80-M312PNB035M7-K937C7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M312PNB035M7-K937C7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总22页 (文件大小：7569K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M312PNB035M7-K937C70
datasheet
MiniSKiiP® PIM 3
1200 V / 35 A
Features
MiniSKiiP® 3 16 mm housing
● CI topology with splitted phase for switched reluctance
motor applications
● IGBT M7 with low VCEsat and improved EMC behavior
● Solder-free spring contact technology
● Built-in NTC
Schematic
Target applications
● Industrial Drives
Types
● 80-M312PNB035M7-K937C70
Copyright Vincotech
1
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
57
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
70
A
Ptot
129
±20
9,5
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
45
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
70
A
Ptot
89
W
°C
Tjmax
Maximum junction temperature
175
Inverter Sw. Prot. Diode
VRRM
Peak repetitive reverse voltage
1200
15
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
10
A
Ptot
41
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
49
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
66
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0035
35
25
5,4
6
6,6
V
V
25
1,47
1,64
1,68
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
0,08
0,5
mA
µA
Ω
20
None
7900
270
97
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
15
35
260
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,73
K/W
25
248,64
242,24
240,32
39,68
46,08
47,36
229,44
260,16
268,48
108,48
139,74
148,99
3,08
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
35
tf
125
150
25
ns
QrFWD=3,5 µC
QrFWD=5,65 µC
QrFWD=6,37 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
3,98
mWs
mWs
4,25
2,69
Eoff
125
150
3,72
4,08
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,66
1,76
1,75
2,1(1)
VF
IR
Forward voltage
35
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,06
K/W
25
28,05
30,1
IRRM
Peak recovery current
125
150
25
A
31,22
279,75
433,39
471,16
3,5
trr
Reverse recovery time
125
150
25
ns
di/dt=818 A/µs
di/dt=719 A/µs
di/dt=676 A/µs
Qr
Recovered charge
±15
600
35
125
150
25
5,65
μC
6,37
1,25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,17
mWs
A/µs
2,47
258,49
172,83
178,12
(dirf/dt)max
125
150
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inverter Sw. Prot. Diode
Static
25
1,57
1,65
1,65
2,1(1)
VF
Forward voltage
5
125
150
V
IR
Reverse leakage current
Thermal
Vr = 1200 V
25
20
µA
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,31
K/W
Rectifier Diode
Static
25
1,15
1,11
1,5(1)
VF
IR
Forward voltage
28
V
125
25
100
Reverse leakage current
Vr = 1600 V
µA
150
1000
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,06
K/W
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,734
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,86E-02
1,00E-01
3,87E-01
1,44E-01
5,43E-02
2,88E+00
4,81E-01
7,10E-02
1,25E-02
1,05E-03
Copyright Vincotech
8
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
100µs
10
1
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,064
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,06E-02
2,37E-01
4,33E-01
2,08E-01
1,26E-01
1,82E+00
1,58E-01
3,97E-02
7,61E-03
6,66E-04
Copyright Vincotech
10
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Sw. Prot. Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
15,0
12,5
10,0
7,5
10
0
10
-1
5,0
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
2,5
-2
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,313
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,03E-01
4,16E-01
7,17E-01
6,03E-01
4,75E-01
1,46E+00
7,07E-02
9,80E-03
1,47E-03
2,69E-04
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Rectifier Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,064
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,96E-02
7,42E-02
1,97E-01
5,70E-01
1,06E-01
7,14E-02
4,92E-03
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
