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80-M2126PA050M7-K718F7 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
80-M2126PA050M7-K718F7
型号： 80-M2126PA050M7-K718F7
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总17页 (文件大小：2335K)
中文：  中文翻译
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80-M2126PA050M7-K718F70  
datasheet  
MiniSKiiP® PACK 2  
1200 V / 50 A  
MiniSKiiP® housing  
Features  
● IGBT M7 with low VCEsat and improved EMC bahavior  
● Sloder-free spring contact technology  
● Bultin PTC  
Schematic  
Target applications  
● Industrial Drives  
Types  
● 80-M2126PA050M7-K718F70  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
Collector-emitter voltage  
VCES  
1200  
50  
V
A
Collector current  
IC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
ICRM  
tp limited by Tjmax  
100  
153  
±20  
175  
A
Ptot  
Ts = 80 °C  
W
V
Tj = Tjmax  
VGES  
Maximum junction temperature  
Tjmax  
°C  
Copyright Vincotech  
1
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
50  
V
A
IF  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
IFRM  
tp limited by Tjmax  
100  
104  
175  
A
Ptot  
Ts = 80 °C  
Tj = Tjmax  
W
°C  
Maximum junction temperature  
Tjmax  
Module Properties  
Thermal Properties  
Storage temperature  
Tstg  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Tjop  
-40…(Tjmax - 25)  
Isolation Properties  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
6,3  
V
Visol  
Isolation voltage  
AC Voltage  
With std lid  
tp = 1 min  
V
Creepage distance  
Clearance  
mm  
mm  
For more information see handling instructions  
With std lid  
6,3  
For more information see handling instructions  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
2
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A]  
Tj [°C]  
Min  
Max  
VF [V] IF [A]  
Inverter Switch  
Static  
VGE(th) VGE = VCE  
Gate-emitter threshold voltage  
0,005  
50  
25  
5,4  
6
6,6  
1,9  
V
V
25  
125  
150  
1,55  
1,77  
1,83  
VCEsat  
Collector-emitter saturation voltage  
15  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
ICES  
IGES  
rg  
0
1200  
0
25  
25  
90  
µA  
nA  
Ω
15  
500  
none  
10000  
350  
Cies  
Output capacitance  
Coes  
Cres  
Qg  
10  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
130  
15  
600  
50  
410  
nC  
Thermal  
λ
= 2,5 W/mK  
paste  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,62  
K/W  
(HPTP)  
25  
176  
176  
190  
52  
125  
150  
25  
td(on)  
Turn-on delay time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
58  
60  
Rise time  
tr  
Rgoff = 8 Ω  
Rgon = 8 Ω  
ns  
206  
229  
241  
92  
123  
122  
4,82  
6,38  
6,25  
2,98  
4,25  
5,03  
Turn-off delay time  
Fall time  
td(off)  
±15  
600  
48  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 4,59 μC  
= 7,1 μC  
= 8 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
3
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A]  
Tj [°C]  
Min  
Max  
VF [V] IF [A]  
Inverter Diode  
Static  
25  
125  
150  
1,66  
1,78  
1,79  
2,15  
50  
VF  
IR  
Forward voltage  
50  
V
Reverse leakage current  
1200  
25  
µA  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Thermal resistance junction to sink  
Rth(j-s)  
0,91  
K/W  
Dynamic  
25  
29  
33  
33  
Peak recovery current  
IRRM  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
A
339  
435  
511  
4,93  
7,08  
8,04  
1,79  
2,59  
3,33  
195  
128  
114  
trr  
Qr  
Reverse recovery time  
ns  
di/dt = 388 A/μs  
di/dt = 450 A/μs  
di/dt = 498 A/μs  
±15  
600  
48  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Thermistor  
R
ΔR/R  
R
Rated resistance  
25  
1
kΩ  
%
Deviation of R100  
R100  
R100 = 1670 Ω  
100  
100  
25  
-2  
+2  
1670  
0,76  
Ω
Power dissipation constant  
A-value  
