V23990-P649-H-PM [VINCOTECH]
Optionally with brake chopper;
| 型号： | V23990-P649-H-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Optionally with brake chopper |
| 文件： | 总13页 (文件大小：1316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P649-G/H-PM
preliminary datasheet
flowCON 0
1200V / 50A
Features
flow0 housing
● Input rectifier
● Optionally with brake chopper
● Vincotech clip-in housing
Target Applications
Schematic
● Motor drives
● UPS
Types
● V23990-P649-G-PM with brake choper
● V23990-P649-H-PM without brake chopper
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
VRRM
IFAV
Tj=Tjmax
1600
50
V
A
A
Tj=Tjmax
DC current
Th=80°C
IFSM
600
1800
60
tp=10ms
Tj=45°C
Th=80°C
half sine wave
I2t-value
I2t
A2s
W
Ptot
Tj=Tjmax
Power dissipation per Diode
Tjmax
Maximum junction temperature
150
°C
Copyright by Vincotech
1
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Transistor BRC
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
25
V
A
Tj=Tjmax
Th=80°C
Th=80°C
Icpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings*
75
A
57
W
V
±20
tSC
Tj≤150°C
10
μs
V
VCC
VGE=15V
1200
Tjmax
Maximum junction temperature
150
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
BRC inverse diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
Tj=25°C
1200
6
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
6
A
18
W
°C
Tjmax
150
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
Tj=25°C
1200
15
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
30
33
A
W
°C
Tjmax
150
Thermal properties
Storage temperature
Operation temperature
Tstg
Top
-40...+125
-40...+110
°C
°C
Copyright by Vincotech
2
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Insulation properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2 s
Dc voltage
4000
V
min 12.7
min 12.7
mm
mm
Copyright by Vincotech
3
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Input Rectifier Bridge
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,14
1,09
0,90
0,77
5
1,5
VF
Vto
rt
Forward voltage
50
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse leakage current
V
mΩ
mA
K/W
K/W
7
0,02
3
Ir
1500
RthJH
RthJC
Thermal grease
thickness ≤50um λ=
0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,17
n.A.
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,001
25
V
V
1,3
1,63
1,84
15
0
0,25
650
1200
0
mA
nA
20
8
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
53
21
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=32Ohm
Rgoff=16Ohm
617
183
1,97
15
600
25
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
nF
Eoff
2,85
Cies
1,808
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
0,095
0,082
155
nF
Reverse transfer capacitance
Gate charge
nF
15
960
25
nC
K/W
K/W
Thermal grease
thickness ≤50um λ=
0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,24
n.A.
Copyright by Vincotech
4
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
BRC inverse diode
Diode forward voltage
Reverse leakage current
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,65
1,58
2,3
VF
Ir
3
V
250
1200
μA
Thermal grease
thickness ≤50um λ=
0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
RthJH
3,8
K/W
K/W
RthJC
n.A.
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,75
1,69
2,4
VF
Ir
Diode forward voltage
25
V
μA
250
Reverse leakage current
1200
600
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
44,2
196
ns
Rgon=32Ohm
Rgoff=16Ohm
Qrr
Reverse recovered charge
15
25
μC
3,44
2371
di(rec)max
/dt
Peak rate of fall of reverse recovery current
Reverse recovery energy
A/μs
mWs
K/W
K/W
Erec
RthJH
RthJC
1,34
2,11
Thermal grease
thickness ≤50um λ=
0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
n.A.
