V23990-K233-F-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-K233-F-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总15页 (文件大小：1175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K233-F-PM
datasheet
MiniSKiiP® 2 PACK
Features
600 V / 75 A
MiniSKiiP® 2 housing
● SixPack (inverter) topology
● Solder less interconnection
● Designed for motor drives up to 7 kW
● Fully compatible with Semikron pedant 27AC066V1
● Temperature sensor
● Standard (6,5mm) and thin (2,8mm) lids, 16 mm housing
● Optional with pre-applied thermal grease
Schematic
Target Applications
● Industrial Motor Drives
● Power Generation
● UPS
Types
● V23990-K233-F-PM
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Switch
V CE
I C
Collector-emitter break down voltage
600
70
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC collector current
I CRM
P tot
V GE
t p limited by T jmax
T j = T jmax
Repetitive peak collector current
Power dissipation
225
127
±20
A
W
V
Gate-emitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
6
µs
V
360
T jmax
Maximum Junction Temperature
175
°C
Inverter Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
59
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
118
78
A
W
°C
T jmax
Maximum Junction Temperature
175
copyright Vincotech
1
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Thermal Properties
T stg
T op
Storage temperature
-40…+125
°C
°C
-40…+(T jmax - 25)
Operation temperature under switching condition
Insulation Properties
DC Test Voltage*
t p = 2 s
5500
2500
V
V
V isol
Insulation voltage
AC Voltage
With std lid
t p = 1 min
Creepage distance
Clearance
6,3
6,3
mm
mm
for more information see handling instructions
With std lid
for more information see handling instructions
Comparative Tracking Index
*100% tested in production
CTI
>200
copyright Vincotech
2
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A]
V GS [V]
T j [°C]
Min
Max
V DS [V] I D [A]
Inverter Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,0012
75
25
5
5,8
6,5
V
V
25
125
1,54
1,76
15
0
612
0
25
25
0,2
mA
nA
Ω
20
700
4
25
125
25
125
25
125
25
125
25
125
25
215
222
26
Rise time
30
ns
255
274
45
t d(off)
t f
Turn-off delay time
R goff = 8 Ω
R gon = 8 Ω
±15
300
75
Fall time
92
1,82
2,42
1,72
2,22
E on
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
E off
125
C ies
4700
300
C oss
C rss
Output capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
145
λ paste = 0,8 W/mK
(P12)
R th(j-s)
Thermal resistance chip to heatsink
0,75
K/W
Inverter Diode
25
125
25
125
25
125
25
125
25
125
25
1,39
1,43
72
82
203
V F
I RRM
Diode forward voltage
75
75
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
333
5,70
9,14
2458
1983
1,15
1,93
Q rr
R goff = 8 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
300
µC
( di rf/dt )max
E rec
A/µs
mWs
125
λ paste = 0,8 W/mK
(P12)
R th(j-s)
Thermal resistance chip to heatsink
1,2
K/W
Thermistor
Rated resistance
Deviation of R 100
R100
R
25
1000
Ω
%
Δ R/R
R 100 = 1670 Ω
100
100
25
-3
3
E
P
1670
Ω
7,635*10-3
1,731*10-5
B (25/50)
B (25/100)
A-value
Tol. %
Tol. %
1/K
1/K²
B-value
25
Vincotech NTC Reference
copyright Vincotech
3
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Output Inverter
figure 1.
Typical output characteristics
IGBT
figure 2.
Typical output characteristics
IGBT
I C = f(V CE
)
I C = f(V CE)
200
200
160
120
80
160
120
80
40
40
0
0
0
0
V
CE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
t p
=
t p =
250
25
μs
°C
250
125
μs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
75
200
60
45
30
15
160
Tj = Tjmax-25°C
120
Tj = 25°C
80
40
0
Tj = Tjmax-25°C
Tj = 25°C
0
0
VGE (V)
VF (V)
3,0
2
4
6
8
10
12
0,0
0,5
1,0
1,5
2,0
2,5
At
At
T j =
°C
μs
V
25/125
250
t p
=
t p
=
250
μs
V CE
=
10
copyright Vincotech
4
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Output Inverter
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T
I C (A)
R G ( Ω )
0
30
60
90
120
150
0
8
16
24
32
40
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/125
300
±15
8
25/125
300
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
75
V
=
I C =
Ω
Ω
A
=
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
3,0
3,0
Erec
Tj = Tjmax -25°C
2,5
2,5
2,0
1,5
2,0
Tj = Tjmax -25°C
Erec
1,5
Erec
Tj = 25°C
1,0
0,5
0,0
1,0
Erec
Tj = 25°C
0,5
0,0
I
C (A)
R G ( Ω )
0
30
60
90
120
150
0
8
16
24
32
40
With an inductive load at
With an inductive load at
T j =
T j =
25/125
300
±15
8
°C
V
25/125
300
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
V
±15
75
V
=
I C =
Ω
A
copyright Vincotech
5
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Output Inverter
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdoff
tdon
tdoff
tdon
0,1
0,1
tr
tf
tr
tf
0,01
0,01
0,001
0,001
I
C (A)
R
G ( Ω )
0
30
60
90
120
150
0
8
16
24
32
40
With an inductive load at
With an inductive load at
T j =
T j =
125
300
±15
8
°C
V
125
300
±15
75
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
8
figure 11.