mW/K  
1/K  
1/K²  
7,635*10-3  
1,731*10-5  
A(25/50)  
25  
B-value  
B(25/100)  
25  
Vincotech PTC Reference  
E
Copyright Vincotech  
4
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
V GE  
=
T j:  
T j =  
from  
7 V to 17 V in steps of 1 V  
V GE  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
100  
I
Z
10-1  
10-2  
10-3  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
V CE  
=
T j:  
=
0,62  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
2,32E-02  
4,34E-02  
1,15E-01  
3,33E-01  
6,22E-02  
4,17E-02  
2,88E-03  
4,64E+00  
3,95E-01  
7,05E-02  
2,36E-02  
4,58E-03  
7,04E-04  
3,40E-04  
Copyright Vincotech  
5
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(V CE  
)
I
D =  
single pulse  
Ts  
=
80  
ºC  
V
=
±15  
Tjmax  
VGE  
Tj =  
Copyright Vincotech  
6
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
= f(  
)
V F  
= f( )  
t p  
I F  
Z th(j-s)  
100  
Z
10-1  
10-2  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
t p  
=
D =  
t p / T  
0,91  
250  
μs  
25 °C  
125 °C  
150 °C  
:
T j  
R th(j-s)  
=
K/W  
FWD thermal model values  
R (K/W)  
(s)  
τ
8,48E-02  
9,67E-02  
5,83E+00  
3,26E-01  
4,85E-02  
1,77E-02  
2,88E-03  
5,73E-04  
4,29E-01  
1,97E-01  
6,32E-02  
3,90E-02  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Thermistor  
Typical PTC characteristic as a function of temperature  
R = f(T)  
Copyright Vincotech  
7
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g  
)
E = f(IC  
)
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
:
VCE  
VGE  
=
=
=
=
600  
±15  
8
V
V
Ω
Ω
Tj  
VCE  
VGE  
I C  
=
=
=
600  
±15  
48  
V
V
A
Tj:  
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(Ic  
)
Erec = f(R g)  
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
:
VCE  
=
=
=
600  
±15  
8
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
48  
V
V
A
Tj  
VGE  
R gon  
Copyright Vincotech  
8
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g  
)
t
t
With an inductive load at  
With an inductive load at  
150  
600  
±15  
8
°C  
V
150  
600  
±15  
48  
°C  
V
Tj  
VCE  
=
=
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
=
V
V
VGE  
R gon  
R goff  
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
t rr = f(R gon  
)
t
t
600  
600  
V
V
Ω
25 °C  
125 °C  
150 °C  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
:
:
Tj  
VGE  
R gon  
=
=
±15  
8
VGE  
I C  
=
±15  
48  
Tj  
=
Copyright Vincotech  
9
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(I C  
)
Q r = f(R gon)  
Q
Q
600  
600  
±15  
8
V
V
Ω
25 °C  
125 °C  
150 °C  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
IC  
=
:
:
Tj  
=
=
±15  
48  
Tj  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(I C  
)
I RM = f(R gon)  
I
I
600  
±15  
8
V
V
Ω
25 °C  
125 °C  
150 °C  
600  
±15  
48  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
:
:
Tj  
VGE  
=
=
=
Tj  
R gon  
=
Copyright Vincotech  
10  
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
diF/dt  
dir r/dt  
diF/dt  
dirr/dt  
t
t
i
i
600  
V
V
Ω
25 °C  
125 °C  
150 °C  
600  
±15  
48  
V
V
A
25 °C  
At  
VCE  
=
At  
VCE  
VGE  
IC  
=
:
:
Tj  
VGE  
R gon  
=
=
±15  
8
=
125 °C  
150 °C  
Tj  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
I
IC MAX  
I
I
V
At  
Tj  
=
=
=
175  
°C  
Ω
8
8
R gon  
R goff  
Ω
Copyright Vincotech  
11  
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switching Definitions  
General conditions  
=
=
=
T j  
Rgon  
125 °C  
8 Ω  
R goff  
8 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VCE  
VGE  
IC  
VGE  
tEoff  
VCE  
tEon  
-15  
-15  
V
V
VGE (0%) =  
VGE (0%) =  
15  
V
15  
V
VGE (100%) =  
VC (100%) =  
IC (100%) =  
VGE (100%) =  
VC (100%) =  
I C (100%) =  
600  
51  
V
600  
51  
V
A
A
0,229  
0,683  
