =
4
A
P rec (100%) =
E rec (100%) =
1,61
0,09
0,55
kW
mJ
ꢂs
0,35
0,55
ꢂC
ꢂs
t Q rr
=
t E rec =
copyright Vincotech
26
20 Jan. 2017 / Revision 3
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20-PB06IPB004RC01-P952A45Y
datasheet
Application data
Static logic funtion table
VCC
VBS
X
RCIN
ITRIP
ENABLE
X
FAULT
0
LO1,2,3 HO1,2,3
<VCCUV–
X
X
X
0
0
0
0
15V
<VBSUV–
3.3V
High imp /LIN1,2,3
15V
15V
15V
15V
15V
15V
15V
15V
<3.2V↓
X
0
3.3V
3.3V
3.3V
0
0
0
0
0
0
0
> VIT,TH+
> VRCIN,TH
> VRCIN,TH
0
0
High imp /LIN1,2,3 /HIN1,2,3
High imp
0
0
Pin Descriptions
Pin #
Pin Name
Pin Description
1
2
NTC2
NTC1
Temperature sensor connector 1
Temperature sensor connector 2
Inverter sense resistor highꢀside
Inverter sense resistor lowꢀside
Enable I/O functionality
3
InvS +
InvS ꢀ
EN
4
5
6
¬Fault
¬LIN3
¬LIN2
¬LIN1
¬HIN3
¬HIN2
Fault output, indicates over current or under voltage (negative
Signal input for lowꢀside W phase
7
8
Signal input for lowꢀside V phase
9
Signal input for lowꢀside U phase
10
11
Signal input for highꢀside W phase
Signal input for highꢀside V phase
12
13
¬HIN1
VCC
Signal input for highꢀside U phase
Driver circuit supply voltage
14
15
16
17
18
19
20
21
22
23
24
25
26
27
GND2
GND
Inverter ground
PFC ground
GATE
AC1
PFC gate driver input
Rectifier input
AC2
Rectifier input
DC1 + (coil)
PFC + (coil)
DC1 ꢀ
PFC ꢀ
DC2 ꢀ
DC2 +
W
Rectifier output DC +
PFC coil connector
Rectifier output DC ꢀ
PFC return
Inverter input DC ꢀ
Inverter input DC +
Output for W phase
Output for V phase
Output for U phase
V
U
copyright Vincotech
27
20 Jan. 2017 / Revision 3
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20-PB06IPB004RC01-P952A45Y
datasheet
Ordering Code & Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
without thermal paste, solder pins
with thermal paste, solder pins
without thermal paste, press fit pins
with thermal paste, press fit pins
20ꢀ1B06IPB004RC01ꢀP952A45
20ꢀ1B06IPB004RC01ꢀP952A45ꢀ/3/
20ꢀPB06IPB004RC01ꢀP952A45Y
20ꢀPB06IPB004RC01ꢀP952A45Yꢀ/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NNꢀNNNNNNNNNNNNNNꢀTTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
45
Y
0
Function
NTC2
NTC1
Inv_S+
Inv_Sꢀ
EN
2
42
0
3
39
0
4
36
0
5
33
0
6
30
0
FAULT
LIN3
LIN2
LIN1
HIN3
HIN2
HIN1
VCC
7
27
0
8
24
0
9
21
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
18
0
15
0
12
0
9
0
6
0
GND2
GND
GATE
AC1
3
0
0
0
ꢀ0,2
4,8
9,8
14,8
19,8
22,5
25,2
30,2
35,2
40,2
45,2
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
AC2
DC1+
PFC+
DC1ꢀ
PFCꢀ
DC2ꢀ
DC2+
W
V
U
copyright Vincotech
28
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Ordering Code & Marking - Outline - Pinout
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1,T2,T3,T4,T5,T6
IGBT
FWD
600 V
600 V
650 V
650 V
650 V
4 A
4 A
Inverter Transistor
Inverter Diode
PFC IGBT
D1,D2,D3,D4,D5,D6
T7
IGBT
15 A
15 A
6 A
D12
FWD
PFC Diode
D11
FWD
PFC inverse Diode
PFC Shunt
R3
Resistor
Rectifier
Resistor
Capacitor
Thermistor
D7,D8,D9,D10
1600 V
500 V
12 A
Input Rectifier Diode
DC Shunt
R2
C1
T
DC link Capacitor
Thermistor
copyright Vincotech
29
20 Jan. 2017 / Revision 3
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
100
Handling instruction
Handling instructions for flow 1B packages see vincotech.com website.
Package data
Package data for flow 1B packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
1ꢀ2, 4ꢀ5,
12, 19, 22
20ꢀxB06IPB010RC01ꢀP952A45xꢀD3ꢀ14
20 Jan. 2017
Rth values and conditions values changed
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
30
20 Jan. 2017 / Revision 3
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