FWD
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
t rr = f(R gon
)
0,6
0,6
0,5
0,5
0,4
0,3
0,2
0,1
trr
trr
Tj = Tjmax -25°C
0,4
Tj = Tjmax -25°C
trr
trr
0,3
0,2
Tj = 25°C
Tj = 25°C
0,1
0,0
0
0,0
I
C (A)
R gon ( Ω )
8
16
24
32
40
0
30
60
90
120
150
At
At
T j =
T j =
V R =
I F =
25/125
300
±15
8
°C
V
25/125
°C
V
V CE
V GE
R gon
=
300
75
=
V
A
=
V GE =
Ω
±15
V
copyright Vincotech
6
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Output Inverter
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
15
10
Qrr
Qrr
Tj = Tjmax -25°C
12
8
6
4
2
Tj = Tjmax -25°C
9
Qrr
Qrr
Tj = 25°C
6
Tj = 25°C
3
0
0
0
I
C (A)
R gon ( Ω)
0
30
60
90
120
150
8
16
24
32
40
At
At
T j =
T j =
V R =
I F =
25/125
300
±15
8
°C
V
25/125
300
°C
V
V CE
V GE
R gon
=
=
V
75
A
=
V GE =
Ω
±15
V
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
150
100
IRRM
IRRM
Tj = Tjmax -25°C
120
90
80
Tj = 25°C
60
Tj = Tjmax - 25°C
60
40
20
0
IRRM
IRRM
Tj = 25°C
30
0
0
I C (A)
R gon ( Ω )
40
8
16
24
32
0
30
60
90
120
150
At
At
T j =
T j =
V R =
I F =
25/125
300
±15
8
°C
V
25/125
300
°C
V CE
V GE
=
=
V
A
V
V
75
R gon
=
V GE =
Ω
±15
copyright Vincotech
7
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Output Inverter
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
4000
6000
µ
µ
µ
µ
dI0/dt
dI0/dt
dIrec/dt
dIrec/dt
3200
2400
1600
800
0
dIo/dtLow T
4500
3000
1500
0
Tj = 25°C
di0/dtHigh T
Tj = Tjmax - 25°C
dIrec/dtLow T
dIrec/dtHigh T
dIrec/dtHigh T
I
C (A)
R gon ( Ω )
0
30
60
90
120
150
0
8
16
24
32
40
At
T j =
At
T j =
V R =
I F =
25/125
300
±15
8
°C
V
25/125
°C
V
V CE
V GE
R gon
=
300
75
=
V
A
=
V GE =
Ω
±15
V
figure 19.
IGBT
figure 20.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
100
101
100
10-1
D = 0,5
0,2
D = 0,5
0,2
0,1
0,05
0,02
0,01
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,005
0,000
10-2
10-5
10-2
102
101
102
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
At
At
t
p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
0,75
K/W
1,21
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
2,52E-02 8,15E+00
1,46E-01 9,38E-01
3,96E-01 1,88E-01
1,14E-01 3,57E-02
4,05E-02 6,16E-03
2,47E-02 3,71E-04
R (K/W) Tau (s)
2,29E-02 9,22E+00
1,66E-01 1,07E+00
5,46E-01 2,04E-01
2,82E-01 4,28E-02
1,25E-01 7,24E-03
6,92E-02 6,71E-04
copyright Vincotech
8
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Output Inverter
figure 21.
IGBT
figure 22.
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
V GE = f(Q g)
103
15
120 V
10uS
12
9
102
100uS
480 V
100mS
10mS
1mS
DC
101
6
100
3
0
10-1
100
0
60
120
180
240
Q g (nC)
103
101
102
VCE (V)
At
At
D =
single pulse
I C
=
75
A
T s =
80
ºC
V
V GE
=
±15
T jmax
T j =
Thermistor
figure 1.
