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80-M2126PA075M7-K719F7 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
80-M2126PA075M7-K719F7
型号： 80-M2126PA075M7-K719F7
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总16页 (文件大小：2179K)
中文：  中文翻译
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80-M2126PA075M7-K719F70  
datasheet  
MiniSKiiP® PACK 2  
1200 V / 75 A  
Features  
MiniSkiip® 2 housing  
● IGBT M7 technology with low VCEsat and improved EMC behavior  
● Solder-free spring contact technology  
Schematic  
Target applications  
● Industrial Drives  
Types  
● 80-M2126PA075M7-K719F70  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
1200  
75  
V
A
Collector current  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
150  
196  
±20  
175  
A
Ts = 80 °C  
W
V
Maximum junction temperature  
°C  
Copyright Vincotech  
1
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
1200  
83  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
200  
149  
175  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
V
V
Visol  
Isolation voltage  
AC Voltage  
With std lid  
tp = 1 min  
Creepage distance  
Clearance  
6,3  
mm  
mm  
For more informations see handling  
With std lid  
6,3  
For more informations see handling  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
2
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0075 25  
25  
5,4  
6
6,6  
1,9  
V
V
1,55  
1,70  
1,75  
VCEsat  
Collector-emitter saturation voltage  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
100  
500  
µA  
nA  
Ω
20  
4
Cies  
Coes  
Cres  
Qg  
16000  
480  
Output capacitance  
#VALUE!  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
190  
15  
600  
75  
570  
nC  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,49  
K/W  
Dynamic  
25  
197  
208  
212  
29  
td(on)  
125  
150  
25  
Turn-on delay time  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
38  
39  
Rgon = 2 Ω  
Rgoff = 2 Ω  
ns  
203  
233  
242  
86  
113  
111  
5,559  
7,819  
8,496  
5,076  
6,804  
td(off)  
Turn-off delay time  
Fall time  
±15  
600  
75  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 8,5 μC  
= 13,4 μC  
= 15,3 μC  
Eon  
Turn-on energy (per pulse)*  
mWs  
125  
Eoff  
Turn-off energy (per pulse)*  
* Ls = 12 nH  
150  
7,285  
Copyright Vincotech  
3
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
1,82  
1,96  
1,97  
2,1  
40  
VF  
IR  
125  
150  
Forward voltage  
100  
V
Reverse leakage current  
1200  
25  
µA  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,64  
K/W  
Dynamic  
25  
75  
77  
78  
IRRM  
125  
150  
25  
Peak recovery current  
A
278  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
432  
459  
ns  
di/dt = 2268 A/μs  
di/dt = 1969 A/μs  
di/dt = 1970 A/μs  
8,539  
13,394  
15,308  
3,195  
5,193  
5,995  
802  
±15  
600  
75  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
614  
544  
Thermistor  
R
ΔR/R  
R
Rated resistance  
25  
1
kΩ  
%
Deviation of R100  
R100  
R100 = 1670 Ω  
100  
100  
25  
-2  
+2  
1670  
0,76  
Ω
Power dissipation constant  
A-value  
mW/K  
1/K  
1/K²  
7,635*10-3  
1,731*10-5  
A(25/50)  
25  
B(25/100)  
B-value  
25  
Vincotech PTC Reference  
E
Copyright Vincotech  
4
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
= f(  
250  
)
VCE  
= f(  
)
VCE  
I C  
I C  
250  
VGE  
:
7
V
V
V
I
I
I
I
I
I
I
I
8
9
200  
150  
100  
50  
10  
11  
12  
13  
14  
15  
16  
17  
V
V
V
V
V
V
V
V
200  
150  
100  
50  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)  
VC E (V)  
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
= f(  
80  
)
VGE  
= f( )  
Z th(j-s) tp  
I C  
100  
I
I
I
I
Z
Z
Z
Z
60  
40  
20  
0
10-1  
10-2  
10-3  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
0
3
6
9
12  
VG E (V)  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
=
D
tp  
tp / T  
=
:
Tj  
=
R th(j-s)  
0,49  
K/W  
VCE  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
1,81E-02  
3,38E-02  
8,98E-02  
2,60E-01  
4,85E-02  
3,25E-02  
2,24E-03  
3,62E+00  
3,08E-01  
5,50E-02  
1,84E-02  
3,57E-03  
5,49E-04  
2,65E-04  
Copyright Vincotech  
5
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
1000  
I
I
I
I
