30-P2126PA050SC-L287F09Y [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | 30-P2126PA050SC-L287F09Y |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总17页 (文件大小:3217K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
30-P2126PA050SC-L287F09Y
datasheet
1200 V / 50 A
flow PACK 2
Features
flow 2 17 mm housing
● IGBT4 (1200 V) technology for low saturation losses and
improved EMC behavior
● Compact and low inductive design
● Integrated temperature sensor
Schematic
Target applications
● Industrial drives
Types
● 30-P2126PA050SC-L287F09Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
Collector-emitter voltage
1200
65
V
A
VCES
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
150
185
±20
A
ICRM
Ptot
VGES
tp limited by Tjmax
Tj = Tjmax
W
V
10
µs
V
tSC
Tj ≤ 150 °C
VGE = 15 V
Short circuit ratings
800
VCC
Maximum Junction Temperature
175
°C
Tjmax
1
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
1200
65
V
A
VRRM
IF
IFRM
Ptot
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80°C
Ts = 80°C
100
127
175
A
W
°C
Tj = Tjmax
Maximum Junction Temperature
Tjmax
Module Properties
Thermal Properties
Storage temperature
-40…+125
°C
°C
Tstg
Tjop
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
4000
2500
V
tp = 2 s
Isolation voltage
Visol
V
tp = 1 min
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
2
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
Min
Max
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Inverter Switch
Static
25
0,0017
5,3
5,8
6,3
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
V
V
VGE(th)
VCEsat
ICES
VGE = VCE
125
25
1,58
1,88
2,30
2,07
15
0
50
150
1200
0
25
25
1
µA
nA
Ω
20
120
IGES
rg
4
2800
100
Cies
0
25
25
pF
f = 1 MHz
Reverse transfer capacitance
Thermal
Cres
phase-change
material
λ = 3,4 W/mK
Thermal resistance junction to sink
0,51
K/W
Rth(j-s)
IGBT Switching
Turn-on delay time
Rise time
25
150
25
150
25
150
25
150
25
150
25
150
96
101
17
24
214
281
87
122
2,701
4,211
2,744
4,531
td(on)
tr
td(off)
tf
Rgoff = 8 Ω
Rgon = 8 Ω
ns
Turn-off delay time
Fall time
±15
600
50
Qr
Qr
= 4,8 μC
= 9,7 μC
FWD
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
Eoff
FWD
mWs
3
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
Min
Max
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Inverter Diode
Static
25
1,73
1,70
1,68
2,05
10
Forward voltage
50
125
150
V
VF
Ir
Reverse leakage current
1200
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Thermal resistance junction to sink
0,75
K/W
Rth(j-s)
FWD Switching
25
150
25
81
85
Peak recovery current
Reverse recovery time
Recovered charge
A
IRRM
139
316
ns
trr
Qr
150
di/dt = 3866 A/μs
di/dt = 2820 A/μs
25
150
25
150
25
150
4,797
9,708
1,790
3,972
4803
1209
±15
600
50
μC
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
Erec
(dirf/dt)max
Thermistor
Rated resistance
25
100
25
25
25
25
22
kΩ
%
R
ΔR/R
P
-12
+14
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
200
2
mW
mW/K
K
Tol. ±3%
Tol. ±3%
3950
3998
B(25/50)
B-value
K
B(25/100)
Vincotech NTC Reference
B
4
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
I
I
tp
=
250
15
μs
25 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,51
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,12E-02
1,15E-01
2,22E-01
6,59E-02
3,86E-02
1,13E+00
1,65E-01
3,78E-02
1,21E-02
9,52E-04
5
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switch Characteristics
Safe operating area
IGBT
I C = f(VCE
)
I
At
single pulse
80
D =
Ts
VGE
Tj
=
ºC
=
±15
Tjmax
V
=
6
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Diode Characteristics
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
FWD
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,75
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,26E-02
6,76E-02
2,53E-01
3,23E-01
6,24E-02
3,64E+00
6,18E-01
8,65E-02
2,11E-02
3,47E-03
Thermistor Characteristics
figure 1.