Copyright by Vincotech
5
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Brake
Figure 1
Brake IGBT
Figure 2
Typical output characteristics
Brake IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
75
75
60
45
30
15
60
45
30
15
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
Tj =
tp =
Tj =
250
25
μs
°C
250
125
μs
°C
VGE from 7 V to 17 V in steps of 1 V
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Brake IGBT
Figure 4
Brake FRED
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
40
32
24
16
8
30
25
20
15
10
5
25 o C
125 o C
125 o C
25 o C
0
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
3
At
At
tp =
tp =
250
10
μs
250
μs
VCE
=
V
Copyright by Vincotech
6
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Brake
Figure 5
Brake IGBT
Figure 6
Brake IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
5
5
4
3
2
1
0
Eon
Eoff
4
Eoff
Eon
3
2
1
0
Erec
Erec
R G ( Ω )
150
0
30
60
90
120
0
10
20
30
40
50
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
125
600
15
°C
V
125
600
15
°C
V
=
=
=
=
V
V
Rgon
Rgoff
=
=
IC =
32
Ω
Ω
24
A
16
Figure 7
Brake IGBT
Figure 8
Brake IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
10
10
tdoff
1
1
tdoff
tf
tf
tdon
0,1
0,1
tdon
tr
tr
0,01
0,01
0,001
0,001
0
30
60
90
120
R G ( Ω ) 150
0
10
20
30
40
50
IC (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
125
600
15
°C
V
125
600
15
°C
V
=
=
=
=
V
V
Rgon
Rgoff
=
=
IC =
32
Ω
Ω
24
A
16
Copyright by Vincotech
7
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Brake
Figure 9
Figure 10
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
With
With
D =
tp / T
1,24
D =
tp / T
2,11
RthJH
=
RthJH =
K/W
K/W
Copyright by Vincotech
8
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Brake
Figure 11
Brake IGBT
Figure 12
Collector current as a
Brake IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
function of heatsink temperature
IC = f(Th)
150
125
100
75
30
25
20
15
10
5
50
25
0
0
(
o C)
Th
(
o C)
0
50
100
150
200
Th
0
50
100
150
200
At
At
Tj =
Tj =
VGE
150
ºC
150
15
ºC
V
=
Figure 13
Power dissipation as a
Brake FRED
Figure 14
Forward current as a
Brake FRED
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
90
75
60
45
30
15
0
20
15
10
5
0
(
o C)
Th
(
o C)
0
50
100
150
200
Th
0
50
100
150
200
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
9
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Brake Inverse Diode
Figure 1
Brake inverse diode
Figure 2
Brake inverse diode
Typical diode forward current as
a function of forward voltage
IF = f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
14
12
10
8
25°C
125°C
D = 0,5
0,2
6
0,1
4
0,05
0,02
0,01
0,005
0.000
2
0
VF (V)
10-5
10-4
10-3
10-2
10-1
100
101
0
0,5
1
1,5
2
2,5
3
t p (s)
At
With
D =
tp =
250
μs
tp / T
3,80
RthJH
=
K/W
Figure 3
Power dissipation as a
Brake inverse diode
Figure 4
Forward current as a
Brake inverse diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
12
50
40
30
20
10
0
10
8
6
4
2
0
(
o C)
Th
(
o C)
0
50
100
150
200
Th
0
50
100
150
200
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
10
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Input Rectifier Bridge
Figure 1
Rectifier diode
Figure 2
Rectifier diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
150
120
90
60
30
0
125°C
25°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
VF (V)
10-5
10-4
10-3
10-2
10-1
100
101
0
0,4
0,8
1,2
1,6
2
t p (s)
At
With
D =
tp =
250
μs
tp / T
1,17
ű
RthJH
=
K/W
Figure 3
Power dissipation as a
Rectifier diode
Figure 4
Forward current as a
Rectifier diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
60
50
40
30
20
10
0
150
120
90
60
30
0
o C)
0
50
100
150
200
Th
(
o C)
Th
(
0
50
100
150
200
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
11
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
Package Outline and Pinout
Outline
Pinout
Copyright by Vincotech
12
Revision: 1
V23990-P649-G/H-PM
preliminary datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Product Status
Definition
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Target
Formative or In Design
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any
time without notice in order to improve design. The
data contained is exclusively intended for technically
trained staff.
Preliminary
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained
is exclusively intended for technically trained staff.
Final
Full Production
DISCLAIMER
Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design.
Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does
it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright by Vincotech
13
Revision: 1
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