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80-M2122PA300M7-K700F7 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
80-M2122PA300M7-K700F7
型号： 80-M2122PA300M7-K700F7
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总18页 (文件大小：6622K)
中文：  中文翻译
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80-M2122PA300M7-K700F70  
datasheet  
MiniSKiiP® DUAL 2  
1200 V / 300 A  
Topology features  
MiniSKiiP® 2 16 mm housing  
● Half Bridge  
● Temperature sensor  
Component features  
● Easy paralleling  
● Low turn-off losses  
● Low collector emitter saturation voltage  
● Positive temperature coefficient  
● Short tail current  
● Switching optimized for EMC  
Housing features  
● Base isolation: Al2O3  
● Easy assembly in one mounting step  
● Flexible PCB design w/o pin holes  
● Half-Bridge configuration  
● Rugged solderless spring contacts  
Schematic  
Extra features  
● Equivalent: SKiiP 27GB12T7V1  
Target applications  
● Industrial Drives  
● Power Supply  
Types  
● 80-M2122PA300M7-K700F70  
Copyright Vincotech  
1
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Half-Bridge Switch  
VCES  
Collector-emitter voltage  
1200  
312  
600  
609  
±20  
9,5  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
tSC  
Short circuit ratings  
VGE = 15 V, VCC = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Half-Bridge Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
221  
373  
175  
V
A
IF  
Forward current (DC current)  
Total power dissipation  
Tj = Tjmax  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Visol  
Visol  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
V
V
Isolation voltage  
AC Voltage  
With std lid  
tp = 1 min  
Creepage distance  
Clearance  
For more informations see handling  
instructions  
6,3  
mm  
mm  
With std lid  
For more informations see handling  
instructions  
6,3  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
Copyright Vincotech  
2
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Half-Bridge Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
10  
0,03  
300  
25  
5,4  
6
6,6  
V
V
25  
1,58  
1,8  
1,85(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
1,86  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
200  
µA  
nA  
Ω
20  
1000  
1,5  
60000  
1760  
640  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
0
10  
25  
25  
Reverse transfer capacitance  
Gate charge  
VCC = 600 V  
0/15  
300  
2000  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,16  
K/W  
Dynamic  
25  
447  
465  
td(on)  
Turn-on delay time  
125  
150  
25  
ns  
ns  
466  
69  
tr  
Rise time  
125  
150  
25  
81  
86  
Rgon = 2 Ω  
Rgoff = 2 Ω  
356  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
392  
ns  
402  
±15  
600  
300  
89,66  
101,05  
117,74  
36,86  
47,81  
52,37  
21,58  
28,33  
30,68  
tf  
125  
150  
25  
ns  
QrFWD=25,81 µC  
QrFWD=40,86 µC  
QrFWD=45,81 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
3
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Half-Bridge Diode  
Static  
25  
1,8  
1,9  
1,9  
2,1(1)  
VF  
IR  
Forward voltage  
300  
125  
150  
V
Reverse leakage current  
Vr = 1200 V  
25  
80  
µA  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,26  
K/W  
Dynamic  
25  
169,63  
177,69  
175,96  
340,31  
481,64  
525,46  
25,81  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=4219 A/µs  
di/dt=2604 A/µs  
di/dt=3445 A/µs  
Qr  
Recovered charge  
±15  
600  
300  
125  
150  
25  
40,86  
μC  
45,81  
7,46  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
12,67  
mWs  
A/µs  
14,36  
705,68  
495,36  
463,25  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
4
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
5
kΩ  
%
R100 = 493 Ω  
100  
-5  
5
245  
1,4  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±2 %  
Tol. ±2 %  
3375  
3437  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
K
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
5
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
800  
800  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
600  
400  
200  
0
600  
400  
200  
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
300  
10  
250  
200  
150  
100  
50  
-1  
10  
-2  
10  
-3  
10  
0,5  
0,2  
0,1  
-4  
0,05  
0,02  
0,01  
0,005  
0
10  
-5  
0
0,0  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2,5  
5,0  
7,5  
10,0  
12,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
10  
μs  
V
D =  
tp / T  
0,156  
25 °C  
VCE  
=
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
1,06E-02  
3,37E-02  
6,05E-02  
4,30E-02  
8,22E-03  
4,29E+00  
1,05E+00  
2,06E-01  
5,65E-02  
4,27E-03  
Copyright Vincotech  
6
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Safe operating area  
Gate voltage vs gate charge  
IC = f(VCE  
)
VGE = f(Qg)  
1000  
17,5  
15,0  
12,5  
10,0  
7,5  
100µs  
100  
10  
1ms  
10ms  
100ms  
DC  
1
5,0  
0,1  
0,01  
2,5  
0,0  
1
10  
100  
1000  
10000  
0
250  
500  
750 1000 1250 1500 1750 2000 2250  
V
CE(V)  
Qg(μC)  
D =  
IC  
=
single pulse  
150  
25  
A
Ts =  
Tj =  
80  
15  
°C  
V
°C  
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
7
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Diode Characteristics  
figure 7.  
