V23990-P589-C418-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P589-C418-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总20页 (文件大小：7553K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P589-C418-PM
datasheet
flowPIM 1
1200 V / 25 A
Features
flow 1 12 mm housing
● Three-phase rectifier, optional BRC, Inverter, NTC
● Very compact housing, easy to route
● IGBT4 / EmCon4 technology for low saturation
losses and improved EMC behavior
Schematic
Target applications
● Industrial drives
● Embedded Drives
Types
● V23990-P589-C418-PM
Copyright Vincotech
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22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
34
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
75
A
Ptot
99
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
29
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
50
A
Ptot
60
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
46
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
56
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
7,91
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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V23990-P589-C418-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00085 25
5,3
5,8
6,3
V
25
25
1,58
1,87
2,31
2,07(1)
15
0
V
150
1200
0
25
25
2,4
µA
nA
Ω
20
120
None
1450
50
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
200
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,96
K/W
25
126,2
126,4
21,4
28
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
tr
150
25
Rgon = 32 Ω
Rgoff = 32 Ω
220,2
284
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
25
74,2
99,96
1,64
2,53
1,38
2,17
tf
ns
150
25
QrFWD=2,5 µC
QrFWD=4,8 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
150
Copyright Vincotech
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V23990-P589-C418-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,35
1,97
1,94
2,05(1)
5,2
VF
IR
Forward voltage
25
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,59
K/W
25
32,16
33,88
265,26
435,54
2,5
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
trr
ns
150
25
di/dt=1408 A/µs
di/dt=1098 A/µs
Qr
±15
600
25
μC
150
25
4,8
0,98
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
1,94
1722
579,94
(dirf/dt)max
150
Rectifier Diode
Static
25
0,988
0,899
1,21(1)
1,1(1)
VF
IR
Forward voltage
13
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,25
K/W
Copyright Vincotech
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V23990-P589-C418-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1486 Ω
100
-12
14
200
2
mW
mW/K
K
d
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3950
3998
B(25/100)
B-value
K
Vincotech Thermistor Reference
B
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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V23990-P589-C418-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
70
70
VGE
:
7 V
8 V
60
50
40
30
20
10
60
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
V
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
25
10
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,964
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,34E-02
3,42E-01
3,61E-01
1,15E-01
5,33E-02
8,35E-01
1,19E-01
4,14E-02
7,70E-03
9,80E-04
Copyright Vincotech
7
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
100µs
10
1
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,594
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,80E-02
3,11E-01
6,92E-01
2,79E-01
9,99E-02
1,35E-01
2,61E+00
2,04E-01
4,64E-02
8,74E-03
1,79E-03
3,39E-04
Copyright Vincotech
9
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Rectifier Diode Characteristics
figure 8.
Rectifier
figure 9.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,254
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
8,00E-02
1,56E-01
6,95E-01
2,23E-01
9,97E-02
5,22E+00
4,18E-01
8,82E-02
3,07E-02
5,99E-03
Copyright Vincotech
10
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Thermistor Characteristics
figure 10.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
11
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Inverter Switching Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eon
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
0
10
20
30
40
50
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
Ω
150 °C
600
±15
25
V
V
A
150 °C
Rgon
Rgoff
32
figure 13.
FWD
figure 14.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
0
10
20
30
40
50
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
25
V
V
A
150 °C
Copyright Vincotech
12
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Inverter Switching Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
0
10
20
30
40
50
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
32
°C
V
150
600
±15
25
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 17.
FWD
figure 18.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
1,50
1,25
1,00
0,75
0,50
0,25
0,00
trr
trr
trr
trr
0
10
20
30
40
50
0
25
50
75
100
125
150
IC(A)
R
goff(Ω)
25 °C
150 °C
With an inductive load at
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
25
V
V
A
Copyright Vincotech
13
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Inverter Switching Characteristics
figure 19.
FWD
figure 20.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
0
10
20
30
40
50
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
25
V
V
A
150 °C
figure 21.
FWD
figure 22.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
45
40
35
30
25
20
15
10
5
100
80
60
40
20
0
IRM
IRM
IRM
IRM
0
0
10
20
30
40
50
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
25
V
V
A
150 °C
Copyright Vincotech
14
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Inverter Switching Characteristics
figure 23.
FWD
figure 24.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
3000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
2500
2000
1500
1000
500
0
0
10
20
30
40
50
IC(A)
0
25
50
75
100
125
150
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
25
V
V
A
150 °C
figure 25.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
60
IC MAX
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
Copyright Vincotech
15
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Inverter Switching Definitions
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Inverter Switching Definitions
figure 30.
FWD
figure 31.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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V23990-P589-C418-PM
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
V23990-P589-C418-PM
V23990-P589-C418-/7/-PM
V23990-P589-C418-/3/-PM
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
not assembled
2
47,7
44,8
37,8
37,8
35
0
DC-
DC-
DC+
DC+
Inv+
Inv+
R1
3
0
4
0
5
2,8
6
0
7
35
2,8
8
28
0
9
25,2
22,4
19,6
16,8
14
0
R2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
N6
G6
S6
0
0
0
N4
G4
S4
11,2
8,4
0
0
5,6
0
N2
G2
S2
2,8
0
0
0
0
28,5
U
2,8
28,5
G1
S1
7,5
28,5
14,5
17,3
22
28,5
V
28,5
G3
S3
28,5
29
28,5
W
31,8
36,5
43,5
52,55
52,55
28,5
G5
S5
28,5
28,5
L1
25
L2
16,9
L3
not assembled
not assembled
Copyright Vincotech
18
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Pinout
DC+
4,5
INV+
6,7
T1
T3
T5
D1
D3
D5
G1
20
G3
23
G5
26
D9
D11
D13
S1
21
S3
24
S5
27
L1
28
U
19
V
L2
29
22
W
L3
30
25
D8
D10
D12
T2
T4
T6
D2
D4
D6
G2
17
G4
14
G6
11
S2
18
S4
15
S6
12
NTC
R1
8
R2
9
DC-
2,3
N2
16
N4
13
N6
10
Identification
Component
Voltage
Current
Function
Comment
ID
T2, T1, T4, T3, T6, T5
D1, D2, D3, D4, D5,
D6
IGBT
1200 V
25 A
Inverter Switch
FWD
1200 V
1600 V
25 A
35 A
Inverter Diode
D8, D9, D10, D11,
D12, D13
Rectifier
Rectifier Diode
Thermistor
NTC
Thermistor
Copyright Vincotech
19
22 Sep. 2021 / Revision 6
V23990-P589-C418-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Maximum ratings of Rectifier is updated
Clearance is updated
Rectifier and Inverter Switch characteristic values are
updated
The thermal characteristic of Inverter Switch is updated
The thermistor characteristics are updated
Separated datasheet
V23990-P589-C418-PM-D6-14
22 Sep. 2021
New datasheet format module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
22 Sep. 2021 / Revision 6
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