μs  
μs  
0,176  
0,561  
μs  
μs  
tdoff  
tEoff  
=
=
t don  
t Eon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
600  
51  
V
600  
51  
V
VC (100%) =  
IC (100%) =  
VC (100%) =  
I C (100%) =  
A
A
0,125  
μs  
0,058  
μs  
tf  
=
t r =  
Copyright Vincotech  
12  
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Eoff  
Eon  
Pon  
Poff  
tEon  
tEoff  
30,49  
4,25  
0,68  
kW  
mJ  
μs  
30,49  
6,38  
0,56  
kW  
mJ  
μs  
P off (100%) =  
Eoff (100%) =  
P on (100%) =  
Eon (100%) =  
tEoff  
=
t Eon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
VF  
fitted  
VF (100%) =  
IF (100%) =  
IRRM (100%) =  
600  
51  
V
A
-33  
0,435  
A
μs  
trr  
=
Copyright Vincotech  
13  
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Inverter Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr  
)
Turn-on Switching Waveforms & definition of tErec (tErec  
=
integrating time for Erec)  
Erec  
IF  
Qr  
tErec  
Prec  
IF (100%) =  
Qr (100%) =  
51  
A
P rec (100%) =  
Erec (100%) =  
30,49  
2,59  
0,88  
kW  
7,08  
0,88  
μC  
μs  
mJ  
μs  
tQr  
=
t Erec =  
Copyright Vincotech  
14  
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Ordering Code & Marking  
Version  
Ordering Code  
With std lid (6.5mm height) + no thermal grease  
With thin lid (2.8mm height) + no thermal grease  
80-M2126PA050M7-K718F70-/0A/  
80-M2126PA050M7-K718F70-/0B/  
80-M2126PA050M7-K718F70-/1A/  
80-M2126PA050M7-K718F70-/1B/  
80-M2126PA050M7-K718F70-/4A/  
80-M2126PA050M7-K718F70-/4B/  
80-M2126PA050M7-K718F70-/5A/  
80-M2126PA050M7-K718F70-/5B/  
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
LLLLL  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
SSSS  
Outline  
PCB pad table  
Y
PCB pad table  
Pin  
X
Pin  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
X
Y
Function  
DC+123  
DC+123  
DC+123  
DC+123  
DC+123  
Function  
Ph2  
24,38  
24,38  
24,38  
24,38  
24,38  
-21,8  
-18,6  
-15,4  
-12,2  
-9  
-12,22  
10,3  
1
2
3
Not assembled  
4
5
6
7
8
-24,38  
-21,8  
-18,6  
-15,4  
-12,2  
-9  
G15  
S15  
-24,38  
-24,38  
-24,38  
-24,38  
-24,38  
Not assembled  
DC-123  
DC-123  
DC-123  
S13  
24,38  
24,38  
12,2  
Therm1  
9
Not assembled  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
-5,8  
Not assembled  
21,8  
Therm2  
59  
60  
-24,38  
0,7  
G13  
Not assembled  
61  
62  
63  
64  
65  
Not assembled  
-24,38  
-24,38  
-24,38  
-24,38  
7,1  
DC-123  
DC-123  
S11  
15,4  
18,6  
21,8  
13,42  
-21,8  
G16  
G11  
Not assembled  
8,38  
8,38  
2,6  
5,8  
S14  
G14  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
Not assembled  
8,38  
8,38  
2,46  
2,46  
2,46  
2,46  
2,46  
18,6  
21,8  
-21,8  
-18,6  
-15,4  
-12,2  
-9  
S12  
G12  
S16  
Ph3  
Ph3  
Ph3  
Ph3  
Not assembled  
0,03  
0,03  
0,03  
0,03  
0,03  
-8,5  
9
Ph1  
Ph1  
Ph1  
Ph1  
Ph1  
Ph3  
12,2  
15,4  
18,6  
21,8  
-21,8  
Not assembled  
-12,22  
-12,22  
-9  
-5,8  
Ph2  
Ph2  
Not assembled  
-12,22  
-12,22  
3,9  
7,1  
Ph2  
Ph2  
Pad positions refers to center point. For more informations on pad design please see package data  
Copyright Vincotech  
15  
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11, T12, T13, T14,  
T15, T16  
IGBT  
1200 V  
50 A  
50 A  
Inverter Switch  
D11, D12, D13, D14,  
D15, D16  
FWD  
PTC  
1200 V  
Inverter Diode  
Thermistor  
Rt  
Copyright Vincotech  
16  
25 Nov. 2017 / Revision 1  
80-M2126PA050M7-K718F70  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.  
Package data  
Package data for MiniSkiiP® 2 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
80-M2126PA050M7-K718F70-D1-14  
25 Nov. 2017  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
25 Nov. 2017 / Revision 1  

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