30-FT12NMA200SH01-M660F18 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 30-FT12NMA200SH01-M660F18 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总30页 (文件大小：4842K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
flow MNPC 2
1200 V / 200 A
Features
flow 2 13 mm housing
● Three-level MNPC topology
● Reactive power capability
● High speed IGBTs
● Low inductive layout
Solder pin
press-fit pin
Schematic
Target applications
● Industrial Drives
● Solar Inverters
● UPS
Types
● 30-FT12NMA200SH01-M660F18
● 30-PT12NMA200SH01-M660F18Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
Collector-emitter voltage
1200
171
600
434
±20
10
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
700
87
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
109
150
W
°C
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
15
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
30
A
Tj = Tjmax
52
W
°C
Tjmax
Maximum junction temperature
150
Boost Switch
VCES
IC
Collector-emitter voltage
650
125
450
198
±20
6
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
IF
Peak repetitive reverse voltage
1200
84
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
50 Hz Single Half Sine Wave
tp = 10 ms
IFSM
Ptot
Tjmax
540
186
175
A
Tj = Tjmax
W
°C
Maximum junction temperature
Copyright Vincotech
2
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
50
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
100
82
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0068 25
5,3
2
5,8
6,3
V
V
25
200
2,17
2,58
2,42
15
0
125
1200
0
25
25
24
µA
nA
Ω
20
480
1
Cies
11080
640
f = 1 Mhz
0
25
25
25
pF
Cres
Qg
Reverse transfer capacitance
Gate charge
±15
600
200
1,52
C
Thermal
λpaste = 1 W/mK
(P12)
Rth(j-s)
Thermal resistance junction to sink
0,22
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
124
126
27
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
32
Rgon = 2 Ω
Rgoff = 2 Ω
ns
190
234
41
61
2,38
4,20
Turn-off delay time
Fall time
±15
350
200
Qr
Qr
= 4,5 μC
= 11 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
5,02
7,97
Copyright Vincotech
4
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
150
1,4
1,79
1,61
3,3
50
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
700
25
µA
λpaste = 1 W/mK
(P12)
Rth(j-s)
Thermal resistance junction to sink
0,64
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
130
169
93
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
A
trr
Qr
ns
118
di/dt = 7630 A/μs
di/dt = 6381 A/μs
4,47
11,00
0,905
2,39
5241
1766
±15
350
200
μC
Reverse recovered energy
Peak rate of fall of recovery current
Erec
mWs
A/µs
(dirf/dt)max
Buck Sw. Protection Diode
Static
25
125
1,6
2,13
1,74
2,6
27
VF
IR
Forward voltage
Reverse leakage current
Thermal
15
V
1200
25
µA
λpaste = 1 W/mK
(P12)
Rth(j-s)
Thermal resistance junction to sink
1,35
K/W
Copyright Vincotech
5
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0024 25
5
5,8
6,5
V
V
25
150
1,05
1,57
1,68
1,85
15
0
125
650
0
25
25
7,6
µA
nA
Ω
20
1200
none
9240
376
Cies
Coes
Cres
Qg
f = 1 Mhz
Output capacitance
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
274
15
480
150
940
nC
Thermal
λpaste = 1 W/mK
(P12)
Rth(j-s)
Thermal resistance junction to sink
0,48
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
123
114
21
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
21
Rgon = 2 Ω
Rgoff = 2 Ω
ns
168
177
38
Turn-off delay time
Fall time
±15
350
150
59
1,19
1,72
3,59
5,13
Qr
Qr
= 6,6 μC
= 12,9 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
6
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
100
1,5
2,23
2,34
2,54
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
25
120
17600
1200
150
µA
λpaste = 1 W/mK
(P12)
Rth(j-s)
Thermal resistance junction to sink
0,51
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
184
216
48
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
A
trr
Qr
ns
114
di/dt = 9114 A/μs
di/dt = 8387 A/μs
6,619
12,94
1,62
3,42
11659
9489
±15
350
150
μC
Reverse recovered energy
Peak rate of fall of recovery current
Erec
mWs
A/µs
(dirf/dt)max
Boost Sw. Protection Diode