FWD  
figure 8.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
800  
600  
400  
200  
0
10  
-1  
10  
-2  
10  
-3  
10  
0,5  
0,2  
0,1  
-4  
0,05  
0,02  
0,01  
0,005  
0
10  
-5  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
μs  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
D =  
tp / T  
0,255  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
2,25E-02  
4,86E-02  
1,24E-01  
4,63E-02  
1,33E-02  
3,89E+00  
9,10E-01  
1,25E-01  
2,41E-02  
2,19E-03  
Copyright Vincotech  
8
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Thermistor Characteristics  
figure 9.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
6000  
5000  
4000  
3000  
2000  
1000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
9
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Switching Characteristics  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
125  
100  
75  
50  
25  
0
100  
80  
60  
40  
20  
0
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
100  
200  
300  
400  
500  
600  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
Ω
125 °C  
150 °C  
600  
±15  
300  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
2
figure 12.  
FWD  
figure 13.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
100  
200  
300  
400  
500  
600  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
300  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
10  
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Switching Characteristics  
figure 14.  
IGBT  
figure 15.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
td(on)  
td(off)  
tr  
tf  
tr  
tf  
-1  
10  
-1  
10  
-2  
10  
-2  
10  
0
100  
200  
300  
400  
500  
600  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
±15  
2
°C  
V
150  
600  
±15  
300  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
V
Ω
Ω
A
2
figure 16.  
FWD  
figure 17.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
trr  
trr  
trr  
trr  
trr  
trr  
0
100  
200  
300  
400  
500  
600  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
300  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
11  
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Switching Characteristics  
figure 18.  
FWD  
figure 19.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
70  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
100  
200  
300  
400  
500  
600  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
300  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 20.  
FWD  
figure 21.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
200  
175  
150  
125  
100  
75  
300  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
50  
25  
0
0
0
100  
200  
300  
400  
500  
600  
IC(A)  
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
300  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
12  
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Switching Characteristics  
figure 22.  
FWD  
figure 23.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
4500  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
4000  
dirr/dt ──────  
3500  
3000  
2500  
2000  
1500  
1000  
500  
0
0
100  
200  
300  
400  
500  
600  
IC(A)  
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
300  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 24.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
700  
IC MAX  
600  
500  
400  
300  
200  
100  
0
0
250  
500  
750  
1000  
1250  
1500  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
2
2
Ω
Copyright Vincotech  
13  
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Switching Definitions  
figure 25.  
IGBT  
figure 26.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 27.  
IGBT  
figure 28.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
14  
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Half-Bridge Switching Definitions  
figure 29.  
FWD  
figure 30.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
15  
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Ordering Code  
Version  
Ordering Code  
With std lid (6.5mm height) + no thermal grease  
With thin lid (2.8mm height) + no thermal grease  
80-M2122PA300M7-K700F70-/0A/  
80-M2122PA300M7-K700F70-/0B/  
80-M2122PA300M7-K700F70-/1A/  
80-M2122PA300M7-K700F70-/1B/  
80-M2122PA300M7-K700F70-/4A/  
80-M2122PA300M7-K700F70-/4B/  
80-M2122PA300M7-K700F70-/5A/  
80-M2122PA300M7-K700F70-/5B/  
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Marking  
Name  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
Date code  
UL & VIN  
Lot  
Serial  
Text  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
S12  
G12  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
Ph  
-7,6  
4,7  
21,9  
21,9  
21,8  
18,6  
15,4  
12,2  
9
2
3
18,6  
18,6  
18,6  
18,6  
18,6  
22,5  
22,5  
22,5  
22,5  
22,5  
-22,5  
-22,5  
-22,5  
-22,5  
-22,5  
-18,6  
-18,6  
-18,6  
-18,6  
-18,6  
-6,8  
4
5
6
7
8
21,8  
18,6  
15,4  
12,2  
9
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
7,8  
4,6  
Ph  
1,4  
Ph  
-1,8  
-5  
Ph  
Ph  
7,8  
Ph  
4,6  
Ph  
1,4  
Ph  
-1,8  
-5  
Ph  
Ph  
1,6  
Therm1  
Therm2  
DC-  
DC-  
DC-  
DC-  
DC-  
DC-  
DC-  
DC-  
DC-  
DC-  
-6,8  
-1,6  
-9  
18,6  
18,6  
18,6  
18,6  
18,6  
22,5  
22,5  
22,5  
22,5  
22,5  
4,6  
-12,2  
-15,4  
-18,6  
-21,8  
-9  
-12,2  
-15,4  
-18,6  
-21,8  
-18,7  
-21,9  
S11  
G11  
1,7  
Pad positions refers to center point. For more informations on pad design please see package data  
Copyright Vincotech  
16  
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Pinout  
DC+  
3-12  
T12  
T11  
D11  
D12  
G12  
2
S12  
1
Ph  
13-22  
G11  
36  
S11  
35  
Rt  
DC-  
25-34  
Therm1  
Therm2  
24  
23  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T12  
D11, D12  
Rt  
IGBT  
FWD  
NTC  
1200 V  
1200 V  
300 A  
300 A  
Half-Bridge Switch  
Half-Bridge Diode  
Thermistor  
Copyright Vincotech  
17  
07 Aug. 2022 / Revision 3  
80-M2122PA300M7-K700F70  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 72  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSKiiP® 2 packages see vincotech.com website.  
Package data  
Package data for MiniSKiiP® 2 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
New Datasheet format, module is unchanged  
Correct tau values of thermal characteristic  
80-M2122PA300M7-K700F70-D3-14  
7 Aug. 2022  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
18  
07 Aug. 2022 / Revision 3  

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