Typical NTC characteristic
Thermistor
Typical Thermistor resistance values
as a function of temperature
R = f(T)
7
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Definitions
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
8
V
V
Ω
Ω
T j:
VCE
VGE
I C
=
=
=
600
±15
50
V
V
A
T j:
R gon
R goff
8
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(rg )
E
E
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
600
±15
8
V
V
Ω
T j:
VCE
VGE
I C
=
=
=
600
±15
50
V
V
A
T j:
R gon
8
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(r g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
8
°C
V
Tj =
150
600
±15
50
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
V
Ω
25 °C
150 °C
At
VCE
=
600
V
V
A
25 °C
150 °C
VGE
=
=
±15
Tj:
VGE
I C
=
±15
Tj:
R gon
8
=
50
9
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Definitions
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
±15
8
V
V
Ω
25 °C
150 °C
At
VCE
VGE
I C
=
600
±15
50
V
V
A
25 °C
150 °C
=
T j:
=
T j:
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
±15
8
V
V
Ω
25 °C
150 °C
At
VCE
VGE
I C
=
600
±15
50
V
V
A
25 °C
150 °C
VGE
R gon
=
=
T j:
=
T j:
=
10
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Definitions
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
diF/dt
t
t
dirr/dt
i
dir r/dt
i
600
At
VCE
=
V
V
Ω
25 °C
150 °C
At
VCE
VGE
I C
=
600
±15
50
V
V
A
25 °C
150 °C
VGE
=
=
±15
T j:
=
T j:
R gon
8
=
Figure 15.
IGBT
Reverse bias safe operating area
IC = f(V CE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon =
R goff =
8
8
Ω
11
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Characteristics
General conditions
T j
R gon
=
=
=
150 °C
8 Ω
8 Ω
R goff
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VCE
IC
VGE
VCE
VGE
tEoff
tEon
-15
-15
VGE (0%) =
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
50
V
600
50
V
A
A
tdoff
tEoff
=
=
0,281
0,710
μs
μs
tdon
tEon
=
=
0,101
0,345
μs
μs
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
IC
VCE
tr
tf
VC (100%) =
I C (100%) =
tf =
600
V
VC (100%) =
I C (100%) =
600
50
V
50
A
A
0,122
μs
tr
=
0,024
μs
12
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Poff
Eoff
Eon
tEon
tEoff
P off (100%) =
Eoff (100%) =
30,10
4,53
0,71
kW
mJ
μs
P on (100%) =
Eon (100%) =
30,10
4,21
kW
mJ
μs
tEoff
=
tEon
=
0,345
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
Vd (100%) =
I d (100%) =
I RRM (100%) =
600
V
50
A
-85
A
trr
=
0,316
μs
13
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Characteristics
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Id
Qrr
Erec
tErec
Prec
I d (100%) =
50
A
P rec (100%) =
Erec (100%) =
30,10
3,97
0,63
kW
Q rr (100%) =
9,71
0,63
μC
μs
mJ
tQrr
=
tErec
=
μs
14
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 17 mm housing
30-P2126PA050SC-L287F09Y
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
S11
0,9
2
0,9
3
G11
3
3,9
0
DC-1
DC-1
DC-1
DC-1
DC+1
DC+1
DC+1
DC+1
4
3,9
2,7
5,4
0
5
3,9
6
6,6
7
15,2
15,2
17,9
17,9
0
8
2,7
0
9
10
2,7
11
12
13
26,2
26,2
29,2
0
3
0
S13
G13
DC-2
14
15
16
17
18
19
20
21
22
29,2
29,2
31,9
32,2
40,5
40,5
43,2
43,2
51,5
2,7
5,4
0
DC-2
DC-2
DC-2
NTC
4,05
0
DC+2
DC+2
DC+2
DC+2
S15
2,7
0
2,7
0
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
51,5
54,5
54,5
54,5
57,2
65,8
65,8
68,5
68,5
64,7
61,7
58,7
56
3
G15
DC-3
DC-3
DC-3
DC-3
DC+3
DC+3
DC+3
DC+3
G16
0
2,7
5,4
0
0
2,7
0
2,7
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
S16
PH3
PH3
53,3
50,6
39,4
36,4
33,4
30,7
28
PH3
PH3
G14
S14
PH2
PH2
PH2
25,3
14,1
11,1
8,1
PH2
G12
S12
PH1
5,4
PH1
2,7
0
PH1
PH1
15
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12 , T13 ,
T14 , T15 , T16
IGBT
1200 V
50 A
50 A
Inverter Switch
D11 , D12 , D13 ,
D14 , D15 , D16
FWD
1200 V
Inverter Diode
Thermistor
NTC
Thermistor
16
Copyright Vincotech
02 Sep 2020 / Revision 4
30-P2126PA050SC-L287F09Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-x2126PA050SC-L287F09x-D3-14
31 May. 2017
New package quantity
All
30-x2126PA050SC-L287F09x-D4-14
02 Sep. 2020
Frame modification
1, 15
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
17
Copyright Vincotech
02 Sep 2020 / Revision 4
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High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
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