Static
25
125
1,20
1,78
1,70
1,90
0,6
VF
IR
Forward voltage
Reverse leakage current
Thermal
50
V
650
25
µA
λpaste = 1 W/mK
(P12)
Rth(j-s)
Thermal resistance junction to sink
1,16
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
3950
3998
B-value
K
Vincotech NTC Reference
B
Copyright Vincotech
7
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
600
600
VGE
:
7
V
V
V
I
I
8
9
500
500
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
400
300
200
100
0
400
300
200
100
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
tp
Tj
=
=
250
125
μs
°C
Tj:
VGE
=
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
200
I
Z
10-1
150
10-2
10-3
10-4
100
50
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
100
10
μs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
=
0,22
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,22E-02
4,51E-02
4,08E-02
6,82E-02
1,62E-02
6,17E-03
3,98E+00
9,40E-01
2,28E-01
5,37E-02
1,58E-02
2,79E-03
Copyright Vincotech
8
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
9
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-3
10-4
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
Tj:
R th(j-s)
0,64
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,64E-02
1,07E-01
1,60E-01
2,26E-01
3,16E-02
3,18E-02
4,57E+00
1,16E+00
1,83E-01
3,83E-02
5,84E-03
7,41E-04
Copyright Vincotech
10
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
1,35
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
6,28E-02
1,37E-01
2,22E-01
6,61E-01
1,45E-01
1,19E-01
4,29E+00
7,41E-01
1,16E-01
2,97E-02
5,97E-03
5,93E-04
Copyright Vincotech
11
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
450
450
375
300
225
150
75
VGE
:
7 V
I
I
8 V
375
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
225
150
75
0
0
0
1
2
3
4
5
0
1
2
3
4
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
tp
Tj
=
=
250
125
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
150
I
120
Z
10-1
90
60
30
10-2
10-3
10-4
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
10
12
VGE (V)
tp
=
100
10
μs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
=
0,48
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
8,90E-02
1,10E-01
1,05E-01
1,51E-01
2,43E-02
4,40E+00
7,62E-01
1,32E-01
3,41E-02
5,47E-03
Copyright Vincotech
12
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80 ºC
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
13
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-3
10-4
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
Tj:
R th(j-s)
0,51
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,62E-02
8,02E-02
1,97E-01
1,39E-01
3,83E-02
3,05E+00
4,55E-01
8,90E-02
2,65E-02
3,64E-03
Copyright Vincotech
14
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,16
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,64E-02
1,01E-01
2,54E-01
5,53E-01
9,80E-02
9,63E-02
5,13E+00
6,20E-01
8,75E-02
2,26E-02
3,72E-03
4,43E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
15
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
350
±15
2
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
350
±15
200
V
V
A
125 °C
125 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
E rec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
±15
2
V
V
Ω
VCE
VGE
I C
=
=
=
350
±15
200
V
V
A
125 °C
125 °C
R gon
Copyright Vincotech
16
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
125
350
±15
2
°C
V
Tj =
125
350
±15
200
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
25 °C
Tj:
Tj:
±15
2
±15
200
VGE
R gon
=
=
VGE
I C
=
125 °C
125 °C
=
Copyright Vincotech
17
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
±15
2
V
V
Ω
350
±15
200
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
Tj:
Tj:
=
=
125 °C
125 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
±15
2
V
V
Ω
350
±15
200
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
Tj:
Tj:
VGE
=
=
=
125 °C
125 °C
R gon
=
Copyright Vincotech
18
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
d
iF/dt
d
iF/
dt
t
i
t
i
dirr/dt
dirr
/
dt
350
At
VCE
=
V
V
Ω
25 °C
125 °C
At
VCE
VGE
I C
=
