V23990-P640-G20-PM [VINCOTECH]
High inrush current capability;型号: | V23990-P640-G20-PM |
厂家: | VINCOTECH |
描述: | High inrush current capability |
文件: | 总20页 (文件大小:6718K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V23990-P640-G20-PM
datasheet
flowCON 0
1600 V / 75 A
Topology features
flow 0 17 mm housing
● Three-phase Rectifier
● Brake Chopper
Component features
● High inrush current capability
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Schematic
Target applications
● Motor drives
● Servo drives
● UPS
Types
● V23990-P640-G20-PM
Copyright Vincotech
1
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Switch
VCES
Collector-emitter voltage
1200
51
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
121
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
29
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
50
A
Ptot
55
W
°C
Tjmax
Maximum junction temperature
175
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
18
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
44
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
69
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
600
1800
84
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
V
min 12,7
min 12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0017
50
25
5,3
5,8
6,3
V
25
1,58
1,88
2,26
2,07(1)
15
0
V
150
1200
0
25
25
1
µA
nA
Ω
20
120
4
Cies
Cres
Qg
2800
100
380
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,79
K/W
25
32
31,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
31,4
17,4
tr
125
150
25
20,4
20,8
Rgon = 8 Ω
Rgoff = 8 Ω
372
td(off)
Turn-off delay time
Fall time
125
150
25
458,8
481,6
69,36
109,53
121,46
1,34
ns
0/15
600
35
tf
125
150
25
ns
QrFWD=2,99 µC
QrFWD=5,05 µC
QrFWD=5,48 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,85
mWs
mWs
1,98
2,16
Eoff
125
150
3,38
3,71
Copyright Vincotech
4
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,35
1,85
1,81
2,05(1)
5,2
VF
IR
Forward voltage
25
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,73
K/W
25
56,24
63,1
IRRM
Peak recovery current
125
150
25
A
63,67
143,44
216,47
259,62
2,99
trr
Reverse recovery time
125
150
25
ns
di/dt=2725 A/µs
di/dt=2779 A/µs
di/dt=2565 A/µs
Qr
Recovered charge
0/15
600
35
125
150
25
5,05
μC
5,48
1,29
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,25
mWs
A/µs
2,44
3694
2204
2005
(dirf/dt)max
125
150
Copyright Vincotech
5
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Brake Sw. Protection Diode
Static
25
1,35
1,86
1,81
2,05(1)
2,7
VF
IR
Forward voltage
10
V
150
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,14
K/W
Rectifier Diode
Static
25
1,05
1,21(1)
1,1(1)
VF
IR
Forward voltage
33
V
125
0,987
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,84
K/W
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
6
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
2
4
6
8
10
0
2
4
6
8
10
VCE(V)
V
CE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,787
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,90E-02
3,13E-01
3,01E-01
4,49E-02
2,87E-02
1,04E+00
1,52E-01
5,53E-02
5,11E-03
6,58E-04
Copyright Vincotech
7
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
CE(V)
V
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
8
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,732
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,42E-02
2,01E-01
9,46E-01
2,52E-01
1,45E-01
1,23E-01
2,64E+00
3,47E-01
6,90E-02
1,59E-02
3,95E-03
5,74E-04
Copyright Vincotech
9
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
2,136
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,63E-02
1,98E-01
8,62E-01
4,41E-01
3,11E-01
2,49E-01
2,45E+00
2,73E-01
6,00E-02
1,39E-02
3,40E-03
6,61E-04
Copyright Vincotech
10
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Rectifier Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
50
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
0,835
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,53E-02
1,20E-01
4,61E-01
1,46E-01
3,83E-02
1,42E-02
9,71E+00
7,83E-01
1,28E-01
4,84E-02
4,40E-03
9,66E-04
Copyright Vincotech
11
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Switching Characteristics
figure 12.
IGBT
figure 13.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eon
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
8
V
125 °C
150 °C
600
0/15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Rgoff
Ω
Ω
8
figure 14.
FWD
figure 15.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
8
V
125 °C
150 °C
600
0/15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
12
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
tf
-1
10
tf
td(on)
tr
-1
10
td(on)
-2
10
tr
-3
10
-2
10
0
10
20
30
40
50
60
70
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
8
°C
150
600
0/15
35
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
8
figure 18.
FWD
figure 19.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
8
V
V
125 °C
150 °C
600
0/15
35
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
Copyright Vincotech
13
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Switching Characteristics
figure 20.
FWD
figure 21.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
8
V
125 °C
150 °C
600
0/15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 22.
FWD
figure 23.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
90
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
8
V
125 °C
150 °C
600
0/15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
14
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
6000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
70
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
8
V
V
Ω
125 °C
150 °C
600
0/15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 26.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
8
8
Ω
Ω
Copyright Vincotech
15
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Switching Definitions
figure 27.
IGBT
figure 28.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 29.
IGBT
figure 30.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
16
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Brake Switching Definitions
figure 31.
FWD
figure 32.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
17
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
V23990-P640-G20-PM
V23990-P640-G20-/7/-PM
V23990-P640-G20-/3/-PM
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
0
0
0
0
Function
BrE
33,5
30,7
26,4
23,9
21,4
18,9
2
BrG
3
DC-
4
DC-
5
DC-
6
DC-
7
not assembled
8
not assembled
9
not assembled
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0
0
DC+
DC+
DC+
DC+
L1
2,5
0
5
0
7,5
0
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,1
14,6
7
2,5
5
L1
L1
12
L2
14,5
17
L2
L2
24
L3
26,5
29
L3
L3
33,5
33,5
33,5
BrC
BrC
Br+
Copyright Vincotech
18
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Pinout
DC+
10,11,12,13
Br+
25
D1
D3
D5
D7
L1
14,15,16
L2
17,18,19
BrC
23,24
L3
T1
D8
20,21,22
2
1
BrG
BrE
D2
D4
D6
3,4,5,6
DC-
Identification
Component
Voltage
Current
Function
Comment
ID
T1
IGBT
FWD
FWD
1200 V
1200 V
1200 V
50 A
25 A
10 A
Brake Switch
Brake Diode
D7
D8
D2, D1, D4, D3, D6,
D5
Brake Sw. Protection Diode
Rectifier
1600 V
65 A
Rectifier Diode
Copyright Vincotech
19
05 May. 2022 / Revision 3
V23990-P640-G20-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-P640-G20-PM-D3-14
5 May. 2022
New Datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
05 May. 2022 / Revision 3
相关型号:
V23990-P689-F-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
V23990-P700-F40-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
V23990-P700-F44-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明