30-PT07NIB300S502-LE06F58Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 30-PT07NIB300S502-LE06F58Y |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总32页 (文件大小：8752K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-PT07NIB300S502-LE06F58Y
datasheet
flowNPC 2
650 V / 300 A
Topology features
flow 2 13 mm housing
● Kelvin Emitter for improved switching performance
● Temperature sensor
● Neutral Point Clamped Topology (I-Type)
Component features
● High speed and smooth switching
● Low gate charge
● Very low collector emitter saturation voltage
Housing features
● Base isolation: Al2O3
● Convex shaped baseplate for superior thermal contact
● Cu baseplate
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● UPS
Types
● 30-PT07NIB300S502-LE06F58Y
Copyright Vincotech
1
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
650
260
900
389
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
650
214
600
273
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
36
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
59
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
650
260
900
389
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1300
157
600
405
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
36
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
59
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
3
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
300
25
3,2
4
4,8
V
V
25
1,43
1,52
1,55
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
400
µA
nA
Ω
20
None
18000
520
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
68
VCC = 520 V
15
300
656
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,24
K/W
Rth(j-s)
25
117
116
116
16
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
18
17
Rgon = 2 Ω
Rgoff = 2 Ω
130
148
153
14,3
20,72
23,75
2,72
3,17
5,61
1,88
3,47
4,01
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
252
tf
125
150
25
ns
QrFWD=7,34 µC
QrFWD=14,87 µC
QrFWD=17,59 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
5
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,53
1,49
1,46
1,92(1)
15,2
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,35
K/W
Rth(j-s)
25
210,7
298,46
327,6
55,83
77,14
86,27
7,34
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=12198 A/µs
Qr
Recovered charge
di/dt=11950 A/µs ±15
di/dt=11550 A/µs
350
252
125
150
25
14,87
17,59
1,52
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
3,49
mWs
A/µs
3,95
6515
6781
5496
(dirf/dt)max
125
150
Copyright Vincotech
6
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Buck Sw. Protection Diode
Static
25
1,23
1,7
1,87(1)
0,36
VF
IR
Forward voltage
30
V
125
1,59
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
1,61
K/W
Rth(j-s)
Copyright Vincotech
7
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
300
25
3,2
4
4,8
V
V
25
1,43
1,52
1,55
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
400
µA
nA
Ω
20
None
18000
520
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
68
VCC = 520 V
15
300
656
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,24
K/W
Rth(j-s)
25
86
88
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
89
18
tr
125
150
25
19
19
Rgon = 2 Ω
Rgoff = 2 Ω
131
152
158
17,13
25,19
28,39
2,49
3,48
4,09
2,2
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
252
tf
125
150
25
ns
QrFWD=7,03 µC
QrFWD=14,75 µC
QrFWD=17,77 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
3,81
4,34
Copyright Vincotech
8
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
3,52
3,43
3,37
3,84(1)
15,2
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 1300 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,23
K/W
Rth(j-s)
25
159,24
240,8
260,38
99,61
126,09
146,08
7,03
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=13215 A/µs
Qr
Recovered charge
di/dt=12406 A/µs ±15
di/dt=12301 A/µs
350
252
125
150
25
14,75
17,77
1,91
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
3,98
mWs
A/µs
4,84
7071
(dirf/dt)max
125
150
4239
4684
Copyright Vincotech
9
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,23
1,7
1,87(1)
0,36
VF
IR
Forward voltage
30
V
125
1,59
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
1,61
K/W
Rth(j-s)
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
800
800
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
600
400
200
0
600
400
200
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
300
10
250
200
150
100
50
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,244
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,19E-02
3,56E-02
5,47E-02
9,39E-02
2,10E-02
7,41E-03
4,04E+00
8,39E-01
1,56E-01
3,22E-02
7,54E-03
1,20E-03
Copyright Vincotech
11
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,348
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,86E-02
5,04E-02
7,36E-02
1,26E-01
4,07E-02
1,25E-02
1,67E-02
5,43E+00
9,81E-01
1,80E-01
4,67E-02
1,41E-02
2,87E-03
3,56E-04
Copyright Vincotech
13
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Buck Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,614
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,05E-01
1,86E-01
8,60E-01
3,40E-01
1,24E-01
3,05E+00
2,04E-01
3,00E-02
8,15E-03
1,07E-03
Copyright Vincotech
14
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Boost Switch Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
800
800
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
600
400
200
0
600
400
200
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 12.
IGBT
figure 13.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
300
10
250
200
150
100
50
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,244
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,19E-02
3,56E-02
5,47E-02
9,39E-02
2,10E-02
7,41E-03
4,04E+00
8,39E-01
1,56E-01
3,22E-02
7,54E-03
1,20E-03
Copyright Vincotech
15
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Boost Switch Characteristics
figure 14.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
16
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
7
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,234
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,58E-02
3,62E-02
4,50E-02
8,39E-02
2,61E-02
8,14E-03
9,33E-03
5,76E+00
1,33E+00
2,11E-01
4,97E-02
1,56E-02
2,89E-03
3,52E-04
Copyright Vincotech
17
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Boost Sw. Protection Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,614
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,05E-01
1,86E-01
8,60E-01
3,40E-01
1,24E-01
3,05E+00
2,04E-01
3,00E-02
8,15E-03
1,07E-03
Copyright Vincotech
18
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Thermistor Characteristics
figure 19.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
19
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Buck Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
20,0
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
5,0
Eoff
Eoff
Eoff
2,5
0,0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
Ω
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
2
figure 22.
