V23990-P640-G08Y-PM [VINCOTECH]
High inrush current capability;
| 型号： | V23990-P640-G08Y-PM |
| 厂家： | 
VINCOTECH |
| 描述： | High inrush current capability |
| 文件： | 总19页 (文件大小：2771K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P640-G08Y-PM
datasheet
flowCON 0
1600 V / 75 A
Features
flow 0 12 mm housing
● Three-phase input rectifier
● Brake chopper
Schematic
Target applications
● Industrial Drives
● Embedded Drives
● UPS
Types
● V23990-P640-G08Y-PM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1600
78
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
740
2740
88
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
150
Copyright Vincotech
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Brake Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
35
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
70
A
72
W
V
±20
150
Maximum junction temperature
°C
Brake Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
23
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
50
A
Tj = Tjmax
41
W
°C
Tjmax
Maximum junction temperature
150
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
1200
4
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
6
A
Tj = Tjmax
19
W
°C
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
8,93
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,18
1,15
1,23
Forward voltage
Reverse leakage current
Thermal
VF
IR
80
V
125
25
50
1600
150
µA
1500
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,79
K/W
Brake Switch
Static
VGE(th)
VCEsat
ICES
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0015 25
5
5,8
6,5
V
V
25
1,35
1,74
1,98
2,05
15
0
35
125
1200
0
25
25
250
600
µA
nA
Ω
IGES
rg
30
6
Cies
2530
132
115
Coes
Cres
f = 1 Mhz
0
25
25
pF
Output capacitance
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,97
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
87
84
20
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
22
Rgon = 32 Ω
Rgoff = 16 Ω
ns
521
615
50
142
3,49
4,47
2,68
4,32
Turn-off delay time
Fall time
0 / 15
700
35
Qr
Qr
= 2,8 μC
= 5 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
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V23990-P640-G08Y-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Diode
Static
25
1,79
1,80
Forward voltage
Reverse leakage current
Thermal
VF
IR
25
V
125
1200
25
27
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,72
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
37
45
301
420
2,75
5,03
1,04
2,06
2619
1765
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
di/dt = 2239 A/μs
di/dt = 2068 A/μs
0 / 15
700
35
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Brake Sw. Protection Diode
Static
25
1,66
1,59
Forward voltage
Reverse leakage current
Thermal
VF
IR
3
V
125
1200
25
250
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
3,72
K/W
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
0,79
Tj:
R th(j-s)
K/W
Diode thermal model values
R (K/W)
τ
(s)
3,05E-02
8,93E-02
2,82E-01
3,51E-01
3,93E-02
5,20E+00
9,97E-01
1,58E-01
5,43E-02
2,64E-03
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V23990-P640-G08Y-PM
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
tp
Tj
=
=
250
125
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
=
0,97
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,59E-02
1,61E-01
6,07E-01
7,79E-02
3,57E-02
2,73E-02
3,01E+00
3,99E-01
8,47E-02
1,42E-02
2,31E-03
4,08E-04
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
Ts
=
80
ºC
V
VGE
=
±15
Tjmax
Tj =
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8
17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
1,72
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,74E-02
1,85E-01
9,45E-01
2,69E-01
1,43E-01
1,19E-01
3,42E+00
4,11E-01
7,07E-02
1,95E-02
3,59E-03
4,63E-04
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9
17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-3
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
Tj:
R th(j-s)
3,72
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,58E-01
5,74E-01
1,74E+00
5,91E-01
6,54E-01
3,25E+00
1,68E-01
4,01E-02
8,37E-03
1,47E-03
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10
17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
700
0 / 15
32
V
V
700
0 / 15
35
V
VCE
VGE
=
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
V
A
R gon
R goff
Ω
Ω
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
700
0 / 15
32
V
V
Ω
700
0 / 15
35
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
R gon
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11
17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
0
700
0 / 15
32
°C
0
700
0 / 15
35
°C
Tj =
Tj =
VCE
=
=
=
=
V
V
VCE
=
=
=
V
V
A
VGE
R gon
R goff
VGE
I C
Ω
Ω
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
t
t
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
=
=
=
700
0 / 15
32
V
V
Ω
VCE
VGE
I C
=
=
=
700
0 / 15
35
V
V
A
125 °C
125 °C
VGE
R gon
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
700
0 / 15
32
V
V
Ω
700
0 / 15
35
V
VCE
VGE
=
=
=
VCE=
VGE =
I C=
125 °C
125 °C
V
A
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
700
0 / 15
32
V
700
0 / 15
35
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
V
R gon
Ω
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13
17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
i
t
dirr/dt
dirr
/
dt
i
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
700
0 / 15
32
V
700
0 / 15
35
V
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
V
V
A
R gon
Ω
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
32
16
Ω
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Switching Definitions
General conditions
=
=
=
125 °C
32 Ω
16 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
700
35
615
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
V
700
35
V
A
A
ns
84
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
700
35
V
VC (100%) =
I C (100%) =
700
35
V
A
A
142
ns
tr
=
22
ns
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Brake Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
700
35
V
I F (100%) =
Q r (100%) =
35
A
A
5,03
μC
45
A
420
ns
t rr
=
Copyright Vincotech
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with Press-fit pins
Ordering Code
V23990-P640-G08Y-PM
V23990-P640-G08Y-/3/-PM
VIN
VIN
Date code
WWYY
Name&Ver
NNNNNNNVV
Serial
UL
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
LLLLL
SSSS
Type&Ver
TTTTTTTVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
Pin table
Pin
X
Y
0
0
0
0
0
0
Function
BrE
33,5
30,7
26,4
23,9
21,4
18,9
1
2
3
4
5
6
7
8
BrG
DC-
DC-
DC-
DC-
Not assembled
Not assembled
Not assembled
9
10
11
12
13
14
15
0
0
0
0
DC+
2,5
5
7,5
22,5
22,5
DC+
DC+
DC+
L1
0
0
2,5
L1
16
17
18
19
20
21
22
5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
L1
L2
L2
L2
L3
L3
L3
12
14,5
17
24
26,5
29
23
24
25
33,5
33,5
33,5
17,1
14,6
7
BrC
BrC
Br+
Copyright Vincotech
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D1, D2, D3, D4, D5,
D6
Rectifier
1600 V
80 A
Rectifier Diode
T1
D7
D8
IGBT
FWD
FWD
1200 V
1200 V
1200 V
35 A
25 A
3 A
Brake Switch
Brake Diode
Brake Sw. Protection Diode
Copyright Vincotech
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17 Apr. 2019 / Revision 2
V23990-P640-G08Y-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-P640-G08Y-D2-14
17 Apr. 2019
Correction of Ic/If values
2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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17 Apr. 2019 / Revision 2
相关型号：
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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