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
VC E (V)  
D =  
single pulse  
80  
Ts  
=
ºC  
V
=
±15  
VGE  
Tj =  
Tjmax  
Copyright Vincotech  
6
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
= f(  
300  
)
= f( )  
tp  
I F  
VF  
Z th(j-s)  
100  
250  
200  
150  
100  
50  
Z
Z
Z
-1  
Z
10  
10-2  
0,5  
0,2  
0,1  
10-3  
0,05  
0,02  
0,01  
0,005  
0
10-4  
=
0
10-5  
=
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
1
2
3
4
5
VF (V)  
=
250  
μs  
25 °C  
125 °C  
150 °C  
/
tp  
D
tp  
T
:
Tj  
0,64  
K/W  
R th(j-s)  
FWD thermal model values  
(K/W)  
R
τ (s)  
2,37E-02  
4,45E-02  
1,18E-01  
3,42E-01  
6,37E-02  
4,28E-02  
2,95E-03  
4,76E+00  
4,05E-01  
7,23E-02  
2,42E-02  
4,70E-03  
7,22E-04  
3,48E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Typical PTC characteristic  
as a function of temperature  
R = f(  
Thermistor  
T
)
PTC-typical temperature characteristic  
2000  
1500  
1000  
500  
0
25  
50  
75  
100  
125  
T (°C)  
Copyright Vincotech  
7
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
25  
25  
E
E
E
E
E
E
E
E
Eon  
Eon  
20  
15  
10  
5
20  
15  
10  
5
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
0
0
20  
40  
60  
80  
100  
120  
25 °C  
140  
160  
IC (A)  
0
5
10  
15  
20  
25  
30  
35  
R
g (Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
600  
±15  
2
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
75  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
2
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
8
10  
E
E
E
E
E
E
E
E
8
6
4
2
0
Erec  
Erec  
6
4
2
0
Erec  
Erec  
Erec  
Erec  
0
5
10  
15  
20  
25  
30  
35  
0
20  
40  
60  
80  
100  
120  
140  
160  
IC (A)  
R
g (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
600  
±15  
2
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
75  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
8
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
10  
10  
t
t
t
t
t
t
t
t
td(on)  
1
1
td(off)  
td(on)  
td(off)  
tr  
0,1  
0,1  
tf  
tf  
tr  
0,01  
0,01  
0
5
10  
15  
20  
25  
30  
35  
0
20  
40  
60  
80  
100  
120  
140  
160  
R
g (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
Tj =  
150  
600  
±15  
2
°C  
V
Tj =  
150  
600  
±15  
75  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
2
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon  
)
0,8  
0,8  
t
t
t
t
t
t
t
t
trr  
trr  
trr  
trr  
0,6  
0,4  
0,2  
0
0,6  
0,4  
0,2  
0
trr  
trr  
0
20  
40  
60  
80  
100  
120  
25 °C  
140  
IC (A)  
160  
0
5
10  
15  
20  
25  
30  
35  
Rgon (Ω)  
At  
VCE  
=
600  
±15  
2
V
V
Ω
At  
VCE  
=
600  
V
V
A
25 °C  
VGE  
R gon  
=
=
Tj:  
VGE  
I C  
=
±15  
75  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
Copyright Vincotech  
9
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
25  
20  
Q
Q
Q
Q
Q
Q
Q
Q
Qr  
Qr  
20  
15  
10  
5
16  
12  
8
Qr  
Qr  
Qr  
Qr  
4
0
0
0
20  
40  
60  
80  
100  
120  
25 °C  
140  
160  
0
5
10  
15  
20  
25  
30  
35  
Rg on (Ω)  
IC (A)  
At  
VCE  
VGE  
R gon  
=
600  
±15  
2
V
V
Ω
At  
VCE  
VGE  
I C  
=
600  
±15  
75  
V
V
A
25 °C  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
100  
100  
I
I
I I  
I I  
I
I
IRM  
IRM  
IRM  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
IRM  
IRM  
IRM  
0
5
10  
15  
20  
25  
30  
35  
Rgo n (Ω)  
0
20  
40  
60  
80  
100  
120  
25 °C  
140  
160  
IC (A)  
At  
VCE  
=
600  
±15  
2
V
V
Ω
At  
VCE  
=
600  
±15  
75  
V
V
A
25 °C  
VGE  
=
=
Tj:  
VGE  
I C  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
10  
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
3000  
3000  
d
iF/d  
ir r/d  
t
t
d
iF/d  
t
t
t
t t  
t t  
t
t
d
dirr/d  
t
i
i
i i  
i i  
i
i
2500  
2000  
1500  
1000  
500  
0
2500  
2000  
1500  
1000  
500  
0
0
5
10  
15  
20  
25  
30  
35  
g on (Ω)  
0
20  
40  
60  
80  
100  
120  
25 °C  
140  
160  
R
IC (A)  
At  
VCE  
=
600  
±15  
2
V
V
Ω
At  
VCE  
VGE  
I C  
=
600  
±15  
75  
V
25 °C  
125 °C  
150 °C  
:
Tj  
125 °C  
150 °C  
V
A
:
VGE  
=
=
=
Tj  
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
160  
I
I
I
I
IC MAX  
140  
120  
100  
80  
I
I
I
I
I
I
I
I
60  
40  
20  
V
V
V
V
0
0
200  
400  
600  
800  
1000  
1200  