Thermistor
Typical PTC characteristic
as a function of temperature
R T = f(T )
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
25
50
75
100
125
T (°C)
copyright Vincotech
9
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Switching Definitions Output Inverter
General conditions
T j
=
=
=
125 °C
8 Ω
8 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
210
%
140
%
IC
180
150
120
100
80
tdoff
VCE
VCE 90%
VGE 90%
120
90
60
30
0
VCE
IC
60
VGE
tdon
40
tEoff
IC 1%
20
IC10%
VGE10%
VCE 3%
VGE
0
tEon
3,1
-20
-30
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
0,85
time (us)
2,5
2,65
2,8
2,95
3,25
3,4
time(us)
V GE (0%) =
-15
15
V
V GE (0%) =
-15
15
V
V
V
A
V GE (100%) =
V C (100%) =
I C (100%) =
V
V GE (100%) =
V C (100%) =
I C (100%) =
300
75
V
300
75
A
t doff
=
=
0,27
0,55
μs
μs
t don
=
=
0,22
0,49
μs
μs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
140
210
%
%
Ic
120
180
150
fitted
VCE
IC
100
IC 90%
80
120
VCE
IC
IC90%
60%
60
90
tr
IC 40%
40
20
0
60
30
IC10%
IC10%
tf
0
-30
-20
2,85
2,91
2,97
3,03
3,09
3,15
0,15
0,2
0,25
0,3
0,35
0,4
0,45
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
300
75
V
V C (100%) =
I C (100%) =
t r =
300
75
V
A
A
0,09
μs
0,03
μs
copyright Vincotech
10
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Switching Definitions Output Inverter
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
120
150
%
%
Pon
Eoff
Poff
100
80
120
Eon
90
60
30
0
60
40
20
VGE 10%
VCE
VGE 90%
3%
0
tEoff
IC 1%
0,64
tEon
3,05
-30
-20
2,6
2,75
2,9
3,2
3,35
3,5
-0,2
-0,06
0,08
0,22
0,36
0,5
time (us)
time(us)
P off (100%) =
E off (100%) =
22,36
2,22
0,55
kW
P on (100%) =
E on (100%) =
22,36
2,42
0,49
kW
mJ
μs
mJ
μs
t E off
=
t E on =
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
120
%
Id
80
trr
40
fitted
0
-40
Vd
IRRM10%
-80
IRRM90%
IRRM100%
-120
-160
2,9
3
3,1
3,2
3,3
3,4
time(us)
V d (100%) =
I d (100%) =
300
75
V
A
I RRM (100%) =
82
A
t rr
=
0,33
μs
copyright Vincotech
11
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Switching Definitions Output Inverter
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of t Qrr
Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr
)
(t Erec= integrating time for E rec)
150
120
Erec
%
%
Qrr
100
90
60
30
0
Id
50
tQrr
tErec
0
-50
Prec
-100
-150
-30
2,7
2,9
3,1
3,3
3,5
3,7
3,9
2,7
2,9
3,1
3,3
3,5
3,7
3,9
time(us)
time(us)
I d (100%) =
Q rr (100%) =
75
A
P rec (100%) =
E rec (100%) =
22,36
1,93
0,56
kW
mJ
μs
9,14
0,56
μC
μs
t Q rr
=
t E rec =
copyright Vincotech
12
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Ordering Code & Marking
Version
With std lid (6,5 mm height) + no thermal grease
With thin lid (2,8 mm height) + no thermal grease
Ordering Code
V23990-K233-F-PM-/0A/
V23990-K233-F-PM-/0B/
V23990-K233-F-PM-/1A/
V23990-K233-F-PM-/1B/
V23990-K233-F-PM-/4A/
V23990-K233-F-PM-/4B/
V23990-K233-F-PM-/5A/
V23990-K233-F-PM-/5B/
With std lid (6,5 mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2,8 mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6,5 mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2,8 mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6,5 mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2,8 mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
VIN
Date code
Name&Ver
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
VIN
WWYY
NNNNNNVV
UL
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
1
X
Y
Function
+DC
Pin
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
X
Y
Function
24,38
24,38
24,38
24,38
24,38
-21,8
-18,6
-15,4
-12,2
-9
Not assembled
2
+DC
0,03
0,03
0,03
0,03
0,03
-8,5
9
U
U
U
U
U
W
3
+DC
12,2
15,4
4
+DC
5
+DC
18,6
6
Not assembled
Not assembled
12,2
21,8
7
-21,8
8
24,38
24,38
+T
-T
Not assembled
Not assembled
Not assembled
-9
9
Not assembled
Not assembled
21,8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
-12,22
-12,22
V
V
Not assembled
Not assembled
Not assembled
Not assembled
-21,8
-5,8
Not assembled
3,9
-12,22
-12,22
-12,22
V
V
V
7,1
13,42
G5
10,3
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
2,6
Not assembled
Not assembled
Not assembled
-21,8
-24,38
-24,38
-24,38
-24,38
-24,38
-24,38
G6
E6
-18,6
8,38
8,38
E3
-15,4
-DC
-DC
-DC
E4
5,8
G3
-12,2
Not assembled
Not assembled
-9
-5,8
8,38
8,38
2,46
2,46
2,46
2,46
2,46
18,6
21,8
E1
G1
E5
W
Not assembled
0,7
-24,38
G4
-21,8
Not assembled
7,1
-18,6
-24,38
-24,38
-24,38
-24,38
-DC
-DC
E2
-15,4
W
15,4
-12,2
W
18,6
-9
W
21,8
G2
Not assembled
Pad positions refers to center point. For more informations on pad design please see package data
copyright Vincotech
13
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1,T2,T3,T4,T5,T6
D1,D2,D3,D4,D5,D6
PTC1
IGBT
FWD
PTC
600 V
600 V
75 A
75 A
Inverter Switch
Inverter Diode
Thermistor
copyright Vincotech
14
06 Feb. 2018 / Revision 4
V23990-K233-F-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
72
Handling instructions for MiniSkiiP ® 2 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-K233-F-D4-14
06 Feb. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
15
06 Feb. 2018 / Revision 4
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