FWD
figure 23.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
6
5
4
3
2
1
0
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Buck Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
-1
10
-1
10
tf
tr
tr
tf
-2
10
-3
10
-2
10
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
2
°C
150
350
±15
252
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
2
figure 26.
FWD
figure 27.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
125 °C
150 °C
350
±15
252
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
21
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Buck Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
30
25
20
15
10
5
22,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 30.
FWD
figure 31.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
22
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Buck Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
dirr/dt ──────
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
252
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 34.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
700
IC MAX
600
500
400
300
200
100
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
23
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Boost Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
15,0
12,5
10,0
7,5
Eon
Eon
Eoff
Eoff
Eon
Eon
Eon
Eon
Eoff
5,0
Eoff
Eoff
Eoff
2,5
0,0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
Ω
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
2
figure 37.
FWD
figure 38.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
24
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Boost Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
-1
10
-1
tf
tr
10
tr
tf
-2
10
-3
10
-2
10
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
2
°C
150
350
±15
252
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
2
figure 41.
FWD
figure 42.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
25
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Boost Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
30
25
20
15
10
5
22,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 45.
FWD
figure 46.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
300
250
200
150
100
50
350
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
125 °C
150 °C
350
±15
252
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
26
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Boost Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
17500
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
15000
12500
10000
7500
5000
2500
0
0
50
100
150
200
250
300
350
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
252
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 49.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
700
IC MAX
600
500
400
300
200
100
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
27
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Switching Definitions
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
28
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Switching Definitions
figure 54.
FWD
figure 55.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
29
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-PT07NIB300S502-LE06F58Y
30-PT07NIB300S502-LE06F58Y-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Function 28
Pin
1
X
70
Y
6
3
0
3
0
0
0
0
0
0
3
0
3
0
3
0
3
0
3
0
3
0
0
0
0
0
3
5
2,5
0
3
DC+1
DC+2
DC+2
DC+2
DC+2
DC+2
DC+2
GND2
GND2
GND2
GND2
DC-2
DC-2
DC-2
DC-2
DC-2
DC-2
DC-1
DC-1
DC-1
DC-1
DC-1
DC-1
GND1
GND1
GND1
GND1
DC+1
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
DC+1
DC+1
DC+1
DC+1
S12
2
70
2,5
0
3
70
0
3
4
67,5
67,5
65
0
0
5
32,25
29,25
19,95
16,95
2
23,55
23,55
23,95
25,55
36
6
G12
S14
7
57,75
55,25
52,75
50,25
43
8
G14
Ph1
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
4,5
36
Ph1
7
36
Ph1
43
9,5
36
Ph1
40,5
40,5
38
12
36
Ph1
14,5
38
36
Ph1
36
Ph2
38
40,5
43
36
Ph2
32
36
Ph2
32
45,5
48
36
Ph2
29,5
29,5
27
36
Ph2
50,5
64,2
70,6
45,7
48,7
59,2
62,2
36
Ph2
36,6
36,55
24,05
24,05
22
Therm1
Therm2
S13
27
19,75
17,25
14,75
12,25
5
G13
S11
22
G11
Copyright Vincotech
30
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Pinout
DC+2
DC+1
27,28,29,30,31,32
1,2,3,4,5,6
D14
D16
T11
D41
G11
54
S11
53
Ph1
37,38,39,40,41,42
GND1
23,24,25,26
T14
D44
T13
D43
D11
G13
G14
36
52
D12
S13
S14
35
51
GND2
7,8,9,10
Ph2
43,44,45,46,47,48
D15
D13
T12
D42
G12
34
S12
33
DC-1
17,18,19,20,21,22
DC-2
11,12,13,14,15,16
Rt
Therm2
50
Therm1
49
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
D41, D42
T13, T14
IGBT
FWD
FWD
IGBT
650 V
650 V
650 V
650 V
300 A
300 A
30 A
Buck Switch
Buck Diode
Buck Sw. Protection Diode
Boost Switch
300 A
Serial devices.
Values apply to complete device.
D13, D15, D14, D16
FWD
1300 V
650 V
300 A
30 A
Boost Diode
D43, D44
Rt
FWD
Boost Sw. Protection Diode
Thermistor
Thermistor
Copyright Vincotech
31
09 Feb. 2023 / Revision 3
30-PT07NIB300S502-LE06F58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Buck and Boost Sw. Protection Diode static characteristics
are updated
30-PT07NIB300S502-LE06F58Y-D3-14
9 Feb. 2023
DC isolation test voltage is updated
Separated datasheet
New datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
09 Feb. 2023 / Revision 3
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