80-M212WPA015M7-K757F7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;型号: | 80-M212WPA015M7-K757F7 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
文件: | 总27页 (文件大小:8987K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
80-M212WPA015M7-K757F70
datasheet
MiniSKiiP® PACK 2
1200 V / 15 A
Features
MiniSKiiP® 2 16 mm housing
● Twin sixpack configuration
● IGBT M7 with low VCEsat and improved EMC behavior
● Solderless spring contact mounting system
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 80-M212WPA015M7-K757F70
Copyright Vincotech
1
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch 2
VCES
Collector-emitter voltage
1200
21
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
79
W
V
VGES
±20
9,5
175
tSC
Short circuit ratings
VGE = 0 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
Inverter Diode 2
VRRM
Peak repetitive reverse voltage
1200
21
V
A
IF
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
I2t
65
A
Single Half Sine Wave,
tp = 10 ms
21
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
66
Tjmax
Maximum junction temperature
175
Inverter Switch
VCES
Collector-emitter voltage
1200
14
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
67
W
V
VGES
±20
9,5
175
tSC
Short circuit ratings
VGE = 0 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
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23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
25
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
200
200
58
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch 2
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0015
15
25
5,4
6
6,6
V
V
25
1,7
2,15
VCEsat
Collector-emitter saturation voltage
15
125
150
1,95
2,01
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
0
1200
0
25
25
60
µA
nA
Ω
500
None
2900
120
34
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
15
15
110
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
1,21
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
99,84
98,88
98,56
18,24
19,84
19,52
160,32
187,2
196,48
132,29
173,22
179,81
0,722
1,04
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
15
tf
125
150
25
ns
QrFWD=0,931 µC
QrFWD=1,95 µC
QrFWD=2,33 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,14
1,18
Eoff
125
150
1,73
1,81
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode 2
Static
25
2,6
2,71
2,77
60
VF
IR
Forward voltage
15
V
150
25
2,65
Reverse leakage current
Vr = 1200 V
µA
150
900
1800
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
1,44
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
13,36
15,91
17,02
171,98
380,09
402,2
0,931
1,95
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=766 A/µs
di/dt=707 A/µs
di/dt=713 A/µs
Qr
Recovered charge
±15
600
15
125
150
25
μC
2,33
0,342
0,803
0,965
472,56
300,4
261,5
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,001
10
25
5,4
6
6,6
V
V
25
1,66
1,9
2,15
VCEsat
Collector-emitter saturation voltage
15
125
150
1,96
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
0
1200
0
25
25
35
µA
nA
Ω
500
None
2000
86
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
23
VCC = 600 V
15
10
80
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
1,41
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
74,24
73,6
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
11,52
13,44
157,12
183,04
126,85
138,39
11,73
14,32
0,699
0,911
tr
125
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
600
10
tf
ns
125
25
QrFWD=25,13 µC
QrFWD=28,84 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inverter Diode
Static
25
1,12
1,03
1,02
1,5
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
1,2
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 499 Ω
100
3,2
3,3
5
mW
mW/K
K
d
25
1,3
B(25/50)
Tol. ±1 %
3380
Copyright Vincotech
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datasheet
Inverter Switch 2 Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
-2
10
5,0
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
2,5
-4
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,208
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,50E-02
8,43E-02
2,24E-01
6,47E-01
1,21E-01
8,10E-02
5,58E-03
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
6,42E-04
Copyright Vincotech
8
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Switch 2 Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
9
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Diode 2 Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,445
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,32E-02
1,25E-01
4,72E-01
4,73E-01
2,06E-01
1,06E-01
2,71E+00
3,62E-01
5,21E-02
1,60E-02
3,00E-03
3,17E-04
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10
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datasheet
Inverter Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
0,0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
1,409
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,86E-02
1,33E-01
5,83E-01
3,51E-01
1,57E-01
1,06E-01
1,46E+00
2,21E-01
4,32E-02
1,14E-02
2,77E-03
3,80E-04
Copyright Vincotech
11
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 13.
Rectifier
figure 14.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,199
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,23E-02
1,04E-01
5,86E-01
2,59E-01
1,36E-01
7,19E-02
2,73E+00
3,60E-01
4,98E-02
1,70E-02
3,63E-03
5,18E-04
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
Inverter Switching Characteristics 2
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eon
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
Ω
125 °C
150 °C
600
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,0
0,8
0,6
0,4
0,2
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
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datasheet
Inverter Switching Characteristics 2
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
tf
td(off)
tf
-1
10
-1
10
td(on)
tr
tr
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
16
°C
V
150
600
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
16
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Switching Characteristics 2
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
IRM
5,0
2,5
0,0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Switching Characteristics 2
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1200
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1000
800
600
400
200
0
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
18
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Switching Characteristics
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
35
30
25
20
15
10
5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
5,0
2,5
Eoff
Eoff
Eoff
Eoff
0
0,0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
Ω
125 °C
600
±15
10
V
V
A
125 °C
Rgon
Rgoff
16
figure 33.
Rectifier
figure 34.
