A0-VP122PA200M7-L756F70T [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | A0-VP122PA200M7-L756F70T |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总16页 (文件大小：2960K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
VINcoDUAL E3
1200 V / 200 A
Features
VINco E3 housing
● IGBT Mitsubishi gen 7 technology with low VCEsat
and improved EMC behavior
● New SoLid Cover Technology for higher reliability
● Industry standard housing
● Press-fit pin and pre-applied phase-change
● Thermal Interface Material available
Schematic
Target applications
● Industrial Drives
● Power Supply
● UPS
Types
● A0-VS122PA200M7-L756F70
● A0-VP122PA200M7-L756F70T
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
231
400
449
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
1
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
182
400
343
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
18,1
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
mm
mm
Clearance
16,2
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
2
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,02
200
25
5,4
6
6,6
V
V
25
1,53
1,70
1,75
1,85
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
Cies
Coes
Cres
Qg
Collector-emitter cut-off current
Gate-emitter leakage current
Input capacitance
0
1200
0
25
25
200
µA
nA
20
1000
42000
1400
560
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
200
1400
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,21
K/W
Dynamic
25
353
353
350
Turn-on delay time
td(on)
125
150
25
48
Rise time
tr
125
150
25
55
57
293
Rgon = 4 Ω
Rgoff = 4 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
324
326
61
97
±15
600
200
tf
110
15,915
21,048
23,273
12,400
Qr
FWD
Qr
FWD
Qr
FWD
= 21,9 μC
= 31,1 μC
= 35,2 μC
Turn-on energy (per pulse)
Eon
mWs
Eoff
Turn-off energy (per pulse)
125
150
16,874
18,546
Copyright Vincotech
3
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Diode
Static
25
1,82
1,96
1,97
2,1
80
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,28
K/W
Dynamic
25
151
164
169
IRRM
125
150
25
Peak recovery current
A
383
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
439
471
ns
di/dt = 3709 A/μs
di/dt = 3860 A/μs
di/dt = 3690 A/μs
21,860
31,146
35,186
8,262
11,802
13,432
880
±15
600
200
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
848
995
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 493 Ω
-5
+5
245
1,4
mW
mW/K
K
B(25/50) Tol. ±2 %
B(25/100) Tol. ±2 %
3375
3437
B-value
K
Vincotech NTC Reference
K
Copyright Vincotech
4
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
600
600
VGE
:
7
8
9
V
V
V
I
I
500
500
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
400
300
200
100
0
400
300
200
100
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
200
I
Z
150
10-1
100
50
0.5
10-2
0.2
0.1
0.05
0.02
0.01
0.005
0
10-3
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
250
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,21
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,33E-02
3,66E-02
6,73E-02
7,56E-02
8,67E-03
6,08E+00
1,45E+00
1,71E-01
3,15E-02
2,71E-03
Copyright Vincotech
5
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
1000
100ms
1ms
10µs
10ms
100µs
DC
I
100
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
single pulse
80
D =
Ts
=
ºC
VGE
=
0
V
Tj =
Tjmax
Copyright Vincotech
6
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
600
500
400
300
200
100
0
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,28
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
1,27E-02
3,22E-02
6,57E-02
1,32E-01
3,46E-02
1,04E+01
1,79E+00
2,21E-01
3,76E-02
6,33E-03
Thermistor Characteristics
figure 1.