350
±15
200
V
V
A
25 °C
125 °C
±15
2
:
Tj
:
Tj
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj
=
=
=
175
°C
Ω
2
2
R gon
R goff
Ω
Copyright Vincotech
19
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
2 Ω
T j
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
200
234
V
350
200
126
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
200
61
V
350
200
32
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
ns
tr
=
ns
Copyright Vincotech
20
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
200
169
118
V
I F (100%) =
Q r (100%) =
200
A
A
11,00
μC
A
ns
t rr
=
Copyright Vincotech
21
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
350
±15
2
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
350
±15
150
V
V
A
125 °C
125 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
E rec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
±15
2
V
V
Ω
VCE
VGE
I C
=
=
=
350
±15
150
V
V
A
125 °C
125 °C
R gon
Copyright Vincotech
22
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
125
350
±15
2
°C
V
Tj =
125
350
±15
150
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
25 °C
Tj:
Tj:
±15
2
±15
150
VGE
R gon
=
=
VGE
I C
=
125 °C
125 °C
=
Copyright Vincotech
23
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
±15
2
V
V
Ω
350
±15
150
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
Tj:
Tj:
=
=
125 °C
125 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
±15
2
V
V
Ω
350
±15
150
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
Tj:
Tj:
VGE
=
=
=
125 °C
125 °C
R gon
=
Copyright Vincotech
24
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
d
iF/dt
d
iF/
dt
t
i
t
i
dirr/dt
dirr
/
dt
350
At
VCE
=
V
V
Ω
25 °C
125 °C
At
VCE
VGE
I C
=
350
±15
150
V
V
A
25 °C
125 °C
±15
2
:
Tj
:
Tj
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj
=
=
=
175
2
°C
Ω
Ω
R gon
R goff
2
Copyright Vincotech
25
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
2 Ω
T j
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
150
177
V
350
150
114
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
150
59
V
350
150
21
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
ns
tr
=
ns
Copyright Vincotech
26
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
150
216
114
V
I F (100%) =
Q r (100%) =
150
A
A
12,94
μC
A
ns
t rr
=
Copyright Vincotech
27
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Ordering Code & Marking
Version
without thermal paste 13 mm housing with solder pins
with thermal paste 13 mm housing with solder pins
without thermal paste 13 mm housing with press-fit pins
with thermal paste 13 mm housing with press-fit pins
Ordering Code
30-FT12NMA200SH01-M660F18
30-FT12NMA200SH01-M660F18-/3/
30-PT12NMA200SH01-M660F18Y
30-PT12NMA200SH01-M660F18Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin table
Y
Pin
X
Y
3
0
0
0
0
0
3
0
3
0
Pin
X
Function
C1
Function
K1
70
1
2
52
53
54
55
56
52
18,1
70
C1
C1
C1
C1
C1
N1
N1
N1
N1
64,2
70,6
70
36,6
36,55
18,9
NTC1
NTC2
S1
3
4
67,5
65
5
62,5
60
68,55
15,9
G1
6
7
52,75
52,75
50,25
50,25
8
9
10
11
12
13
43
43
40,5
3
0
3
E1
E1
E1
14
15
16
17
18
19
20
21
22
40,5
38
0
3
0
3
0
3
0
3
0
E1
E1
E1
E2
E2
E2
E2
E2
E2
38
32
32
29,5
29,5
27
27
23
24
25
26
27
28
29
30
31
32
33
34
35
19,75
17,25
14,75
12,25
5
0
N2
N2
N2
N2
C2
C2
C2
C2
C2
C2
G4
S4
K2
0
0
0
3
5
0
3
2,5
2,5
0
0
3
0
0
5,75
5,75
12,1
19,45
22,45
22,7
Copyright Vincotech
28
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
1200 V
700 V
Current
Function
Buck Switch
Buck Diode
Comment
Q1, Q2
D3, D4
200 A
150 A
15 A
FWD
DQ1 , DQ2
Q3, Q4
D1, D2
DQ3, DQ4
R1
FWD
IGBT
FWD
FWD
NTC
1200 V
650 V
Buck Sw. Protection Diode
Boost Switch
150 A
100 A
50 A
1200 V
650 V
Boost Diode
Boost Sw. Protection Diode
Thermistor
Copyright Vincotech
29
19 Mar. 2019 / Revision 3
30-FT12NMA200SH01-M660F18
30-PT12NMA200SH01-M660F18Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Correction of Ic/If values
30-xT12NMA200SH01-M660F18x-D3-14
19 Mar. 2019
2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
19 Mar. 2019 / Revision 3
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