Rectifier
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
10
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
8
6
4
2
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
600
±15
10
V
125 °C
V
A
Copyright Vincotech
19
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
tf
-1
10
tr
td(off)
tf
-1
10
td(on)
-2
10
tr
-2
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
600
±15
16
°C
V
125
600
±15
10
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 37.
Rectifier
figure 38.
Rectifier
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
600
±15
10
V
V
A
125 °C
Copyright Vincotech
20
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Switching Characteristics
figure 39.
Rectifier
figure 40.
Rectifier
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
60
50
40
30
20
10
0
35
30
25
20
15
10
5
Qr
Qr
Qr
Qr
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
600
±15
10
V
125 °C
V
A
figure 41.
Rectifier
figure 42.
Rectifier
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
45
40
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
600
±15
10
V
125 °C
V
A
Copyright Vincotech
21
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Inverter Switching Characteristics
figure 43.
Rectifier
figure 44.
Rectifier
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1200
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1000
800
600
400
200
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
600
±15
10
V
V
A
125 °C
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
22,5
)
IC MAX
20,0
17,5
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
22
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
23
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
24
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M212WPA015M7-K757F70-/0A/
80-M212WPA015M7-K757F70-/0B/
80-M212WPA015M7-K757F70-/1A/
80-M212WPA015M7-K757F70-/1B/
80-M212WPA015M7-K757F70-/3A/
80-M212WPA015M7-K757F70-/3B/
80-M212WPA015M7-K757F70-/4A/
80-M212WPA015M7-K757F70-/4B/
80-M212WPA015M7-K757F70-/5A/
80-M212WPA015M7-K757F70-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (3,4 W/mK, PSX-P7, silicone-free)
With thin lid (2.8mm height) + thermal grease (3,4 W/mK, PSX-P7, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+2
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
not assembled
0
0
0
9
24,38
-21,8
Se1
2
not assembled
12,2
15,4
DC-1
DC-1
3
24,38
24,38
24,38
24,38
-15,4
-12,2
G26
S26
4
not assembled
5
-9
0
21,8
G13
S12
Ph23
Ph23
6
-5,8
-8,5
-8,5
-8,5
-21,8
7
not assembled
12,2
-18,6
Ph11
Ph11
8
24,38
24,38
24,38
24,38
16,58
16,58
16,58
16,58
13,42
G25
-15,4
9
15,4
18,6
21,8
12,2
15,4
18,6
21,8
-21,8
DC-23
DC-23
Therm2
G23
not assembled
not assembled
-5,8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
-12,22
-12,22
-12,22
-12,22
-12,22
G11
G14
S14
0,7
3,9
DC-22
DC-22
Therm1
DC+2
7,1
Ph12
Ph12
10,3
not assembled
not assembled
21,8
not assembled
-15,4
13,42
13,42
13,42
13,42
G24
S24
-12,22
-24,38
G15
G12
-12,2
-21,8
-9
Ph22
Ph22
not assembled
not assembled
-5,8
not assembled
not assembled
12,2
-24,38
-24,38
-24,38
-12,2
-9
DC+1
DC+1
DC+1
8,38
8,38
8,38
G21
-5,8
15,4
18,6
DC-21
DC-21
not assembled
not assembled
not assembled
7,1
not assembled
2,46
-21,8
not assembled
-15,4
DC+2
-24,38
-24,38
-24,38
-24,38
G16
S16
15,4
2,46
2,46
2,46
G22
S22
18,6
Ph13
Ph13
-12,2
21,8
-9
Ph21
33
2,46
-5,8
Ph21
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
25
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Pinout
DC+2
1,16,28
DC+1
56,57,58
T22
T24
T26
T12
T14
T16
D21
D23
D25
D11
D13
D15
G12
53
G14
G16
G22
30
G24
G26
46
62
18
3
S12
40
S14
47
S16
63
S22
31
S24
19
S26
4
Ph21
Ph11
32,33
41,42
Ph22
Ph12
20,21
48,49
Ph23
5,6
Ph13
64,65
T21
T23
T25
T11
T13
T15
D22
D24
D26
D12
D14
D16
G21
24
G23
12
G25
8
G11
45
G13
39
G15
52
Rt
Se1
35
DC-21
25,26
DC-22
13,14
DC-23
9,10
DC-1
Therm1
15
Therm2
11
36,37
Identification
Component
Voltage
Current
Function
Comment
ID
T21, T22, T23, T24,
IGBT
1200 V
15 A
Inverter Switch 2
Inverter Diode 2
Inverter Switch
T25, T26
D21, D22, D23, D24,
D25, D26
FWD
IGBT
1200 V
1200 V
1600 V
15 A
10 A
18 A
T11, T12, T13, T14,
T15, T16
D11, D12, D13, D14,
D15, D16
Rectifier
Inverter Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
26
23 Apr. 2020 / Revision 1
80-M212WPA015M7-K757F70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 72
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M212WPA015M7-K757F70-D1-14
23 Apr. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
27
23 Apr. 2020 / Revision 1
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