1400  
C E (V)  
V
At  
Tj  
=
=
=
125  
°C  
Ω
R gon  
R goff  
2
2
Ω
Copyright Vincotech  
11  
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Switching Definitions  
General conditions  
=
=
=
T j  
125 °C  
2 Ω  
2 Ω  
R gon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
%
%
VGE 90%  
VCE 90%  
IC  
IC  
VGE  
VGE  
VCE  
tdon  
tEoff  
IC 1%  
VCE 3%  
VCE  
IC 10%  
VGE 10%  
tEon  
t
(µs)  
t (µs)  
VGE (0%) =  
VGE (100%) =  
C (100%) =  
C (100%) =  
tdoff  
-15  
15  
V
VGE (0%) =  
-15  
V
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
V
600  
75  
V
600  
75  
V
I
A
A
=
233  
ns  
tdon  
=
208  
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
fitted  
%
%
IC  
IC  
IC 90%  
IC 60%  
IC 40%  
VCE  
IC 90%  
tr  
IC10%  
VCE  
IC 10%  
tf  
t
(µs)  
t
(µs)  
VC (100%) =  
I C (100%) =  
600  
75  
V
VC (100%) =  
I C (100%) =  
600  
75  
V
A
A
tf  
=
113  
ns  
tr  
=
38  
ns  
Copyright Vincotech  
12  
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Inverter Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
%
%
Qr  
trr  
tQr  
IF  
IF  
fitted  
IRRM 10%  
VF  
IRRM 90%  
IRRM 100%  
t (µs)  
t (µs)  
VF (100%) =  
600  
75  
V
I F (100%) =  
Q r (100%) =  
75  
A
I
I
F (100%) =  
A
13,39  
μC  
RRM (100%) =  
77  
A
trr  
=
432  
ns  
Copyright Vincotech  
13  
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Ordering Code & Marking  
Version  
With std lid (6.5mm height) + no thermal grease  
With thin lid (2.8mm height) + no thermal grease  
Ordering Code  
80-M2126PA075M7-K719F70-/0A/  
80-M2126PA075M7-K719F70-/0B/  
80-M2126PA075M7-K719F70-/1A/  
80-M2126PA075M7-K719F70-/1B/  
80-M2126PA075M7-K719F70-/4A/  
80-M2126PA075M7-K719F70-/4B/  
80-M2126PA075M7-K719F70-/5A/  
80-M2126PA075M7-K719F70-/5B/  
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
PCB pad table  
PCB pad table  
Pin  
X
Y
Pin  
X
Y
Function  
DC+123  
Function  
Ph2  
24,38 -21,8  
24,38 -18,6  
24,38 -15,4  
24,38 -12,2  
1
2
48 -12,22  
7,1  
DC+123  
DC+123  
DC+123  
DC+123  
49 -12,22 10,3  
Ph2  
3
4
50  
51  
52  
Not assembled  
Not assembled  
Not assembled  
5
24,38  
24,38  
24,38  
-9  
6
Not assembled  
Not assembled  
53 -24,38 -21,8  
54 -24,38 -18,6  
G15  
S15  
7
8
12,2  
Therm1  
55 -24,38 -15,4 DC-123  
56 -24,38 -12,2 DC-123  
9
Not assembled  
Not assembled  
10  
57 -24,38  
-9  
DC-123  
S13  
11  
12  
13  
21,8  
Not assembled  
Not assembled  
Therm2  
58 -24,38 -5,8  
59  
Not assembled  
60 -24,38  
0,7  
G13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Not assembled  
Not assembled  
61  
Not assembled  
62 -24,38  
7,1  
DC-123  
DC-123  
S11  
13,42 -21,8  
G16  
63 -24,38 15,4  
64 -24,38 18,6  
65 -24,38 21,8  
Not assembled  
Not assembled  
Not assembled  
Not assembled  
Not assembled  
G11  
8,38  
8,38  
2,6  
5,8  
S14  
G14  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
Not assembled  
Not assembled  
8,38  
8,38  
2,46  
2,46  
2,46  
2,46  
2,46  
18,6  
21,8  
-21,8  
-18,6  
-15,4  
-12,2  
-9  
S12  
G12  
S16  
Ph3  
Ph3  
Ph3  
Ph3  
Not assembled  
Not assembled  
0,03  
0,03  
0,03  
0,03  
0,03  
-8,5  
9
Ph1  
12,2  
15,4  
18,6  
21,8  
-21,8  
Ph1  
Ph1  
Ph1  
Ph1  
Ph3  
Not assembled  
Not assembled  
Not assembled  
44 -12,22  
-9  
Ph2  
45 -12,22 -5,8  
Ph2  
46  
Not assembled  
47 -12,22  
3,9  
Ph2  
Pad positions refers to center point. For more informations on pad design please see package data  
Copyright Vincotech  
14  
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11, T12, T13, T14,  
T15, T16  
IGBT  
1200 V  
75 A  
Inverter Switch  
D11, D12, D13, D14,  
D15, D16  
FWD  
PTC  
1200 V  
100 A  
Inverter Diode  
Thermistor  
Rt  
Copyright Vincotech  
15  
27 Aug. 2018 / Revision 2  
80-M2126PA075M7-K719F70  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 72  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.  
Package data  
Package data for MiniSkiiP® 2 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
80-M2126PA075M7-K719F70-D2-14  
27 Aug. 2018  
Thermal interface changed to HPTP.  
All  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
16  
27 Aug. 2018 / Revision 2  

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