Typical NTC characteristic
Thermistor
Typical Thermistor resistance values
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
5000
4000
3000
2000
1000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
80
80
E
E
Eon
Eon
60
60
Eon
Eon
Eon
40
20
0
40
20
0
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
100
200
300
25 °C
400
IC (A)
0
5
10
15
25 °C
20
Rg (Ω)
Tj:
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
4
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
600
±15
200
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
20
20
E
E
Erec
Erec
16
15
12
8
Erec
10
5
Erec
Erec
Erec
4
0
0
0
5
10
15
20
0
100
200
300
400
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
200
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
8
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
10
10
t
t
td(on)
td(off)
1
1
td(on)
td(off)
tr
tr
0,1
0,1
tf
tf
0,01
0,01
0
5
10
15
20
0
100
200
300
400
IC (A)
Rg (Ω)
With an inductive load at
With an inductive load at
Tj =
150
600
±15
4
°C
V
Tj =
150
600
±15
200
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,8
1
t
t
trr
trr
0,8
trr
trr
0,6
0,6
0,4
0,2
trr
trr
0,4
0,2
0
0
0
0
100
200
300
25 °C
400
5
10
15
25 °C
20
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
600
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
200
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
9
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
50
50
Qr
Qr
Q
Q
40
40
Qr
Qr
30
20
10
0
30
20
10
Qr
Qr
0
0
0
100
200
300
25 °C
400
5
10
15
25 °C
20
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
600
±15
4
V
V
Ω
Tj:
VCE=
VGE =
I C=
600
±15
200
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
200
500
IRM
IRM
IRM
I
I
400
150
300
200
100
100
50
IRM
IRM
IRM
0
0
0
0
5
10
15
25 °C
20
Rgo n (Ω)
100
200
300
25 °C
400
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
600
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
200
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
10
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
25000
6000
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
5000
20000
4000
3000
2000
1000
15000
10000
5000
0
0
0
0
5
10
15
20
Rgon (Ω)
100
200
300
25 °C
400
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
600
±15
4
V
V
Ω
Tj:
VCE =
VGE =
I C=
600
±15
200
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
450
IC MAX
I
400
I
350
300
250
200
150
100
50
I
V
0
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj =
150
°C
Ω
R gon
R goff
=
=
4
4
Ω
Copyright Vincotech
11
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Switching Definitions
General conditions
T j
=
=
=
150 °C
Rgon
Rgoff
4 Ω
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
200
326
V
600
200
350
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
600
200
110
V
VC (100%) =
I C (100%) =
600
200
57
V
A
A
ns
tr
=
ns
Copyright Vincotech
12
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Half-Bridge Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
600
200
169
471
V
I F (100%) =
Q r (100%) =
200
35
A
A
μC
A
trr
=
ns
Copyright Vincotech
13
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste with solder pins
with thermal paste with solder pins
without thermal paste with Press-fit pins
with thermal paste with Press-fit pins
A0-VS122PA200M7-L756F70
A0-VS122PA200M7-L756F70-/3/
A0-VP122PA200M7-L756F70T
A0-VP122PA200M7-L756F70T-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
Functions
Therm1
7,24
-0,45
1
2
11,06 -0,45
60,58 -0,45
Therm2
G12
S12
C12
Ph
3
4
64,4
-0,45
5
87,26 -0,45
6
-
-
-
-
7
Ph
8
37,72 57,95
33,92 57,95
G11
S11
DC-
DC+
9
10
11
-
-
-
-
Copyright Vincotech
14
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
1200 V
200 A
200 A
Half-Bridge Switch
Half-Bridge Diode
Thermistor
D11, D12
Rt
FWD
NTC
1200 V
Copyright Vincotech
15
08 May. 2019 / Revision 1
A0-VS122PA200M7-L756F70
A0-VP122PA200M7-L756F70T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 24
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco E3 packages see vincotech.com website.
Package data
Package data for VINco E3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
A0-Vx122PA200M7-L756F70x-D1-14
08 May. 2019
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
08 May. 2019 / Revision 1
相关型号：
A0-VP122PA300M7-L757F70T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VP122PA450M7-L758F70T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VP122PA600M7-L759F70T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VP122PA690M7-L750F70T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VP126PA100M7-L997F70T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VP126PA150M7-L998F70T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VP126PA200M7-L999F70T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VS122PA200M7-L756F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VS122PA300M7-L757F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VS122PA450M7-L758F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
A0-VS122PA600M7-L759F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
©2020 ICPDF网 联系我们和版权申明