A0-VP126PA200M7-L999F70T [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;型号: | A0-VP126PA200M7-L999F70T |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
文件: | 总18页 (文件大小:6504K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A0-VP126PA200M7-L999F70T
datasheet
VINcoPACK E3
1200 V / 200 A
Features
VINco E3 17 mm housing
● IGBT Mitsubishi gen 7 technology with low VCesat
and improved EMC behavior
● New SoLid Cover Technology for higher reliability
● Industry standard housing
● Press-fit pin and pre-applied phase-change
Thermal Interface Material available
Schematic
Target applications
Industrial Drives
Types
● A0-VP126PA200M7-L999F70T
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
173
400
318
±20
9,5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
137
400
235
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,02
200
25
5,4
6
6,6
V
V
25
1,69
1,88
1,93
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
2
Cies
Coes
Cres
Qg
37000
1100
420
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
15
200
1200
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,3
K/W
25
283,2
300
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
305,6
47,4
tr
125
150
25
58,6
61
Rgon = 1 Ω
Rgoff = 1 Ω
232,8
263,4
273,2
76,7
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
200
tf
125
150
25
94,25
96,24
16,28
22,83
25,08
13,25
17,54
18,99
ns
QrFWD=21,43 µC
QrFWD=31,96 µC
QrFWD=36,25 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,86
1,99
1,98
2,1(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,4
K/W
25
166,92
163,7
164,58
309,66
479,84
520,58
21,43
31,96
36,25
8,05
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=4313 A/µs
di/dt=4301 A/µs
di/dt=3318 A/µs
Qr
Recovered charge
±15
600
200
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
12,25
13,92
1395
mWs
A/µs
(dirf/dt)max
125
150
924,44
854,82
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
200
10
-1
150
100
50
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,298
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,88E-02
6,08E-02
8,17E-02
9,49E-02
1,90E-02
1,33E-02
5,48E+00
1,14E+00
2,27E-01
4,76E-02
1,06E-02
4,72E-04
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,405
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,18E-02
7,39E-02
1,19E-01
1,51E-01
1,42E-02
2,45E-02
6,58E+00
1,24E+00
1,47E-01
3,00E-02
4,40E-03
4,95E-04
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
50
100
150
200
250
300
350
400
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
1
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Erec
Erec
Erec
Erec
Erec
Erec
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
50
100
150
200
250
300
350
400
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
10
26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
td(off)
td(on)
td(off)
0
10
-1
10
tr
tf
tr
-1
10
tf
-2
10
-2
10
0
50
100
150
200
250
300
350
400
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
1
°C
V
150
600
±15
200
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
1
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
400
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
11
26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
60
50
40
30
20
10
0
45
40
35
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0,0
0
50
100
150
200
250
300
350
400
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
200
175
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
50
100
150
200
250
300
350
400
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
12
26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
6000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
50
100
150
200
250
300
350
400
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
1
1
Ω
Copyright Vincotech
13
26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Inverter Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
A0-VP126PA200M7-L999F70T
A0-VP126PA200M7-L999F70T-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
VIN
Date code
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
VIN
WWYY
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
0
0
0
0
0
0
0
0
0
0
Function
G12
19,05
22,86
34,29
38,1
2
S12
3
G11
4
S11
5
49,53
53,34
64,77
68,58
80,01
83,82
95,25
99,06
G14
6
S14
7
G13
8
S13
9
G16
10
11
12
13
14
15
16
17
18
S16
G15
S15
118,11 15,865
118,11 19,675
118,11 23,485
118,11 34,915
118,11 38,725
118,11 42,535
DC-123
DC-123
DC-123
DC+123
DC+123
DC+123
Therm1
Therm2
Ph3
19 100,965
58,4
58,4
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
97,155
81,915
78,105
74,295
59,055
55,245
51,435
36,195
32,385
28,575
0
58,4
58,4
Ph3
58,4
Ph3
58,4
Ph2
58,4
Ph2
58,4
Ph2
58,4
Ph1
58,4
Ph1
58,4
Ph1
42,535
38,725
34,915
23,485
19,675
15,865
DC+123
DC+123
DC+123
DC-123
DC-123
DC-123
0
0
0
0
0
Copyright Vincotech
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26 Sep. 2021 / Revision 2
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datasheet
Pinout
DC+123
16,17,18,30,31,32
T12
D11
T14
T16
D13
D15
G12
1
G14
G16
9
5
S12
2
S14
6
S16
10
Ph1
27,28,29
Ph2
24,25,26
Ph3
21,22,23
T11
T13
T15
D12
D14
D16
G11
3
G13
7
G15
11
S11
4
S13
8
S15
12
Rt
DC-123
13,14,15,33,34,35
Therm1
20
Therm2
19
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
200 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
NTC
1200 V
200 A
Inverter Diode
Thermistor
Rt
Copyright Vincotech
17
26 Sep. 2021 / Revision 2
A0-VP126PA200M7-L999F70T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 24
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco E3 packages see vincotech.com website.
Package data
Package data for VINco E3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Thermal characteristics are updated
Separated datasheet for press-fit version
New datasheet format, module is unchanged
A0-VP126PA200M7-L999F70T-D2-14
26 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
26 Sep. 2021 / Revision 2
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