6,42E-04
Copyright Vincotech
12
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
13
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
12,5
10,0
7,5
10
Eon
Eon
Eon
Eon
8
Eon
Eon
6
Eoff
Eoff
Eoff
Eoff
5,0
4
Eoff
Eoff
2,5
2
0,0
0
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
Ω
Ω
16
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
tr
tf
tf
-1
10
-1
10
tr
-2
10
-2
10
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
16
°C
150
600
±15
35
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
16
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
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08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1200
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1000
800
600
400
200
0
0
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
16
Ω
Ω
Copyright Vincotech
17
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
18
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Inverter Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
19
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M312PNB035M7-K937C70-/0A/
80-M312PNB035M7-K937C70-/0B/
80-M312PNB035M7-K937C70-/1A/
80-M312PNB035M7-K937C70-/1B/
80-M312PNB035M7-K937C70-/4A/
80-M312PNB035M7-K937C70-/4B/
80-M312PNB035M7-K937C70-/5A/
80-M312PNB035M7-K937C70-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
S16
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
not assembled
8,7
15,83
15,83
15,83
-25,3
-6,4
-3,2
-29,18
-32,82
Ph12
Ph12
2
Ph31
not assembled
8,7
3
Ph31
4
not assembled
3,2
not assembled
22,1
5
15,83
15,83
Ph32
Ph32
-35,68
-35,68
S11
G11
6
6,4
25,3
7
not assembled
not assembled
not assembled
not assembled
-15,7
8
9
15,83
15,83
8,13
22,1
25,3
Therm2
Therm1
G16
-36,58
-36,58
-36,58
-36,58
G12
S12
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
-12,5
-25,3
-9,3
Ph11
Ph11
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
-5,79
-6,1
not assembled
not assembled
not assembled
not assembled
-40,22
-25,3
DC+Rect
1,82
0,43
0,43
Ph21
S15
not assembled
not assembled
not assembled
not assembled
not assembled
22,1
25,3
G15
not assembled
not assembled
-12,18
-1,82
-1,82
-1,82
G14
S14
-50,18
-25,3
DC+Rect
-8,98
not assembled
not assembled
-5,79
Ph21
not assembled
-50,18
-50,18
-50,18
-15,7
ACin1
-7,27
-7,27
22,1
25,3
22,1
25,3
DC-Inv
DC-Inv
S13
not assembled
-6,3
ACin2
-14,97
-14,97
not assembled
G13
9,5
ACin3
-16,05 -15,02
DC+Inv
not assembled
not assembled
-50,18
-53,82
25,3
DC-Rect
DC+Rect
not assembled
not assembled
-25,3
not assembled
not assembled
-19,22
-19,7
-25,3
DC+Inv
DC+Inv
-15,02
-53,82
-53,82
-15,7
ACin1
not assembled
not assembled
not assembled
-1
not assembled
-6,3
ACin2
not assembled
not assembled
-22,26
-22,26
Ph22
Ph22
2,2
-53,82
-53,82
-53,82
9,5
ACin3
not assembled
22,1
25,3
DC-Rect
DC-Rect
-22,67
25,3
DC-Inv
not assembled
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
20
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Pinout
DC+Rect
62,68,78
DC+INV
31,35,36
T16
T12
T14
D15
D11
D13
D46
D42
D44
G12
54
D32
D34
D36
G14
23
G16
11
S12
55
S16
1
S14
24
ACIn1
71,81
Ph31
2,3
Ph11
Ph21
ACIn2
73,83
56,57
18,25
Ph32
5,6
Ph12
46,48
Ph22
40,41
ACIn3
75,86
D31
D33
D35
T15
T11
T13
D16
D12
D14
D45
D41
D43
G15
20
G11
51
G13
30
S11
50
S13
29
S15
19
Rt
DC-INV
27,28,43
DC-Rect
77,87,88
Therm1
10
Therm2
9
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
35 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
FWD
1200 V
1200 V
1600 V
35 A
5 A
D41, D42, D43, D44,
D45, D46
Inverter Sw. Prot. Diode
D31, D32, D33, D34,
D35, D36
Rectifier
28 A
Rectifier Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
21
08 Mar. 2021 / Revision 1
80-M312PNB035M7-K937C70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M312PNB035M7-K937C70-D1-14
8 Mar. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
08 Mar. 2021 / Revision 1
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